CN107834991A - A kind of quartz resonance sensitive chip - Google Patents
A kind of quartz resonance sensitive chip Download PDFInfo
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- CN107834991A CN107834991A CN201711046708.0A CN201711046708A CN107834991A CN 107834991 A CN107834991 A CN 107834991A CN 201711046708 A CN201711046708 A CN 201711046708A CN 107834991 A CN107834991 A CN 107834991A
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- 239000010453 quartz Substances 0.000 title claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 238000002955 isolation Methods 0.000 claims abstract description 58
- 230000000694 effects Effects 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 4
- 230000021715 photosynthesis, light harvesting Effects 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Gyroscopes (AREA)
Abstract
The invention discloses a kind of quartz resonance sensitive chip, including resonance sensing unit and fixed block, also include the first flexible bridges, isolation frame and the second flexible bridges, wherein, first sensing unit is arranged on isolation inframe, connected with isolating frame by the first flexible bridges, isolation frame is connected with two fixed blocks respectively by two the second flexible bridges.With prior art by optimizing the vibration nodal point position of sensing unit, the vibration nodal point position of sensed-mode is set to be in fixed block support structure position, so as to avoid vibrational energy from dissipating, the mode for improving frequency stability is compared, quartz resonance sensitive chip in the present invention was not present because the problem of fabrication error causes effect of optimization undesirable, and vibrational energy dissipation is small, frequency stability is high.
Description
Technical field
The present invention relates to resonator technologies field, more particularly to a kind of quartz resonance sensitive chip.
Background technology
In fields such as space flight, aviation, electronics, all kinds of microsensors, including angular-rate sensor, acceleration are widely applied
Spend sensor, pressure sensor and temperature sensor etc..Quartz crystal materials are due to steady with quality factor height, physical property
Calmly, time and temperature stability is good, has the characteristics that piezo-electric effect, is usually used in making the base material of all kinds sensor.It is based on
The various kinds of sensors that quartz crystal materials make, its resonance sensing unit is designed as greatly shake beam or tuning fork structure, and utilizes stone
The piezo-electric effect of English crystal, carry out resonant excitation and signal detection.Quartz resonance sensing unit is the core of microsensor
Part, the stability of its resonant condition directly affects the performance of sensor, and resonance stability is determined by frequency stability.
To improve the resonance stability of quartz resonance sensitive chip, generally the vibration nodal point position by optimizing sensing unit
Put, the vibration nodal point position of sensed-mode is in fixed block support structure position, so as to avoid vibrational energy from dissipating, improve frequency
Rate stability, while it also avoid influence of the extraneous vibration condition to sensing unit.But the vibration nodal point position of sensing unit
Optimization, because fabrication error can cause effect of optimization undesirable in actual fabrication.
The content of the invention
For deficiencies of the prior art, the technical problem to be solved in the present invention is：How quartz resonance is avoided
The vibrational energy of sensitive chip dissipates, and how to improve the frequency stability of quartz resonance sensitive chip.
In order to solve the above technical problems, present invention employs following technical scheme：
A kind of quartz resonance sensitive chip, including resonance sensing unit and fixed block, in addition to the first flexible bridges, isolation frame
And second flexible bridges, wherein：
First sensing unit is arranged on the isolation inframe, is connected with the frame of isolating by the first flexible bridges；
The isolation frame is connected with two fixed blocks respectively by two the second flexible bridges.
Preferably, the resonance sensing unit includes base portion and the first resonant column, wherein：
The one end of the first side of the base portion respectively with two first resonant columns is connected, two first resonance
The other end of post is towards same direction；
The second side of the base portion is connected by first flexible bridges with the frame of isolating, the first side and institute
It is two relative sides to state second side.
Preferably, the quartz resonance sensitive chip also includes tie-beam, and the resonance sensing unit includes base portion, first
Resonant column and the second resonant column, wherein：
The global shape of the base portion is the rectangular block with four sides and two end faces；
The one end of the first side of the base portion respectively with two first resonant columns is connected, two first resonance
The other end of post is towards same direction；
The one end of the second side of the base portion respectively with two second resonant columns is connected, two second resonance
For the other end of post towards same direction, the first side and the second side are two relative sides；
A tie-beam is respectively stretched out in two other side of the base portion, and the both sides of each tie-beam lead to respectively
Cross two first flexible bridges and isolate frame connection with described.
Preferably, the distance of two the first resonance intercolumniations and the distance of two the second resonance intercolumniations differ.
Preferably, the thickness of first flexible bridges is less than the resonance sensing unit, the isolation frame and the fixation
The thickness of any one in block.
Preferably, the thickness of first flexible bridges is the resonance sensing unit, the isolation frame and the fixed block
In the thickness of any one 30% to 80%.
Preferably, the thickness of second flexible bridges is less than the resonance sensing unit, the isolation frame and the fixation
The thickness of any one in block.
Preferably, the thickness of second flexible bridges is the resonance sensing unit, the isolation frame and the fixed block
In the thickness of any one 30% to 80%.
In summary, the invention discloses a kind of quartz resonance sensitive chip, including resonance sensing unit and fixed block, go back
Including the first flexible bridges, isolation frame and the second flexible bridges, wherein, first sensing unit is arranged on the isolation inframe, with
It is described isolation frame connect by the first flexible bridges, it is described isolate frame by two the second flexible bridges respectively with two fixed blocks
Connection.With prior art by optimizing the vibration nodal point position of sensing unit, the vibration nodal point position of sensed-mode is set to be in solid
Determine block support structure position, so as to avoid vibrational energy from dissipating, the mode for improving frequency stability is compared, the quartz in the present invention
Resonance sensitive chip is not present the problem of causing effect of optimization undesirable because of fabrication error, and small, the frequency of vibrational energy dissipation
Stability is high.
Brief description of the drawings
In order that the purpose, technical scheme and advantage of invention are clearer, the present invention is made into one below in conjunction with accompanying drawing
The detailed description of step, wherein：
Fig. 1 is the structural representation of quartz resonance sensitive chip embodiment 1 disclosed by the invention；
Fig. 2 is the structural representation of quartz resonance sensitive chip embodiment 2 disclosed by the invention；
Fig. 3 is the profile of quartz resonance sensitive chip embodiment 2 disclosed by the invention；
Fig. 4 is the structural representation of the comparison structure of quartz resonance sensitive chip embodiment 2 disclosed by the invention.
Reference and the corresponding relation of label in specification are：1- quartz resonance sensitive chips；The resonant columns of 2- first；
The resonant columns of 21- second, 3- base portions；4- tie-beams；The flexible bridges of 5- first；6- isolates frame；The flexible bridges of 7- second；8- fixed blocks.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1：
As shown in figure 1, the invention discloses a kind of quartz resonance sensitive chip 1, including resonance sensing unit and fixed block
8, in addition to the first flexible bridges 5, the isolation flexible bridges 7 of frame 6 and second, wherein：
First sensing unit is arranged in isolation frame 6, is connected with isolating frame 6 by the first flexible bridges 5；
Isolation frame 6 is connected with two fixed blocks 8 respectively by two the second flexible bridges 7.
Resonance sensing unit passes sequentially through the first flexible bridges 5 and connected with isolating the inner side of frame 6, forms first order buffer structure,
Isolation frame 6 is connected by the second flexible bridges 7 with fixed block 8, forms second level buffer structure.It that is to say, it is sensitive in quartz resonance
The integral type that 6-flexible bridges of resonance sensing unit-flexible bridges-isolation frame-fixed block 8 is constituted in chip 1 integrates single-chip
Composite construction, i.e., the level 2 buffering vibration isolation structure form of a flexible support is formd in sensitive chip.Can effectively it keep away
Exempt from the dissipation of resonance sensing unit vibrational energy, improve the frequency stability of sensing unit, while also decayed by fixed block 8
Influence of the external vibration, temperature factor of transmission to resonance sensing unit, improve the environmental suitability of resonance sensitive chip.
When it is implemented, resonance sensing unit includes the resonant column 2 of base portion 3 and first, wherein：
The one end of the first side of base portion 3 respectively with two the first resonant columns 2 is connected, two the first resonant columns 2 it is another
Hold towards same direction；
The second side of base portion 3 is connected by the first flexible bridges 5 with isolating frame 6, and first side and second side are relative
Two sides.
One end of first resonant column 2 is connected with the first side of base portion 3, and two the first resonant columns 2 can be set in parallel in
On one side, the structure of a tuning fork-like is formed with base portion 3.
When it is implemented, the thickness of the first flexible bridges 5 is any one less than in resonance sensing unit, isolation frame 6 and fixed block 8
Individual thickness.
The thickness ratio resonance sensing units of first flexible bridges 5, isolation frame 6 and fixed block 8 are thin, therefore the first flexible bridges 5 are firm
Spend small, so as to produce more preferable flexible buffer effect, reduce the dissipation of vibrational energy.
When it is implemented, the thickness of the first flexible bridges 5 is any one in resonance sensing unit, isolation frame 6 and fixed block 8
Thickness 30% to 80%.
Certain structural strength is also should ensure that while flexible buffer effect is produced, avoids wafer damage, therefore first
The thickness of flexible bridges 5 takes 30% to 80% being advisable for the thickness of any one in resonance sensing unit, isolation frame 6 and fixed block 8.
When it is implemented, the thickness of the second flexible bridges 7 is any one less than in resonance sensing unit, isolation frame 6 and fixed block 8
Individual thickness.
The thickness ratio resonance sensing units of second flexible bridges 7, isolation frame 6 and fixed block 8 are thin, therefore the second flexible bridges 7 are firm
Spend small, so as to produce more preferable flexible buffer effect, reduce the dissipation of vibrational energy.
When it is implemented, the thickness of the second flexible bridges 7 is any one in resonance sensing unit, isolation frame 6 and fixed block 8
Thickness 30% to 80%.
Certain structural strength is also should ensure that while flexible buffer effect is produced, avoids wafer damage, therefore second
The thickness of flexible bridges 7 takes 30% to 80% being advisable for the thickness of any one in resonance sensing unit, isolation frame 6 and fixed block 8.
Embodiment 2：
As shown in Fig. 2 the invention discloses a kind of quartz resonance sensitive chip 1, including resonance sensing unit and fixed block
8, in addition to the first flexible bridges 5, the isolation flexible bridges 7 of frame 6 and second, wherein：
First sensing unit is arranged in isolation frame 6, is connected with isolating frame 6 by the first flexible bridges 5；
Isolation frame 6 is connected with two fixed blocks 8 respectively by two the second flexible bridges 7.
Resonance sensing unit passes sequentially through the first flexible bridges 5 and connected with isolating the inner side of frame 6, forms first order buffer structure,
Isolation frame 6 is connected by the second flexible bridges 7 with fixed block 8, forms second level buffer structure.It that is to say, it is sensitive in quartz resonance
The integral type that 6-flexible bridges of resonance sensing unit-flexible bridges-isolation frame-fixed block 8 is constituted in chip 1 integrates single-chip
Composite construction, i.e., the level 2 buffering vibration isolation structure form of a flexible support is formd in sensitive chip.Can effectively it keep away
Exempt from the dissipation of resonance sensing unit vibrational energy, improve the frequency stability of sensing unit, while also decayed by fixed block 8
Influence of the external vibration, temperature factor of transmission to resonance sensing unit, improve the environmental suitability of resonance sensitive chip.
When it is implemented, quartz resonance sensitive chip 1 also includes tie-beam 4, resonance sensing unit includes base portion 3, first
The resonant column 21 of resonant column 2 and second, wherein：
The global shape of base portion 3 is the rectangular block with four sides and two end faces；
The one end of the first side of base portion 3 respectively with two the first resonant columns 2 is connected, two the first resonant columns 2 it is another
Hold towards same direction；
The one end of the second side of base portion 3 respectively with two the second resonant columns 21 is connected, two the second resonant columns 21 it is another
Towards same direction, first side and second side are two relative sides for one end；
A tie-beam 4 is respectively stretched out in the both sides of base portion 3, and the both sides of each tie-beam 4 pass through two the first flexible bridges 5 respectively
Connected with isolating frame 6.
First resonant column 2 and the second resonant column 21 are separately positioned on two relative sides of base portion 3, respectively with base portion 3
The structure of two tuning fork-likes is formed, and the first resonant column 2 is parallel with the second resonant column 21.
Resonance sensing unit is avoided the coupling under tuning fork difference vibration mode, improved using the structure of two tuning forks
The stability of frequency.And the physical dimension of two tuning forks can be flexibly designed, adjusts the frequency characteristic of resonance sensing unit.
And tie-beam 4 can be designed in its vibration nodal point position, then connected by the first flexible bridges 5 with isolating frame 6, preferably reduce and shake
The dissipation of energy.
When it is implemented, the distance between distance and two the second resonant columns 21 between two the first resonant columns 2 differs.
As shown in Fig. 2 the distance between two the first resonant columns 2 is can not phase with the distance between two the second resonant columns 21
With, the distance by changing resonance intercolumniation reaches more preferable frequency matching and constitutional balance.
When it is implemented, the thickness of the first flexible bridges 5 is any one less than in resonance sensing unit, isolation frame 6 and fixed block 8
Individual thickness.
The thickness ratio resonance sensing units of first flexible bridges 5, isolation frame 6 and fixed block 8 are thin, therefore the first flexible bridges 5 are firm
Spend small, so as to produce more preferable flexible buffer effect, reduce the dissipation of vibrational energy.
When it is implemented, the thickness of the first flexible bridges 5 is any one in resonance sensing unit, isolation frame 6 and fixed block 8
Thickness 30% to 80%.
Certain structural strength is also should ensure that while flexible buffer effect is produced, avoids wafer damage, therefore first
The thickness of flexible bridges 5 takes 30% to 80% being advisable for the thickness of any one in resonance sensing unit, isolation frame 6 and fixed block 8.
When it is implemented, the thickness of the second flexible bridges 7 is any one less than in resonance sensing unit, isolation frame 6 and fixed block 8
Individual thickness.
The thickness ratio resonance sensing units of second flexible bridges 7, isolation frame 6 and fixed block 8 are thin, therefore the second flexible bridges 7 are firm
Spend small, so as to produce more preferable flexible buffer effect, reduce the dissipation of vibrational energy.
When it is implemented, the thickness of the second flexible bridges 7 is any one in resonance sensing unit, isolation frame 6 and fixed block 8
Thickness 30% to 80%.
Certain structural strength is also should ensure that while flexible buffer effect is produced, avoids wafer damage, therefore second
The thickness of flexible bridges 7 takes 30% to 80% being advisable for the thickness of any one in resonance sensing unit, isolation frame 6 and fixed block 8.
As shown in figure 4, having manufactured a comparison structure using double tuning fork structures in embodiment 2, comparison structure is without this
Isolation frame 6, the first flexible bridges 5 and the second flexible bridges 7 in the resonance sensitive chip of disclosure of the invention, to humorous disclosed in the present embodiment
Sensitive chip and the comparison structure of shaking carry out emulation experiment, and the simulation analysis result in following table shows, the stone in the embodiment of the present invention 2
English resonance sensitive chip 1 is tied compared to contrast, and its frequency stability is improved more than an order of magnitude, and the present invention can be carried significantly
The resonance stability of high quartz resonance sensitive chip 1.
| Device architecture | Frequency stability |
| Comparison structure | 4.08% |
| The resonance sensitive chip structure of the embodiment of the present invention 2 | 0.055% |
In all embodiments of the invention, the level 2 buffering that the first flexible bridges 5, isolation frame 6, the second flexible bridges 7 are formed
Isolation structure meets vibration isolation efficiency rule.That is, the level 2 buffering isolation that the first flexible bridges 5, isolation frame 6, the second flexible bridges 7 are formed
Structure meets vibration isolation efficiency formulaThe rule of description, wherein,Z is frequency ratio, and ω is
Resonance sensing unit frequency, ωnFor vibrating isolation system frequency, η is vibration isolation efficiency, and ξ is system damping ratio coefficient, whenWhen, η
＜ 1, plays vibration isolating effect.
Resonance sensing unit, the first flexible bridges 5, isolation frame 6, the second flexible bridges 7 exist with the integral type Integrated design of fixed block 8
On single-chip, be advantageous to the miniaturization of device size and reduce element manufacturing difficulty.
Quartz resonance sensitive chip 1 disclosed by the invention, making base material are the quartz crystal with piezo-electric effect.
Finally illustrate, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although passing through ginseng
According to the preferred embodiments of the present invention, invention has been described, it should be appreciated by those of ordinary skill in the art that can
So that various changes are made to it in the form and details, the present invention that is limited without departing from appended claims
Spirit and scope.
Claims (8)
1. a kind of quartz resonance sensitive chip, including resonance sensing unit and fixed block, it is characterised in that also flexible including first
Bridge, isolation frame and the second flexible bridges, wherein：
First sensing unit is arranged on the isolation inframe, is connected with the frame of isolating by the first flexible bridges；
The isolation frame is connected with two fixed blocks respectively by two the second flexible bridges.
2. quartz resonance sensitive chip as claimed in claim 1, it is characterised in that the resonance sensing unit include base portion and
First resonant column, wherein：
The one end of the first side of the base portion respectively with two first resonant columns is connected, two first resonant columns
The other end is towards same direction；
The second side of the base portion is connected by first flexible bridges with the frame of isolating, the first side and described the
Two side faces are two relative sides.
3. quartz resonance sensitive chip as claimed in claim 1, it is characterised in that the quartz resonance sensitive chip also includes
Tie-beam, the resonance sensing unit include base portion, the first resonant column and the second resonant column, wherein：
The global shape of the base portion is the rectangular block with four sides and two end faces；
The one end of the first side of the base portion respectively with two first resonant columns is connected, two first resonant columns
The other end is towards same direction；
The one end of the second side of the base portion respectively with two second resonant columns is connected, two second resonant columns
For the other end towards same direction, the first side and the second side are two relative sides；
A tie-beam is respectively stretched out in two other side of the base portion, and the both sides of each tie-beam pass through two respectively
Individual first flexible bridges isolate frame connection with described.
4. the quartz resonance sensitive chip as described in claim any one of 1-3, it is characterised in that two first resonant columns
Between distance and the distance of two the second resonance intercolumniations differ.
5. the quartz resonance sensitive chip as described in claim any one of 1-3, it is characterised in that the thickness of first flexible bridges
Degree is less than the thickness of any one in the resonance sensing unit, the isolation frame and the fixed block.
6. the quartz resonance sensitive chip as described in claim any one of 1-3, it is characterised in that the thickness of first flexible bridges
Spend for 30% to 80% of the thickness of any one in the resonance sensing unit, the isolation frame and the fixed block.
7. the quartz resonance sensitive chip as described in claim any one of 1-3, it is characterised in that the thickness of second flexible bridges
Degree is less than the thickness of any one in the resonance sensing unit, the isolation frame and the fixed block.
8. the quartz resonance sensitive chip as described in claim any one of 1-3, it is characterised in that the thickness of second flexible bridges
Spend for 30% to 80% of the thickness of any one in the resonance sensing unit, the isolation frame and the fixed block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711046708.0A CN107834991A (en) | 2017-10-31 | 2017-10-31 | A kind of quartz resonance sensitive chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711046708.0A CN107834991A (en) | 2017-10-31 | 2017-10-31 | A kind of quartz resonance sensitive chip |
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| Publication Number | Publication Date |
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| CN107834991A true CN107834991A (en) | 2018-03-23 |
Family
ID=61650301
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|---|---|---|---|
| CN201711046708.0A Pending CN107834991A (en) | 2017-10-31 | 2017-10-31 | A kind of quartz resonance sensitive chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765404A (en) * | 2018-12-28 | 2019-05-17 | 西安交通大学 | Z-direction sensitivity quartz vibration beam accelerometer chip and processing technology and accelerometer based on QoS technique |
| CN112311352A (en) * | 2020-11-09 | 2021-02-02 | 中国电子科技集团公司第二十六研究所 | Multi-degree-of-freedom buffering quartz chip |
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| JPS5552621A (en) * | 1978-10-11 | 1980-04-17 | Matsushima Kogyo Co Ltd | Vertical vibration-type piezo-vibrator |
| JPS5941914A (en) * | 1982-09-01 | 1984-03-08 | Seiko Instr & Electronics Ltd | Gt cut quartz oscillator |
| JPS63260310A (en) * | 1987-04-17 | 1988-10-27 | Seiko Electronic Components Ltd | Longitudinal crystal vibrator |
| CN101666646A (en) * | 2009-10-16 | 2010-03-10 | 中国人民解放军国防科学技术大学 | Inclined double-end tuning-fork type silica micromechanical gyroscope and making method thereof |
| US20140062262A1 (en) * | 2009-06-04 | 2014-03-06 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
| CN105424021A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第二十六研究所 | Chip of angular velocity sensor of double-ended tuning fork |
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| WO2017064916A1 (en) * | 2015-10-13 | 2017-04-20 | 株式会社村田製作所 | Resonator and resonant device |
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2017
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|---|---|---|---|---|
| JPS5552621A (en) * | 1978-10-11 | 1980-04-17 | Matsushima Kogyo Co Ltd | Vertical vibration-type piezo-vibrator |
| JPS5941914A (en) * | 1982-09-01 | 1984-03-08 | Seiko Instr & Electronics Ltd | Gt cut quartz oscillator |
| JPS63260310A (en) * | 1987-04-17 | 1988-10-27 | Seiko Electronic Components Ltd | Longitudinal crystal vibrator |
| US20140062262A1 (en) * | 2009-06-04 | 2014-03-06 | Sand 9, Inc. | Methods and apparatus for temperature control of devices and mechanical resonating structures |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765404A (en) * | 2018-12-28 | 2019-05-17 | 西安交通大学 | Z-direction sensitivity quartz vibration beam accelerometer chip and processing technology and accelerometer based on QoS technique |
| CN112311352A (en) * | 2020-11-09 | 2021-02-02 | 中国电子科技集团公司第二十六研究所 | Multi-degree-of-freedom buffering quartz chip |
| CN112311352B (en) * | 2020-11-09 | 2024-05-03 | 中国电子科技集团公司第二十六研究所 | Multi-degree-of-freedom buffer quartz chip |
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