CN107611066B - Chamber for heat treatment apparatus and heat treatment apparatus - Google Patents

Chamber for heat treatment apparatus and heat treatment apparatus Download PDF

Info

Publication number
CN107611066B
CN107611066B CN201710846916.2A CN201710846916A CN107611066B CN 107611066 B CN107611066 B CN 107611066B CN 201710846916 A CN201710846916 A CN 201710846916A CN 107611066 B CN107611066 B CN 107611066B
Authority
CN
China
Prior art keywords
chamber
members
flat plate
heat treatment
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710846916.2A
Other languages
Chinese (zh)
Other versions
CN107611066A (en
Inventor
笠次克尚
西村圭介
浦崎义彦
森川清彦
中西裕也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JTEKT Thermo Systems Corp
Original Assignee
Koyo Thermo Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koyo Thermo Systems Co Ltd filed Critical Koyo Thermo Systems Co Ltd
Publication of CN107611066A publication Critical patent/CN107611066A/en
Application granted granted Critical
Publication of CN107611066B publication Critical patent/CN107611066B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Tunnel Furnaces (AREA)

Abstract

The invention provides a chamber for a heat treatment apparatus and a heat treatment apparatus, wherein the chamber for the heat treatment apparatus can further reduce the labor and time for manufacturing even if the chamber is large-sized. A chamber (4) of a heat treatment device (1) comprises: a cylindrical side wall (12) for surrounding the object to be treated; and an end wall (13) that closes one opening (12b) of the side walls (12). The chamber (4) is formed by mechanically coupling a plurality of members (a side wall (12), an end wall (13), a columnar connecting member (14), and a beam-shaped connecting member (15)) containing silicon oxide as a main component.

Description

Chamber for heat treatment apparatus and heat treatment apparatus
The present application is a divisional application of an invention patent application having an application number of 201410356050.3, an application date of 2014, 7/24, and an invention name of "chamber for heat treatment apparatus and heat treatment apparatus".
Technical Field
The present invention relates to a chamber of a heat treatment apparatus for treating an object to be treated in a heated atmosphere, and a heat treatment apparatus.
Background
A heat treatment apparatus for performing a heat treatment on a treatment substrate such as a glass substrate is known (for example, see patent document 1). As an example of the heat treatment apparatus, a heat treatment apparatus described in patent document 1 includes a heat treatment container. The heat treatment vessel is a quartz tube.
Prior art documents
Patent document 1: japanese patent laid-open No. 2010-177653 (paragraph 0017)
In recent years, the size of quartz tubes has tended to increase with the increase in the size of substrates to be processed. Among them, it is difficult to replace the quartz tube with a metal tube for reasons of strength and the like. Therefore, a larger-sized quartz tube is sought. However, it is difficult to manufacture a large quartz tube. Specifically, the above-described quartz tube is a single member. Therefore, for example, when a quartz tube is manufactured, such an operation occurs: the side walls and end walls of the quartz tube are fabricated separately and then these large side walls and end walls are welded together. Such welding operations are labor and time consuming.
Disclosure of Invention
In view of the above circumstances, an object of the present invention is to further reduce the labor and time required for manufacturing a chamber for a heat treatment apparatus even if the chamber is large.
(1) In order to solve the above problem, a chamber for a heat treatment apparatus according to an aspect of the present invention includes: a cylindrical side wall for surrounding an object to be treated; and an end wall that closes one opening of the side wall, wherein the chamber is formed by mechanically coupling a plurality of members mainly composed of silicon oxide.
The term "mechanically coupled" as used herein means that a plurality of members are coupled to each other while maintaining a state of being (separable from) a single member.
According to this structure, the chamber is formed of a member containing silicon oxide as a main component. This makes it possible to provide a chamber having excellent strength and heat resistance and sufficiently withstanding use in a high-temperature environment. The chamber is formed by mechanically coupling a plurality of members. According to this configuration, the labor and time required for welding a plurality of members can be reduced as much as possible when the chamber is manufactured. Therefore, the labor and time required for manufacturing the chamber can be further reduced without being limited by the size of the chamber. As described above, according to the present invention, even if the chamber for the heat treatment apparatus is large, the labor and time required for manufacturing can be further reduced.
(2) Preferably, the material of the plurality of members includes at least one of glass, quartz, and ceramic.
With this structure, a chamber having excellent strength and heat resistance can be relatively easily realized.
(3) Preferably, the plurality of members includes a plurality of flat plate-like members arranged to form a cylindrical shape as a whole, and a plurality of 1 st coupling members coupling the adjacent flat plate-like members to each other.
According to this configuration, the cylindrical side wall can be realized by combining a plurality of flat plate-like members. The plurality of plate-like members can be conveyed in a stacked state, for example. Therefore, the work of conveying the flat plate-like member, that is, the work of conveying the side wall can be easily performed. Further, by combining flat plate-like members having a planar shape, a three-dimensional side wall can be formed. This can further reduce the labor and time required for manufacturing the side wall.
(4) More preferably, the plurality of members include a beam-shaped 2 nd coupling member, and the 2 nd coupling member is bridged over the plurality of flat plate-like members so as to couple the plurality of flat plate-like members to each other.
According to this structure, the plurality of plate-like members are coupled to each other by the beam member. This prevents the flat plate-like member of the side wall from falling down.
(5) Preferably, the end wall is formed in a flat plate shape and is placed on one end of the side wall.
According to this configuration, the structure in which the one end of the side wall is covered with the end wall can be realized by a simple operation of placing the flat plate-like end wall on the one end of the side wall.
(6) In order to solve the above problem, a heat treatment apparatus according to an aspect of the present invention includes: a chamber for the above heat treatment apparatus; and an air pressure adjusting mechanism for making the air pressure of the space in the cavity higher than the air pressure of the space outside the cavity.
According to this structure, the chamber is formed of a member containing silicon oxide as a main component. This makes it possible to provide a chamber having excellent strength and heat resistance and sufficiently withstanding use in a high-temperature environment. The chamber is formed by mechanically coupling a plurality of members. According to this configuration, the labor and time required for welding a plurality of members can be reduced as much as possible when the chamber is manufactured. Therefore, the labor and time required for manufacturing the chamber can be further reduced without being limited by the size of the chamber. As described above, according to the present invention, even if the chamber for the heat treatment apparatus is large, the labor and time required for manufacturing can be further reduced. The air pressure adjusting mechanism operates so that the air pressure in the space inside the chamber is higher than the air pressure in the space outside the chamber. This can suppress the entry of foreign matter (particles) present outside the chamber into the space inside the chamber. Therefore, even if a gap is formed between the side wall and the end wall of the assembled chamber, it is possible to suppress the intrusion of foreign matter outside the chamber into the space inside the chamber. Therefore, the foreign matter can be prevented from adhering to the object to be treated. Thus, according to the heat treatment measure of the present invention, similarly to the case where the chamber is formed as a single member, it is possible to suppress the occurrence of defects in the object to be treated due to the adhesion of foreign matter to the object to be treated.
Effects of the invention
According to the present invention, even if the chamber for the heat treatment apparatus is large, the labor and time required for manufacturing can be further reduced.
Drawings
Fig. 1 is a sectional view of a heat treatment apparatus according to an embodiment of the present invention.
Fig. 2 is a perspective view of a chamber of the heat treatment apparatus.
Fig. 3 is an exploded perspective view of the chamber.
Fig. 4 is a sectional view of the chamber, and shows a state in which the chamber is viewed from above.
Fig. 5 is an enlarged view of a main portion of fig. 3.
Fig. 6 is a sectional view of a main part of a modification.
Description of the reference symbols
1: a heat treatment device;
4: a chamber;
9: a gas supply device (gas pressure adjustment mechanism);
12: a sidewall (multiple components);
13: end wall(s);
14: 1 st connecting member(s);
15: a 2 nd connecting member (a plurality of members);
16: a flat plate-like member;
100: an object to be treated.
Detailed Description
The following describes a mode for carrying out the present invention with reference to the drawings. The present invention can be widely applied to a heat treatment apparatus for heat-treating an object to be treated.
Fig. 1 is a cross-sectional view of a heat treatment apparatus 1 according to an embodiment of the present invention, and shows a state in which the heat treatment apparatus 1 is viewed from a side. Fig. 2 is a perspective view of the chamber 4 of the heat treatment apparatus 1. Fig. 3 is an exploded perspective view of the chamber 4. Fig. 4 is a sectional view of the chamber 4, and shows a state in which the chamber 4 is viewed from above.
Referring to fig. 1, a heat treatment apparatus 1 is configured to be capable of performing heat treatment on a surface of a treatment object 100. More specifically, the heat treatment apparatus 1 is configured to heat treat the surface of the object 100 by supplying a heated gas to the object 100.
The object 100 to be processed is, for example, a glass substrate, a semiconductor substrate, or the like, and is formed in a rectangular flat plate shape in the present embodiment.
The heat treatment apparatus 1 includes: a substrate 2, a heater 3, a chamber 4, sealing members 5 and 6, a support body (boat)7, a lift mechanism 8, and a gas supply device 9.
The substrate 2 is provided as a member supporting the heater 3 and the chamber 4. A through hole is formed in the center of the substrate 2. The heater 3 is disposed so as to cover the through hole from above.
The heater 3 is, for example, an electric heater, and in the present embodiment, is configured to be able to heat the gas to about 600 ℃. The heater 3 is formed in a box shape as a whole, and has an opening 3a opened downward. The opening 3a of the heater 3 is supported by the substrate 2. A chamber 4 is disposed in a space surrounded by the heater 3.
The chamber 4 is configured as a processing chamber for performing a heat treatment on the object 100 to be processed. The chamber 4 is formed in a box shape as a whole and has an opening 4a opened downward. The opening 4a of the chamber 4 is in contact with the sealing member 5, and is supported by the substrate 2 via the sealing member 5. The sealing member 5 is a heat-resistant annular member that hermetically seals the space between the opening 4a of the chamber 4 and the upper surface of the substrate 2. The space 4b in the chamber 4 is continuous to the space below the substrate 2 through the through hole of the substrate 2. The detailed structure of the chamber 4 will be described later. When the heat processing apparatus 1 performs a heat processing operation, the object 100 to be processed is disposed in the space 4b in the chamber 4. The object 100 to be treated is supported on the support 7 in a vertically standing state, for example.
The support 7 is provided to dispose the object 100 to be processed in the chamber 4. The support body 7 is formed in a disk shape, for example, and has a base at the center. The lower ends of the plurality of objects to be processed 100 are fixed to the pedestal. The objects 100 to be processed are supported on the pedestal in a state of being arranged in parallel to each other. A sealing member 6 is disposed on the upper surface of the outer peripheral portion of the support body 7. The sealing member 6 is a heat-resistant annular member that hermetically seals a space between the upper surface of the outer peripheral portion of the support body 7 and the lower surface of the substrate 2. The support body 7 is supported by the elevating mechanism 8 and is vertically displaceable together with the object 100 by the operation of the elevating mechanism 8. A gas supply device 9 is attached to the support body 7.
The gas supply device 9 is configured to supply a gas for heat treatment to the inside of the chamber 4. The gas supply device 9 is an example of the "gas pressure adjusting device" of the present invention. The gas supply device 9 has a gas pipe 10 and a pump 11. The gas pipe 10 penetrates the support body 7, and one end of the gas pipe 10 opens into the space 4b in the chamber 4. The pump 11 supplies gas from a gas tank, not shown, to the space 4b in the chamber 4 through the gas pipe 10. Thereby, the space 4b inside the chamber 4 is slightly pressurized (slightly pressurized). Thereby, the air pressure in the space 4b inside the chamber 4 is higher than the air pressure outside the chamber 4.
As an operation when the heat treatment apparatus 1 performs heat treatment, first, the object 100 to be treated is placed in the space 4b in the chamber 4 while being supported by the support body 7. Next, the gas supply device 9 supplies gas into the space 4b and performs a heating operation of the heater 3. Thereby, the space 4b in the chamber 4 is heated, and the object 100 is thermally treated.
Next, the detailed structure of the chamber 4 will be described. Referring to FIGS. 1-4, chamber 4 will be formed of silicon oxide (SiO)2) A plurality of parts which are main components are mechanically combined.
Specifically, the chamber 4 has: side wall 12, end wall 13, 1 st connecting member 14 and 2 nd connecting member 15.
In the present embodiment, each member (the side wall 12, the end wall 13, the 1 st connecting member 14, and the 2 nd connecting member 15) of the chamber 4 is made of a quartz material. The material of each member of the chamber 4 is not limited to quartz, and may be glass or ceramic. Thus, the chamber 4 may comprise at least one of glass, quartz, and ceramic, for example.
The side wall 12 is provided to surround the object 100, and is formed in a cylindrical shape as a whole. In the present embodiment, the side wall 12 is formed in a polygonal shape (octagonal shape) as a whole. The side wall 12 is formed to have a size capable of accommodating a plurality of objects to be processed 100.
The side wall 12 has a plurality of (8 in the present embodiment) flat plate-like members 16(16a to 16 h). When the plurality of plate-like members 16a to 16h are collectively referred to, they are simply referred to as the plate-like member 16.
Each flat plate member 16 is formed in a rectangular flat plate shape. The thickness of each flat plate-like member 16 is, for example, about several mm. The flat plate-like members 16 can be conveyed in a state of being overlapped with each other. The edge of each flat plate member 16 is formed by shaping by machining. The flat plate-like members 16 are arranged so as to be formed in a cylindrical shape as a whole. Specifically, the adjacent 2 flat plate-like members 16 are arranged in a state of being inclined to each other in a plan view. The adjacent 2 flat plate members 16 are connected to each other by the 1 st connecting member 14.
Fig. 5 is an enlarged view of a main portion of fig. 3. Referring to fig. 3 to 5, in the present embodiment, the number of the 1 st coupling members 14 is the same as the number of the flat plate-like members 16. The 1 st coupling member 14 is disposed between the adjacent 2 flat plate members 16.
Each of the 1 st coupling members 14 is a columnar member extending in a vertically elongated manner, and is formed in a quadrangular prism shape in the present embodiment. Each 1 st connecting member 14 has a pair of grooves 14a, 14 b.
The grooves 14a and 14b are provided as portions for connecting adjacent 2 flat plate-like members 16. The grooves 14a and 14b are formed on a pair of side surfaces of the 1 st connecting member 14 and extend from the upper end to the lower end of the 1 st connecting member 14. The grooves 14a and 14b are formed in directions inclined to each other in a plan view. The grooves 14a, 14b are fitted to one edge of the corresponding flat plate member 16. Thereby, the adjacent 2 flat plate members 16 are connected via the 1 st connecting member 14. A convex portion 14c is formed on the upper surface of each 1 st coupling member 14. The convex portion 14c is provided as a protrusion that fits into a through hole, described later, of the end wall 13. According to the above configuration, the plurality of flat plate members 16 are sequentially connected in the circumferential direction of the side wall 12 by the columnar 1 st connecting member 14, and form a closed side surface in a polygonal shape (cylindrical shape).
The 2 nd coupling member 15 is a beam-like member that couples the 2 flat plate-like members 16a and 16e, and is provided so as to be suspended on the flat plate-like members 16a and 16 e.
In the present embodiment, 2 nd coupling members 15 are provided. Each of the 2 nd coupling members 15 couples 2 flat plate-like members 16a and 16e arranged in parallel with each other.
Each of the 2 nd connecting members 15 has a beam portion 15a and a pair of end portions 15b and 15 c.
The beam portion 15a is formed in an elongated rod shape, and in the present embodiment, is formed in a quadrangular prism shape. The beam portion 15a is disposed between the upper end portions of 2 flat plate-like members 16a, 16e arranged in parallel with each other. The beam portion 15a has a pair of end portions 15b and 15 c.
The pair of end portions 15b and 15c are provided as portions to be coupled to the corresponding flat plate-like members 16a and 16 e. The pair of end portions 15b and 15c are each formed in a block shape. The pair of end portions 15b and 15c are coupled to the upper end portions of the corresponding flat plate members 16a and 16e, respectively.
Specifically, the flat plate member 16a has grooves 18a, 18a at its upper end, and the flat plate member 16e has grooves 18b, 18b at its upper end. The grooves 18a, 18a are formed to correspond to the one end portions 15b, 15b of the 2 nd connecting member 15. The grooves 18a and 18a are, for example, rectangular grooves in side view. The one end portions 15b, 15b are fitted into the grooves 18a, 18 a. A recess 15d is formed in the lower surface of one of the end portions 15b, 15 b. The recessed portion 15d is supported by the bottom of the corresponding groove portion 18a, 18 a. The mechanical coupling between the other end portion 15c of each 2 nd connecting member 15 and the corresponding groove portion 18b of the flat plate-like member 16e is also the same as described above, and therefore, the description thereof is omitted.
According to the above configuration, the height of the upper surface of the 1 st coupling member 14, the height of the upper surface of the 2 nd coupling member 15, and the height of the upper end of the flat plate-like members 16(16a to 16h) are flush with each other. For example, 2 convex portions 15e are formed on the upper surfaces of the pair of end portions 15b and 15c of each 2 nd coupling member 15. The convex portion 15e is provided as a protrusion to be fitted into a through hole, which will be described later, of the end wall 13.
Referring to fig. 2, 3 and 5, the end wall 13 is provided as a portion closing the opening 12a of the upper portion of the side wall 12. The end wall 13 is formed in a flat plate shape as a whole and is placed on the upper end of the side wall 12. The shape of the end wall 13 corresponds to the shape of the side wall 12 in plan view. Specifically, in the present embodiment, the end wall 13 is formed in an octagonal shape. In the present embodiment, the thickness of the end wall 13 is set to be the same as the thickness of the side wall 12.
The end wall 13 has a plurality of (3 in the present embodiment) flat plate-like members 19(19a to 19 c). When the flat plate members 19a to 19c are collectively referred to, they are simply referred to as the flat plate member 19.
The flat plate-like member 19b is formed in a rectangular flat plate shape. The flat plate- like members 19a, 19c are formed in a substantially trapezoidal shape. These flat plate-like members 19 are arranged in the order of the flat plate- like members 19a, 19b, 19c, whereby the octagonal-shaped end wall 13 is formed as a whole. The flat plate-like members 19a to 19c can be conveyed in a state of being overlapped with each other. The edge portions of the flat plate-like members 19a to 19c are shaped by machining.
The flat plate member 19 of the end wall 13 is formed with a through hole to be fitted with the convex portion 14c of the 1 st connecting member 14 and a through hole to be fitted with the convex portion 15e of the 2 nd connecting member 15. The corresponding convex portions 14c and 15e are fitted into the through holes of the flat plate-like member 19 of the end wall 13. The flat plate-like member 19 of the end wall 13 is supported by the flat plate-like members 16 of the side walls 12, the 1 st coupling member 14, and the 2 nd coupling member 15.
Thereby, the end wall 13 is mechanically coupled to the 1 st coupling member 14, the 2 nd coupling member 15, and the flat plate member 16 of the side wall 12. According to the above configuration, the space surrounded by the side wall 12 and the end wall 13 becomes the space 4b in the chamber 4.
No sealing mechanism is particularly provided between the respective members (the side wall 12, the end wall 13, the 1 st coupling member 14, the 2 nd coupling member 15) of the chamber 4. Therefore, it is considered that particles and the like floating in the space outside the chamber 4 may enter between the flat plate-like member 16 and the 1 st connecting member 14, or between the flat plate-like member 1 and the end wall 13, for example. However, the gas pressure in the space 4b inside the chamber 4 is set higher than the gas pressure outside the chamber 4 by the gas supply device 9 shown in fig. 1. Thus, even if no seal structure is provided between the members of the chamber 4, intrusion of particles into the space 4b in the chamber 4 can be suppressed.
The chamber 4 having the above-described structure is in a disassembled state during transportation. When the chamber 4 is conveyed, the flat plate members 16 of the side walls 12 and the flat plate members 19 of the end walls 13 are conveyed in a state of being overlapped, for example. When the worker assembles the chamber 4, the worker first couples the adjacent 2 flat plate members 16 to each other using the 1 st coupling member 14. Thereby, the side wall 12 is completed. Next, the operator bridges the 2 nd connecting member 15 between the 2 flat plate-like members 16a, 16e of the side wall 12 that are parallel to each other. This prevents the flat plate members 16 of the side walls 12 from falling down. Next, the operator sets the end wall 13 at the upper end of the side wall 12. The end wall 13 is supported by the 1 st coupling member 14, the 2 nd coupling member 15, and the flat plate member 16, and thus is restrained from flexing. Thereby, the chamber 4 is completed.
As described above, according to the heat treatment apparatus 1 of the present embodiment, the chamber 4 is formed by the members (the side walls 12, the end walls 13, the 1 st coupling member 14, and the 2 nd coupling member 15) containing silicon oxide as a main component. This makes the chamber 4 excellent in strength and heat resistance and capable of sufficiently withstanding use in a high-temperature environment. The chamber 4 is formed by mechanically coupling a plurality of members (the side wall 12, the end wall 13, the 1 st coupling member 14, and the 2 nd coupling member 15). According to this configuration, the labor and time required to weld a plurality of members can be reduced as much as possible when manufacturing the chamber 4. Therefore, the labor and time required for manufacturing the chamber 4 can be further reduced without being restricted by the size of the chamber 4. As described above, even if the chamber 4 of the heat processing apparatus 1 is large, the labor and time required for manufacturing can be further reduced.
Here, a description will be given of a conventional large-sized quartz chamber in which a plurality of members are integrated by welding or the like, and according to such a chamber, a tool or the like is likely to come into contact with quartz at the time of manufacture, and the quartz chamber is likely to be damaged. Further, the conventional large-sized chamber cannot be disassembled during transportation, and thus needs to be carefully handled so that damage due to contact or the like does not occur, which makes handling difficult. Also, the manufacturing cost of the large chamber increases.
In contrast, according to the chamber 4 of the present embodiment, the respective members (the side wall 12, the end wall 13, the 1 st coupling member 14, and the 2 nd coupling member 15) of the chamber 4 are formed separately when the chamber 4 is manufactured. Therefore, the possibility of contact of tools and the like during the production of the chamber 4 can be reduced, and as a result, the chamber 4 is less likely to be damaged. In addition, the respective members can be conveyed separately when the chamber 4 is conveyed. This makes it possible to easily prevent the respective members from being damaged by contact with a tool or the like when the chamber 4 is conveyed. This facilitates the processing of the chamber 4. Further, it is not necessary to integrate the above-described respective components of the chamber 4 by welding or the like, and the manufacturing cost of the chamber 4 can be further reduced.
In the heat processing apparatus 1, the material of the chamber 4 includes at least one of glass, quartz, and ceramic (quartz in the present embodiment). With this structure, a chamber having excellent strength and heat resistance can be relatively easily realized.
Further, according to the heat treatment apparatus 1, the cylindrical side wall 12 can be realized by combining the plurality of flat plate-like members 16(16a to 16 h). The flat plate members 16a to 16h can be conveyed in a stacked state, for example. Therefore, the work of conveying the flat plate-like member 16, that is, the work of conveying the side wall 12 can be easily performed. By combining the flat plate-like members 16 having a planar shape, the side wall 12 having a three-dimensional shape can be formed. This can further reduce the labor and time required for manufacturing the side wall 12.
Further, according to the heat treatment apparatus 1, the plurality of flat plate-like members 16a and 16e are coupled to each other by the beam-like 2 nd coupling member 15. This can prevent the flat plate-like member 16 of the side wall 12 from falling down.
Further, according to the heat treatment apparatus 1, the end wall 13 is formed in a flat plate shape and is placed on the upper end of the side wall 12. According to this configuration, the structure in which the upper end of the side wall 12 is covered with the end wall 13 can be realized by a simple operation of placing the flat plate-like end wall 13 on the upper end of the side wall 12.
Further, according to the heat treatment apparatus 1, the gas supply device 9 operates so that the gas pressure in the space 4b inside the chamber 4 becomes higher than the gas pressure in the space outside the chamber 4. This can suppress the entry of foreign matter (particles) present outside the chamber 4 into the space 4b inside the chamber 4. Therefore, even if a gap is formed between the side wall 12 and the end wall 13 of the assembled chamber, it is possible to suppress the intrusion of foreign matter outside the chamber 4 into the space inside the chamber 4. Therefore, the foreign matter can be prevented from adhering to the object 100. Thus, as in the case where the chamber 4 is formed as a single member, it is possible to suppress occurrence of a defect in the object 100 to be processed, which is caused by adhesion of foreign matter to the object 100.
The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments. The present invention can be variously modified within the scope of the claims.
(1) In the above embodiment, the description has been given taking as an example a mode in which the gas in the space 4b inside the chamber 4 is pressurized by the gas supply device 9 disposed below the chamber 4. However, this may not be the case. For example, an inert gas such as nitrogen may be introduced between the columnar 1 st connecting member 14 and the flat plate member 16 of the side wall 12. The present invention can be applied to a low oxygen concentration process if the inert gas is introduced into the space 4b in the chamber 4.
(2) In the above-described embodiment, the side wall 12 has been described as having an octagonal shape in a plan view. However, this may not be the case. For example, the side wall 12 may have a quadrangular shape in plan view. In this case, as shown in fig. 6, the grooves 14a and 14b of the 1 st connecting member 14 are formed to be perpendicular to each other in a plan view. In this case, 4 flat plate-like members 16 are used, and the end wall 13 is formed in a rectangular shape.
The present invention is widely applicable to a chamber for a heat treatment apparatus for treating a target object in a heated atmosphere, and a heat treatment apparatus.

Claims (6)

1. A chamber for a thermal processing apparatus, characterized in that,
the chamber for the heat treatment apparatus includes:
a cylindrical side wall for surrounding an object to be treated; and
an end wall that closes one opening of the side walls,
the chamber is formed by mechanically combining a plurality of parts mainly composed of silicon oxide,
the plurality of members include a plurality of side wall flat plate-like members for forming the side walls, a plurality of end wall flat plate-like members for forming the end walls, and a beam-like coupling member,
the end wall has a structure in which a plurality of flat plate-like members for the end wall are arranged in order, and is formed in a flat plate shape as a whole,
a plurality of the side walls are arranged in such a manner as to constitute a cylindrical shape as a whole with a plate-like member,
the beam-like connecting member is erected on the plurality of side wall flat plate-like members so as to connect 2 side wall flat plate-like members arranged in parallel to each other among the plurality of side wall flat plate-like members,
each of the end wall flat plate members is placed on the beam-like connecting member.
2. The chamber for a thermal processing apparatus according to claim 1,
the chamber is disposed in a space surrounded by the heater.
3. The chamber for a thermal processing apparatus according to claim 1,
the plurality of members includes a plurality of columnar coupling members,
the columnar connecting member is configured to connect the adjacent side walls to each other by a flat plate-like member,
the columnar connecting member has a pair of groove portions,
the pair of grooves are fitted to one edge of the side wall flat plate-like member.
4. The chamber for a thermal processing apparatus according to claim 1,
the end wall is carried at one end of the side wall.
5. The chamber for a thermal processing apparatus according to claim 1,
the plurality of components are made of at least one of glass, quartz and ceramic.
6. A heat treatment apparatus is characterized in that,
the heat treatment apparatus includes:
a chamber for the heat treatment apparatus described in any one of claim 1 to claim 5; and
and an air pressure adjusting mechanism for making the air pressure of the space inside the cavity higher than the air pressure of the space outside the cavity.
CN201710846916.2A 2013-07-26 2014-07-24 Chamber for heat treatment apparatus and heat treatment apparatus Active CN107611066B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013155916A JP2015025623A (en) 2013-07-26 2013-07-26 Chamber for thermal treatment equipment, and thermal treatment equipment
JPJP2013-155916 2013-07-26
CN201410356050.3A CN104347454B (en) 2013-07-26 2014-07-24 The chamber and annealing device of annealing device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201410356050.3A Division CN104347454B (en) 2013-07-26 2014-07-24 The chamber and annealing device of annealing device

Publications (2)

Publication Number Publication Date
CN107611066A CN107611066A (en) 2018-01-19
CN107611066B true CN107611066B (en) 2021-05-07

Family

ID=52488932

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710846916.2A Active CN107611066B (en) 2013-07-26 2014-07-24 Chamber for heat treatment apparatus and heat treatment apparatus
CN201410356050.3A Active CN104347454B (en) 2013-07-26 2014-07-24 The chamber and annealing device of annealing device

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201410356050.3A Active CN104347454B (en) 2013-07-26 2014-07-24 The chamber and annealing device of annealing device

Country Status (4)

Country Link
JP (1) JP2015025623A (en)
KR (2) KR101612614B1 (en)
CN (2) CN107611066B (en)
TW (3) TWI644071B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018089412A1 (en) 2016-11-08 2018-05-17 O.I. Corporation Catalyst guard
JP6960845B2 (en) * 2017-12-21 2021-11-05 株式会社Cfcデザイン Muffle structure for cylindrical furnaces made of carbon / carbon composite material
TWM581661U (en) * 2019-03-07 2019-08-01 群翌能源股份有限公司 Combined protection barrel for high-temperature manufacturing process protected by inert atmosphere protection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559631A (en) * 1984-09-14 1985-12-17 Abar Ipsen Industries Heat treating furnace with graphite heating elements
US4897140A (en) * 1986-05-19 1990-01-30 Peter Opsvik Method for making a pipe-shaped body of wood
US20070169701A1 (en) * 2006-01-21 2007-07-26 Integrated Materials, Inc. Tubular or Other Member Formed of Staves Bonded at Keyway Interlocks
US20100009489A1 (en) * 2008-07-08 2010-01-14 Chan Albert Tu Method and system for producing a solar cell using atmospheric pressure plasma chemical vapor deposition
CN202393209U (en) * 2011-08-24 2012-08-22 徐玉继 Special assembled furnace kiln device for cover-type round large workpiece
CN103125012A (en) * 2010-09-27 2013-05-29 东丽工程株式会社 Substrate treatment system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184387A (en) * 1988-01-20 1989-07-24 Kureha Chem Ind Co Ltd Muffle for use in high-temperature electric furnace
JPH01289254A (en) * 1988-05-17 1989-11-21 Tel Sagami Ltd Heat treatment apparatus
US6021155A (en) * 1998-02-23 2000-02-01 Jones; William R. Heat treating furnace having improved hot zone
JP2000000147A (en) * 1998-06-17 2000-01-07 Takeguchi Shinichi Glass structure and its structural material
JP4060112B2 (en) * 2001-04-10 2008-03-12 アイセル株式会社 Thin panel
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
JP4384518B2 (en) 2004-02-18 2009-12-16 光洋サーモシステム株式会社 Furnace structure of heat treatment equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4559631A (en) * 1984-09-14 1985-12-17 Abar Ipsen Industries Heat treating furnace with graphite heating elements
US4897140A (en) * 1986-05-19 1990-01-30 Peter Opsvik Method for making a pipe-shaped body of wood
US20070169701A1 (en) * 2006-01-21 2007-07-26 Integrated Materials, Inc. Tubular or Other Member Formed of Staves Bonded at Keyway Interlocks
US20100009489A1 (en) * 2008-07-08 2010-01-14 Chan Albert Tu Method and system for producing a solar cell using atmospheric pressure plasma chemical vapor deposition
CN103125012A (en) * 2010-09-27 2013-05-29 东丽工程株式会社 Substrate treatment system
CN202393209U (en) * 2011-08-24 2012-08-22 徐玉继 Special assembled furnace kiln device for cover-type round large workpiece

Also Published As

Publication number Publication date
TW201809570A (en) 2018-03-16
KR101612614B1 (en) 2016-04-14
KR20150013027A (en) 2015-02-04
KR101562768B1 (en) 2015-10-22
TW201802423A (en) 2018-01-16
TWI644072B (en) 2018-12-11
KR20150101442A (en) 2015-09-03
TW201516366A (en) 2015-05-01
JP2015025623A (en) 2015-02-05
CN104347454A (en) 2015-02-11
CN107611066A (en) 2018-01-19
CN104347454B (en) 2017-10-13
TWI616633B (en) 2018-03-01
TWI644071B (en) 2018-12-11

Similar Documents

Publication Publication Date Title
US9978632B2 (en) Direct lift process apparatus
US6716027B2 (en) Semiconductor wafer boat having stackable independently replaceable boat parts and vertical heat-treating apparatus comprising the same
JP5027667B2 (en) Vacuum processing chamber for ultra-large area substrates
CN101325169B (en) Carrying bench and plasma treatment apparatus using the same
KR102120521B1 (en) Wafer boat support table and heat treatment apparatus using the same
CN107611066B (en) Chamber for heat treatment apparatus and heat treatment apparatus
KR102168255B1 (en) Apparatus and methods for handling workpieces of different sizes
TWI668791B (en) Substrate processing apparatus and substrate processing method using the same
CN102956431B (en) Ring shielding parts, its constituent part and substrate-placing platform
TWI407821B (en) A substrate mounting mechanism and a substrate processing device
JP2016219464A (en) Vacuum processing apparatus and transfer robot
JP6387167B2 (en) Chamber for heat treatment apparatus and heat treatment apparatus
JP6524536B2 (en) Plasma processing apparatus and plasma processing method
CN109722620B (en) Heat treatment equipment
KR20180086142A (en) Decompression container, processing apparatus, processing system, and method of producing flat panel display
JP4914270B2 (en) Heat treatment container
JP4629545B2 (en) Vacuum processing equipment
KR101361711B1 (en) Supporting unit for supporting a processing chamber and apparatus for processing a substrate including the same
JP2005235936A (en) Throat structure of heat treatment apparatus
JP4416521B2 (en) Heat treatment equipment
KR101622850B1 (en) Plate slow-cooling method
KR102024170B1 (en) A method of manufacturing a clamp structure to be applied to a robot for manufacturing a semiconductor wafer and a clamp structure to be applied to a robot for manufacturing a semiconductor wafer fabrication facility manufactured by a clamp structure applied to the robot for the semiconductor wafer fabrication facility
KR102192206B1 (en) Film-forming mask and film-forming device
US9530675B2 (en) Wafer handling station including cassette members with lateral wafer confining brackets and associated methods
JP2007005430A (en) Heat treatment apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant