CN106925496A - Microelectromechanical ultrasound is popped one's head in and circuit - Google Patents
Microelectromechanical ultrasound is popped one's head in and circuit Download PDFInfo
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- CN106925496A CN106925496A CN201710009206.4A CN201710009206A CN106925496A CN 106925496 A CN106925496 A CN 106925496A CN 201710009206 A CN201710009206 A CN 201710009206A CN 106925496 A CN106925496 A CN 106925496A
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- circuit
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- oxide layer
- separation layer
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/70—Specific application
- B06B2201/76—Medical, dental
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
The invention discloses a kind of microelectromechanical ultrasound probe, including silicon substrate（1）, the silicon substrate（1）Upper surface be oxide layer（2）, the oxide layer（2）Upper surface offer some cavitys（3）, some cavitys（3）In a row, row arrangement, the oxide layer（2）Upper surface bonding vibration film（4）, the vibration film（4）Upper surface set separation layer（5）, around separation layer（5）Edge and its inside offer the isolation channel of sinking（6）, the isolation channel（6）Through separation layer（5）And vibration film（4）Afterwards, its bottom land is opened in oxide layer（2）On；The separation layer（5）Upper surface on just to each cavity（3）Center position be provided with Top electrode（7）.The present invention is reasonable in design, and the structure of ultrasonic novelty, small volume, bandwidth, sensitivity are high, and noise is low, good stability.
Description
Technical field
It is particularly a kind of new micro electronmechanical the present invention relates to MEMS sensor field, specifically micro-electromechanical ultrasonic sensor
Structure of ultrasonic and circuit.
Background technology
Ultrasonic imaging technique is more in medical diagnosis, therapeutic treatment, Non-Destructive Testing, ultrasonic microscope and mrine geomorphy detection etc.
It is widely used in individual field.Ultrasonic transducer can launch ultrasonic wave and detection ultrasonic wave, realize it is sound-electric conversion and
Electro-acoustic is changed, and is the core component of ultrasonic imaging diagnostic device.The development of ultrasonic transducer is to improving medical ultrasound diagnosis technology
Development with equipment plays decisive role.With the expansion in ultrasound transducer application field, conventional piezoelectric formula surpasses in ultrasonic probe
The weak point of sonic transducer is also gradually exposed.Wherein main problem is piezoelectric and working media such as sky
Acoustic impedance mismatch between gas and water and tissue etc..In addition, conventional piezoelectric transducers cannot Integrated manufacture, therefore line
The manufacture craft difficulty of property array is big.Over nearly 20 years, MEMS micro-processing technology has obtained significant progress, using this Technology design
A kind of new microelectromechanical ultrasound transducer, both had the broadband of capacitive transducer and the advantage of electromechanical conversion efficiency high concurrently,
MEMS micro-processing technology is taken full advantage of to be easy to make microdevice, be adapted to manufacture array, mass production and silicon materials and Jie
The good advantage of matter impedance matching.
The content of the invention
The invention aims to solve above-mentioned problems of the prior art, and provide a kind of new micro electronmechanical
Structure of ultrasonic and circuit, make this kind of ultrasonic probe be successfully applied in medical imaging.
The present invention is achieved by the following technical solutions：
A kind of microelectromechanical ultrasound probe, including silicon substrate, the upper surface of the silicon substrate is oxide layer, the upper table of the oxide layer
Face offers some cavitys, and the upper surface bonding vibration film of the oxide layer, the upper surface of the vibration film sets separation layer,
The isolation channel of sinking is offered around the edge and its inside of separation layer, the isolation channel is thin through separation layer and vibration
After film, its bottom land is opened in oxide layer；Center position on the upper surface of the separation layer just to each cavity is provided with
Electrode.
Some cavitys in the oxide layer form an array element after being located in same area of isolation；The separation layer it is upper
The edge position that surface is located in an array element is provided with a pad, between the two adjacent Top electrodes often arranged in an array element
And connected by metal lead wire between two adjacent Top electrodes of each column, a Top electrode of the pad and its nearest neighbours it
Between by metal lead wire connect.
Phosphorus is injected at the silicon substrate back side, and row metal of going forward side by side sputters to form bottom electrode.
N number of array element is arranged in a row and is formed N array element linear array ultrasonic probes.
During work, DC voltage is applied on the upper/lower electrode of face battle array probe, electrostatic force will be produced between two-plate,
Vibration film is pulled to substrate in the presence of electrostatic force, now applies and vibration film working frequency identical on upper/lower electrode
Alternating voltage, can so be such that film constantly vibrates, and realize the function of transmitting ultrasonic wave.When being applied with certain DC offset voltage
When effect has extraneous acoustic pressure on vibration film, vacuum cavity distance changes, and capacitance variations, external circuit can cause capacitance variations
Electric current be converted to measurable voltage signal, realize the reception of ultrasonic wave.
The preparation method of above-mentioned microelectromechanical ultrasound probe, comprises the following steps：
（1）, selection silicon chip and SOI wafer, and carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some cavitys；
（4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（6）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（7）, in the upper surface splash-proofing sputtering metal of separation layer, and with peel off method formed Top electrode and pad；
（8）, etch isolation channel around the edge and inside of separation layer, form array element array, and with TMAH solution corruption
Lose isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, each Top electrode and pad connected by metal lead wire；
（10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms bottom electrode.
Above-mentioned microelectromechanical ultrasound transducer can make up the deficiency of piezoelectric ultrasonic transducer, at the same at present be applied to medical science into
The ultrasonic probe of picture, it is necessary to have corresponding circuit to be matched with ultrasonic transducer, allows ultrasonic probe to realize the work(of internal loopback
Can, realize medical ultrasound imaging.
Therefore, a kind of circuit of microelectromechanical ultrasound probe, including radiating circuit, on-off circuit and signal conditioning circuit.
The radiating circuit is collectively formed by high-voltage pulse amplifying circuit and DC offset voltage, while acting on ultrasonic spy
Head makes its transmitting ultrasonic wave.
Signal conditioning circuit is included across resistance amplification detection circuit, filter circuit, low-noise amplification circuit；Across resistance amplification detection electricity
Road is the beginning of signal conditioning circuit in ultrasonic probe, and weak capacitive signal is converted to and can survey electric signal by it, due to conversion
Electrical signal amplitude is faint, and circuit is in itself and outside has noise, it will make the noise when resolution ratio reduction of output signal,
Noise reduction process is amplified to output signal using filter circuit and low-noise amplification circuit, system signal noise ratio and resolution ratio is improved.
Increase on-off circuit and transmitting, receiving circuit between popping one's head in.
Microelectromechanical ultrasound probe is required for applying DC offset voltage under transmitting and reception state, by DC offset voltage
Put on probe by protective resistance.Now, when probe is in emission state, circuit breaker in middle will point to radiating circuit,
That is FPGA controller and high-voltage pulse generator part, FPGA controller control high-voltage pulse generator produce high-voltage pulse simultaneously to make
For popping one's head in, probe is set to launch ultrasonic wave；When probe is in reception state, circuit breaker in middle will point to receiving circuit, i.e.,
Across resistance amplification detection circuit and filter circuit part, the Weak current produced under ul-trasonic irradiation of being popped one's head under reception state passes through
Measurable voltage echo-signal is converted to across resistance amplification detection circuit, voltage echo-signal is then improved by filter circuit again
Signal to noise ratio, reaches the effect for filtering noise.
The ultrasonic probe that the present invention is prepared using new microelectromechanical ultrasound transducer, the probe both has capacitive transducer concurrently
The advantage of broadband and electromechanical conversion efficiency high, also takes full advantage of MEMS micro-processing technology and is easy to make microdevice, is adapted to
The advantage that manufacture array, mass production and silicon materials and Medium impedence are matched, while also making probe realize certainly using circuit
From the function of receiving, there is certain application prospect in ultrasonic imaging field.
The present invention is reasonable in design, and the structure of ultrasonic novelty, small volume, bandwidth, sensitivity are high, and noise is low, stabilization
Property is good.
Brief description of the drawings
Fig. 1 represents transducer N of the present invention（64-1024）The schematic diagram of linear array.
Fig. 2 represents part A in Fig. 1（Also it is an array element）Structural representation.
Fig. 3 represents part B in Fig. 2（Also it is a cell）Sectional view.
Fig. 4 is the schematic diagram of circuit of the present invention.
Fig. 3-1 represents step 2 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-2 represents step 3 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-3 represents step 4 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-4 represents step 5 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-5 represents step 6 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-6 represents step 7 in transducer preparation method of the present invention）Schematic diagram.
Fig. 3-7 represents step 8 in transducer preparation method of the present invention）Schematic diagram.
In figure：1- silicon substrates, 2- oxide layers, 3- cavitys, 4- vibration films, 5- separation layers, 6- isolation channels, 7- Top electrodes,
8- pads, 9- metal lead wires.
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with the accompanying drawings.
A kind of microelectromechanical ultrasound probe, as shown in figure 1, by N（64~1024）Individual array element is arranged in a row and is formed N array elements
Linear array ultrasonic probe.
As shown in figure 3, represent the sectional view of single cell in each array element, including silicon substrate 1, the silicon substrate 1 it is upper
Surface is oxide layer 2, and the upper surface of the oxide layer 2 offers some regular hexagon cavitys 3, as shown in Fig. 2 some positive six sides
Shape cavity 3 is in a row, row arrangement or diagonally arranged, the upper surface bonding vibration film 4 of the oxide layer 2, the vibration film 4
Upper surface sets separation layer 5, and the isolation channel 6 of sinking is offered around the edge and its inside of separation layer 5（Isolation channel is used for
Separate each array element）, after separation layer 5 and vibration film 4, its bottom land is opened in oxide layer 2 isolation channel 6；It is described every
Center position on the upper surface of absciss layer 5 just to each cavity 3 is provided with Top electrode 7（Form graphical Top electrode）.The oxygen
Change after some cavitys 3 on layer 2 are located in same area of isolation and form an array element；The upper surface of the separation layer 5 is located at one
Edge position in individual array element is provided with a pad 8, between the two adjacent Top electrodes 7 often arranged in an array element and each column
Two adjacent Top electrodes 7 between connected by metal lead wire 9, between the pad 8 and a Top electrode 7 of its nearest neighbours lead to
Cross metal lead wire 9 to connect, form an array element.
The preparation method of above-mentioned microelectromechanical ultrasound probe, comprises the following steps：
（1）, selection silicon chip and SOI wafer, and carry out standard RCA clean, remove various organic matters, golden dust and natural oxidizing layer
It is 0.01 ~ 0.08 Ω .cm Deng, resistivity；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer, as shown in figure 3-1；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some regular hexagon cavitys, as shown in figure 3-2；
（4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding, as shown in Fig. 3-3；
（5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film, as shown in Figure 3-4；
（6）, deposit on vibration film using LPCVD techniques layer of silicon dioxide layer as separation layer, as in Figure 3-5；
（7）, in the upper surface splash-proofing sputtering metal of separation layer, and with peel off method formed Top electrode and pad, as seen in figures 3-6；
（8）, etch isolation channel around the edge and inside of separation layer, form array element array, and with TMAH solution corruption
Lose isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel, as shown in fig. 3 to 7；
（9）, each Top electrode and pad connected by metal lead wire；
（10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms electricity under integration
Pole（It is not drawn into figure）.
A kind of new microelectromechanical ultrasound probe circuit, as shown in figure 4, including radiating circuit, switch（Isolation）Circuit and letter
Number modulate circuit.
Radiating circuit is collectively formed by high-voltage pulse amplifying circuit and DC offset voltage, while act on ultrasonic probe making
Its transmitting ultrasonic wave.
Signal conditioning circuit is included across resistance amplification detection circuit, filter circuit, low-noise amplification circuit.Across resistance amplification detection electricity
Road is the beginning of signal conditioning circuit in ultrasonic probe, and weak capacitive signal is converted to and can survey electric signal by it, due to conversion
Electrical signal amplitude is faint, and circuit is in itself and outside has noise, it will make the noise when resolution ratio reduction of output signal,
So being amplified noise reduction process to output signal using filter circuit and low-noise amplification circuit, system signal noise ratio and resolution are improved
Rate.
Transmitting is considered simultaneously, shared same probe is received, and the high-voltage pulse signal being loaded into during transmitting on probe will be passed
It is defeated to signal conditioning circuit, maximum input voltage of the high-voltage pulse amplitude considerably beyond the detection chip in amplification detection circuit is hindered
Amplitude, can burn detection chip.Therefore, increase on-off circuit and transmitting, receiving circuit between popping one's head in, by high-voltage pulse signal
Ultrasonic probe emission state is acted only on, without influence ultrasonic probe reception state.
In a word, microelectromechanical ultrasound of the present invention probe, solve in conventional piezoelectric formula ultrasonic probe piezoelectric with
Acoustic impedance mismatch problem between such as empty gas and water of working media and tissue.In addition, conventional piezoelectric formula is also solved
PZT (piezoelectric transducer) in ultrasonic probe as core component cannot Integrated manufacture, the big problem of making linear array probe technology difficulty.
The present invention includes single microvibration unit（cell）Structure design, and by structure design be hexagon, the work of this structure
Frequency is 3MHz ~ 12MHz, it is adaptable to high-frequency detection；Hexagon cell is arranged as an array element by row, row, and arrangement is more
Closely, repeat unit increases under limited area, improves transducer sensitivity.N（64~1024）Individual array element is arranged in a row shape
Into linear array probe；Corresponding transmission circuit is designed to linear array, and linear array is connected with circuit, realize the detection work(of ultrasonic probe
Energy.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
It has been described in detail according to the embodiment of the present invention, it will be understood by those within the art that, to technical scheme
Modify or equivalent, without departure from the spirit and scope of technical scheme, it all should cover claim
In protection domain.
Claims (5)
1. a kind of microelectromechanical ultrasound is popped one's head in, it is characterised in that：Including silicon substrate（1）, the silicon substrate（1）Upper surface for oxidation
Layer（2）, the oxide layer（2）Upper surface offer some cavitys（3）, the oxide layer（2）Upper surface bonding vibration it is thin
Film（4）, the vibration film（4）Upper surface set separation layer（5）, around separation layer（5）Edge and its inside open
It is provided with the isolation channel of sinking（6）, the isolation channel（6）Through separation layer（5）And vibration film（4）Afterwards, its bottom land is opened in oxygen
Change layer（2）On；The separation layer（5）Upper surface on just to each cavity（3）Center position be provided with Top electrode（7）；
The oxide layer（2）On some cavitys（3）An array element is formed after in same area of isolation；The separation layer
（5）Upper surface be located at an array element in edge position be provided with a pad（8）, two often arranged in array element are adjacent
Top electrode（7）Between and each column two adjacent Top electrodes（7）Between pass through metal lead wire（9）Connection, the pad（8）With
One Top electrode of its nearest neighbours（7）Between pass through metal lead wire（9）Connection；
N number of array element is arranged in a row and is formed N array element linear array ultrasonic probes.
2. microelectromechanical ultrasound according to claim 1 is popped one's head in, it is characterised in that：N values are 64 ~ 1024.
3. microelectromechanical ultrasound according to claim 1 and 2 is popped one's head in, it is characterised in that：The cavity（3）It is shaped as positive six side
Shape or circle.
4. the circuit that a kind of microelectromechanical ultrasound is popped one's head in, it is characterised in that：Including radiating circuit, on-off circuit and signal condition electricity
Road；
The radiating circuit is collectively formed by high-voltage pulse amplifying circuit and DC offset voltage, while act on ultrasonic probe making
Its transmitting ultrasonic wave；
Signal conditioning circuit is included across resistance amplification detection circuit, filter circuit, low-noise amplification circuit；It is across resistance amplification detection circuit
At the beginning of signal conditioning circuit in ultrasonic probe, weak capacitive signal is converted to and can survey electric signal by it, due to the telecommunications changed
Number amplitude is faint, and circuit is in itself and outside has noise, it will makes the noise when resolution ratio reduction of output signal, utilizes
Filter circuit and low-noise amplification circuit are amplified noise reduction process to output signal, improve system signal noise ratio and resolution ratio；
Increase on-off circuit and transmitting, receiving circuit between popping one's head in.
5. the preparation method that a kind of microelectromechanical ultrasound is popped one's head in, it is characterised in that：Comprise the following steps：
（1）, selection silicon chip and SOI wafer, and carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some cavitys；
（4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（6）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（7）, in the upper surface splash-proofing sputtering metal of separation layer, and with peel off method formed Top electrode and pad；
（8）, etch isolation channel around the edge and inside of separation layer, form array element array, and with TMAH solution corruption
Lose isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, each Top electrode and pad connected by metal lead wire；
（10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms bottom electrode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710009206.4A CN106925496A (en) | 2017-01-06 | 2017-01-06 | Microelectromechanical ultrasound is popped one's head in and circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710009206.4A CN106925496A (en) | 2017-01-06 | 2017-01-06 | Microelectromechanical ultrasound is popped one's head in and circuit |
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| CN106925496A true CN106925496A (en) | 2017-07-07 |
Family
ID=59444746
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Cited By (5)
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| CN109244232A (en) * | 2018-09-13 | 2019-01-18 | 徐景辉 | MEMS PZT (piezoelectric transducer) and production method |
| CN110057921A (en) * | 2019-04-11 | 2019-07-26 | 成都华芯微医疗科技有限公司 | A kind of three-dimension ultrasonic imaging system |
| CN110570836A (en) * | 2019-09-24 | 2019-12-13 | 中北大学 | Ultrasonic transducer and preparation method thereof |
| CN110732476A (en) * | 2019-09-29 | 2020-01-31 | 杭州电子科技大学 | Multi-band MEMS ultrasonic transducer array based on square grid layout |
| CN112353420A (en) * | 2020-10-20 | 2021-02-12 | 中北大学 | Mammary gland three-dimensional ultrasonic CT imaging system based on high-density CMUT (CMUT) cylindrical-area array |
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| CN110570836B (en) * | 2019-09-24 | 2021-11-19 | 中北大学 | Ultrasonic transducer and preparation method thereof |
| CN110732476A (en) * | 2019-09-29 | 2020-01-31 | 杭州电子科技大学 | Multi-band MEMS ultrasonic transducer array based on square grid layout |
| CN112353420A (en) * | 2020-10-20 | 2021-02-12 | 中北大学 | Mammary gland three-dimensional ultrasonic CT imaging system based on high-density CMUT (CMUT) cylindrical-area array |
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