CN106865483A - Medical micro- electric capacity ultrasonic transducer face battle array probe and preparation method thereof - Google Patents
Medical micro- electric capacity ultrasonic transducer face battle array probe and preparation method thereof Download PDFInfo
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- CN106865483A CN106865483A CN201710009234.6A CN201710009234A CN106865483A CN 106865483 A CN106865483 A CN 106865483A CN 201710009234 A CN201710009234 A CN 201710009234A CN 106865483 A CN106865483 A CN 106865483A
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- oxide layer
- separation layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/52—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S15/00
- G01S7/521—Constructional features
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention discloses the medical micro- electric capacity ultrasonic transducer face battle array probe of one kind, including silicon substrate（1）, the silicon substrate（1）Upper surface be oxide layer（2）, the oxide layer（2）Upper surface offer some cavitys（3）, some cavitys（3）In a row, row arrangement, the oxide layer（2）Upper surface bonding vibration film（4）, the vibration film（4）Upper surface set separation layer（5）, around separation layer（5）Edge and its inside offer the isolation channel of sinking（6）, the isolation channel（6）Through separation layer（5）And vibration film（4）Afterwards, its bottom land is opened in oxide layer（2）On；The separation layer（5）Upper surface on just to each cavity（3）Center position be provided with Top electrode（7）.The present invention is reasonable in design, and medical micro- electric capacity ultrasonic transducer face battle array probe has that structure is novel, lightweight, small volume, has the advantages that controllability is high, sensitivity is big, stray capacitance is small.
Description
Technical field
It is particularly a kind of for curing the present invention relates to MEMS sensor field, specifically micro Process electric capacity ultrasonic transducer
Study micro Process electric capacity ultrasonic transducer face battle array of picture and preparation method thereof.
Background technology
With MEMS（Micro electromechanical system, MEMS）It is quick with nanometer technique
Development, MEMS sonacs（Micro-electromechanical systems ultrasonic transducer, letter
Claim MUT）Application also more and more extensively, it be it is a kind of employ micromachining technology making novel sensor, compare
In traditional sonac, MEMS sonacs have low cost, low-power consumption, broadband, high sensitivity, facilitate with it is follow-up
The advantage such as circuit is integrated and portable, has broad application prospects.MUT mainly includes piezo ultrasound transducers
（Piezoelectric MUT）, pressure resistance type sonac（Piezoresistive MUT）And capacitive ultrasonic sensor
（Capacitive MUT）Deng.Wherein, pressure resistance type sonac manufacture craft is relatively good with CMOS compatibility, and subsequent conditioning circuit
Simply, and can be integrated on same chip, but because its working frequency is not high, in high frequency field using less.Piezoelectric type surpasses
Sonic transducer applies relatively broad in ultrasound field, but due to the not coupling phenomenon between common piezoelectric and air
It is very serious, so the efficiency of piezo ultrasound transducers is not high.And capacitive ultrasonic sensor（CMUT）As a result of table
Face micro fabrication, therefore there is simple structure, differentiate in the absence of those shortcomings of piezoelectric transducer, and capacitance type sensor
Rate is high, reliable operation, dynamic response are fast, can non-cpntact measurement and can under the mal-conditions such as high temperature, radiation and sharp pounding work
The advantages of making is used widely in the every field of industrial and agricultural production.
The content of the invention
The invention aims to solve above-mentioned problems of the prior art, and provide a kind of medical micro- electric capacity
Ultrasonic transducer face battle array probe and preparation method thereof.
The present invention is achieved through the following technical solutions：
A kind of medical micro- electric capacity ultrasonic transducer face battle array probe, including silicon substrate, the upper surface of the silicon substrate is oxide layer, institute
The upper surface for stating oxide layer offers some cavitys, and the upper surface of the oxide layer is bonded vibration film, the vibration film
Upper surface sets separation layer, and the isolation channel of sinking is offered around the edge and its inside of separation layer, and the isolation channel is passed through
After wearing separation layer and vibration film, its bottom land is opened in oxide layer；Just to each cavity on the upper surface of the separation layer
Center position is provided with Top electrode.
Some cavitys in the oxide layer form an array element after being located in same area of isolation；The separation layer it is upper
The edge position that surface is located in an array element is provided with a pad, between the two adjacent Top electrodes often arranged in an array element
And connected by metal lead wire between two adjacent Top electrodes of each column, a Top electrode of the pad and its nearest neighbours it
Between by metal lead wire connect.
Phosphorus is injected at the silicon substrate back side, and row metal of going forward side by side sputters to form bottom electrode.
Multiple array elements are in a row, column alignment arrangement, form CMUT faces battle array, and face battle array is arranged as M*N, and the medical micro- electric capacity of composition surpasses
Sonic transducer face battle array probe.
During work, DC voltage is applied on the upper/lower electrode of face battle array probe, electrostatic force will be produced between two-plate,
Vibration film is pulled to substrate in the presence of electrostatic force, now applies and vibration film working frequency identical on upper/lower electrode
Alternating voltage, can so be such that film constantly vibrates, and realize the function of transmitting ultrasonic wave.When being applied with certain DC offset voltage
When effect has extraneous acoustic pressure on vibration film, vacuum cavity distance changes, and capacitance variations, external circuit can cause capacitance variations
Electric current be converted to measurable voltage signal, realize the reception of ultrasonic wave.
The preparation method of above-mentioned medical micro- electric capacity ultrasonic transducer face battle array probe, comprises the following steps：
（1）, selection silicon chip and SOI wafer, and carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some cavitys；
（4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（6）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（7）, in the upper surface splash-proofing sputtering metal of separation layer, and with peel off method formed Top electrode and pad；
（8）, etch isolation channel around the edge and inside of separation layer, form array element array, and with TMAH solution corruption
Lose isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, each Top electrode and pad connected by metal lead wire；
（10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms bottom electrode.
The present invention is reasonable in design, and medical micro- electric capacity ultrasonic transducer face battle array probe has that structure is novel, lightweight, volume
It is small, have the advantages that controllability is high, sensitivity is big, stray capacitance is small, with good marketing application value.
Brief description of the drawings
Fig. 1 represents the structural representation of energy converter planar battle array of the present invention.
Fig. 2-1 represents part A transducer array element of the present invention（Regular hexagon）Structural representation.
Fig. 2-2 represents part A transducer array element of the present invention（It is circular）Structural representation.
Fig. 3 represents part B in Fig. 1（Also it is a unit cell）Sectional view.
Fig. 4 represents step 2 in transducer preparation method of the present invention）Schematic diagram.
Fig. 5 represents step 3 in transducer preparation method of the present invention）Schematic diagram.
Fig. 6 represents step 4 in transducer preparation method of the present invention）Schematic diagram.
Fig. 7 represents step 5 in transducer preparation method of the present invention）Schematic diagram.
Fig. 8 represents step 6 in transducer preparation method of the present invention）Schematic diagram.
Fig. 9 represents step 7 in transducer preparation method of the present invention）Schematic diagram.
Figure 10 represents step 8 in transducer preparation method of the present invention）Schematic diagram.
In figure：1- silicon substrates, 2- oxide layers, 3- cavitys, 4- vibration films, 5- separation layers, 6- isolation channels, 7- Top electrodes,
8- pads, 9- metal lead wires.
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with the accompanying drawings.
A kind of medical micro- electric capacity ultrasonic transducer face battle array probe, as shown in figure 1, by multiple array element A in a row, column alignment cloth
Put, form CMUT faces battle array probe, face battle array can be arranged as M*N, wherein M can value 16 ~ 512, N can value 16 ~ 512.
As shown in figure 3, the sectional view of single cell in each array element is represented, including silicon substrate 1, the upper surface of silicon substrate 1
It is oxide layer 2, the upper surface of oxide layer 2 offers some cylinders or regular hexagon cavitys 3, such as Fig. 2-1, shown in 2-2, if
Dry cavity 3 is in a row, column alignment arrangement or diagonally arranged, the upper surface bonding vibration film 4 of oxide layer 2, the upper table of vibration film 4
Face sets separation layer 5, and the isolation channel 6 of sinking is offered around the edge and inside of separation layer 5（Isolation channel is used to separate each
Array element）, after separation layer 5 and vibration film 4, its bottom land is opened in oxide layer 2 isolation channel 6.On the upper surface of separation layer 5
Just to being provided with Top electrode 7 at the position at each center of cavity 3（Form graphical Top electrode）, some cavitys in oxide layer 23
An array element is formed after in same area of isolation；The edge position that the upper surface of separation layer 5 is located in an array element is set
There is a pad 8, between the two adjacent Top electrodes 7 often arranged in an array element and between two adjacent Top electrodes 7 of each column
Connected by metal lead wire 9, connected by metal lead wire 9 between pad 8 and a Top electrode 7 of its nearest neighbours, form one
Array element.
The preparation method of above-mentioned medical micro- electric capacity ultrasonic transducer face battle array probe, comprises the following steps：
1）, selection 6 cun of silicon chips and 6 cun of SOI wafers, and carry out standard RCA clean, remove various organic matters, golden dust and nature
Oxide layer etc., resistivity is 0.01 ~ 0.08 Ω .cm；
2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer, as shown in Figure 4；
3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some cylindrical cavities, as shown in Figure 5；
4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding, as shown in Figure 6；
5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film, as shown in Figure 7；
6）, deposit on vibration film using LPCVD techniques one layer of silicon dioxide layer as separation layer, as shown in Figure 8；
7）In the upper surface splash-proofing sputtering metal of separation layer, and Top electrode and pad are formed with the method peeled off, as shown in Figure 9；
8）, etch around the edge and inside of separation layer the part to form isolation channel（Form array element array）, it is used in combination
TMAH solution corrodes and isolation channel, and after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel, such as Figure 10
It is shown；
9）, by metal lead wire connect an array element in each Top electrode and pad；
10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms electricity under integration
Pole（It is not drawn into figure）.
The present invention solves miniature piezoelectric transducer array using the miniaturization of CMUT probes and the advantage of array Integrated manufacture
Cost of manufacture is high and raising imaging effect has technical bottleneck.The design goes out the micro- of small vacuum cavity and thin vibration silicon fiml
Capacitance structure, is the key for making CMUT devices and two-dimensional array.Microvibration unit uses hexagon film or circular membrane,
Arrangement is even closer, and repeat unit increases under limited area, improves transducer sensitivity.
Can reduce dead resistance and post by CMUT two-dimensional arrays and the interconnecting method and technique of its signal amplification circuit
The interconnection process of raw electric capacity, realizes the interconnection of transducer array and circuit, realizes transducer chip functions, improves reliability
Property and realize high s/n ratio Detection of Weak Signals.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
It has been described in detail according to the embodiment of the present invention, it will be understood by those within the art that, to technical scheme
Modify or equivalent, without departure from the spirit and scope of technical scheme, it all should cover claim
In protection domain.
Claims (4)
1. a kind of medical micro- electric capacity ultrasonic transducer face battle array is popped one's head in, it is characterised in that：Including silicon substrate（1）, the silicon substrate（1）
Upper surface be oxide layer（2）, the oxide layer（2）Upper surface offer some cavitys（3）, the oxide layer（2）It is upper
Surface bond vibration film（4）, the vibration film（4）Upper surface set separation layer（5）, around separation layer（5）Surrounding
At edge and its inside offers the isolation channel of sinking（6）, the isolation channel（6）Through separation layer（5）And vibration film（4）Afterwards,
Its bottom land is opened in oxide layer（2）On；The separation layer（5）Upper surface on just to each cavity（3）Center position set
There is Top electrode（7）；
The oxide layer（2）On some cavitys（3）An array element is formed after in same area of isolation；The separation layer
（5）Upper surface be located at an array element in edge position be provided with a pad（8）, two often arranged in array element are adjacent
Top electrode（7）Between and each column two adjacent Top electrodes（7）Between pass through metal lead wire（9）Connection, the pad（8）With
One Top electrode of its nearest neighbours（7）Between pass through metal lead wire（9）Connection；
Multiple array elements are in a row, column alignment arrangement, form CMUT faces battle array, and face battle array is arranged as M*N, and the medical micro- electric capacity ultrasound of composition is changed
Can device face battle array probe.
2. medical micro- electric capacity ultrasonic transducer face battle array according to claim 1 is popped one's head in, it is characterised in that：The cavity（3）
It is shaped as regular hexagon or circle.
3. medical micro- electric capacity ultrasonic transducer face battle array according to claim 1 and 2 is popped one's head in, it is characterised in that：The M values
16 ~ 512, the N values 16 ~ 512.
4. the preparation method that a kind of medical micro- electric capacity ultrasonic transducer face battle array is popped one's head in, it is characterised in that：Comprise the following steps：
（1）, selection silicon chip and SOI wafer, and carry out standard RCA clean；
（2）, oxidation processes are carried out to silicon chip, its upper and lower surface is all formed oxide layer；
（3）, photoetching is carried out in the oxide layer of silicon chip upper surface, etch some cavitys；
（4）, carry out to silicon chip standard RCA clean and go forward side by side line activating, the oxide layer and SOI wafer that silicon chip upper surface is made after activation are entered
Row low-temperature bonding；
（5）, the substrate silicon of SOI wafer is corroded with TMAH solution after bonding, fall silicon chip with BOE solution corrosions again after cleaning
The oxide layer in oxide layer and SOI wafer on lower surface, silicon chip now is the remaining silicon layer of silicon substrate, SOI wafer i.e.
It is vibration film；
（6）, layer of silicon dioxide layer deposited on vibration film as separation layer using LPCVD techniques；
（7）, in the upper surface splash-proofing sputtering metal of separation layer, and with peel off method formed Top electrode and pad；
（8）, etch isolation channel around the edge and inside of separation layer, form array element array, and with TMAH solution corruption
Lose isolation channel, after separation layer and vibration film, its bottom land is opened in oxide layer isolation channel；
（9）, each Top electrode and pad connected by metal lead wire；
（10）, at the back side of silicon chip inject phosphorus, form good Ohmic contact with silicon chip, and splash-proofing sputtering metal forms bottom electrode.
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| CN201710009234.6A CN106865483A (en) | 2017-01-06 | 2017-01-06 | Medical micro- electric capacity ultrasonic transducer face battle array probe and preparation method thereof |
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| CN201710009234.6A CN106865483A (en) | 2017-01-06 | 2017-01-06 | Medical micro- electric capacity ultrasonic transducer face battle array probe and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109171816A (en) * | 2018-09-05 | 2019-01-11 | 中北大学 | It is a kind of for checking the ultrasonic CT system and its scan method of mammary gland |
| CN110057907A (en) * | 2019-03-22 | 2019-07-26 | 天津大学 | A kind of CMUT and preparation method for gas sensing |
| WO2019223071A1 (en) * | 2018-05-22 | 2019-11-28 | 清华大学 | Capacitive ultrasonic transducer and manufacturing method therefor |
| CN114130636A (en) * | 2021-11-24 | 2022-03-04 | 武汉大学 | Piezoelectric type MEMS ultrasonic transducer |
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Application publication date: 20170620 |