CN106185790B - Semiconductor structure and forming method thereof - Google Patents
Semiconductor structure and forming method thereof Download PDFInfo
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- CN106185790B CN106185790B CN201510225523.0A CN201510225523A CN106185790B CN 106185790 B CN106185790 B CN 106185790B CN 201510225523 A CN201510225523 A CN 201510225523A CN 106185790 B CN106185790 B CN 106185790B
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Abstract
A kind of semiconductor structure and forming method thereof, the forming method of the semiconductor structure include：Substrate is provided, the substrate has first surface and the second surface relative with the first surface；The first device is formed on the first surface of the substrate；Form the cushion of covering substrate first surface and the first device；In the buffer-layer surface bonding protective film, the diaphragm has pore space structure, and described hole structure includes multiple holes.The forming method of above-mentioned semiconductor structure can avoid forming gas bulge between cushion and diaphragm, improve the reliability when protective value and subsequent technique board crawl substrate of diaphragm.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of semiconductor structure and forming method thereof.
Background technology
MEMS (micro-electron-mechanical system, MEMS), which is used as, originates from 90 years last century
The advanced manufacturing technology interdisciplinary in generation, it is widely used in improving people's quality of life, improve people's living standard and strengthening state
Power.MEMS is the Micrometer-Nanometer Processing Technology using semiconductor integrated circuit, and sensor, brake, control circuit etc. are collected
Into the technology on micro chip, also referred to as nanometer technique.At present, obtained in fields such as communication, automobile, optics, biologies
It is widely applied.
In some MEMS fields, in order to meet the functional requirement of device, it usually needs in tow sides all shapes of wafer
Into device.Generally after a side surface shaper part of wafer, continue the opposite side in wafer by the opposite side of wafer upward
Surface forms device, and the side crystal column surface for now having formed device is down, is placed in board surface, be easily contaminated and
Damage.
Moreover, in the transmitting procedure of wafer, wafer is adsorbed by the manipulator of board and conveyed, now manipulator
The device that formed can be caused to damage.It is generally necessary to the side crystal column surface pad pasting of device is being originally formed, to protect
Device through formation, the device is avoided to be sustained damage in follow-up technological process.
But prior art, during pad pasting is carried out to crystal column surface, gas bulge phenomenon, which often occurs, (please join
Examine gas bulge 10 in Fig. 1) so that film surface out-of-flatness so that in subsequent process flow, the manipulator of board can not be smooth
Grasping silicon wafer, so as to influence transporting for wafer, also, the pad pasting of gas bulge is produced, the protection for the device on wafer is made
With being also affected.
The content of the invention
It is of the invention to solve the problems, such as to be to provide a kind of semiconductor structure and forming method thereof, improve the semiconductor structure of formation
Performance.
To solve the above problems, the present invention provides a kind of forming method of semiconductor structure, including：Substrate is provided, it is described
Substrate has first surface and the second surface relative with the first surface；First is formed on the first surface of the substrate
Device；Form the cushion of covering substrate first surface and the first device；In the buffer-layer surface bonding protective film, the guarantor
Cuticula has pore space structure, and described hole structure includes multiple holes.
Optionally, include in the method for the buffer-layer surface bonding protective film：Film is provided, the film is beaten
Hole, form the film with pore space structure；Then the film is pasted onto buffer-layer surface, forms diaphragm.
Optionally, described hole is shaped as circular, oval, square or triangle.
Optionally, when described hole is circular, a diameter of 1mm~5mm of hole.
Optionally, the spacing between adjacent holes is 10mm~20mm.
Optionally, the thickness of the diaphragm is
Optionally, the diaphragm is blue film or UV films.
Optionally, the material of the cushion is photoresist or organic antireflection layer.
Optionally, the thickness of the cushion is
Optionally, include in the method for the buffer-layer surface bonding protective film：Film is pasted in the buffer-layer surface；
The defects of scanning film surface, obtain the gas bulge position between film and cushion；Gas bulge is punctured, recovers film
It is smooth, form the diaphragm with pore space structure.
Optionally, the defects of film surface being scanned by Defect Scanning board.
Optionally, after Defect Scanning board obtains film surface figure, compared with not having defective film pattern,
Obtain the gas bulge positional information between film and cushion.
Optionally, gas bulge is punctured by chip probe tester table, film is recovered smooth.
Optionally, the film surface figure of acquisition and gas bulge positional information are transferred to chip by Defect Scanning board
Probe test board, the chip probe tester table pass through spy according to the gas bulge positional information on film surface figure
Pin punctures gas bulge, film is recovered smooth.
Optionally, first device is micro electro mechanical device.
Optionally, in addition to：After the diaphragm is formed, the second device is formed on the second surface of the substrate
Part.
Optionally, second device is micro electro mechanical device.
To solve the above problems, technical scheme also provides a kind of semiconductor junction formed using the above method
Structure, including：Substrate, the substrate have first surface and the second surface relative with the first surface；Positioned at the substrate
First surface on the first device；Cover the cushion of substrate first surface and the first device；Positioned at the buffer-layer surface
Diaphragm, the diaphragm has pore space structure, and described hole structure includes multiple holes.
Compared with prior art, technical scheme has advantages below：
Technical scheme provides a kind of forming method of semiconductor structure, and first is formed in the first surface of substrate
After device, cushion is formed on the first surface, the cushion covers the first device, then is pasted in the buffer-layer surface
Diaphragm, the diaphragm have pore space structure, and described hole structure includes multiple holes.Described hole is advantageous to discharge buffering
Gas between layer and diaphragm, avoid forming gas bulge between diaphragm and cushion, so as to keep diaphragm
Surface it is flat, so as to improve the protective effect of diaphragm, the board during subsequent technique is smoothly captured substrate, carry
Reliability of the high substrate in the transport process of subsequent technique.
Further, include in the method for the buffer-layer surface bonding protective film：Film is provided, the film is beaten
Hole, form the film with pore space structure；Then the film is pasted onto buffer-layer surface, forms diaphragm.Described thin
Hole is formed on film and then film is pasted onto buffer-layer surface, in taping process, between the film and cushion
Gas can run through hole discharge, so as to avoid that gas bulge is formed between film and cushion.
Further, the quantity of the hole formed on the diaphragm and the density of hole can not be excessive, if the hole
The quantity in hole and the density of hole, which cross conference, to be caused to protect film-strength too small, easily damaged, pastes the tool on the buffer layer
After the diaphragm of hole, the diaphragm easily sustains damage, it is impossible to plays enough protective effects；And if the hole
The quantity in hole and the density of hole is too small can cause bonding protective film on the buffer layer during, diaphragm and cushion it
Between gas can not be discharged in time by hole, so as to cause between diaphragm and cushion formed gas bulge.It is also, described
If the size of hole is excessive, it can also influence to protect film strength, reduce the protective effect of diaphragm；And the size of described hole
If too small, gas can be prevented from being discharged quickly through hole, to cause during bonding protective film, in diaphragm with delaying
Rushing between layer has residual gas, forms gas bulge.So in technical scheme, between the adjacent holes
Spacing can be 10mm~20mm, and the diameter of hole can be 1mm~5mm, it is ensured that it is suitable that the hole on the diaphragm has
Quantity and density.
Further, include in the method for the buffer-layer surface bonding protective film：Film is pasted in the buffer-layer surface；
The defects of scanning film surface, obtain the gas bulge position between film and cushion；Gas bulge is punctured, recovers film
It is smooth, form the diaphragm with pore space structure.By puncturing gas bulge, discharge the gas between cushion and film
Go, hole is formed in film, so as to form the diaphragm with pore space structure.After removing the gas bulge, Ke Yiti
The protective effect of high diaphragm, the board during subsequent technique is smoothly captured substrate, improve substrate in subsequent technique
The reliability transported in engineering.
Technical scheme provides a kind of semiconductor structure, and the semiconductor structure includes substrate, the substrate
Formed with the first device on first surface, the cushion of first surface and the first device is covered, positioned at the protection of buffer-layer surface
Film, the diaphragm have pore space structure.The pore space structure of the diaphragm is advantageous to the gas between cushion and diaphragm
Discharge, avoid forming gas bulge between the cushion and diaphragm.
Brief description of the drawings
Fig. 1 is the structural representation for the semiconductor structure that the prior art of the present invention is formed；
Fig. 2 to Figure 11 is that the semiconductor structure of the embodiment of the present invention forms the structural representation of process.
Embodiment
As described in the background art, prior art easily produces gas bulge when carrying out pad pasting to crystal column surface, influences
The protective effect of pad pasting so that board can not smooth grasping silicon wafer in subsequent technique.
In embodiments of the invention, the diaphragm pasted on substrate has pore space structure, can discharge gas, so as to
Gas bulge is avoided the formation of, ensures the smooth of diaphragm surface, so as to improve protective value so that board can in subsequent technique
Smoothly crawl substrate.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Refer to Fig. 2, there is provided substrate 100, the substrate 100 have first surface 101 and with the phase of first surface 101
To second surface 102.
The material of the substrate 100 includes the semi-conducting material such as silicon, germanium, SiGe, GaAs, and the substrate 100 can be with
It is that body material can also be composite construction such as silicon-on-insulator.Those skilled in the art can be according to forming on substrate 100
Semiconductor devices selects the type of the substrate 100, therefore the type of the substrate 100 should not limit the protection model of the present invention
Enclose.
In the present embodiment, the substrate 100 is monocrystalline silicon wafer crystal, subsequently in the table of first surface 101 and second of wafer 100
Face is respectively formed on micro electronmechanical (MEMS) device.In other embodiments of the invention, other can also be formed according to the actual requirements
The device of type.
Fig. 3 is refer to, the first device 201 is formed on the first surface 101 of the substrate 100.
In the present embodiment, first device 201 is MEMS, can be pressure sensor, acceleration transducer etc..
It is follow-up to need to form the second device on the second surface 102 of substrate 100, easily to the first table in forming process
The first device 201 formed on face 101 is polluted and damaged, so, formed on second surface 102 before second device,
Need to form diaphragm on the first surface 101 for having formed the first device 201, to protect the first device formed
201。
Fig. 4 is refer to, forms the cushion 200 of the device 201 of first surface 101 and first of covering substrate 100.
The material of the cushion 200 is the organic polymer being easily removed, in the present embodiment, the cushion 200
Material is photoresist.In other embodiments of the invention, the material of the cushion 200 can also be organic antireflection layer etc.
Material.
The material of the cushion 200 is flowable material, and the cushion 200 can be formed using spin coating proceeding,
To ensure that the surface of cushion 200 is flat.In in other implementations of the present invention, the cushion 200 can also formed
Afterwards, heated baking is carried out, solidifies the cushion 200.
The surface of cushion 200 is higher than the surface of the first device 201, covers the first surface 101 of substrate 100 and described
First device 201, the first device 201 is played a protective role.It is described subsequently in the surface mount diaphragm of cushion 200
The one side that diaphragm contacts with cushion 200 has stronger viscosity, and the cushion 200 is located at diaphragm and the first device
Between 201, avoid diaphragm from directly being contacted with the first device 201, so as to avoid subsequently remove diaphragm again when, with the first device
201 are sticked together, and the first device 201 is caused to damage.
The cushion 200 needs have enough thickness, to ensure the first device 201 being completely covered；It is and described slow
The thickness for rushing layer 200 can not be excessive, avoids causing the thickness of material layer on the first surface 101 of whole substrate 100 excessive,
Influence the progress of subsequent technique processing procedure.In the present embodiment, the thickness of the cushion 200 is
Fig. 5 and Fig. 6 are refer to, in the surface mount diaphragm 202 of cushion 200, the diaphragm 202 has hole
Structure, described hole structure include multiple holes 203.Fig. 6 is the schematic top plan view of the diaphragm 202.
In the present embodiment, include in the method for the surface mount diaphragm 202 of cushion 200：Film is provided, to described
Film is punched, and forms the film with pore space structure；Then the film is pasted onto the surface of cushion 200, is formed and protected
Cuticula 202.
The material of the film can be blue film or UV film, and the thickness of the film isThe thickness
Ensure that the diaphragm 202 to be formed has enough intensity in subsequent technique, not cracky, so as to the first table to substrate 100
The device 201 of face 101 and first plays enough protective effects.
The film can be punched by puncher.In the present embodiment, described hole 203 is shaped as circle.
In other embodiments of the invention, the shape of described hole 203 can be circular, oval, square, triangle or other are more
Side shape.
Outlet of the described hole 203 as gas, avoid during bonding protective film 202, in diaphragm 202 with delaying
Rush and gas bulge is formed between layer 200.The arrangement mode of described hole 203 can be regularly arranged or irregular alignment side
Formula, such as matrix arrangement, or ranks are staggered.
The quantity of the hole 203 formed on the diaphragm 202 and the density of hole 203 can not be excessive, if described
The quantity of hole 203 and the density of hole 203, which cross conference, causes the intensity of diaphragm 202 too small, easily damaged, in cushion
After the diaphragm 202 with hole 203 is pasted on 200, the diaphragm 202 easily sustains damage, it is impossible to plays foot
Enough protective effects；And the if quantity of the described hole 203 and density of hole 203 is too small can cause on cushion 200
During bonding protective film 202, the gas between diaphragm 202 and cushion 200 can not be discharged by hole 203 in time,
So as to cause that gas bulge is formed between diaphragm 202 and cushion 200.
Also, if the size of described hole 203 is excessive, the intensity of diaphragm 202 can be also influenceed, reduces diaphragm 202
Protective effect；And if the size of described hole 203 is too small, gas can be prevented from being discharged quickly through hole, to cause
During bonding protective film 202, gas bulge is formed between diaphragm 202 and cushion 200.
In the present embodiment, the spacing between the adjacent holes 203 is 10mm~20mm, a diameter of 1mm of hole 203~
5mm, it is ensured that the hole on the diaphragm 202 has suitable quantity and density, so as to avoid causing the intensity of diaphragm 202
It is too small, cause protecting effect to weaken.
One side surface of the diaphragm 202 has viscosity, can be by laminator by the protection with hole 203
Film 202 is pasted onto the surface of cushion 200.In the present embodiment, rolled by the roller of laminator and diaphragm 202 is pasted onto buffering
200 surface of layer.
In taping process, the gas between diaphragm 202 and cushion 200 can be in time by diaphragm 202
Hole 203 is discharged, so as to avoid that gas bulge is formed between diaphragm 202 and cushion 200, so that the protection formed
The surfacing of film 202, be advantageous to board in subsequent technique and smoothly capture substrate, and improve diaphragm 202 to substrate 100 and
The protective effect of one device 201.
In another embodiment of the invention, include in the method for the buffer-layer surface bonding protective film：Described slow
Rush layer surface and paste film；The defects of scanning film surface, obtain the gas bulge position between film and cushion；Puncture gas
Body bulge, film is recovered smooth, form the diaphragm with pore space structure.Specifically, Fig. 7 to Figure 10 is refer to, for the present invention
Another embodiment in, in the schematic diagram of the forming process of the buffer-layer surface bonding protective film.
Fig. 7 and Fig. 8 are refer to, in the surface mount film 300 of cushion 200.Fig. 8 is to be glued on the surface of cushion 200
Paste the schematic top plan view after film 300.
One side surface of the film 300 has viscosity, the film 300 can be pasted onto into cushion by laminator
200 surfaces.In the present embodiment, rolled by roller and film 300 is pasted onto the surface of cushion 200.
Because the film 300 is complete film, in taping process, the gas between film 300 and cushion 200
It can not in time exclude, cause after film 300 is pasted, gas bulge 301 is formed between film 300 and cushion 200 (please
With reference to figure 8).In the present embodiment, example is used as to form two gas bulges 301.In other embodiments of the invention, also may be used
With the gas bulge with other quantity, and the position of gas bulge can also be different from the present embodiment.
The gas bulge 301 causes the surface irregularity of film 300, both have impact on cushion 200 of the film 300 to lower section
And first device 201 protective effect, during subsequent technique is moved and handled to substrate 100, board
Manipulator also can not realize smoothly crawl by the first surface of substrate.
On the cushion 200 paste film 300 after, scan 300 surface of film the defects of, obtain film 300 with
The position of gas bulge 301 between cushion 200.
In the present embodiment, by Defect Scanning (Defect Scan) board scan 300 surface of film the defects of, it is described lack
Fall into the gas bulge 301 i.e. between film 300 and cushion 200.
Specifically, the Defect Scanning board has device of image scanning, film is obtained by the device of image scanning
After 300 surfacial pattern, by the surfacial pattern of the film 300 compared with not having defective film surface figure, from
And the position of the gas bulge 301 between film 300 and cushion 200 is obtained, the position of the gas bulge 301 can pass through
Transverse and longitudinal coordinate numerical representation method.In other embodiments of the invention, can also be on the surfacial pattern of the film 300 of acquisition
Mark the position of the gas bulge 301.
Fig. 9 and Figure 10 are refer to, punctures gas bulge 301 (refer to Fig. 8), film 300 (refer to Fig. 8) is recovered flat
It is whole, form the diaphragm with hole 302.Fig. 8 is the schematic top plan view of the diaphragm.
In the present embodiment, gas bulge 301 is punctured using chip probe tester table 500.The chip probe test
Board includes probe 501.The chip probe tester table 500 is generally used for the test of chip performance, passes through the probe 501
Voltage or electric current are applied to the test solder joint on chip, so as to test the performance of chip.In the present embodiment, using described
The probe 501 of chip probe tester table 500, puncture the gas bulge between film 300 and cushion 200 (refer to Fig. 7)
301 (refer to Fig. 8).
Specifically, the substrate 100 formed with film 300 (refer to Fig. 7) is positioned on objective table, the of substrate 100
One surface 101 (refer to Fig. 7) is upward；Defect Scanning board rouses the surfacial pattern of the film 300 obtained and gas
The positional information of bag 301 is transferred to chip probe tester table 500；The chip probe tester table 500 is according to the thin of acquisition
The positional information of gas bulge 301 on film surfacial pattern, the gas bulge 301 on the substrate 100 is pierced by probe 501
It is broken, hole 302 is formed on film 300, the gas in the gas bulge 301 is discharged by hole 302, so that
It is flat to obtain the surface recovery of film 300.
After the gas bulge 301 is punctured, hole 302 is formed in the film 300, on the surface of cushion 200
Diaphragm as described in Figure 10 is formed, the diaphragm has pore space structure.
It is the pore space structure by diaphragm in above-described embodiment, discharges the gas between diaphragm and cushion,
So as to avoid that gas bulge is formed between diaphragm and cushion.
Figure 11 is refer to, in other embodiments of the invention, is formed and protected on the first surface 101 of the substrate 100
After cuticula, in addition to the second device 103 is formed on the second surface 102 of substrate 100.Figure 11 is to be formed on the basis of Fig. 5
The structural representation of second device 103.
Second device 103 can be micro electro mechanical device or other semiconductor devices.Forming second device 103
During, down, the diaphragm 202 protects first device 201 to the first surface 102 formed with the first device 201,
Avoid during the second device 103 is formed, making the first device 201 sustain damage, influence the performance of the first device 201.
During forming second device 103, board is captured by the first surface 101 of the substrate 100 formed with diaphragm 202
Substrate 100.Because the diaphragm 202 has pore space structure, avoid forming gas between cushion 200 and diaphragm 202
Bulge, so, board can smoothly capture substrate 100 so that subsequent technique is smooth during the second device 103 is formed
Carry out.
Embodiments of the invention also provide a kind of semiconductor structure formed using the above method.
Figure 11 is refer to, is the structural representation of the semiconductor structure.
The semiconductor structure includes：Substrate 100, the substrate 100 have first surface 101 and with the first surface
101 relative second surfaces 102；The first device 201 on the first surface 101 of the substrate 100；Cover substrate 100
The cushion 200 of the device 201 of first surface 101 and first；Diaphragm 202 positioned at the surface of cushion 200, the protection
Film 202 has pore space structure, and described hole structure includes multiple holes.
The semiconductor structure also includes the second device 103 on the second surface 102 of substrate 100.
The device 103 of first device 201 and second can be micro electro mechanical device.
Hole on the diaphragm 202 is shaped as circular, oval, square, triangle or other polygons.It is adjacent
Spacing between hole is 10mm~20mm.In the present embodiment, described hole is shaped as circle, and a diameter of 1mm of hole~
5mm。
The thickness of the diaphragm 202 isThe material of the diaphragm 202 can be blue film or UV
Film.
The material of the cushion 200 is photoresist or organic antireflection layer.The thickness of the cushion 200 is
The pore space structure of the diaphragm 202 is advantageous to the gas discharge between cushion 200 and diaphragm 202, avoids
Gas bulge is formed between the cushion 200 and diaphragm 202, so that the board in subsequent technique can be captured smoothly
The substrate 100.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (18)
- A kind of 1. forming method of semiconductor structure, it is characterised in that including：Substrate is provided, the substrate has first surface and the second surface relative with the first surface；The first device is formed on the first surface of the substrate；The cushion of covering substrate first surface and the first device is formed, the cushion has flat surface；In the buffer-layer surface bonding protective film, the diaphragm has pore space structure, and described hole structure includes multiple holes Hole, the gas between described hole discharge cushion and diaphragm.
- 2. the forming method of semiconductor structure according to claim 1, it is characterised in that pasted in the buffer-layer surface The method of diaphragm includes：Film is provided；The film is punched, forms the film with pore space structure；Will be described thin Film is pasted onto buffer-layer surface, forms diaphragm.
- 3. the forming method of semiconductor structure according to claim 2, it is characterised in that described hole is shaped as justifying Shape, ellipse, square or triangle.
- 4. the forming method of semiconductor structure according to claim 2, it is characterised in that when described hole is circular, hole A diameter of 1mm~5mm in hole.
- 5. the forming method of semiconductor structure according to claim 2, it is characterised in that the spacing between adjacent holes is 10mm~20mm.
- 6. the forming method of semiconductor structure according to claim 1, it is characterised in that the thickness of the diaphragm is
- 7. the forming method of semiconductor structure according to claim 1, it is characterised in that the diaphragm is blue film or UV Film.
- 8. the forming method of semiconductor structure according to claim 1, it is characterised in that the material of the cushion is light Photoresist or organic antireflection layer.
- 9. the forming method of semiconductor structure according to claim 1, it is characterised in that the thickness of the cushion is
- 10. the forming method of semiconductor structure according to claim 1, it is characterised in that glued in the buffer-layer surface The method of pasting protective film includes：Film is pasted in the buffer-layer surface；The defects of scanning film surface, obtain film and buffering Gas bulge position between layer；Gas bulge is punctured, film is recovered smooth, forms the diaphragm with pore space structure.
- 11. the forming method of semiconductor structure according to claim 10, it is characterised in that swept by Defect Scanning board The defects of retouching film surface.
- 12. the forming method of semiconductor structure according to claim 11, it is characterised in that Defect Scanning board obtains thin After film surfacial pattern, compared with not having defective film pattern, the gas bulge position between film and cushion is obtained Confidence ceases.
- 13. the forming method of semiconductor structure according to claim 10, it is characterised in that pass through chip probe test machine Platform punctures gas bulge, film is recovered smooth.
- 14. the forming method of semiconductor structure according to claim 13, it is characterised in that Defect Scanning board will obtain Film surface figure and gas bulge positional information be transferred to chip probe tester table, the chip probe tester table According to the gas bulge positional information on film surface figure, gas bulge is punctured by probe, film is recovered smooth.
- 15. the forming method of semiconductor structure according to claim 1, it is characterised in that first device is microcomputer Electrical part.
- 16. the forming method of semiconductor structure according to claim 1, it is characterised in that also include：Forming the guarantor After cuticula, the second device is formed on the second surface of the substrate.
- 17. the forming method of semiconductor structure according to claim 16, it is characterised in that second device is microcomputer Electrical part.
- It is 18. a kind of according to the semiconductor structure that any forming method is formed in claim 1 to 17, it is characterised in that including：Substrate, the substrate have first surface and the second surface relative with the first surface；The first device on the first surface of the substrate；Cover the cushion of substrate first surface and the first device；Positioned at the diaphragm of the buffer-layer surface, the diaphragm has pore space structure, and described hole structure includes multiple holes Hole, the gas between described hole discharge cushion and diaphragm.
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| CN101472212B (en) * | 2007-12-24 | 2012-10-10 | 北京大学 | Post-CMOS capacitance silicon-based micro-microphone and preparation method thereof |
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