CN106168517A - A kind of high sensitivity integrated pressure sensor - Google Patents
A kind of high sensitivity integrated pressure sensor Download PDFInfo
- Publication number
- CN106168517A CN106168517A CN201610837201.6A CN201610837201A CN106168517A CN 106168517 A CN106168517 A CN 106168517A CN 201610837201 A CN201610837201 A CN 201610837201A CN 106168517 A CN106168517 A CN 106168517A
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- China
- Prior art keywords
- silicon
- pressure sensor
- varistor
- lining
- sensor
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of high sensitivity integrated pressure sensor, it is characterised in that: including shell, core body and modulate circuit, described shell, for sealing structure, is provided with core body and modulate circuit in it；Described core body includes the array of pressure sensors being made up of the pressure transducer of at least two；Described pressure transducer includes substrate, silicon lining, flexible sheet, silicon dioxide layer of protection and metal level；Described silicon lining is E shape silicon, and described substrate is rectangular silicon, and substrate and silicon lining are conjoined structure, is ladder cavity between substrate and silicon lining；The middle part of described silicon lining is provided with flexible sheet, and on flexible sheet, doping forms varistor, and varistor upper end is provided with silicon dioxide layer of protection；Described silicon dioxide layer of protection upper surface two ends are respectively arranged with metal level.The structure of existing pressure transducer is optimized by the pressure transducer that the present invention provides, and has the highest integrated level and the good linearity, highly sensitive.
Description
Technical field
The present invention relates to art of pressure sensors, especially a kind of high sensitivity integrated pressure sensor.
Background technology
Pressure transducer is a kind of sensor the most commonly used in industrial practice, and it is widely used in various industry automatic control ring
Border, relate to water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships,
Numerous industry such as lathe, pipeline.The sensitivity of current pressure transducer is the most on the low side, the linearity is poor.Improve sensor
Method is in addition to using Large strain coefficient material as sensing element, it is also possible to physical dimension, the position of resistance to sensing element
Put and be optimized with size.
Summary of the invention
The goal of the invention of the present invention is: for the problem of above-mentioned existence, it is provided that a kind of employing E shape silicon lining, in using
Between the flexible sheet of back-shaped island structure, and use U-shaped varistor, pressure transducer be optimized, be simultaneously provided with conditioning electricity
The integrated pressure sensor with good linearity on road.
The technical solution used in the present invention is as follows:
One high sensitivity integrated pressure sensor of the present invention, including shell, core body and modulate circuit, described shell is for sealing knot
Structure, is provided with core body and modulate circuit in it；Described core body includes the pressure sensing being made up of the pressure transducer of at least two
Device array；Described pressure transducer includes substrate, silicon lining, flexible sheet, silicon dioxide layer of protection and metal level；Described silicon serves as a contrast
Layer is E shape silicon, and described substrate is rectangular silicon, and substrate and silicon lining are conjoined structure, is ladder cavity between substrate and silicon lining；
The middle part of described silicon lining is provided with flexible sheet, and on flexible sheet, doping forms varistor, and varistor upper end sets
There is silicon dioxide layer of protection；Described silicon dioxide layer of protection upper surface two ends are respectively arranged with metal level.
One high sensitivity integrated pressure sensor of the present invention, described flexible sheet is middle back-shaped island structure, diaphragm four
Being connected to varistor on individual limit, described varistor is U-shaped varistor.
In above structure, U-shaped varistor be do not change resistance based on strip resistance in the case of shorten the length of resistance
Degree, makes resistance be in the region that stress is concentrated, it is thus achieved that higher sensitivity, in order to reduce the negative pressure inhibition effect of corner, is turning
Dense boron heavy doping is injected to reduce piezoresistance coefficient in crook.The flexible sheet distribution of force of middle back-shaped island structure is concentrated, and subtracts simultaneously
Little center degree of disturbing, has the good linearity.
One high sensitivity integrated pressure sensor of the present invention, the length of side of described flexible sheet is 2000um, described pressure-sensitive
The a length of 150um of resistance, the width of varistor is 20um.
One high sensitivity integrated pressure sensor of the present invention, described array of pressure sensors is Y shape three-port structure, two
On the equidirectional impulse interface being fixed on a sensor of sensor.
Above Y shape three-port structure, by two equidirectional impulse interfaces being fixed on a sensor of sensor, is saved
Space so that multiple pressure transducers can be integrated on core body.
One high sensitivity integrated pressure sensor of the present invention, the manufacture method of described pressure transducer is: at Silicon Wafer
Back side anisotropic etching forms cavity, and the Silicon Wafer after etching is silicon lining；At the middle part of silicon lining, doping forms pressure-sensitive electricity
Resistance；The front of silicon lining deposits silicon dioxide layer of protection；Behind the two ends of silicon dioxide layer of protection respectively splash-proofing sputtering metal layer
Stripped formation metal interconnecting wires；Silicon lining and base silicon are carried out bonding packaging.
Commonly use in pressure transducer is the bonding of silicon and glass, owing to silicon is different with the coefficient of expansion of glass material,
Bonding process inevitably results from residual stress, and pressure transducer is the most sensitive for residual stress, use silicon
The bonding of silicon forms complete silicon structure, it is possible to the problem solving residual stress, improves the performance indications of sensor.
One high sensitivity integrated pressure sensor of the present invention, described modulate circuit is fixed on the side of sensor.
Modulate circuit is fixed on the side of sensor rather than as other pressure transducer modulate circuit plate by above structure
It is arranged on the surface of sensitive core body, is fixed on side and can reduce the height of single sensor, concede peace for communication board
Dress space.
One high sensitivity integrated pressure sensor of the present invention, it is integrated that described modulate circuit includes that three ends can align manostat
Circuit LM117, instrument amplifier AD620 and peripheral circuit；Described AD620 connects sensor bridge, and by electric capacity and LM117
Connect；Described LM117 provides power supply for sensor and AD620.
Above modulate circuit, has a fast response time, running voltage width, low in energy consumption, and reliable operation, scheduling and planning is convenient
Advantage.
One high sensitivity integrated pressure sensor of the present invention, described shell uses stainless steel casing, outside described rustless steel
The constituent of the Chemical Millering Polishing solution of shell in the ratio of concentration is: 30%H2O2150-220ml / L；H2SO45 ml
/ L；Stabilizer 10g/ L；Described Chemical Millering Polishing temperature is 50-70 DEG C, and polishing time is 5-10min.
After Chemical Millering Polishing, stainless steel casing surface smoothness, glossiness, corrosion resistance, Adhesion Resistance, aesthetic property, clear
Clean wholesomenesses etc. improve greatly, and the impurity such as the surface of the work after process is smooth, antibacterial dirt are eliminated and are difficult to adhere to, and make
With facilitating low cost.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows:
1, the integrated level of pressure transducer is high, and Y shape three-port structure is fixed on drawing of a sensor by equidirectional for two sensors
On crimping mouth, space, integrated multiple sensors are saved；Modulate circuit is fixed on the side of sensor, can reduce single biography
The height of sensor, concedes installing space for communication board.
2, pressure transducer is highly sensitive, U-shaped varistor be do not change resistance based on strip resistance in the case of
Shorten the length of resistance, make resistance be in the region that stress is concentrated, it is thus achieved that higher sensitivity；The elasticity of middle back-shaped island structure
Diaphragm applied force distribution is concentrated, and reduces center degree of disturbing simultaneously, has the good linearity.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the structural representation of sensor in the present invention.
Labelling in figure: 1 is substrate, and 2 is silicon lining, and 3 is flexible sheet, and 4 is silicon dioxide layer of protection, and 5 is metal level, 6
For varistor.
Fig. 2 is the structural representation of flexible sheet.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, except mutually exclusive
Feature and/or step beyond, all can combine by any way.
Any feature disclosed in this specification (including any accessory claim, summary), unless specifically stated otherwise,
By other equivalences or there is the alternative features of similar purpose replaced.I.e., unless specifically stated otherwise, each feature is a series of
An example in equivalence or similar characteristics.
Such as Fig. 1, one high sensitivity integrated pressure sensor of the present invention, including shell, core body and modulate circuit, described
Shell, for sealing structure, is provided with core body and modulate circuit in it；Described core body includes by the pressure transducer group of at least two
The array of pressure sensors become；Described pressure transducer includes substrate, silicon lining, flexible sheet, silicon dioxide layer of protection and gold
Belong to layer；Described silicon lining is E shape silicon, and described substrate is rectangular silicon, and substrate and silicon lining are conjoined structure, substrate and silicon lining it
Between be ladder cavity；The middle part of described silicon lining is provided with flexible sheet, and on flexible sheet, doping forms varistor, pressure
Quick resistance upper end is provided with silicon dioxide layer of protection；Described silicon dioxide layer of protection upper surface two ends are respectively arranged with metal level.
Such as Fig. 2, one high sensitivity integrated pressure sensor of the present invention, described flexible sheet is middle back-shaped island structure,
Diaphragm is connected to varistor on four limits, and described varistor is U-shaped varistor.
One high sensitivity integrated pressure sensor of the present invention, the length of side of described flexible sheet is 2000um, described pressure-sensitive
The a length of 150um of resistance, the width of varistor is 20um.
One high sensitivity integrated pressure sensor of the present invention, described array of pressure sensors is Y shape three-port structure, two
On the equidirectional impulse interface being fixed on a sensor of sensor.
One high sensitivity integrated pressure sensor of the present invention, the manufacture method of described pressure transducer is: at Silicon Wafer
Back side anisotropic etching forms cavity, and the Silicon Wafer after etching is silicon lining；At the middle part of silicon lining, doping forms pressure-sensitive electricity
Resistance；The front of silicon lining deposits silicon dioxide layer of protection；Behind the two ends of silicon dioxide layer of protection respectively splash-proofing sputtering metal layer
Stripped formation metal interconnecting wires；Silicon lining and base silicon are carried out bonding packaging.
One high sensitivity integrated pressure sensor of the present invention, described modulate circuit is fixed on the side of sensor.
One high sensitivity integrated pressure sensor of the present invention, it is integrated that described modulate circuit includes that three ends can align manostat
Circuit LM117, instrument amplifier AD620 and peripheral circuit；Described AD620 connects sensor bridge, and by electric capacity and LM117
Connect；Described LM117 provides power supply for sensor and AD620.
One high sensitivity integrated pressure sensor of the present invention, described shell uses stainless steel casing, outside described rustless steel
The constituent of the Chemical Millering Polishing solution of shell in the ratio of concentration is: 30%H2O2150-220ml / L；H2SO45 ml
/ L；Stabilizer 10g/ L；Described Chemical Millering Polishing temperature is 50-70 DEG C, and polishing time is 5-10min.
The invention is not limited in aforesaid detailed description of the invention.The present invention expands to any disclose in this manual
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (8)
1. a high sensitivity integrated pressure sensor, it is characterised in that: include shell, core body and modulate circuit, described shell
For sealing structure, in it, it is provided with core body and modulate circuit；Described core body includes being made up of the pressure transducer of at least two
Array of pressure sensors；Described pressure transducer includes substrate, silicon lining, flexible sheet, silicon dioxide layer of protection and metal level；
Described silicon lining is E shape silicon, and described substrate is rectangular silicon, and substrate and silicon lining are conjoined structure, between substrate and silicon lining are
Ladder cavity；The middle part of described silicon lining is provided with flexible sheet, and on flexible sheet, doping forms varistor, pressure-sensitive electricity
Resistance upper end is provided with silicon dioxide layer of protection；Described silicon dioxide layer of protection upper surface two ends are respectively arranged with metal level.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described flexible sheet
For middle back-shaped island structure, diaphragm is connected to varistor on four limits, and described varistor is U-shaped varistor.
There is the integrated pressure sensor of good linearity the most as claimed in claim 2, it is characterised in that: described flexible sheet
The length of side be 2000um, a length of 150um of described varistor, the width of varistor is 20um.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described pressure sensing
Device array is Y shape three-port structure, on two equidirectional impulse interfaces being fixed on a sensor of sensor.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described pressure sensing
The manufacture method of device is: forming cavity in Silicon Wafer back side anisotropic etching, the Silicon Wafer after etching is silicon lining；Serve as a contrast at silicon
The middle part doping of layer forms varistor；The front of silicon lining deposits silicon dioxide layer of protection；At silicon dioxide layer of protection
Two ends respectively splash-proofing sputtering metal layer after form metal interconnecting wires through peeling off；Silicon lining and base silicon are carried out bonding packaging.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described modulate circuit
It is fixed on the side of sensor.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described modulate circuit
Manostat integrated circuit LM117, instrument amplifier AD620 and peripheral circuit can be aligned including three ends；Described AD620 connects sensing
Device electric bridge, and be connected with LM117 by electric capacity；Described LM117 provides power supply for sensor and AD620.
There is the integrated pressure sensor of good linearity the most as claimed in claim 1, it is characterised in that: described shell uses
Stainless steel casing, the constituent of the Chemical Millering Polishing solution of described stainless steel casing in the ratio of concentration is: 30%H2O2
150-220ml / L；H2SO45 ml / L；Stabilizer 10g/ L；Described Chemical Millering Polishing temperature is 50-70 DEG C, during polishing
Between be 5-10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837201.6A CN106168517A (en) | 2016-09-21 | 2016-09-21 | A kind of high sensitivity integrated pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837201.6A CN106168517A (en) | 2016-09-21 | 2016-09-21 | A kind of high sensitivity integrated pressure sensor |
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| Publication Number | Publication Date |
|---|---|
| CN106168517A true CN106168517A (en) | 2016-11-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610837201.6A Pending CN106168517A (en) | 2016-09-21 | 2016-09-21 | A kind of high sensitivity integrated pressure sensor |
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| Country | Link |
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| CN (1) | CN106168517A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109186819A (en) * | 2018-09-10 | 2019-01-11 | 博脉有限公司 | A kind of MEMS pressure sensor mould group |
| CN114993548A (en) * | 2022-05-30 | 2022-09-02 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
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2016
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109186819A (en) * | 2018-09-10 | 2019-01-11 | 博脉有限公司 | A kind of MEMS pressure sensor mould group |
| CN114993548A (en) * | 2022-05-30 | 2022-09-02 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
| CN114993548B (en) * | 2022-05-30 | 2023-09-01 | 无锡胜脉电子有限公司 | High-voltage silicon MEMS pressure sensor and preparation method thereof |
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Application publication date: 20161130 |