CN105892554B - The reference voltage source circuit of nonlinear compensation - Google Patents

The reference voltage source circuit of nonlinear compensation Download PDF

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Publication number
CN105892554B
CN105892554B CN201610485380.1A CN201610485380A CN105892554B CN 105892554 B CN105892554 B CN 105892554B CN 201610485380 A CN201610485380 A CN 201610485380A CN 105892554 B CN105892554 B CN 105892554B
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resistance
image current
oxide
metal
semiconductor
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CN105892554A (en
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邵博闻
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)

Abstract

The present invention discloses a kind of reference voltage source circuit of nonlinear compensation, it is characterised in that including：Four image current branches, three bipolar transistors, an operational amplifier and multiple resistance；The first end of the first end of 5th resistance and the 6th resistance is connected to the output node of the first image current branch and the output node of the second image current branch respectively, the second end of 5th resistance and the second end of the 6th resistance connect the first end of the 7th resistance at the same time, and the second end of the 7th resistance connects the output node of the 3rd image current branch；Two resistance in available circuit structure is instead of using three resistance, in the case of same electric current, the resistance value for being less than two resistance in available circuit figure of of the invention three resistance.The resistance of the reference voltage source circuit of the nonlinear compensation of the present invention uses less, more saves area.

Description

The reference voltage source circuit of nonlinear compensation
Technical field
The present invention relates to semiconductor integrated circuit field, more particularly to a kind of reference voltage source electricity of nonlinear compensation Road.
Background technology
Reference voltage source circuit is widely used in integrated circuits, it is typically provided with compensation circuit.Traditional compensation It is larger that circuit takes resistor area.As shown in Figure 1, be a kind of existing reference voltage source circuit compensation circuit figure, including four Image current branch, respectively by metal-oxide-semiconductor M1、M2、M3And M4Composition, output current is respectively I1、I2、I3And I4；Three ambipolar crystalline substances Body pipe Q1、Q2And Q3, and Q1And Q2In diode connection structure；Six resistance R0、R1、R2、R31’、R32' and R4；One computing is put Big device (OPA).Wherein Q1And Q3It is connected between the output node and ground of the first mirror image circuit branch and the 3rd mirror image circuit Between the output node and ground of branch, Q2Pass through resistance R0It is connected with the output node of the second mirror image circuit branch, R1、R2And R4Point It is not connected between the output node and ground of the first mirror image circuit branch, between the output node and ground of the second mirror image circuit branch And the 4th mirror image circuit branch output node and ground between, the output node of the 4th mirror image circuit branch is as reference voltage Output terminal OUT, two input terminals of the output node difference concatenation operation amplifier (OPA) of first and second image current, and R31’ It is connected between the output node of the first mirror image circuit branch and the output node of the 3rd mirror image circuit branch, R32' it is connected to Between the output node of two mirror image circuit branches and the output node of the 3rd mirror image circuit branch.Thus, R is passed through31’、R32’、M3 And Q3The compensation circuit of the reference voltage source circuit is formed, wherein, flow through Q1And Q2Be the electric current I directly proportional to temperatureDVBE, Flow through Q3Be temperature independent electric current I3=IDVBE+IVBE, the curvature of VBE is different under different temperatures coefficient, R31' and R32' on form voltage difference, produce nonlinear compensation electric current INL, then I4=I2=IDVBE+IVBE+INL, but the shortcomings that the compensation circuit It is that compensation resistance is larger.
The content of the invention
The technical problems to be solved by the invention are, there is provided the nonlinear compensation that a kind of resistance uses less, area saves Reference voltage source circuit.
In order to solve the above technical problems, the reference voltage source circuit of nonlinear compensation provided by the invention includes：Four mirrors Image current branch, three bipolar transistors, an operational amplifier and multiple resistance.
Four image current branches include the first image current branch, the second image current branch, the 3rd mirror image electricity Flow branch and the 4th image current branch, the output terminal of the output node of the 4th image current branch as reference voltage；
It is ambipolar that three bipolar transistors include the first bipolar transistor, the second bipolar transistor and the 3rd Transistor, the type of three bipolar transistors is identical, and the base stage of three bipolar transistors connects with collector It is in three diode structures to be connected together, and the emitter area of second bipolar transistor is first bipolar transistor N times and N of the emission area of pipe is more than 1；First bipolar transistor is connected to the defeated of the first image current branch Between egress and ground, the 3rd bipolar transistor is connected to the output node and ground of the 3rd image current branch Between；
The operational amplifier has normal phase input end, inverting input and an output terminal, the operational amplifier Normal phase input end and inverting input connect the output node and the first image current branch of the second image current branch respectively Output node, the output terminal of the operational amplifier control the size of four image current branches；
The multiple resistance, including：First resistor, the both ends of the first resistor connect second image current respectively The output node of branch and the second bipolar transistor, second bipolar transistor are connected to the first resistor and ground Between；Second resistance, the second resistance are connected between the output node and ground of the first image current branch；3rd resistor, institute 3rd resistor is stated to be connected between the output node and ground of the second image current branch；4th resistance, the 4th resistance connection Between the output node and ground of the 4th image current branch；
The multiple resistance, further includes：5th resistance, the 6th resistance and the 7th resistance, the first end of the 5th resistance Connect the output of the output node and the second image current branch of the first image current branch respectively with the first end of the 6th resistance Node, the second end of the 5th resistance and the second end of the 6th resistance while the first end for connecting the 7th resistance, the described 7th The second end of resistance connects the output node of the 3rd image current branch.
Further, the first image current branch route the first metal-oxide-semiconductor composition, the second image current branch route second Metal-oxide-semiconductor forms, and the 3rd image current branch route the 3rd metal-oxide-semiconductor composition, and the 4th image current branch route the 4th metal-oxide-semiconductor composition；Institute State the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor and connect operating voltage, first metal-oxide-semiconductor, Two metal-oxide-semiconductors, the 3rd metal-oxide-semiconductor, the grid of the 4th metal-oxide-semiconductor connect the output terminal of the operational amplifier, first metal-oxide-semiconductor, The drain electrode of two metal-oxide-semiconductors, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor is respectively the output node of the first image current branch, the second mirror image electricity Flow output node, the output node of the 3rd image current branch and the output node of the 4th image current branch of branch.
Further, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the size of the 4th metal-oxide-semiconductor are identical.
Further, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor are all PMOS tube.
Further, the resistance value of the 5th resistance is equal with the resistance value of the 6th resistance, and the resistance value of the 5th resistance is more than Equal to the output resistance between the output node of the first image current branch and the output node of the second image current branch.
Further, three bipolar transistors are all PNP pipe.
Further, three bipolar transistors are all managed for NPN.
The present invention is attainable to be had the technical effect that, by the 5th resistance, the 6th resistance, the 7th resistance and the 3rd metal-oxide-semiconductor and 3rd bipolar transistor constitutes the compensation circuit of reference voltage source circuit, and available circuit structure is instead of using three resistance In two resistance, in the case of same electric current, of the invention three resistance is less than in available circuit figure two resistance Resistance value.For example, in being typically designed, R31' and R32' equal, the 5th resistance and the 6th resistance are equal, under same current conditions, R31’ =the five the+the seven resistance × 2 of resistance, it is assumed that R31'=R32'=1M, then the 5th resistance and the 6th resistance are equal to 400K, the 7th electricity It is 1.1M (400K × 2+300K) that resistance, which is equal to the sum of 300K, the resistance value of three small resistors, is compared to the sum of resistance value of existing design 2.0M (1M × 2), the resistance of the reference voltage source circuit of nonlinear compensation of the invention use less, more save area.
Brief description of the drawings
Fig. 1 is the reference voltage source circuit figure of existing nonlinear compensation.
Fig. 2 is the reference voltage source circuit figure of the nonlinear compensation of the embodiment of the present invention.
Embodiment
Clear, complete description is carried out to technical scheme below in conjunction with attached drawing, it is clear that described implementation Example is the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this area Art personnel all other embodiments obtained on the premise of creative work is not made, belong to the model that the present invention protects Enclose.
As shown in Fig. 2, be the reference voltage source circuit figure of the nonlinear compensation of the embodiment of the present invention, four image current branch Road, three bipolar transistors, an operational amplifier and multiple resistance.
Wherein, four image current branches include the first image current branch, the second image current branch, the 3rd mirror image electricity Branch and the 4th image current branch are flowed, the electric current of four mirror image circuits is respectively I1、I2、I3And I4, the 4th image current branch Output terminal OUT of the output node as reference voltage；
Wherein, three bipolar transistors include the first bipolar transistor Q1, the second bipolar transistor Q2With the 3rd pair Bipolar transistor Q3, and the type of three bipolar transistors is identical；Q1、Q2And Q3Base stage and respective collector connect It is in three diode structures to be connected together；Wherein the second bipolar transistor Q2Emitter area be the first bipolar transistor Q1N times of emission area, and N is more than 1；First bipolar transistor Q1It is connected to the output node of the first image current branch That is between node A and ground GND, the 3rd bipolar transistor Q3It is connected to the output node and ground GND of the 3rd image current branch Between；
Wherein, operational amplifier has normal phase input end, inverting input and an output terminal, the operational amplifier Normal phase input end and inverting input connect the output node i.e. node B and the first image current of the second image current branch respectively The output node of branch, that is, node A, the output terminal of the operational amplifier control the size of four image current branches；
Wherein, multiple resistance, including：First resistor R0, the first resistor R0Both ends connect second mirror image respectively The output node of current branch, that is, node B and the second bipolar transistor Q2, the second bipolar transistor Q2It is connected to described One resistance R0Between ground GND；Second resistance R1, the second resistance R1It is connected to the output node of the first image current branch That is between node A and ground GND；3rd resistor R2, the 3rd resistor R2It is connected to the output node of the second image current branch i.e. Between node B and ground GND；4th resistance R4, the 4th resistance R4It is connected to the output node and ground of the 4th image current branch Between GND；
The multiple resistance, further includes：5th resistance R31, the 6th resistance R32With the 7th resistance R30, the 5th resistance R31 First end and the 6th resistance R32First end connect the output node i.e. node A and the second mirror of the first image current branch respectively The output node of image current branch, that is, node B, the 5th resistance R31Second end and the 6th resistance R32Second end connect at the same time Meet the 7th resistance R30First end, the 7th resistance R30Second end connect the 3rd image current branch output node.
The reference voltage source circuit of the nonlinear compensation of the present invention passes through the 5th resistance R31, the 6th resistance R32With the 7th electricity Hinder R30And the 3rd metal-oxide-semiconductor M3With the 3rd bipolar transistor Q3The compensation circuit of reference voltage source circuit is constituted, wherein, flow through Q1And Q2Be the electric current I directly proportional to temperatureDVBE, flow through R2Be the electric current I being inversely proportional with temperatureVBE, flow through Q3Be and temperature Spend unrelated electric current I3=IDVBE+IVBE.The present invention uses three resistance R31、R32And R30Two are instead of in available circuit structure Resistance R31' and R32', it is assumed that in the case of same electric current, of the invention three resistance is less than in available circuit figure two The resistance value of resistance.For example, in being typically designed, R31'=R32', R31=R32, under same current conditions, R31'=R31+R30× 2, it is false If R31'=R32'=1M, then R31=R32=400K, and R30=300K, then, three small resistor R31、R32And R30Resistance value it With for 1.1M (400K × 2+300K), compared to R in existing design31' and R32' the sum of resistance value be 2.0M (1M × 2), the present invention Nonlinear compensation reference voltage source circuit resistance using less, more save area.
In an embodiment of the present invention, the first image current branch route the first metal-oxide-semiconductor M1Composition, the second image current branch By the second metal-oxide-semiconductor M2Composition, the 3rd image current branch route the 3rd metal-oxide-semiconductor M3Composition, the 4th image current branch route the 4th MOS Pipe M4Composition；And the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4Source electrode connect operating voltage VDD, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4Grid connect the operational amplifier Output terminal, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4Drain electrode be respectively the first image current The output node of branch, that is, node A, output node, that is, node B of the second image current branch, the 3rd image current branch it is defeated The output node of egress and the 4th image current branch.In an embodiment of the present invention, the first metal-oxide-semiconductor M can be set1, Two metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4Size it is identical, then the electric current of each bar image current branch is then equal. In an embodiment of the present invention, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor are all PMOS tube.
In an embodiment of the present invention, the 5th resistance R can be set31Resistance value and the 6th resistance R32Resistance value it is equal, and 5th resistance R31More than or equal between the output node of the first image current branch and the output node of the second image current branch Output resistance.
First bipolar transistor Q in an embodiment of the present invention1, the second bipolar transistor Q2With the 3rd ambipolar crystalline substance Body pipe Q3All it is PNP pipe.In other embodiments, the first bipolar transistor Q1, the second bipolar transistor Q2It is bipolar with the 3rd Transistor npn npn Q3Can also all it be managed for NPN.
In conclusion the various embodiments described above and attached drawing are only presently preferred embodiments of the present invention, not limiting this The protection domain of invention, within the spirit and principles of the invention, any modification, equivalent substitution, improvement and etc. done, all should Comprising within the scope of the present invention.

Claims (6)

  1. A kind of 1. reference voltage source circuit of nonlinear compensation, it is characterised in that including：Four image current branches, three it is double Bipolar transistor, an operational amplifier and multiple resistance；
    Four image current branches include the first image current branch, the second image current branch, the 3rd image current branch Road and the 4th image current branch, the output terminal of the output node of the 4th image current branch as reference voltage；
    Three bipolar transistors include the first bipolar transistor, the second bipolar transistor and the 3rd bipolar transistor Pipe, the type of three bipolar transistors is identical, and the base stage of three bipolar transistors is connected to collector It is in three diode structures together, the emitter area of second bipolar transistor is first bipolar transistor N times and N of emission area is more than 1；First bipolar transistor is connected to the output section of the first image current branch Between point and ground, the 3rd bipolar transistor is connected between the output node and ground of the 3rd image current branch；
    The operational amplifier has normal phase input end, inverting input and an output terminal, the positive of the operational amplifier Input terminal and inverting input connect the output of the output node and the first image current branch of the second image current branch respectively Node, the output terminal of the operational amplifier control the size of four image current branches；
    The multiple resistance, including：First resistor, the both ends of the first resistor connect the second image current branch respectively Output node and the second bipolar transistor, second bipolar transistor is connected between the first resistor and ground； Second resistance, the second resistance are connected between the output node and ground of the first image current branch；3rd resistor, described Three resistance are connected between the output node and ground of the second image current branch；4th resistance, the 4th resistance are connected to Between the output node and ground of four image current branches；
    The multiple resistance, further includes：5th resistance, the 6th resistance and the 7th resistance, the first end of the 5th resistance and The first end of six resistance connects the output node of the first image current branch and the output node of the second image current branch respectively, The second end of 5th resistance and the second end of the 6th resistance connect the first end of the 7th resistance at the same time, the 7th resistance Second end connects the output node of the 3rd image current branch；
    The resistance value of 5th resistance is equal with the resistance value of the 6th resistance, and the resistance value of the 5th resistance is more than or equal to the first mirror image electricity Flow the output resistance between the output node of branch and the output node of the second image current branch.
  2. 2. the reference voltage source circuit of nonlinear compensation according to claim 1, it is characterised in that the first mirror image electricity Flow branch and route the first metal-oxide-semiconductor composition, the second image current branch route the second metal-oxide-semiconductor composition, the 3rd image current branch route the 3rd Metal-oxide-semiconductor forms, and the 4th image current branch route the 4th metal-oxide-semiconductor composition；First metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, The source electrode of 4th metal-oxide-semiconductor connects operating voltage, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the grid of the 4th metal-oxide-semiconductor Connect the output terminal of the operational amplifier, the drain electrode of first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor The respectively output node of the first image current branch, the output node of the second image current branch, the 3rd image current branch Output node and the 4th image current branch output node.
  3. 3. the reference voltage source circuit of nonlinear compensation according to claim 2, it is characterised in that first metal-oxide-semiconductor, Second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the size of the 4th metal-oxide-semiconductor are identical.
  4. 4. the reference voltage source circuit of the nonlinear compensation according to Claims 2 or 3, it is characterised in that the first MOS Pipe, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor are all PMOS tube.
  5. 5. the reference voltage source circuit of nonlinear compensation according to claim 1, it is characterised in that described three ambipolar Transistor is all PNP pipe.
  6. 6. the reference voltage source circuit of nonlinear compensation according to claim 1, it is characterised in that described three ambipolar Transistor is all managed for NPN.
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