CN105826165A - In-situ etching method - Google Patents
In-situ etching method Download PDFInfo
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- CN105826165A CN105826165A CN201510007373.6A CN201510007373A CN105826165A CN 105826165 A CN105826165 A CN 105826165A CN 201510007373 A CN201510007373 A CN 201510007373A CN 105826165 A CN105826165 A CN 105826165A
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Abstract
The invention provides an in-situ etching method. The method comprises steps: a processed SiC substrate processed by using ortho-axis 4H or 6H original silicon carbide SiC substrate is subjected to ultrasonic cleaning; an alkaline mixture is used for boiling the processed SiC substrate at a temperature of 85 DEG C for 20 m; a 5% hydrofluoric acid solution is used for immersing the processed SiC substrate for 10 m; an epitaxial furnace is used for carrying out in-situ etching on the processed SiC substrate with a zero deflection angle; when the temperature of the epitaxial furnace falls to about 700 DEG C, inrush of hydrogen is stopped; the processed SiC substrate with a SiC epitaxial layer is continuously cooled in an argon environment; and the processed SiC substrate is naturally cooled to a room temperature, and a SiC epitaxial wafer is taken out. According to the in-situ etching method of the invention, the best substrate surface morphology can be etched, and the SiC hetero epitaxial growth quality is enhanced.
Description
Technical field
The present invention relates to technical field of semiconductor, particularly relate to a kind of lithographic method in situ.
Background technology
Carborundum SiC is as one of the representative of semiconductor material with wide forbidden band, there is energy gap big, breakdown electric field is high, thermal conductivity is big, electronics saturation drift velocity is high, the superior character such as the chemical stability that capability of resistance to radiation is strong and good, become and manufacture a new generation's microelectronic component and the key semiconductor material of circuit after germanium, silicon, GaAs.Other hetero-junctions such as SiC/Si and AlGaN/GaN, are traditional being formed by chemical constituent change, and silicon carbide polytypes hetero-junctions are constant by chemical composition, prepared by crystal formation sudden change.Therefore the polymorphous hetero-junctions of carborundum has the advantage that
1) having insignificant thermally matched and that Lattice Matching: 3C-SiC and 6H-SiC is in (0001) face lattice mismatch less than 0.1%, prepare at substrate, process and in later device technology, the thermal mismatching of the two is less than 0.1%.Compared to other heterojunction devices such as SiC/Si and GaN/AlGaN, silicon carbide polytypes hetero-junctions has more preferable interfacial structure, and its device has more preferable stability and reliability；
2), there is not the mutual Elements Diffusion between hetero-junctions monocrystalline in identical chemical property；
3) 3C/6H-SiC hetero-junctions can reach about 2000cm comparable with AlGaN/GaN2The room temperature mobilities of/Vs and 3*1012cm-2Face electron density.
Feature based on silicon carbide polytypes hetero-junctions, adds carborundum itself and its distinctive character of many types of hetero-junctions so that it is have certain advantage and prospect in great power LED preparation and microwave power device application aspect.
But in SiC substrate, there is various defect, and these defects during carborundum hetero-epitaxy, would generally be inherited, device performance is produced and has a strong impact on.The impact how reducing defect becomes the focus of research at present.
Summary of the invention
It is an object of the invention to the defect for prior art, propose a kind of lithographic method in situ, to reduce the defect of the outer Yanzhong of SiC.
For achieving the above object, the invention provides a kind of lithographic method in situ, described method includes:
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Step 3, utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing；
Step 4, utilizes epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
Step 5, after described epitaxial furnace temperature is reduced to 700 DEG C, stops being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to described epitaxial furnace, the argon that flow is 12-20L/min, makes length have the described processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment；
Step 6, slowly the described epitaxial furnace air pressure of raising is to normal pressure, makes described processing SiC substrate naturally cool to room temperature, takes out SiC epitaxial wafer.
Further, also include after described step 2:
Utilize concentrated sulphuric acid mixed liquor that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing；
Utilize acid mixed solution described processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then use deionized water rinsing.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Further, described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Further, also include after described step 4, at 1400 DEG C, be passed through propane protective gas compared with pure hydrogen etching condition, at 1500 DEG C, be passed through protected silane gas compared with pure hydrogen etching condition.
Present invention lithographic method in situ can etch the original position etching technics of optimal substrate surface topography, promotes SiC heteroepitaxial growth quality.
Accompanying drawing explanation
Fig. 1 is the flow chart of present invention lithographic method in situ.
Detailed description of the invention
Below by drawings and Examples, technical scheme is described in further detail.
Fig. 1 is the flow chart of present invention lithographic method in situ, as it can be seen, the method comprise the steps that
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Preferably, can also include after this step: utilize concentrated sulphuric acid mixed liquor that processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing；Utilize acid mixed solution processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then use deionized water rinsing.
Step 3, utilizes the hydrofluoric acid solution of 5% will process SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing；
Step 4, utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
In the original position etching processing of this step, a kind of preferably utilize epitaxial furnace the processing SiC substrate of zero drift angle to be carried out in situ to etch；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；Etching temperature is can be 1400 DEG C, 1500 DEG C or 1600 DEG C.
Another kind preferably utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Another preferably utilizes epitaxial furnace to carry out the processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Can also include after step 4, at 1400 DEG C, be passed through propane protective gas compared with pure hydrogen etching condition, at 1500 DEG C, be passed through protected silane gas compared with pure hydrogen etching condition.
Step 5, after epitaxial furnace temperature is reduced to 700 DEG C, stops being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to epitaxial furnace, the argon that flow is 12-20L/min, makes length have the processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment；
Step 6, slowly raising epitaxial furnace air pressure is to normal pressure, makes processing SiC substrate naturally cool to room temperature, takes out SiC epitaxial wafer.
Present invention lithographic method in situ can etch the original position etching technics of optimal substrate surface topography, promotes SiC heteroepitaxial growth quality.
Above-described detailed description of the invention; the purpose of the present invention, technical scheme and beneficial effect are further described; it is it should be understood that; the foregoing is only the detailed description of the invention of the present invention; the protection domain being not intended to limit the present invention; all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included within the scope of the present invention.
Claims (6)
1. an original position lithographic method, it is characterised in that described method includes:
Step 1, utilizes ultrasonic being carried out by the processing SiC substrate that the original silicon carbide silicon SiC substrate utilizing positive axis 4H or 6H is processed into；
Step 2, utilizes alkalescence intermixture that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then uses deionized water rinsing；
Step 3, utilize the hydrofluoric acid solution of 5% by described processing SiC substrate dipping bath 10 minutes, then with hot deionized water and cold deionized water rinsing；
Step 4, utilizes epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etches, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min；
Step 5, after described epitaxial furnace temperature is reduced to 700 DEG C, stops being passed through hydrogen, and extracting vacuum is to less than 1 × 10-7mbar；It is passed through, to described epitaxial furnace, the argon that flow is 12-20L/min, makes length have the described processing SiC substrate of silicon carbide epitaxial layers to continue cooling under ar gas environment；
Step 6, slowly the described epitaxial furnace air pressure of raising is to normal pressure, makes described processing SiC substrate naturally cool to room temperature, takes out SiC epitaxial wafer.
Method the most according to claim 1, it is characterised in that also include after described step 2:
Utilize concentrated sulphuric acid mixed liquor that described processing SiC substrate is boiled at a temperature of 85 degree bath 20 minutes, then use deionized water rinsing；
Utilize acid mixed solution described processing SiC substrate to be soaked 20 minutes at a temperature of 85 degree, then use deionized water rinsing.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400 DEG C, 1500 DEG C or 1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5-30min.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1400-1600 DEG C；Pressure is 50-200mbar；Hydrogen flowing quantity is 60-200L/min；Etch period is 5min, 10min or 15min.
Method the most according to claim 1, it is characterised in that described step 4 is particularly as follows: utilize epitaxial furnace to carry out the described processing SiC substrate of zero drift angle in situ and etch, and etching temperature is 1500 DEG C；Pressure is 100mbar；Hydrogen flowing quantity is 82L/min；Etch period is 15min.
Method the most according to claim 1, it is characterised in that also include after described step 4, is passed through propane protective gas at 1400 DEG C compared with pure hydrogen etching condition, is passed through protected silane gas at 1500 DEG C compared with pure hydrogen etching condition.
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| CN201510007373.6A CN105826165A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method |
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| CN201510007373.6A CN105826165A (en) | 2015-01-07 | 2015-01-07 | In-situ etching method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050252525A1 (en) * | 2004-05-12 | 2005-11-17 | United Microelectronics Corp. | Method of cleaning a semiconductor substrate and cleaning recipes |
| US20060252272A1 (en) * | 2003-05-28 | 2006-11-09 | Sakae Koyata | Method of processing silicon wafer |
| JP2007053178A (en) * | 2005-08-17 | 2007-03-01 | Sumco Corp | Method of manufacturing silicon wafer |
| CN103474332A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Etching method for promoting Web Growth |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060252272A1 (en) * | 2003-05-28 | 2006-11-09 | Sakae Koyata | Method of processing silicon wafer |
| US20050252525A1 (en) * | 2004-05-12 | 2005-11-17 | United Microelectronics Corp. | Method of cleaning a semiconductor substrate and cleaning recipes |
| JP2007053178A (en) * | 2005-08-17 | 2007-03-01 | Sumco Corp | Method of manufacturing silicon wafer |
| CN103474332A (en) * | 2013-09-06 | 2013-12-25 | 西安电子科技大学 | Etching method for promoting Web Growth |
| CN103489760A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homoepitaxy carbon silicon double-atomic-layer film method |
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Application publication date: 20160803 |