CN105810666A - 一种具有电磁屏蔽功能的封装结构的制作方法 - Google Patents

一种具有电磁屏蔽功能的封装结构的制作方法 Download PDF

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CN105810666A
CN105810666A CN201610190042.5A CN201610190042A CN105810666A CN 105810666 A CN105810666 A CN 105810666A CN 201610190042 A CN201610190042 A CN 201610190042A CN 105810666 A CN105810666 A CN 105810666A
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substrate
film
electro
encapsulating structure
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王仕勇
包旭升
王孙艳
梁新夫
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Abstract

本发明涉及一种具有电磁屏蔽功能的封装结构的制作方法，所述方法包括以下步骤：步骤一、将芯片通过倒装工艺设置在基板上；步骤二、取一张膜，在芯片上表面进行真空压膜，使得膜覆盖在基板上表面，并与芯片表面和侧面贴合；步骤三、通过光刻显影蚀刻工艺去除屏蔽芯片周围多余的膜；步骤四、将其他芯片或无源器件电性连接至基板上；步骤五、对基板进行包封，植球，最后切割成单品。本发明一种具有电磁屏蔽功能的封装结构的制作方法，它采用一种带有金属镀层的粘性膜直接贴在射频芯片表面或其他需要电磁屏蔽的芯片上，从而达到屏蔽电磁干扰的目的。

Description

一种具有电磁屏蔽功能的封装结构的制作方法
技术领域
本发明涉及一种具有电磁屏蔽功能的封装结构的制作方法，属于半导体封装技术领域。
背景技术
现有的电磁屏蔽结构为：直接在塑封体上通过溅射或电镀的方式，在塑封体表面覆盖金属，起到电磁屏蔽的效果。其主要存在的缺陷如下：
1、在塑封体表面进行溅射或电镀方式，工艺较为复杂，而且成本较为昂贵；
2、镀层金属与塑封体的结合力比较难控制；
3、对多芯片的模组来说，很难实现对局部单芯片的电磁屏蔽。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种具有电磁屏蔽功能的封装结构的制作方法，它采用一种带有金属镀层的粘性膜直接贴在射频芯片表面或其他需要电磁屏蔽的芯片上，从而达到屏蔽电磁干扰的目的。
本发明解决上述问题所采用的技术方案为：一种具有电磁屏蔽功能的封装结构的制作方法，所述方法包括以下步骤：
步骤一、将芯片通过倒装工艺设置在基板上；
步骤二、取一张膜，在芯片上表面进行真空压膜，使得膜覆盖在基板上表面，并与芯片表面和侧面贴合；
步骤三、通过光刻显影蚀刻工艺去除屏蔽芯片周围多余的膜；
步骤四、将其他芯片或无源器件电性连接至基板上；
步骤五、对基板进行包封，植球，最后切割成单品。
所述芯片为普通芯片，所述芯片通过底部填充胶设置于基板上。
所述芯片为表面声波芯片，芯片上表面真空压膜后在芯片与基板之间形成空腔。
所述膜为表面带金属层的粘性膜。
多个芯片倒装于基板上，在多个芯片上表面进行真空压膜
与现有技术相比，本发明的优点在于：
1、采用带金属镀层的膜与芯片粘结，避免了金属镀层与塑封体结合不良的问题；
2、封装过程无需加入传统的电镀工艺和金属溅射工艺，采用贴膜方式，操作方便，简化了工艺流程，极大地降低了加工成本；
3、适用于多芯片模组封装，可以对单个芯片起到电磁屏蔽的效果，能更有效的避免芯片与芯片之间的电磁干扰；
4、适用于表面声波芯片的封装，可以简化工艺步骤，缩小封装体积。
附图说明
图1为本发明一种具有电磁屏蔽功能的封装结构的示意图。
图2为本发明一种具有电磁屏蔽功能的封装结构另一实施例的示意图。
其中：
基板1
金属凸块2
芯片3
膜4
塑封料5
锡球6
底部填充胶7
空腔8。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
如图1所示，本实施例中的一种具有电磁屏蔽功能的封装结构，它包括基板1，所述基板1上通过金属凸块2倒装有芯片3，所述芯片3上方包覆有膜4，所述膜4与芯片3表面和侧面相结合，所述基板1上方包封有塑封料5，所述基板1底部设置有锡球6。
所述芯片3为普通芯片，所述芯片3与基板1之间设置有底部填充胶7。
所述膜4为表面带有金属层的粘性膜。
其制造方法包括如下步骤：
步骤一、将芯片通过倒装工艺设置在基板上；
步骤二、取一张膜，在芯片上表面进行真空压膜，使得膜覆盖在基板上表面，并与芯片表面和侧面贴合；
步骤三、通过光刻显影蚀刻工艺去除屏蔽芯片周围多余的膜；
步骤四、将其他芯片或无源器件电性连接至基板上；
步骤五、对基板进行包封，植球，最后切割成单品。
参见图2，本实施例中的一种具有电磁屏蔽功能的封装结构，所述芯片3为表面声波芯片，芯片3与基板1之间形成空腔8。
所述膜4包覆的芯片可以有多个。
除上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。

Claims (5)

1.一种具有电磁屏蔽功能的封装结构的制作方法，其特征在于所述方法包括以下步骤：
步骤一、将芯片通过倒装工艺设置在基板上；
步骤二、取一张膜，在芯片上表面进行真空压膜，使得膜覆盖在基板上表面，并与芯片表面和侧面贴合；
步骤三、通过光刻显影蚀刻工艺去除屏蔽芯片周围多余的膜；
步骤四、将其他芯片或无源器件电性连接至基板上；
步骤五、对基板进行包封，植球，最后切割成单品。
2.根据权利要求1所述的一种具有电磁屏蔽功能的封装结构的制作方法，其特征在于：所述芯片为普通芯片，所述芯片通过底部填充胶设置于基板上。
3.根据权利要求1所述的一种具有电磁屏蔽功能的封装结构的制作方法，其特征在于：所述芯片为表面声波芯片，芯片上表面真空压膜后在芯片与基板之间形成空腔。
4.根据权利要求1所述的一种具有电磁屏蔽功能的封装结构的制作方法，其特征在于：所述膜为表面带金属层的粘性膜。
5.根据权利要求1所述的一种具有电磁屏蔽功能的封装结构的制作方法，其特征在于：多个芯片倒装于基板上，在多个芯片上表面进行真空压膜。
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Cited By (9)

* Cited by examiner, † Cited by third party
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CN109273418A (zh) * 2018-11-08 2019-01-25 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 一种芯片封装结构及方法
CN110010507A (zh) * 2019-04-04 2019-07-12 中电海康无锡科技有限公司 Sip模块分区电磁屏蔽封装方法
CN110248298A (zh) * 2019-05-13 2019-09-17 苏州捷研芯纳米科技有限公司 硅麦克风及其加工方法
US10643955B2 (en) 2018-06-14 2020-05-05 Universal Scientific Industrial (Shanghai) Co., Ltd. Method of manufacturing SiP module based on double plastic-sealing and the SiP module
CN111642122A (zh) * 2020-05-27 2020-09-08 维沃移动通信有限公司 电磁屏蔽结构及其制造方法
US10798814B2 (en) 2018-06-14 2020-10-06 Universal Scientific Industrial (Shanghai) Co., Ltd. SiP module and manufacturing method of the SiP module
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CN113604184A (zh) * 2021-10-09 2021-11-05 武汉市三选科技有限公司 芯片封装材料、芯片封装结构及封装方法

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