CN105470810B - A kind of macro channel liquid cooling high-power semiconductor laser and device - Google Patents
A kind of macro channel liquid cooling high-power semiconductor laser and device Download PDFInfo
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- CN105470810B CN105470810B CN201510941464.7A CN201510941464A CN105470810B CN 105470810 B CN105470810 B CN 105470810B CN 201510941464 A CN201510941464 A CN 201510941464A CN 105470810 B CN105470810 B CN 105470810B
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- heat sink
- liquid cooling
- substrate
- power semiconductor
- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention proposes that a kind of macro channel liquid cooling high-power semiconductor laser and its multimode combine the device to be formed, structural good using unique heat sink design with chipset in conjunction with, radiating efficiency height.The macro channel liquid cooling high-power semiconductor laser includes heat sink and chipset, each chip of laser of chipset is bonded on the substrate of corresponding thermal conductivity, each chip of laser and its substrate stack gradually and are formed electrical connection, substrate through insulating layer be mounted on it is same it is heat sink on；Along chip of laser and its stacking direction of substrate, the water inlet and water outlet being parallel to each other, the heat sink liquid cooling loop for being internally provided with macro channel are offered in the heat sink side perforation perpendicular to chipset mounting surface.Multiple modules can easily mechanical package, maintenance, realize the resilient expansion of power.And each module really can be tested individually, aging, screening in the operating condition from functional unit, to realize the optimization performance of final products.
Description
Technical field
The present invention relates to a kind of high-power semiconductor laser encapsulating structures.
Background technique
The heat dissipation design of high-power semiconductor laser is one of the core content of encapsulation.Current high power semiconductor swashs
Light device is usually encapsulated by following methods:
A) as shown in Figure 1 and Figure 2, laser bar item is bonded directly on heat sink, heat sink using a kind of knot based on microchannel
Structure is heat sink.This encapsulating structure may be implemented the output of relatively high power by heat sink superposition, but which encapsulation have it is as follows
Disadvantage: firstly, microchannel is easy to be easy to cause blocking because aquaporin is narrow；Second, it is heat sink itself to charge, so must adopt
It is cooled down with deionized water, and has very high requirement for ion concentration；Third, the high-velocity flow in microchannel, will cause
The erosion in channel, leads to product failure；4th, the integral strength and rigidity of micro-channel heat sink lack, and are easy assembling and manufacturing
Bending, deformation occur in the process, to influence the quality of encapsulation.
This encapsulation because the CTE of bar item and heat sink material is mismatched, be typically only capable to the encapsulation of selection slicken solder with reduce because
It is even torn for micro-damage inside caused by thermal stress bars of item, constrains the promotion of laser device reliability.This packing forms
Laser bar item can also be first bonded in the conductive substrates (usually copper tungsten) of CTE match, then be encapsulated on heat sink.It is such
Advantage is hard solder to can be used to be packaged, but increase heat dissipation path, reduces heat-sinking capability.
In addition, there is also a kind of heat sink encapsulation for bar item in macro channel, structure similar to Figure 1 passes through perforation
Water inlet, water outlet play the role of heat dissipation.Its advantage is that channel is larger, it is not likely to produce channel blockage, the flow velocity of liquid also can
It is relatively low, it is possible to reduce the erosion in channel.But this heat-sinking capability for also resulting in macro channel packaging is poor and deposit
In the non-uniform problem of intra passage temperature, heat sink is also electrification.So this encapsulation is only applicable in the lower application of power
Occasion.
B) Patents documents are for example: US5105429, US5311530, US6480514, US6865200, US7016383,
US7944955B2, US7660335B2 etc..A kind of common packing forms are: laser bar item is bonded to the substrate of CTE match
A luminescence unit is formed, multiple luminescence unit parallel combinations are encapsulated on collets, then are encapsulated into the heat in usually macro channel
On heavy.Such packing forms provide convenience because of heat sink and laser luminescence component integral insulation for subsequent application,
Hard solder encapsulation can be used simultaneously, realize that non-deionized water (DIW) freezes.Because of the presence of substrate and collets, the encapsulation
Major defect be bar item heat dissipation path it is long, it is difficult to adapt to the occasion of high power high duty ratio.What is be used cooperatively is macro logical
Road is heat sink can be freezed by water or other modes are freezed.Each product based on this heat sink structure, is difficult to be assembled
Splicing is to realize a bar extension for number.When needing more bar, can only doing various sizes of bottom, heat sink to carry out matching suitable
It answers.
Summary of the invention
The present invention proposes a kind of macro channel liquid cooling high-power semiconductor laser, using unique heat sink design and core
Piece group combines, structural good, and radiating efficiency is high.
Technical scheme is as follows:
A kind of macro channel liquid cooling high-power semiconductor laser, including heat sink and chipset；The each of chipset swashs
On the substrate of corresponding thermal conductivity, each chip of laser and its substrate are stacked gradually and are formed and be electrically connected light device chip bonding
Connect, substrate through insulating layer be mounted on it is same it is heat sink on；Along chip of laser and its stacking direction of substrate, perpendicular to chipset
The heat sink side perforation of mounting surface offers the water inlet and water outlet being parallel to each other, the heat sink liquid cooling for being internally provided with macro channel
Circuit.
On the basis of above scheme, the present invention has also further made following optimization:
Above-mentioned insulating layer has following three kinds of specific structure type:
1, insulating layer is divided into multiple heat conductive insulating blocks, corresponds respectively with each chip of laser and its substrate；
2, insulating layer is a whole heat conductive insulating block, and all substrates are bonded on the collets；
3, insulating layer be heat sink chipset mounting surface (can be and only plated in the installation site of chipset, can also be with
The whole surface in heat sink chipset mounting surface) on the insulating film that plates, substrate bonding is on insulating film.
Above-mentioned water inlet is located at the proximal end of chipset, and water outlet is located at the distal end of chipset.
Above-mentioned heat sink inside has the circulation waterway of Multi-layer separated；For circulation waterway respectively from the water inlet, pile warp is hot
It sinks to the region between chipset and water inlet and flows back into water outlet (parallel with one another between i.e. each layer circulation waterway) again.
Realize the circulation waterway of above-mentioned Multi-layer separated, preferably following two specific structure:
1, heat sink to be made of multiple independent water boards along water inlet, water outlet perforation direction stacking, in each water board
Inside be provided with the circulation waterway being connected to the water inlet, water outlet；
2, heat sink to be integrated, open up the mutually isolated circulation waterway of multilayer in inside, plane where circulation waterway with enter
The mouth of a river, water outlet perforation direction are vertical.
For the heat dissipation uniformity for further increasing chipset mounting surface, adjacent two layers circulation waterway is in water inlet, water outlet
The water flowing interface at place is symmetrical arranged, and keeps the flow direction of adjacent two layers circulation waterway opposite.
For chip of laser-substrate assembling form, one is the corresponding substrates of each chip of laser；There are also one
The structure design of kind optimization: each chip of laser is sandwiched between a pair of of substrate, corresponding two substrates of adjoining laser chip
Direct contact is spaced an individual substrate again.
The preferred diamond-copper alloy of the material of above-mentioned substrate, chip of laser are bonded with substrate by hard solder, described hard
Solder is Jin Xi or gold germanium, the preferred diamond of the material of heat conductive insulating block or ceramics, the preferred aluminium nitride of the material of insulating film or gold
Hard rock.
The present invention also proposes a kind of macro channel liquid cooling high-power semiconductor laser device, using several above-mentioned macro channels
Liquid cooling high-power semiconductor laser is successively directed at assembling along water inlet, water outlet perforation direction, so that all macro channels
The unified water inlet of the heat sink formation of liquid cooling high-power semiconductor laser, water outlet；Adjacent macro channel liquid cooling high power
The water inlet of semiconductor laser module, water outlet position are equipped with sealing ring.In this way, multiple laser modules are in the same of assembling
When, realize the coupled in series of the electricity and water route between module.
Configurability, reliability in view of product, it is proposed that each macro channel liquid cooling high-power semiconductor laser
Chip of laser quantity be 1~10.
The invention has the following advantages that
Macro channel it is heat sink, aquaporin is relatively large, reduces the risk that channel is etched, blocks；Using unique more
Layer parallel circulating waterway structure, significantly improves heat dissipation effect, and can guarantee preferable structural, and rigidity is big, is unlikely to deform,
It is suitble to subsequent assembling.It is heat sink to insulate between bar item group, can be cooling without using deionized water, water quality requirement reduces.
The structure of bar item group realizes the heat dissipation in bar two faces P-N, improves radiating efficiency.It is encapsulated, is fitted using hard solder
Ying Yugeng harsh environment uses, and improves reliability.
Multiple modules can easily mechanical package, maintenance, realize the resilient expansion of power.And each module success certainly
Energy unit, really can individually be tested, aging, screening, in the operating condition to realize the optimization performance of final products.
Use the material of high thermal conductivity as substrate and collets, substrate is copper diamond, and collets are diamond, is realized
Continuous high power output same as microchannel product.
Detailed description of the invention
Fig. 1, Fig. 2 are the structural schematic diagram of traditional scheme；Wherein, Fig. 1 (a) is main view, and Fig. 1 (b) is side view；In figure
Label: 1- radiator (sheet metal)；2- chip of laser；3- negative straps；4- insulating layer；5- water inlet；6- water outlet.
Fig. 3, Fig. 4 are the structural schematic diagram of macro channel liquid cooling high-power semiconductor laser of the invention, wherein Fig. 3
For main view；Fig. 4 is side view.
Fig. 5 is the schematic diagram of the multiple module assembled extensions of the present invention.
Fig. 6 is a kind of heat sink stepped construction (multilayer water board) schematic diagram of the present invention.
Fig. 7 is heat sink another stepped construction (integral piece) schematic diagram of the present invention.
Fig. 8 is the circulation waterway schematic diagram of adjacent two layers water board.
Fig. 9 is the water inlet of perforation and the schematic view of the mounting position of water outlet.
Figure 10 is that (chip of laser is sandwiched in one to another chip of laser-substrate assembling form schematic diagram of the invention
To between substrate).
Figure 11 is the schematic diagram for extending a substrate in the structure basis shown in Figure 10 again.
Specific embodiment
As shown in Figure 3,4, chip of laser 12 be assembled in high heat conductance, CTE match conductive material substrate 11 on, should
Substrate material is the alloy of diamond-copper.The substrate for being equipped with chip of laser passes through the collets 13 of high heat conductance, is assembled into
On heat sink 14, a laser module is formed.Heat sink side perforation offers the water inlet and water outlet being parallel to each other, heat sink interior
Portion is provided with the liquid cooling loop in macro channel.Allow multiple laser modules by " seamless " connection of sealing ring, shares into water
Mouth 15 and water outlet 16 realize extension, as shown in Figure 5.
Heat sink to be specifically made of multilayer water flowing board stacking, flow direction is on the contrary, to realize laser mounting surface between adjacent two layers
Heat dissipation uniformity.The heat sink heat sink cooling path to cooling water planned, ensure that scattered heat availability, uniformly
Property.Heat sink to intake from side, entrance intersects, mutually balanced.It should be noted that in addition to circulation waterway structure shown in Fig. 8, also
The intake-outlet position in adjustable channel, the direction of water flow are also possible to other combinations.
Distinguished with traditional product cooling based on micro-channel heat sink: such as Fig. 9, traditional microchannel encapsulation be by
Chip of laser is installed on 31 faces, and this programme is installed to chip of laser on 30 faces.This is that be different from tradition micro- logical
One of the outstanding feature of road encapsulating products.
To reach higher thermal conductivity, suitable thermal expansion coefficient and conductivity, best group of the diamond-copper alloy
Distribution ratio are as follows: the copper of diamond and corresponding ratio that volume fraction is 40% ± 10%.
Bar item is encapsulated with being bonded for substrate using hard solder: golden tin, gold germanium etc..
Collets use high thermal conductivity material: diamond, thermal conductivity are more than 1000W/m.k.(cvd diamond)
A bar number for each laser module can be 1,2,3 etc..It is recommended that maximum number be not more than 10, to mention
The configurability of high product, reliability.
It is as follows that the present invention assembles the step of macro channel liquid cooling high-power semiconductor laser device:
1) one or more chip of laser and substrate and collets are successively assemblied together compositing chip group, respectively
Electrical coupling is formed between a chip and substrate.Bar item is bonded using hard solder with diamond copper substrate, diamond collets,
Form DOPA item group.
2) DOPA item group is assembled with heat sink, forms an independent laser module.
3) two above step is repeated, multiple laser modules are made.
4) to the performance parameter of each laser module: wavelength, power etc., progress individually tested, aging, screening.
5) the one or more modules met the requirements can pass through sealing ring and machine according to certain order of performance or requirement
Tool fixture is assembled into required products application.
Wherein, about chip-substrate assembling, a chip of laser can also be sandwiched in two substrates as shown in Figure 10
Between, which increases chip spacing, heat dissipation effect is improved, so as to realize high duty ratio, high-power operating mode.
In addition, can also increase extension substrate 110, as shown in figure 11.
Claims (9)
1. a kind of macro channel liquid cooling high-power semiconductor laser, including heat sink and chipset；It is characterized by: chipset
Each chip of laser be bonded on the substrate of corresponding thermal conductivity, each chip of laser and its substrate stack gradually simultaneously
Formed electrical connection, substrate through insulating layer be mounted on it is same it is heat sink on；Along chip of laser and its stacking direction of substrate, vertical
In the heat sink side of chipset mounting surface, perforation offers the water inlet and water outlet being parallel to each other, heat sink to be internally provided with macro lead to
The liquid cooling loop in road；The heat sink inside has the circulation waterway of Multi-layer separated；Circulation waterway respectively from the water inlet, around
Water outlet is flowed back into again through the heat sink region between chipset and water inlet.
2. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that: the insulation
Layer is divided into multiple heat conductive insulating blocks, corresponds respectively with each chip of laser and its substrate；
Alternatively, the insulating layer is a whole heat conductive insulating block, all substrates are bonded on the collets；
Alternatively, the insulating layer is the insulating film plated on heat sink chipset mounting surface, substrate bonding is on insulating film.
3. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that: it is described enter water
Mouth is located at the proximal end of chipset, and water outlet is located at the distal end of chipset.
4. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that:
It is described it is heat sink by multiple independent water boards along water inlet, water outlet perforation direction stacking form, in each water board
Inside is provided with the circulation waterway being connected to the water inlet, water outlet；
Alternatively, it is described it is heat sink be integrated, open up the mutually isolated circulation waterway of multilayer in inside, plane where circulation waterway with
Water inlet, water outlet perforation direction are vertical.
5. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that: adjacent two layers
Circulation waterway is symmetrical arranged in the water flowing interface of water inlet, water outlet, keeps the flow direction of adjacent two layers circulation waterway opposite.
6. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that: each laser
Device chip corresponds to a substrate；
Alternatively, each chip of laser is sandwiched between a pair of of substrate, corresponding two substrates of adjoining laser chip are directly contacted
Or it is spaced an individual substrate again.
7. macro channel liquid cooling high-power semiconductor laser according to claim 1, it is characterised in that: the substrate
Material be diamond-copper alloy, chip of laser is bonded with substrate by hard solder, and the hard solder is Jin Xi or gold germanium；
The material of the heat conductive insulating block is diamond or ceramics, and the material of the insulating layer is aluminium nitride or diamond.
8. a kind of macro channel liquid cooling high-power semiconductor laser device, it is characterised in that: using described in several claims 1
Macro channel liquid cooling high-power semiconductor laser along water inlet, water outlet perforation direction be successively directed at assembling so that institute
Water inlet, the water outlet for having the heat sink formation of macro channel liquid cooling high-power semiconductor laser unified；Adjacent macro channel liquid
The water inlet of cold high-power semiconductor laser, water outlet position are equipped with sealing ring.
9. macro channel liquid cooling high-power semiconductor laser device according to claim 8, it is characterised in that: each macro logical
The chip of laser quantity of road liquid cooling high-power semiconductor laser is 1~10.
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| CN201510941464.7A CN105470810B (en) | 2015-12-15 | 2015-12-15 | A kind of macro channel liquid cooling high-power semiconductor laser and device |
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| CN201510941464.7A CN105470810B (en) | 2015-12-15 | 2015-12-15 | A kind of macro channel liquid cooling high-power semiconductor laser and device |
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| CN105470810A CN105470810A (en) | 2016-04-06 |
| CN105470810B true CN105470810B (en) | 2019-01-08 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106159670A (en) * | 2016-08-30 | 2016-11-23 | 西安炬光科技股份有限公司 | A kind of method improving semiconductor laser radiating efficiency and encapsulating structure |
| CN106785921A (en) * | 2016-12-29 | 2017-05-31 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical erection |
| CN106911058B (en) * | 2017-03-17 | 2020-02-14 | 中国科学院理化技术研究所 | W-shaped runner heat sink |
| CN110783811A (en) * | 2019-10-29 | 2020-02-11 | 深圳市柠檬光子科技有限公司 | High-power module for surface-emitting laser chip |
| CN110752504A (en) * | 2019-11-08 | 2020-02-04 | 西安域视光电科技有限公司 | Laser module and laser assembly |
| CN113097165B (en) * | 2021-03-31 | 2022-05-06 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor stacked array |
| CN113659426B (en) * | 2021-07-19 | 2023-01-06 | 中国科学院西安光学精密机械研究所 | Light source chip array heat radiation structure |
| CN118296970B (en) * | 2024-06-04 | 2024-09-03 | 中国人民解放军海军工程大学 | Cavity structure optimization method and system for embedded liquid cooling heat sink of electronic chip |
| CN118472797B (en) * | 2024-07-10 | 2024-10-18 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7660335B2 (en) * | 2008-04-17 | 2010-02-09 | Lasertel, Inc. | Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials |
| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| CN205265036U (en) * | 2015-12-15 | 2016-05-25 | 西安炬光科技股份有限公司 | Grand passageway liquid cooling high power semiconductor laser module and device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5394426A (en) * | 1992-11-13 | 1995-02-28 | Hughes Aircraft Company | Diode laser bar assembly |
| US5923692A (en) * | 1996-10-24 | 1999-07-13 | Sdl, Inc. | No wire bond plate (NWBP) packaging architecture for two dimensional stacked diode laser arrays |
| US20040120371A1 (en) * | 2000-02-18 | 2004-06-24 | Jds Uniphase Corporation | Contact structure for a semiconductor component |
| US20020110165A1 (en) * | 2001-02-14 | 2002-08-15 | Filgas David M. | Method and system for cooling at least one laser diode with a cooling fluid |
| EP1889342A2 (en) * | 2005-05-13 | 2008-02-20 | Lasag Ag | Stack of laser diodes forming a laser device |
| US8804782B2 (en) * | 2012-10-29 | 2014-08-12 | Coherent, Inc. | Macro-channel water-cooled heat-sink for diode-laser bars |
-
2015
- 2015-12-15 CN CN201510941464.7A patent/CN105470810B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7660335B2 (en) * | 2008-04-17 | 2010-02-09 | Lasertel, Inc. | Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials |
| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| CN205265036U (en) * | 2015-12-15 | 2016-05-25 | 西安炬光科技股份有限公司 | Grand passageway liquid cooling high power semiconductor laser module and device |
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