CN105470810A - Macro-channel liquid-cooling high-power semiconductor laser module and apparatus - Google Patents
Macro-channel liquid-cooling high-power semiconductor laser module and apparatus Download PDFInfo
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- CN105470810A CN105470810A CN201510941464.7A CN201510941464A CN105470810A CN 105470810 A CN105470810 A CN 105470810A CN 201510941464 A CN201510941464 A CN 201510941464A CN 105470810 A CN105470810 A CN 105470810A
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- power semiconductor
- heat sink
- liquid cooling
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- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention proposes a macro-channel liquid-cooling high-power semiconductor laser module and an apparatus formed by combining multiple modules. A unique heat sink design is combined with a chip set, so that the laser module is good in structural property and high in heat dissipation efficiency. The macro-channel liquid-cooling high-power semiconductor laser module comprises a heat sink and the chip set, wherein each laser chip of the chip set is bonded on a corresponding heat-conducting and conductive substrate; the laser chips and the chip substrates are stacked in sequence and form electric connection; the substrates are mounted on the same heat sink through insulation layers; and in the stacking direction of the laser chips and the substrates, a water inlet and a water outlet parallel to each other are formed in the side surfaces of the heat sink perpendicular to a mounting surface of the chip set in a run-through manner, and a liquid cooling loop of a macro-channel is arranged in the heat sink. The multiple modules can be conveniently and mechanically assembled and maintained to realize elastic power extension; and each module serves as a functional unit and can truly perform testing, aging and screening in a working state to realize the optimization performance of a final product.
Description
Technical field
The present invention relates to a kind of high-power semiconductor laser encapsulating structure.
Background technology
The heat dissipation design of high-power semiconductor laser is one of core content of encapsulation.Current high-power semiconductor laser is encapsulated by following several mode usually:
A) as shown in Figure 1 and Figure 2, laser bar bar be bonded directly to heat sink on, a kind of structure heat-sink based on microchannel of heat sink employing.This encapsulating structure can realize the output of relatively high power by heat sink superposition, but which encapsulation has following shortcoming: first, microchannel easily because aquaporin is narrow, easily results in blockage; The second, heat sink own charged, so deionized water must be adopted to cool, and there is very high requirement for ion concentration; 3rd, the high-velocity flow in microchannel, can cause the erosion of passage, cause product failure; 4th, the bulk strength of micro-channel heat sink and rigidity lack, and easily in assembling and manufacture process, bending, distortion occur, thus the quality of impact encapsulation.
This encapsulation, because bar bar does not mate with the CTE of heat sink material, usually can only be selected slicken solder to encapsulate to reduce because the inner micro-damage of bar bar that thermal stress causes even is torn, constrain the lifting of laser device reliability.This packing forms laser bar bar also can first be bonded in CTE coupling conductive substrates (normally copper tungsten) on, then be encapsulated into heat sink on.Such advantage to use hard solder to encapsulate, but but add heat dissipation path, reduces heat-sinking capability.
In addition, also there is a kind of heat sink encapsulation for clinging to bar of grand passage, structure similar to Figure 1, being played the effect of heat radiation by through water inlet, delivery port.Its advantage is that passage is comparatively large, and not easily produce channel blockage, the flow velocity of liquid also can be relatively low, can reduce the erosion of passage.But it is poor and there is the uneven problem of intra passage temperature that this also result in the heat-sinking capability of grand passage packaging, and heat sink is also charged.So this encapsulation is only applicable in the lower application scenario of power.
B) Patents document such as: US5105429, US5311530, US6480514, US6865200, US7016383, US7944955B2, US7660335B2 etc.Common a kind of packing forms is: laser bar bar be bonded to CTE coupling substrate form a luminescence unit, multiple luminescence unit parallel combinations, is encapsulated on collets, then be encapsulated into be generally grand passage heat sink on.Such packing forms, because heat sink with laser luminescence component integral insulation, for follow-up application provides conveniently, can use hard solder encapsulate simultaneously, realize non-deionized water (DIW) and freeze.Because the existence of substrate and collets, the major defect of this encapsulation is that the heat dissipation path of bar bar is long, is difficult to the occasion adapting to high power high duty ratio.With the use of grand passage heat sinkly can be freezed by water or other modes are freezed.Based on each product of this heat sink structure, be difficult to carry out assembling splicing to realize the expansion of bar number object.When the more bar bars of needs, the heat sink coupling of carrying out in bottom can only doing different size adapts to.
Summary of the invention
The present invention proposes a kind of grand passage liquid cooling high-power semiconductor laser, and adopt unique heat sink design to be combined with chipset, structural good, radiating efficiency is high.
Technical scheme of the present invention is as follows:
A kind of grand passage liquid cooling high-power semiconductor laser, comprises heat sink and chipset; Each chip of laser of chipset is bonded on the substrate of corresponding heat-conductivity conducting, and each chip of laser and substrate thereof stack gradually and form electrical connection, substrate through insulating barrier be arranged on same heat sink on; Along the stacking direction of chip of laser and substrate thereof, offering perpendicular to the heat sink side of chipset installed surface is through the water inlet and delivery port that are parallel to each other, heat sink inside is provided with the liquid cooling loop of grand passage.
On the basis of above scheme, the present invention has also done following optimization further:
Above-mentioned insulating barrier has following three kinds of concrete versions:
1, insulating barrier is divided into multiple heat conductive insulating block, respectively with each chip of laser and substrate one_to_one corresponding thereof;
2, the as a whole heat conductive insulating block of insulating barrier, all substrates are all bonded on these collets;
3, insulating barrier is that substrate bonding is on dielectric film at the dielectric film of heat sink chipset installed surface (can be only plate on the installation site of chipset, also can be the whole surface at heat sink chipset installed surface) upper plating.
Above-mentioned water inlet is positioned at the near-end of chipset, and delivery port is positioned at the far-end of chipset.
Above-mentioned heat sink inside has the circulation waterway of Multi-layer separated; Circulation waterway is respectively from described water inlet, and the region that pile warp is heat sink between chipset and water inlet is back to delivery port (namely parallel with one another between each layer circulation waterway) again.
Realize the circulation waterway of above-mentioned Multi-layer separated, preferably following two kinds of concrete structures:
1, heat sink by multiple independently water board along water inlet, the through direction of delivery port is stacked forms, and is provided with the circulation waterway be communicated with described water inlet, delivery port in the inside of each water board;
2, be heat sinkly integrated part, offer the circulation waterway that multilayer is mutually isolated in inside, circulation waterway place plane and water inlet, the through direction of delivery port are vertical.
For improving the heat dissipation uniformity of chipset installed surface further, adjacent two layers circulation waterway is symmetrical arranged at the water flowing interface of water inlet, water outlet, makes the flow direction of adjacent two layers circulation waterway contrary.
For the assembling form of chip of laser-substrate, one is the corresponding substrate of each chip of laser; Also has a kind of structural design of optimization: each chip of laser is sandwiched between a pair substrate, the substrate that two substrates directly contact or one, interval is independent again that adjoining laser chip is corresponding.
The preferred diamond-copper alloy of material of above-mentioned substrate, chip of laser and substrate are by hard solder bonding, and described hard solder is Jin Xi or golden germanium, the preferred diamond of material of heat conductive insulating block or pottery, the preferred aluminium nitride of material of dielectric film or diamond.
The present invention also proposes a kind of grand passage liquid cooling high-power semiconductor laser device, adopt several above-mentioned grand passage liquid cooling high-power semiconductor lasers to aim at assembling successively along water inlet, the through direction of delivery port, make water inlet, delivery port that the heat sink formation of all grand passage liquid cooling high-power semiconductor lasers is unified; Water inlet, the delivery port position of adjacent grand passage liquid cooling high-power semiconductor laser are provided with sealing ring.Like this, multiple laser module, while assembling, realizes the coupled in series in electricity between module and water route.
Consider the configurability of product, reliability, advise that the chip of laser quantity of each grand passage liquid cooling high-power semiconductor laser is 1 ~ 10.
The present invention has the following advantages:
Grand passage heat sink, aquaporin is relatively large, reduces the risk that passage is etched, blocks; Adopt unique Multi-layer Parallel circulation waterway structure, significantly improve radiating effect, and can ensure structural preferably, rigidity is large, not yielding, is applicable to follow-up assembling.Insulate between heat sink and bar bar group, deionized water can not be used cool, water quality requirement reduction.
The structure of bar bar group, realizes the heat radiation in bar bar P-N two faces, improves radiating efficiency.Use hard solder encapsulates, and is adapted to harsher environment and uses, improve reliability.
Multiple module can mechanical package, maintenance easily, realizes the resilient expansion of power.And each module is from functional unit, can really in working order under carry out separately testing, aging, screening, to realize the Optimal performance of final products.
Use the material of high thermal conductivity as substrate and collets, substrate is copper diamond, and collets are diamond, realizes the continuous high power same with microchannel product and exports.
Accompanying drawing explanation
Fig. 1, Fig. 2 are the structural representation of traditional scheme; Wherein, Fig. 1 (a) is front view, and Fig. 1 (b) is end view; Number in the figure: 1-radiator (sheet metal); 2-chip of laser; 3-negative straps; 4-insulating barrier; 5-water inlet; 6-delivery port.
Fig. 3, Fig. 4 are the structural representation of grand passage liquid cooling high-power semiconductor laser of the present invention, and wherein Fig. 3 is front view; Fig. 4 is end view.
Fig. 5 is the schematic diagram of the multiple module assembled expansion of the present invention.
Fig. 6 is heat sink a kind of stepped construction (multilayer water board) schematic diagram of the present invention.
Fig. 7 is heat sink another kind of stepped construction (integral piece) schematic diagram of the present invention.
Fig. 8 is the circulation waterway schematic diagram of adjacent two layers water board.
Fig. 9 is the installation site schematic diagram of through water inlet and delivery port.
Figure 10 is the schematic diagram (chip of laser is sandwiched between a pair substrate) of another kind of chip of laser-substrate assembles form of the present invention.
Figure 11 for expanding the schematic diagram of a substrate again on architecture basics shown in Figure 10.
Embodiment
As shown in Figure 3,4, on the substrate 11 of the electric conducting material that chip of laser 12 is assembled in high heat conductance, CTE mates, this substrate material is the alloy of diamond-copper.The collets 13 of substrate by high heat conductance of chip of laser are installed, are assembled on heat sink 14, form a laser module.Heat sink side is through offers the water inlet and delivery port that are parallel to each other, and heat sink inside is provided with the liquid cooling loop of grand passage.Multiple laser module can be connected by sealing ring " seamless ", share water inlet 15 and delivery port 16, realize expansion, as shown in Figure 5.
Heat sinkly specifically to form by multilayer water board is stacked, flow to contrary between adjacent two layers, to realize the heat dissipation uniformity of laser installed surface.The heat sink heat sink cooling path to cooling water is planned, ensure that loose heat availability, uniformity.Heat sink from side water inlet, entrance intersects, mutually balanced.It should be noted that, except the circulation waterway structure shown in Fig. 8, can also adjust the intake-outlet position of passage, the direction of current also can be other combination.
Distinguish with traditional product cooled based on micro-channel heat sink: as Fig. 9, traditional microchannel encapsulation is installed on 31 by chip of laser, and this programme is installed on 30 by chip of laser.This is one of outstanding feature being different from conventional microchannel encapsulating products.
For reaching higher thermal conductivity, applicable thermal coefficient of expansion and conductivity, the best composition proportioning of this diamond-copper alloy is: volume fraction is the diamond of 40% ± 10% and the copper of corresponding ratio.
The bonding of bar bar and substrate adopts hard solder to encapsulate: golden tin, Jin Zhe etc.
Collets use high thermal conductivity material: diamond, thermal conductivity is more than 1000W/m.k.(cvd diamond)
The bar bar number of each laser module can be 1,2,3 etc.The maximum number of suggestion is not more than 10, to improve configurability, the reliability of product.
The step that the present invention assembles grand passage liquid cooling high-power semiconductor laser device is as follows:
1) one or more chip of laser is assembled into successively with substrate and collets together with compositing chip group, form electrical coupling between each chip and substrate.Bar bar uses hard solder and diamond copper substrate, diamond collets to carry out bonding, forms DOPA bar group.
2) DOPA bar group and heat sinkly to assemble, forms an independently laser module.
3) repeat above two steps, make multiple laser module.
4) to the performance parameter of each laser module: wavelength, power etc., carry out separately testing, aging, screening.
5) the one or more modules met the demands according to certain order of performance or requirement, can be assembled into required products application by sealing ring and mechanical clamp.
Wherein, about chip-substrate assembles, can also as shown in Figure 10, be sandwiched in by a chip of laser between two substrates, this structure increases inter-chip pitch, improves radiating effect, thus can realize high duty ratio, high-power mode of operation.In addition, expansion substrate 110 can also be increased, as shown in figure 11.
Claims (10)
1. a grand passage liquid cooling high-power semiconductor laser, comprises heat sink and chipset; It is characterized in that: each chip of laser of chipset is bonded on the substrate of corresponding heat-conductivity conducting, and each chip of laser and substrate thereof stack gradually and form electrical connection, substrate through insulating barrier be arranged on same heat sink on; Along the stacking direction of chip of laser and substrate thereof, offering perpendicular to the heat sink side of chipset installed surface is through the water inlet and delivery port that are parallel to each other, heat sink inside is provided with the liquid cooling loop of grand passage.
2. grand passage liquid cooling high-power semiconductor laser according to claim 1, is characterized in that: described insulating barrier is divided into multiple heat conductive insulating block, respectively with each chip of laser and substrate one_to_one corresponding thereof;
Or, the as a whole heat conductive insulating block of described insulating barrier, all substrates are all bonded on these collets;
Or described insulating barrier is the dielectric film plated on heat sink chipset installed surface, and substrate bonding is on dielectric film.
3. grand passage liquid cooling high-power semiconductor laser according to claim 1, it is characterized in that: described water inlet is positioned at the near-end of chipset, delivery port is positioned at the far-end of chipset.
4. grand passage liquid cooling high-power semiconductor laser according to claim 1, is characterized in that: described heat sink inside has the circulation waterway of Multi-layer separated; Circulation waterway is respectively from described water inlet, and the region that pile warp is heat sink between chipset and water inlet is back to delivery port again.
5. grand passage liquid cooling high-power semiconductor laser according to claim 4, is characterized in that:
Described heat sink by multiple independently water board along water inlet, the through direction of delivery port is stacked forms, and is provided with the circulation waterway be communicated with described water inlet, delivery port in the inside of each water board;
Or be describedly heat sinkly integrated part, offer the circulation waterway that multilayer is mutually isolated in inside, circulation waterway place plane and water inlet, the through direction of delivery port are vertical.
6. grand passage liquid cooling high-power semiconductor laser according to claim 4, is characterized in that: adjacent two layers circulation waterway is symmetrical arranged at the water flowing interface of water inlet, water outlet, makes the flow direction of adjacent two layers circulation waterway contrary.
7. grand passage liquid cooling high-power semiconductor laser according to claim 1, is characterized in that: the corresponding substrate of each chip of laser;
Or each chip of laser is sandwiched between a pair substrate, the substrate that two substrates directly contact or one, interval is independent again that adjoining laser chip is corresponding.
8. grand passage liquid cooling high-power semiconductor laser according to claim 1, is characterized in that: the material of described substrate is diamond-copper alloy, and chip of laser and substrate are by hard solder bonding, and described hard solder is Jin Xi or golden germanium; The material of described heat conductive insulating block is diamond or pottery, and the material of described dielectric film is aluminium nitride or diamond.
9. a grand passage liquid cooling high-power semiconductor laser device, it is characterized in that: adopt several grand passage liquid cooling high-power semiconductor lasers according to claim 1 to aim at assembling successively along water inlet, the through direction of delivery port, make water inlet, delivery port that the heat sink formation of all grand passage liquid cooling high-power semiconductor lasers is unified; Water inlet, the delivery port position of adjacent grand passage liquid cooling high-power semiconductor laser are provided with sealing ring.
10. grand passage liquid cooling high-power semiconductor laser device according to claim 9, is characterized in that: the chip of laser quantity of each grand passage liquid cooling high-power semiconductor laser is 1 ~ 10.
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| CN105470810B CN105470810B (en) | 2019-01-08 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159670A (en) * | 2016-08-30 | 2016-11-23 | 西安炬光科技股份有限公司 | A kind of method improving semiconductor laser radiating efficiency and encapsulating structure |
| CN106785921A (en) * | 2016-12-29 | 2017-05-31 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical erection |
| CN106911058A (en) * | 2017-03-17 | 2017-06-30 | 中国科学院理化技术研究所 | W-shaped runner heat sink |
| CN110752504A (en) * | 2019-11-08 | 2020-02-04 | 西安域视光电科技有限公司 | Laser module and laser assembly |
| CN110783811A (en) * | 2019-10-29 | 2020-02-11 | 深圳市柠檬光子科技有限公司 | High-power module for surface-emitting laser chip |
| CN113097165A (en) * | 2021-03-31 | 2021-07-09 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor stacked array |
| CN113659426A (en) * | 2021-07-19 | 2021-11-16 | 中国科学院西安光学精密机械研究所 | Light source chip array heat radiation structure |
| CN118296970A (en) * | 2024-06-04 | 2024-07-05 | 中国人民解放军海军工程大学 | Cavity structure optimization method and system for embedded liquid cooling heat sink of electronic chip |
| CN118472797A (en) * | 2024-07-10 | 2024-08-09 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106159670A (en) * | 2016-08-30 | 2016-11-23 | 西安炬光科技股份有限公司 | A kind of method improving semiconductor laser radiating efficiency and encapsulating structure |
| CN106785921A (en) * | 2016-12-29 | 2017-05-31 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical erection |
| CN106911058A (en) * | 2017-03-17 | 2017-06-30 | 中国科学院理化技术研究所 | W-shaped runner heat sink |
| CN110783811A (en) * | 2019-10-29 | 2020-02-11 | 深圳市柠檬光子科技有限公司 | High-power module for surface-emitting laser chip |
| CN110752504A (en) * | 2019-11-08 | 2020-02-04 | 西安域视光电科技有限公司 | Laser module and laser assembly |
| CN113097165A (en) * | 2021-03-31 | 2021-07-09 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor stacked array |
| CN113659426A (en) * | 2021-07-19 | 2021-11-16 | 中国科学院西安光学精密机械研究所 | Light source chip array heat radiation structure |
| CN113659426B (en) * | 2021-07-19 | 2023-01-06 | 中国科学院西安光学精密机械研究所 | Light source chip array heat radiation structure |
| CN118296970A (en) * | 2024-06-04 | 2024-07-05 | 中国人民解放军海军工程大学 | Cavity structure optimization method and system for embedded liquid cooling heat sink of electronic chip |
| CN118296970B (en) * | 2024-06-04 | 2024-09-03 | 中国人民解放军海军工程大学 | Cavity structure optimization method and system for embedded liquid cooling heat sink of electronic chip |
| CN118472797A (en) * | 2024-07-10 | 2024-08-09 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
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