CN105152124A - Method for storing CNTs (Carbon Nanotubes) by using deep silicon etching technology - Google Patents
Method for storing CNTs (Carbon Nanotubes) by using deep silicon etching technology Download PDFInfo
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- CN105152124A CN105152124A CN201510471536.6A CN201510471536A CN105152124A CN 105152124 A CN105152124 A CN 105152124A CN 201510471536 A CN201510471536 A CN 201510471536A CN 105152124 A CN105152124 A CN 105152124A
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Abstract
The invention provides a method for storing CNTs (Carbon Nanotubes) by using a deep silicon etching technology. The method comprises the following steps: performing deep silicon etching on a substrate to form a layer of surface grooves in the substrate to serve as storage spaces; and coating the CNTs in the storage spaces to obtain a layer of uniform-thickness wave-absorbing films. According to the method, the CNTs are stored in the grooves, so that the thicknesses of the CNTs are controllable, and the uniformity is enhanced greatly compared with an ordinary film CNTs manufacturing technology. CNTs powder can be stored in the surface of the substrate for a long time due to thepresence of the grooves. A stealth material manufactured through the deep silicon etching technology is simple in process, convenient to operate, beneficial to energy saving and low in cost, and can be applied to a wide variety of fields such as national defense and military, medical treatment and chemical engineering.
Description
Technical field
The invention belongs to micro-processing technology field, especially a kind of method utilizing dark silicon etching technology to store CNTs.
Background technology
In the manufacturing technology of stealth material, the quality of Material-stealth performance, not only relevant with stealth material self property, also relevant with the stability of film with the thickness of film.CNTs is a kind of very effective stealth material, and the method that the preparation of stealthy CNTs film generally adopts is: be dissolved in organic solvent by CNTs, and then be coated on substrate by colloidal sol, after colloidal sol drying, CNTs is retained on substrate.Here the solubility due to CNTs is not high, and density ratio is lower, and after causing film drying, thickness is quite thin, and thickness distribution is uneven, easily come off, this have impact on its wave-absorbing effect to a great extent, be difficult to obtain excellent Stealth Fighter, say nothing of and promoted the use.
Summary of the invention
For defect of the prior art, the object of this invention is to provide a kind of method utilizing dark silicon etching technology to store CNTs, change and utilize surface coating to cause film uneven in the past, microwave absorption capacity is unstable, and the very fast shortcoming that declines in time.
The present invention is achieved by the following technical solutions:
The invention provides a kind of method utilizing dark silicon etching technology to store CNTs, pass through Micrometer-Nanometer Processing Technology, improve thickness and the uniformity of CNTs film, improve film and substrate in conjunction with effect, there is substrate surface in what guarantee CNTs was stable for a long time, thus improves the stealth effect of its absorbing property and material.Concrete grammar is: by carrying out dark silicon etching to substrate, substrate forms layer of surface groove as memory space, is then coated in memory space by CNTs, obtains the uniform wave absorbing thin film of a layer thickness.
Concrete, the dark silicon etching technology of described utilization stores the method for CNTs, comprises the following steps:
The first step, utilizes dark silicon etching, substrate makes surface groove;
Second step, by CNTs powder coating in the surface groove of substrate, firmly flattens;
3rd step, removes unnecessary CNTs powder, obtains the substrate mixing full CNTs in groove, obtains the uniform wave absorbing thin film of a layer thickness.
Preferably, describedly on substrate, make surface groove, be specially: design and make the mask plate needed for surface groove, utilizing photoetching technique, photoetching is carried out to substrate, the surface groove of the array distribution required for acquisition.
Preferably, in the first step, described surface groove is the rectangular line surface groove of different form ratios, and the degree of depth of each groove is identical, and the width of each groove is different.The shape of surface groove is not limit.
Find after deliberation, the groove that the degree of depth is consistent, its width is less, and the possibility come off is less.In the present invention, the degree of depth of groove is 20-200 μm, and the width of groove is 20-50 μm, after coating CNTs, and the sign obviously do not come off.Also can by being mixed with liquid glue by CNTs, then apply in a groove in addition, treat that the glue solidifies, CNTs be fixedly secured among groove.
Preferably, the thickness of described wave absorbing thin film is 20-200 μm.
Preferably, described substrate is that metal or ceramic material obtain.
More preferably, described substrate is silicon chip.
Compared with prior art, the present invention has following beneficial effect:
(1) the inventive method not only can by regulating the thickness of the degree of depth control CNTs of substrate upper groove; Can also be comparatively stable CNTs is fixed on substrate surface, thus obtain the uniform film of thickness.
(2) surface with CNTs powder that prepared by the inventive method can regard the mixture of CNTs and baseplate material as, this mixture surface film not only can provide certain degree of depth for the storage of CNTs film, can also be comparatively stable fix thin layer, and because the degree of depth is controlled, so as required, certain thickness film can be produced.
(3) compared with existing stealthy film, the inventive method efficiently solve CNTs stealth material in the past make in uneven thickness, thin layer is too thin, and the problem such as easily to come off.
(4) the present invention is simple by the produced stealth material technique of deep silicon technology, and easy to operate, economize energy, cost is lower, can be widely used in national defense and military, the fields such as medical chemical industry.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is conventional substrate surface film build method figure;
Fig. 2 is surface filming design sketch;
Fig. 3 is exposure process figure;
Fig. 4 is dark silicon etching procedure chart;
Fig. 5 is the groove design sketch after etching;
Fig. 6 is surface coating CNTs powder process figure;
Fig. 7 is the design sketch after groove adds powder;
Fig. 8 is embodiment final effect figure.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further described: as shown in figures 1-8.
embodiment 1
The present embodiment relates to a kind of method utilizing dark silicon etching technology to store CNTs, by carrying out dark silicon etching to substrate, substrate being formed the groove that a layer depth is 20 μm, then CNTs is coated in memory space, obtain one deck 20 μm of uniform wave absorbing thin films of thickness, as shown in Figure 2.Specifically comprise the steps:
The first step, designs and produces the mask plate of required groove, applies the photoresist of one deck respective thickness 20-200 μm at substrate surface according to required etching depth, after adding mask plate, and exposure etching, as shown in Figure 3;
Second step, utilize ion reaction etching or other materialization lithographic technique, its effect as shown in Figure 4, etches exposure area, and depth of groove is 20 μm, and the width of groove is 20-50 μm, and obtain the substrate being with groove, its effect is as shown in Figure 5;
3rd step, by CNTs powder coated at substrate surface, CNTs as shown in Figure 6, is pressed in groove by its process as far as possible, and as shown in Figure 7, make required mixed film material, its effect as shown in Figure 8 for its process.
Concrete dimensional parameters in the present embodiment:
Substrate thickness is 450 μm,
Substrate diameter is 2.54cm,
Recess width is 50 μm,
Depth of groove is 20 μm,
Flute pitch is 20 μm.
As shown in Figure 7, be the schematic diagram of the present embodiment.
embodiment 2
The present embodiment relates to a kind of method utilizing dark silicon etching technology to store CNTs, by carrying out dark silicon etching to substrate, substrate being formed the groove that a layer depth is 200 μm, then CNTs is coated in memory space, obtain one deck 200 μm of uniform wave absorbing thin films of thickness, as shown in Figure 2.Specifically comprise the steps:
The first step, designs and produces the mask plate of required groove, applies the photoresist of one deck respective thickness 20-200 μm at substrate surface according to required etching depth, after adding mask plate, and exposure etching, as shown in Figure 3;
Second step, utilize ion reaction etching or other materialization lithographic technique, its effect as shown in Figure 4, etches exposure area, and depth of groove is 200 μm, and the width of groove is 20-50 μm, and obtain the substrate being with groove, its effect is as shown in Figure 5;
3rd step, by CNTs powder coated at substrate surface, CNTs as shown in Figure 6, is pressed in groove by its process as far as possible, and as shown in Figure 7, make required mixed film material, its effect as shown in Figure 8 for its process.
Concrete dimensional parameters in the present embodiment:
Substrate thickness is 450 μm,
Substrate diameter is 2.54cm,
Recess width is 50 μm,
Depth of groove is 200 μm,
Flute pitch is 20 μm.
As shown in Figure 7, be the schematic diagram of the present embodiment.
embodiment 3
The present embodiment relates to a kind of method utilizing dark silicon etching technology to store CNTs, by carrying out dark silicon etching to substrate, substrate being formed the groove that a layer depth is 100 μm, then CNTs is coated in memory space, obtain one deck 100 μm of uniform wave absorbing thin films of thickness, as shown in Figure 2.Specifically comprise the steps:
The first step, designs and produces the mask plate of required groove, applies the photoresist of one deck respective thickness 20-200 μm at substrate surface according to required etching depth, after adding mask plate, and exposure etching, as shown in Figure 3;
Second step, utilize ion reaction etching or other materialization lithographic technique, its effect as shown in Figure 4, etches exposure area, and depth of groove is 100 μm, and the width of groove is 50 μm, and obtain the substrate being with groove, its effect is as shown in Figure 5;
3rd step, by CNTs powder coated at substrate surface, CNTs as shown in Figure 6, is pressed in groove by its process as far as possible, and as shown in Figure 7, make required mixed film material, its effect as shown in Figure 8 for its process.
Or also can by being mixed with liquid glue by CNTs, then apply in a groove, treat that the glue solidifies, CNTs be fixedly secured among groove.
Concrete dimensional parameters in the present embodiment:
Substrate thickness is 450 μm,
Substrate diameter is 2.54cm,
Recess width is 50 μm,
Depth of groove is 100 μm,
Flute pitch is 20 μm.
In sum: can show that the surface with CNTs powder prepared by the inventive method can regard the mixture of CNTs and baseplate material as by embodiment 1-3, this mixture surface film not only can provide certain degree of depth for the storage of CNTs film, can also be comparatively stable fix thin layer, and because the degree of depth is controlled, so as required, certain thickness film can be produced.The inventive method efficiently solve CNTs stealth material in the past make in uneven thickness, thin layer is too thin, and the problem such as easily to come off.Present invention process is simple simultaneously, and easy to operate, economize energy, cost is lower, can be widely used in national defense and military, the fields such as medical chemical industry.Can also be applied in addition on many materials, such as: glass, pottery etc.; Its application just constantly embodies in many aspects, has good prospect.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (9)
1. the method utilizing dark silicon etching technology to store CNTs, it is characterized in that, by carrying out dark silicon etching to substrate, substrate forming layer of surface groove as memory space, then CNTs is coated in memory space, obtains the uniform wave absorbing thin film of a layer thickness.
2. the dark silicon etching technology of utilization according to claim 1 stores the method for CNTs, and it is characterized in that, described method, comprises the following steps:
The first step, utilizes dark silicon etching, substrate makes surface groove;
Second step, by CNTs powder coating in the surface groove of substrate, firmly flattens;
3rd step, removes unnecessary CNTs powder, obtains the substrate mixing full CNTs in groove, obtains the uniform wave absorbing thin film of a layer thickness.
3. the dark silicon etching technology of utilization according to claim 2 stores the method for CNTs, it is characterized in that, describedly on substrate, make surface groove, be specially: design and make the mask plate needed for surface groove, utilize photoetching technique, photoetching is carried out to substrate, the surface groove of the array distribution required for acquisition.
4. the dark silicon etching technology of utilization according to claim 2 stores the method for CNTs, and it is characterized in that, described surface groove is the rectangular line surface groove of different form ratios, and the degree of depth of each groove is identical, and the width of each groove is different.
5. the dark silicon etching technology of utilization according to claim 4 stores the method for CNTs, and it is characterized in that, the degree of depth of described groove is 20-200 μm, and the width of groove is 20-50 μm.
6. the dark silicon etching technology of the utilization according to any one of claim 1-5 stores the method for CNTs, and it is characterized in that, by being mixed with liquid glue by CNTs, then apply in a groove, treat that the glue solidifies, CNTs is fixedly secured among groove.
7. the dark silicon etching technology of the utilization according to any one of claim 1-5 stores the method for CNTs, and it is characterized in that, the thickness of described wave absorbing thin film is 20-200 μm.
8. the dark silicon etching technology of the utilization according to any one of claim 1-5 stores the method for CNTs, it is characterized in that, described substrate is that metal or ceramic material obtain.
9. the dark silicon etching technology of utilization according to claim 8 stores the method for CNTs, and it is characterized in that, described substrate is silicon chip.
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Application publication date: 20151216 |