CN104935257A - Silica-based frequency multiplier of double-clamped beam movable gate with low leakage current - Google Patents
Silica-based frequency multiplier of double-clamped beam movable gate with low leakage current Download PDFInfo
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- CN104935257A CN104935257A CN201510386965.3A CN201510386965A CN104935257A CN 104935257 A CN104935257 A CN 104935257A CN 201510386965 A CN201510386965 A CN 201510386965A CN 104935257 A CN104935257 A CN 104935257A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphonium ion Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a silica-based MOSFET frequency multiplier of a double-clamped beam movable gate with low leakage current. The frequency multiplier is composed of a silicon substrate, N type enhancement mode MOSFET, a circumscribed low-pass filter, a voltage-controlled oscillator, a divider and a high-frequency choke coil. The gate of the MOSFET is two clamped beams which are suspended in a gate oxide, and a pull-down voltage is designed as threshold voltage of MOSFET, and controlled by direct current bias. A reference signal and a feedback signal are loaded two clamped beam movable gates. When the two clamped beam movable gates are suspended and not contacted with the gate oxide, the MOSFET is cut off to reduce the leakage current of the gates. When the two clamped beam movable gates are pulled down and contacted with the gate oxide, the MOSFET is conducted, and the reference signal and feedback signal are input in the MOSFET to multiply, and an external circuit is used for outputting a frequency multiplying signal of a reference frequency finally. In addition, the frequency multiplier of the invention could be used for amplifying single gating signal to enable the circuit have multifunction after one clamped beam movable gate is pulled down. The frequency multiplier of the invention could reduce leakage current and realize multifunction with smaller volume.
Description
Technical field
The present invention proposes the two movable gate MOSFET of clamped beam (mos field effect transistor) frequency multiplier of silica-based low-leakage current, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is by the effect of the frequency of a reference signal through functional circuit, produces reference frequency N frequency signal doubly.At present, frequency multiplier is widely used in the fields such as communication, signal transacting.There is complex structure, larger-size shortcoming in tradition frequency multiplier.The more important thing is, in circuit, the existence of MOSFET element grid leakage current increases the power consumption of circuit.
By contrast, MEMS technology has the advantages such as volume is little, low in energy consumption, cheap, and in addition, the development of MEMS fixed beam structure is also increasingly mature.Object of the present invention will propose the two movable gate MOSFET frequency multiplier of clamped beam of a kind of silica-based low-leakage current just.
Summary of the invention
Technical problem: the MOSFET structure in traditional circuit, even if also usually can produce certain grid leakage current in cut-off state, increases circuit power consumption.Along with the development of microelectric technique, gate oxide thickness along with reducing of MOSFET size thinning further, exacerbate the generation of leakage current.The object of this invention is to provide the two movable gate MOSFET frequency multiplier of clamped beam of a kind of silica-based low-leakage current.Make circuit reduce power consumption, structure is simple, smaller volume.
Technical scheme: the two clamped beam of a kind of silica-based low-leakage current of the present invention can the MOSFET of moving grid frequency multiplier be growth N-type enhancement mode MOSFET on a silicon substrate, comprises source electrode, drain electrode, gate oxide, anchor district, cantilever beam can moving grid, drop-down pole plate, insulating barrier, through hole, lead-in wire, source ground;
The grid of MOSFET be suspended in two clamped beams on gate oxide can moving grid, anchor district is arranged on gate oxide both sides, clamped beam can be fixed in anchor district by moving grid, clamped beam can the centre of moving grid be suspended on gate oxide, drop-down pole plate on silicon substrate is between anchor district and gate oxide, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate, direct current biasing acts on clamped beam by high frequency choke coil and anchor district can on moving grid, and clamped beam the actuation voltage of moving grid can be designed to the threshold voltage of MOSFET; Lead-in wire connects source electrode respectively by through hole, drain electrode;
Drain electrode output has two kinds of different working methods, one is through the first port input low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the 3rd port access divider, the output of divider is loaded on a clamped beam as feedback signal by anchor district can on moving grid, reference signal is loaded into another clamped beam by anchor district can on moving grid, and the another kind of working method that drain electrode exports directly exports amplifying signal through the second port.
The clamped beam of this frequency multiplier can moving grid drop-down or suspend be controlled by direct current biasing, when two clamped beams can all realize drop-down by moving grid under the direct current biasing reaching or surpassing actuation voltage, when contacting with gate oxide, MOSFET conducting, reference signal realizes being multiplied by MOSFET with feedback signal, drain electrode output packet is containing the phase information of two signals, select the first port input low pass filter, low pass filter filtering HFS, output packet is containing the direct voltage of phase information, direct voltage input voltage controlled oscillator, the output frequency of voltage controlled oscillator is regulated as control voltage, signal after regulating frequency through the 3rd port transmission to divider, divider output signal is loaded into clamped beam as feedback signal can on moving grid, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator the 4th port output frequency f
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal,
When direct current biasing is less than actuation voltage, two clamped beams can moving grid be all not drop-down is in suspended state, and when not contacting with gate oxide, MOSFET ends, and gate capacitance is less, effectively can reduce leakage current, reduces power consumption;
When only have a clamped beam can moving grid drop-down, another clamped beam can moving grid when being in suspended state, drop-down clamped beam can form raceway groove below moving grid, can do not formed high resistance area below moving grid by drop-down clamped beam, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving MOSFET, only have and can the gating signal on moving grid can be amplified by MOSFET by drop-down clamped beam, amplifying signal selects port to export, when only have load reference signal clamped beam can moving grid drop-down time, reference signal is amplified by MOSFET, second port exports reference signal frequency f
refamplifying signal, when only have load feedback signal clamped beam can moving grid drop-down time, feedback signal is amplified by MOSFET, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port output frequency is f
othe amplifying signal of/N.
Beneficial effect: the two clamped beam movable gate MOSFET frequency multiplier of silica-based low-leakage current of the present invention has following significant advantage:
1, adopt clamped beam as grid, realize the disengaging of grid and gate oxide in MOSFET cut-off state, there is reduction circuit leakage current, reduce the advantage of power consumption;
2, drop-down single clamped beam can realize, to the amplification of single gating signal, making Multifunctional circuit by moving grid, and expand its range of application, another can not formed high resistance area below moving grid by drop-down clamped beam, is conducive to improving MOSFET reverse breakdown voltage;
3, adopt MEMS technology, circuit structure is simplified, volume is miniaturized.
Accompanying drawing explanation
Fig. 1 is the vertical view of the two movable gate MOSFET frequency multiplier of clamped beam of silica-based low-leakage current of the present invention.
Fig. 2 is that the A-A ' of the two movable gate MOSFET frequency multiplier of clamped beam of the silica-based low-leakage current of Fig. 1 is to profile.
Fig. 3 is that the B-B ' of the two movable gate MOSFET frequency multiplier of clamped beam of the silica-based low-leakage current of Fig. 1 is to profile.
Fig. 4 be the silica-based clamped beam of Fig. 1 can moving grid low-leakage current MOSFET two clamped beams can moving grid all drop-down time raceway groove schematic diagram.
Fig. 5 be the silica-based clamped beam of Fig. 1 can the single clamped beam of moving grid low-leakage current MOSFET can moving grid drop-down time raceway groove schematic diagram.
Have in figure: silicon substrate 1, source electrode 2, drain electrode 3, gate oxide 4, anchor district 5, clamped beam can moving grid 6, pull-down electrode 7, insulating barrier 8, through hole 9, lead-in wire the 10, first port 11, second port one the 2, three port one the 3, four port one 4.
Embodiment
The two movable gate MOSFET frequency multiplier of clamped beam of silica-based low-leakage current of the present invention.Comprise silicon substrate, N-type enhancement mode MOSFET, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil, wherein MOSFET growth on a silicon substrate, comprises source electrode, drain electrode, gate oxide, two clamped beams can moving grid, anchor district, pull-down electrode, insulating barrier.The grid of MOSFET is across two that are suspended on gate oxide discrete clamped beams, gate oxide is connected between source and drain, anchor district is arranged on gate oxide both sides, clamped beam can pass through respective anchor district across on gate oxide by moving grid, pull-down electrode is arranged between gate oxide and anchor district, pull-down electrode ground connection, insulating barrier covers on pull-down electrode.
Reference signal and feedback signal are carried in two clamped beams respectively can on moving grid, and direct current biasing acts on clamped beam by high frequency choke coil and anchor district can on moving grid.
Clamped beam the actuation voltage of moving grid can be designed to the threshold voltage of MOSFET.When direct current biasing is less than actuation voltage, two clamped beams can moving grid when being all suspended on gate oxide, and MOSFET ends, and because grid contact with gate oxide, gate capacitance is less, effectively can reduce grid leakage current, reduction power consumption.
When two clamped beams can moving grid all drop-down by the direct current biasing reaching or surpassing actuation voltage, when contacting with gate oxide, MOSFET conducting, reference signal is multiplied by MOSFET with feedback signal.Drain electrode outputs signal the phase information contained between reference signal and feedback signal.Low pass filter by the high fdrequency component filtering in this signal, and carries a direct-current control voltage to voltage controlled oscillator, regulates voltage controlled oscillator output frequency.Voltage controlled oscillator output signal is after divider, and in frequency, the change of 1/N occurs correspondence, and as feedback signal, re-enters MOSFET, and through the effect of cycle of phase-locked loop, feedback signal and reference signal reach the consistent lock-out state of frequency.The signal frequency that final voltage controlled oscillator exports is N times of reference frequency, realizes the frequency multiplication to reference signal.
When only have a clamped beam can moving grid by drop-down time, this clamped beam can form raceway groove below moving grid, and another can be not high resistance area below moving grid by drop-down clamped beam, and the structure of raceway groove and high resistance area series connection effectively can improve the reverse breakdown voltage of MOSFET.Only have and select drop-down clamped beam the gating signal on moving grid can be amplified by MOSFET and export, thus by can the independent control of moving grid to a clamped beam, realize the frequency processing to individual signals, expand the range of application of circuit.
MOSFET 3 output areas that drain are divided into two kinds of working methods, one accesses low pass filter by the first port 11, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports and accesses divider through the 3rd port one 3, divider export be loaded into a clamped beam as feedback signal by anchor district 5 can on moving grid 6, reference signal is loaded into another clamped beam by anchor district 5 can on moving grid 6.The another kind of working method that MOSFET drain electrode 3 exports is that selection second port one 2 directly exports amplifying signal.
Direct current biasing acts on clamped beam by high frequency choke coil and anchor district 5 can on moving grid 6, and high frequency choke coil plays the effect that alternating current-direct current separates.Clamped beam the actuation voltage of moving grid 6 can be set to the threshold voltage of MOSFET.When direct current biasing is less than actuation voltage, two clamped beams can all suspend when not contacting with gate oxide by moving grid 6, and MOSFET ends, and gate capacitance is less compared to traditional MOSFET, effectively can reduce leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, two clamped beams can moving grid 6 be all drop-down when contacting with gate oxide 4, raceway groove is formed, as shown in Figure 4, MOSFET conducting, reference signal realizes being multiplied by MOSFET with feedback signal, 3 output packets that drain contain the phase information between two signals, port 11 is selected to be transferred to low pass filter, low pass filter is by the high fdrequency component filtering in this signal, and carry a direct voltage comprising phase information to voltage controlled oscillator, direct voltage can adopt following formula to represent:
Wherein K is MOSFET gain coefficient, f
reffor reference signal frequency, f
backfor feedback frequency signal, φ is that proper phase is poor.Voltage controlled oscillator under the control of direct voltage, the size of regulation output signal frequency.Voltage controlled oscillator output frequency can be expressed by following differential representation formula:
Wherein, f
ofor voltage controlled oscillator output frequency, K
vfor voltage controlled oscillator sensitivity.After divider, output frequency becomes the 1/N of voltage controlled oscillator output frequency, and as feedback signal, re-enters MOSFET.Namely:
Through the feedback ringing of loop, the frequency final sum reference signal of feedback signal is consistent.That is:
So the signal frequency that final voltage controlled oscillator port one 4 exports is N times of reference frequency, realizes the frequency multiplication of reference signal.
Only have a clamped beam can moving grid 6 drop-down, another clamped beam can moving grid 6 when being in suspended state, drop-down clamped beam can form raceway groove below moving grid 6, can be not high resistance area below moving grid 6 by drop-down clamped beam, as shown in Figure 5, raceway groove is connected with high resistance area, is conducive to improving MOSFET reverse breakdown voltage.Only have drop-down clamped beam the gating signal on moving grid 6 can be amplified by MOSFET, amplifying signal selects port 12 to export.When only have load reference signal clamped beam can moving grid 6 drop-down time, reference signal is amplified by MOSFET, and port one 2 exports reference frequency f
refamplifying signal.When only have load feedback signal clamped beam can moving grid 6 drop-down time, feedback frequency signal is pressuring controlling oscillator frequency f
oresult after divider, i.e. f
o/ N, port one 2 output frequency is f
othe amplifying signal of/N.Thus by can the independent control of moving grid 6 to a clamped beam, realize the amplification to individual signals, circuit has multi-functional, expands the range of application of circuit.
The preparation method of the frequency multiplier based on the movable gate MOSFET of clamped beam of the present invention is as follows:
1) P type Si substrate is prepared;
2) end oxide growth
3) deposited silicon nitride;
4) photoetching, etch silicon nitride form MOSFET source and drain electrode;
5) field oxidation;
6) silicon nitride and basal oxygen sheet is removed;
7) carry out gate oxidation, adjusting threshold voltage, make MOSFET be enhancement mode;
8) deposit spathic silicon, and photoetching, retain the polysilicon of the anchor zone position of clamped beam;
9) plating evaporation growth Al;
10) apply photoresist, retain the photoresist above pulling electrode;
11) anti-carve Al, form pull-down electrode;
12) deposition insulating layer, the Si that epitaxial growth is 0.1 μm
xn
1-xinsulating barrier;
13) photoetching window, etches away unnecessary Si
xn
1-x:
14) apply photoresist, retain the insulating barrier of pulling electrode;
15) utilize reactive ion etching, form the silicon nitride medium layer in pull-down electrode;
16) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retaining clamped beam can sacrifice layer below moving grid;
17) plating evaporation growth Al;
18) apply photoresist, retain the photoresist above clamped beam;
19) anti-carve Al, forming clamped beam can moving grid;
20) apply photoresist, photoetching hand-hole, inject N+ phosphonium ion, form MOSFET source and drain electrode;
21) make through hole and lead-in wire, coating photoresist, removes the photoresist of source-drain electrode contact zone, vacuum evaporation gold germanium nickel/gold, peels off, and alloying forms ohmic contact;
22) discharge PMGI sacrifice layer, form the clamped beam suspended;
23) MOSFET of preparation is connected with external circuit, forms frequency multiplier.
Whether distinguish is that the standard of this structure is as follows:
The two movable gate MOSFET frequency multiplier of clamped beam of silica-based low-leakage current of the present invention adopts two clamped beams as the grid of MOSFET, and respectively as the input of reference signal and feedback signal.Clamped beam can be controlled by direct current biasing by moving grid, and actuation voltage is designed to the threshold voltage of MOSFET, when two clamped beams can moving grid do not have drop-down be all suspended on gate oxide time, MOSFET end, can grid leakage current be reduced, reduce power consumption.When two clamped beams can moving grid is all drop-down contact with gate oxide time, reference signal is multiplied by MOSFET with feedback signal, drain electrode output packet, containing phase information, through low pass filter, obtains reference signal frequency N frequency-doubled signal doubly after the circulation of voltage controlled oscillator, divider feedback.In addition, two clamped beams can control separately by moving grid, and drop-down clamped beam can form raceway groove below moving grid, another can not formed high resistance area below moving grid by drop-down clamped beam, be conducive to increasing reverse breakdown voltage, and realize the amplification to single gating signal, the multifunctionality of realizing circuit.
Claims (2)
1. the two clamped beam of a silica-based low-leakage current can moving grid frequency multiplier, it is characterized in that the MOSFET of this frequency multiplier is the N-type enhancement mode MOSFET of growth on silicon substrate (1), comprise source electrode (2), drain electrode (3), gate oxide (4), anchor district (5), cantilever beam can moving grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead-in wire (10), source electrode (2) ground connection;
The grid of MOSFET be suspended in two clamped beams on gate oxide (4) can moving grid (6), anchor district (5) is arranged on gate oxide (4) both sides, clamped beam can be fixed in anchor district (5) by moving grid (6), clamped beam can the centre of moving grid (6) be suspended on gate oxide (4), the drop-down pole plate (7) be positioned on silicon substrate (1) is positioned between anchor district (5) and gate oxide (4), drop-down pole plate (7) ground connection, insulating barrier (8) covers on drop-down pole plate (7), direct current biasing acts on clamped beam by high frequency choke coil and anchor district (5) can on moving grid (6), clamped beam the actuation voltage of moving grid (6) can be designed to the threshold voltage of MOSFET, lead-in wire (10) connects source electrode (2) respectively by through hole (9), drain electrode (3),
Drain electrode (3) output has two kinds of different working methods, one is through the first port (11) input low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the 3rd port (13) access divider, the output of divider is loaded on a clamped beam as feedback signal by anchor district (5) can on moving grid (6), reference signal is loaded into another clamped beam by anchor district (5) can on moving grid (6), the another kind of working method that drain electrode (3) exports directly exports amplifying signal through the second port (12).
2. the two clamped beam of the silica-based low-leakage current of one according to claim 1 can moving grid frequency multiplier, it is characterized in that the clamped beam of this frequency multiplier can moving grid (6) drop-down or suspend be controlled by direct current biasing, when two clamped beams can all realize drop-down by moving grid (6) under the direct current biasing reaching or surpassing actuation voltage, when contacting with gate oxide (4), MOSFET conducting, reference signal realizes being multiplied by MOSFET with feedback signal, drain electrode (3) output packet is containing the phase information of two signals, the first port (11) is selected to input low pass filter, low pass filter filtering HFS, output packet is containing the direct voltage of phase information, direct voltage input voltage controlled oscillator, the output frequency of voltage controlled oscillator is regulated as control voltage, signal after regulating frequency transfers to divider through the 3rd port (13), divider output signal is loaded into clamped beam as feedback signal can on moving grid (6), the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator the 4th port (14) output frequency f
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal,
When direct current biasing is less than actuation voltage, two clamped beams can moving grid (6) be all not drop-down is in suspended state, and when not contacting with gate oxide (4), MOSFET ends, and gate capacitance is less, effectively can reduce leakage current, reduces power consumption;
When only have a clamped beam can moving grid (6) drop-down, another clamped beam can moving grid (6) when being in suspended state, drop-down clamped beam can form raceway groove in moving grid (6) below, can do not formed high resistance area in moving grid (6) below by drop-down clamped beam, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving MOSFET, only have and can the gating signal on moving grid (6) can be amplified by MOSFET by drop-down clamped beam, amplifying signal selects port (12) to export, when only have load reference signal clamped beam can moving grid (6) drop-down time, reference signal is amplified by MOSFET, second port (12) exports reference signal frequency f
refamplifying signal, when only have load feedback signal clamped beam can moving grid (6) drop-down time, feedback signal is amplified by MOSFET, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port (12) output frequency is f
othe amplifying signal of/N.
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| CN201510386965.3A CN104935257B (en) | 2015-07-01 | 2015-07-03 | The double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier |
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Cited By (1)
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| CN106059500A (en) * | 2016-06-06 | 2016-10-26 | 东南大学 | Frequency multiplier based on MEMS (Micro Electro Mechanical Systems) broadband phase detector and temperature compensation resistor |
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| CN106059500A (en) * | 2016-06-06 | 2016-10-26 | 东南大学 | Frequency multiplier based on MEMS (Micro Electro Mechanical Systems) broadband phase detector and temperature compensation resistor |
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| CN104935257B (en) | 2017-09-29 |
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