CN104935256A - Gallium arsenide base low leakage current double-fixed beam switch double-gate frequency multiplier - Google Patents
Gallium arsenide base low leakage current double-fixed beam switch double-gate frequency multiplier Download PDFInfo
- Publication number
- CN104935256A CN104935256A CN201510379436.0A CN201510379436A CN104935256A CN 104935256 A CN104935256 A CN 104935256A CN 201510379436 A CN201510379436 A CN 201510379436A CN 104935256 A CN104935256 A CN 104935256A
- Authority
- CN
- China
- Prior art keywords
- clamped beam
- hemt
- beam switch
- signal
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 44
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000011068 loading method Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 230000001143 conditioned effect Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000010931 gold Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention relates to a GaAs base low leakage current double-fixed beam switch double-gate high electron mobility transistor (HEMT) frequency multiplier, comprising a GaAs substrate, a reinforced HEMT, an external low pass filter, a voltage controlled oscillator, a divider and a high frequency choke coil. Two fixed beam switches are suspended on two gates and are used as inputs of a reference signal and a feedback signal. A fixed beam switch pull-down voltage is designed as an HEMT threshold voltage, and is used for controlling breakover of the HEMT under direct current bias. When the two fixed beam switches are off, the gate voltage is zero, a channel is not available, and the MEMT is cut off, thereby being beneficial for reducing leakage current of the gate. When the two fixed beam switches are pulled down to close and contact with the gate, a two-dimensional electron gas channel is formed, the HEMT is connected, the reference signal and the feedback signal are amplified through the HEMT, drain output is fed back through the low pass filter, voltage controlled oscillator and divider and cycles, and then a frequency multiplication signal is obtained. When only one fixed beam switch is on, a gating signal can be amplified separately. The circuit has multiple functions.
Description
Technical field
The present invention proposes two clamped beam switch double grid HEMT (High Electron Mobility Transistor) frequency multiplier of GaAs (GaAs) base low-leakage current, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is the one of frequency synthesizer, and it by the effect of a reference signal through functional circuit, can produce the target frequency signal of reference signal frequency integral multiple.Phase-locked loop and divider is utilized to form frequency multiplier.Frequency multiplier has become the important part of in electronic technology, space technology and the communication technology one.But compared with the MOSFET structure in traditional frequency multiplier circuit, high electron mobility transistor (HEMT) demonstrates more advantage, such as higher electron mobility, speed is faster, and efficiency is higher, also can reduce power consumption etc.In addition, MEMS beam structure facilitates controlled, also promotes circuit simple to structure, the future development of smaller volume.
The present invention formally in conjunction with HEMT-structure and MEMS technology, will propose the two clamped beam switch double grid HEMT frequency multiplier of a kind of GaAs base low-leakage current.
Summary of the invention
Technical problem: the object of this invention is to provide the two clamped beam switch double grid HEMT frequency multiplier of a kind of GaAs base low-leakage current, two grids are positioned at immediately below two clamped beam switches, reference signal and reference signal are carried on two clamped beam switches respectively, the conducting of clamped beam switch control HEMT in circuit, by to the control of two clamped beam switches and the effect of external circuits, realize the computing to reference signal frequency, obtain target frequency.
Technical scheme: the HEMT of the two clamped beam switch double grid frequency multiplier of GaAs based low-leakage current of the present invention is growth enhancement mode HEMT on gaas substrates, comprises intrinsic GaAs layer, intrinsic AlGaAs layer, N+AlGaAs layer, source electrode, drain electrode, grid, anchor district, clamped beam switch, drop-down pole plate, insulating barrier, through hole, lead-in wire, there is intrinsic GaAs layer on gaas substrates, intrinsic GaAs layer there is intrinsic AlGaAs layer, intrinsic AlGaAs layer there is N+AlGaAs layer, source electrode, drain electrode is positioned at the both sides of two clamped beam switches, source ground, two grids are set up in parallel, with two clamped beam switch one_to_one corresponding, the two ends of clamped beam switch are fixed in anchor district, the middle part of clamped beam switch is suspended on grid, drop-down pole plate is arranged between anchor district and grid, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate, direct current biasing acts on clamped beam switch by high frequency choke coil and anchor district, the actuation voltage of clamped beam switch is designed to the threshold voltage of HEMT, lead-in wire connects intrinsic GaAs layer respectively by through hole,
HEMT drain electrode output signal has two kinds of different working methods, one is that selection first port inputs to low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the 3rd port access divider, divider output signal is loaded on a clamped beam switch as feedback signal by anchor district, form feedback loop, reference signal is loaded on another clamped beam switch by anchor district, and the another kind of working method of HEMT drain electrode output signal is that selection second port directly exports amplifying signal.
Closed or the disconnection of clamped beam switch is controlled by direct current biasing, when two clamped beam switches all realize drop-down under the direct current biasing reaching or surpassing actuation voltage, with gate contact, when switch closes, under the effect of gate voltage, form Two-dimensional electron gas channel, HEMT conducting, reference signal realizes being multiplied by HEMT with feedback signal, drain electrode output packet is containing the phase information of two signals, select the first port input low pass filter, filtering HFS, output packet is containing the direct voltage of phase information, direct voltage inputs voltage controlled oscillator as control voltage, the output frequency of voltage controlled oscillator is conditioned, signal after regulating frequency through the 3rd port transmission to divider, divider output signal is loaded on clamped beam switch as feedback signal, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator the 4th port output frequency f
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal,
When direct current biasing is less than actuation voltage, two clamped beam switches all not with gate contact, when switch disconnects, gate voltage is 0, HEMT cut-off, effectively can reduce grid leakage current, reduces power consumption;
Close when only having a clamped beam switch, when another clamped beam switch is in off-state, Two-dimensional electron gas channel is formed below closed clamped beam switch, high resistance area is formed below the clamped beam switch disconnected, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, only have the gating signal on closed clamped beam switch can be amplified by HEMT, amplifying signal exports through the second port, when only having the clamped beam switch loading reference signal to close, reference signal is amplified by HEMT, and the second port exports reference signal frequency f
refamplifying signal, when only have load the clamped beam switch of feedback signal close time, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port output frequency is f
othe amplifying signal of/N, the clamped beam switch of disconnection is also conducive to reducing grid leakage current, reduces power consumption.
Beneficial effect: the two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention has following significant advantage:
1, two clamped beam switches play the effect of switch in circuit, the conducting of convenient control HEMT.
2, that circuit is facilitated is controlled for clamped beam construction of switch, by the control to single clamped beam switch, realizes to the process of individual signals, making Multifunctional circuit, expanded application scope.
3, HEMT combines with MEMS technology, circuit efficiency is promoted, lower power consumption, simplifies the structure, and volume is miniaturized.
Accompanying drawing explanation
Fig. 1 is the vertical view of the two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention.
Fig. 2 is that the A-A ' of the two clamped beam switch double grid HEMT frequency multiplier of Fig. 1 GaAs base low-leakage current is to profile.
Fig. 3 is that the B-B ' of the two clamped beam switch double grid HEMT frequency multiplier of Fig. 1 GaAs base low-leakage current is to profile.
Fig. 4 be two clamped beam switch double grid HEMT frequency multiplier two switches of Fig. 1 GaAs base low-leakage current all drop-down closed time raceway groove schematic diagram.
Fig. 5 be the two clamped beam switch double grid HEMT frequency multiplier single switch of Fig. 1 GaAs base low-leakage current drop-down closed time raceway groove schematic diagram.
Embodiment
The two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention comprises GaAs substrate, enhancement mode HEMT, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil; Wherein HEMT growth on gaas substrates, is followed successively by intrinsic GaAs layer from bottom to up, intrinsic AlGaAs layer, N+AlGaAs layer, and two grids arranged side by side are positioned on N+AlGaAs layer; Source electrode and drain electrode are deep into intrinsic GaAs layer in addition.Intrinsic GaAs layer and intrinsic AlGaAs layer form heterojunction, and grid and N+AlGAs form Schottky contacts.Two clamped beam switches are suspended in directly over two grids respectively by anchor district.Be provided with drop-down pole plate between grid and anchor district, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate.
Reference signal and feedback signal are loaded on two clamped beam switches respectively by anchor district.Direct current biasing is acted on clamped beam switch by high frequency choke coil and anchor district.High frequency choke coil ensures that direct current biasing and AC signal separate.
The actuation voltage of clamped beam switch is designed to the threshold voltage of HEMT.When direct current biasing is less than actuation voltage, two clamped beam switches are all in suspend and disconnect, time not with gate contact, grid voltage is 0, for enhancement mode HEMT, Schottky barrier is deep into intrinsic GaAs layer, and the two-dimensional electron gas on intrinsic GaAs layer and intrinsic AlGaAs layer heterojunction border is depleted, so HEMT cannot conducting.
Reach when direct current biasing or be greater than actuation voltage, two clamped beam switches all drop-down closed with gate contact time, gate voltage is the size of direct current biasing, now Schottky barrier narrows, two-dimensional electron gas increases, and HEMT conducting, reference signal is multiplied by HEMT with feedback signal.Drain electrode outputs signal the phase information contained between reference signal and feedback signal.Low pass filter by the high fdrequency component filtering in this signal, and carries a direct voltage to voltage controlled oscillator, regulates the frequency of the output signal of voltage controlled oscillator.Voltage controlled oscillator output signal is after divider, the corresponding change that 1/N occurs in frequency, and as feedback signal, re-enter HEMT, through the effect of loop, feedback signal and reference signal reach locking, and namely voltage controlled oscillator output frequency is equal with reference signal frequency divided by the frequency after N.So the signal frequency that final voltage controlled oscillator exports is N times of reference signal frequency, realizes frequency multiplication.
When only having a clamped beam switch to close with corresponding gate contact, Two-dimensional electron gas channel is formed below closed clamped beam switch, be high resistance area below another clamped beam disconnected, the structure that raceway groove is connected with high resistance area effectively can improve the reverse breakdown voltage of device.Only have the gating signal on corresponding clamped beam switch can be amplified by HEMT to export.Thus by the independent control to a clamped beam switch, realize the amplification to individual signals, expand the range of application of circuit.
Below in conjunction with accompanying drawing, the two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention is further explained.
As shown in Figure 1, the two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention comprises GaAs substrate 1, arranges enhancement mode HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, divider, high frequency choke coil.
HEMT comprises intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N+AlGaAs layer 4, source electrode 5, and drain 6, two grids 7,8, two, anchor district clamped beam switch 9, drop-down pole plate 10, insulating barrier 11, through hole 12, lead-in wire 13.Wherein, source electrode 5 ground connection, clamped beam switch 9 is suspended in above grid 7 by anchor district 8, two grids 7 and two clamped beam switch 9 one_to_one corresponding, and drop-down pole plate 10 is arranged on below clamped beam switch 9, lower rubbish pole plate 10 ground connection.Inner in HEMT-structure, grid 7 and N+AlGaAs layer 4 form Schottky contacts, and intrinsic AlGaAs layer 3 and intrinsic GaAs layer 2 form heterojunction.For enhancement mode HEMT, when gate voltage is 0, the Two-dimensional electron gas channel of heterojunction boundary is exhausted by Schottky contacts.
HEMT drain electrode 6 output signal can select two kinds of working methods, one is that selection first port 14 accesses low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports and accesses divider by the 3rd port one 6, the output signal of divider accesses a clamped beam switch 9 as feedback signal by anchor district 8, and reference signal accesses another clamped beam switch by anchor district 8.The another kind of working method of HEMT drain electrode 6 output signal is that selection second port one 5 directly exports amplifying signal.
Direct current biasing is acted on clamped beam switch by high frequency choke coil and anchor district 8.High frequency choke coil ensures that direct current biasing and AC signal separate.The actuation voltage of clamped beam switch 9 is designed to the threshold voltage of HEMT, when direct current biasing is less than actuation voltage, clamped beam switch does not contact with grid 7, when switch disconnects, gate voltage is 0, and heterojunction boundary does not have Two-dimensional electron gas channel, and HEMT ends, effectively can reduce grid leakage current, reduce power consumption.
When direct current biasing reaches or surpasses actuation voltage, two clamped beam switches 9 are all drop-down to be contacted with grid 7, and when switch closes, under the effect of gate voltage, two-dimensional electron gas is assembled at heterojunction boundary, forms raceway groove, as shown in Figure 4, and HEMT conducting.Reference signal is multiplied by HEMT with feedback signal.Drain electrode 6 outputs signal the phase information contained between two signals, selects the first port 14 to input low pass filter, the high fdrequency component filtering during drain electrode exports by low pass filter, and carry a direct voltage to voltage controlled oscillator, direct voltage can be expressed as:
Wherein K is HEMT gain coefficient, f
reffor reference signal frequency, f
backfor feedback frequency signal, φ is that proper phase is poor.Voltage controlled oscillator under the control of direct voltage, the size of regulation output signal frequency.Voltage controlled oscillator output frequency can be expressed by following differential representation formula:
Wherein, f
ofor voltage controlled oscillator output frequency, K
vfor voltage controlled oscillator sensitivity.After divider, frequency becomes original 1/N, and as feedback signal, re-enters HEMT.Namely:
Through feedback ringing, the frequency final sum reference signal of feedback signal is consistent.That is:
So the signal frequency that final voltage controlled oscillator the 3rd port one 7 exports is N times of reference signal frequency, realizes the frequency multiplication of reference signal.
Only has a clamped beam switch 9 by drop-down closed, when another clamped beam switch 9 is in suspension off-state, Two-dimensional electron gas channel is formed below closed clamped beam switch 9, be high resistance area below the clamped beam switch 9 disconnected, as shown in Figure 5, raceway groove is connected with high resistance area, is conducive to improving reverse breakdown voltage.Now, only have the gating signal on closed clamped beam switch 9 can be amplified by HEMT, amplifying signal is exported by the second port one 5.When only having the clamped beam switch 9 loading reference signal to close, reference signal is amplified by HEMT, and the second port one 5 output frequency is f
refamplifying signal.When only having the clamped beam switch 9 loading feedback signal to close, feedback frequency signal is the result of pressuring controlling oscillator frequency after divider, i.e. f
o/ N, so the second port one 5 output frequency is f
othe amplifying signal of/N.Thus by the independent control to a clamped beam switch 9, realize the amplification to individual signals, expand the range of application of circuit.In addition, for the clamped beam switch 9 disconnected, can grid leakage current be reduced, reduce power consumption.
The preparation method of the two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention is as follows:
1) at semi-insulating P type GaAs substrate;
2) epitaxial growth intrinsic GaAs layer about 500nm;
3) epitaxial growth intrinsic AlGaAs separator is about 50nm;
4) grow N+ type AlGaAs layer about 20nm, doping content is 1 × 10
18cm
-3, control thickness and doping content, make HEMT manage as enhancement mode;
5) grow N+ type GaAs thickness and be about 300nm, doping content is 3.5 × 10
18cm
-3;
6) mesa etch isolation active area;
7) grown silicon nitride;
8) photoetching silicon nitride layer, carves source-drain electrode territory, carries out N+ ion implantation, forms source electrode and drain electrode, removes silicon nitride;
9) apply photoresist, the photoresist of electrode contact locations is removed in photoetching;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off, alloying forms source, leaks Ohm contact electrode;
12) apply photoresist, the photoresist of gate location is removed in photoetching;
13) growth thickness is 0.5 μm of Ti/Pt/Au;
14) remove the metal on photoresist and photoresist, form the grid of Schottky contacts;
15) apply photoresist, make lead-in wire by lithography, the window in drop-down pole plate and clamped beam anchor district;
16) Au that a layer thickness is 0.3 μm is grown;
17) remove photoresist, form the anchor district of lead-in wire, drop-down pole plate, clamped beam;
18) depositing insulating layer, application epitaxy technique grows the Si of 0.1 μm
xn
1-xinsulating barrier;
19) unnecessary insulating barrier is removed in photoetching, only retains the insulating barrier above drop-down pole plate;
20) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below clamped beam;
21) down payment of one deck for electroplating is grown: evaporation Ti/Au/Ti, as seed layer thickness 50/150/30nm;
22) apply photoresist, make clamped beam by lithography, the window of anchor district and connecting line;
23) electroplate one deck gold, its thickness is 2 μm;
24) remove photoresist, remove the layer gold on photoresist simultaneously;
25) anti-carve titanium/gold/titanium, corrosion Seed Layer, formed clamped beam and and connecting line;
26) polyimide sacrificial layer is removed, release MEMS clamped beam;
27) HEMT of preparation is connected with external circuit, forms frequency multiplier.
Whether distinguish is that the standard of this structure is as follows:
The two clamped beam switch double grid HEMT frequency multiplier of GaAs base low-leakage current of the present invention, two grids are set up in parallel, and two clamped beam switches are suspended on two grids respectively by anchor district.Reference signal and feedback signal are carried on two clamped beam switches respectively by anchor district.Closed or the off-state of clamped beam switch is controlled by direct current biasing, and actuation voltage is designed to the threshold voltage of HEMT.When clamped beam switch disconnects, gate voltage is 0, HEMT cut-off.When two clamped beam switches all close with gate contact by direct current biasing is drop-down, two-dimensional electron gas raceway groove is formed, HEMT conducting, reference signal is multiplied by HEMT with feedback signal, drain electrode output packet is containing the phase information of two signals, through low pass filter, the circulation of voltage controlled oscillator, divider feedback, final voltage controlled oscillator exports the frequency signal that reference signal is multiplied by N.In addition, drop-down closed single clamped beam switch can realize the amplification to individual signals, and meanwhile, another is not formed high resistance area by below drop-down closed clamped beam switch, effectively can improve the reverse breakdown voltage of HEMT.
Claims (2)
1. the two clamped beam switch double grid frequency multiplier of GaAs based low-leakage current, it is characterized in that the HEMT of this frequency multiplier is the enhancement mode HEMT of growth on GaAs substrate (1), comprise intrinsic GaAs layer (2), intrinsic AlGaAs layer (3), N+AlGaAs layer (4), source electrode (5), drain electrode (6), grid (7), anchor district (8), clamped beam switch (9), drop-down pole plate (10), insulating barrier (11), through hole (12), lead-in wire (13), GaAs substrate (1) has intrinsic GaAs layer (2), intrinsic GaAs layer (2) there is intrinsic AlGaAs layer (3), intrinsic AlGaAs layer (3) there is N+AlGaAs layer (4), source electrode (5), drain electrode (6) is positioned at the both sides of two clamped beam switches (9), source electrode (5) ground connection, two grids (7) are set up in parallel, with two clamped beam switch (9) one_to_one corresponding, the two ends of clamped beam switch (9) are fixed in anchor district (8), the middle part of clamped beam switch (9) is suspended on grid (7), drop-down pole plate (10) is arranged between anchor district (8) and grid (7), drop-down pole plate (10) ground connection, insulating barrier (11) covers on drop-down pole plate (10), direct current biasing acts on clamped beam switch (9) by high frequency choke coil and anchor district (8), the actuation voltage of clamped beam switch (9) is designed to the threshold voltage of HEMT, lead-in wire (13) connects intrinsic GaAs layer (2) respectively by through hole (12),
HEMT drain electrode (6) output signal has two kinds of different working methods, one is that selection first port (14) inputs to low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the 3rd port (16) access divider, divider output signal is loaded on a clamped beam switch (9) as feedback signal by anchor district (8), form feedback loop, reference signal is loaded on another clamped beam switch (9) by anchor district (8), the another kind of working method that HEMT drain electrode (6) outputs signal is that selection second port (15) directly exports amplifying signal.
2. the two clamped beam switch double grid frequency multiplier of GaAs based low-leakage current according to claim 1, it is characterized in that, closed or the disconnection of clamped beam switch (9) is controlled by direct current biasing, when two clamped beam switches (9) all realize drop-down under the direct current biasing reaching or surpassing actuation voltage, contact with grid (7), when switch closes, under the effect of gate voltage, form Two-dimensional electron gas channel, HEMT conducting, reference signal realizes being multiplied by HEMT with feedback signal, drain electrode (6) output packet is containing the phase information of two signals, the first port (14) is selected to input low pass filter, filtering HFS, output packet is containing the direct voltage of phase information, direct voltage inputs voltage controlled oscillator as control voltage, the output frequency of voltage controlled oscillator is conditioned, signal after regulating frequency transfers to divider through the 3rd port (16), divider output signal is loaded on clamped beam switch (9) as feedback signal, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator the 4th port (17) output frequency f
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal,
When direct current biasing is less than actuation voltage, two clamped beam switches (9) all do not contact with grid (7), and when switch disconnects, gate voltage is 0, HEMT cut-off, effectively can reduce grid leakage current, reduces power consumption;
When only having a clamped beam switch (9) closing, when another clamped beam switch (9) is in off-state, closed clamped beam switch (9) below forms Two-dimensional electron gas channel, clamped beam switch (9) below disconnected forms high resistance area, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, only have the gating signal on closed clamped beam switch (9) can be amplified by HEMT, amplifying signal exports through the second port (15), when only having the clamped beam switch (9) loading reference signal closed, reference signal is amplified by HEMT, second port (15) exports reference signal frequency f
refamplifying signal, when only having the clamped beam switch (9) loading feedback signal closed, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port (15) output frequency is f
othe amplifying signal of/N, the clamped beam switch (9) of disconnection is also conducive to reducing grid leakage current, reduces power consumption.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379436.0A CN104935256B (en) | 2015-07-01 | 2015-07-01 | The double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379436.0A CN104935256B (en) | 2015-07-01 | 2015-07-01 | The double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104935256A true CN104935256A (en) | 2015-09-23 |
| CN104935256B CN104935256B (en) | 2017-12-19 |
Family
ID=54122263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510379436.0A Expired - Fee Related CN104935256B (en) | 2015-07-01 | 2015-07-01 | The double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104935256B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790064A (en) * | 2016-01-27 | 2016-07-20 | 深圳市极致兴通科技有限公司 | Low-power consumption EML drive circuit and method |
| CN113315487A (en) * | 2021-05-17 | 2021-08-27 | 无锡豪帮高科股份有限公司 | Preparation and packaging process of high-impedance band-rejection low-pass filter for 5G communication |
| CN113315486A (en) * | 2021-05-17 | 2021-08-27 | 无锡豪帮高科股份有限公司 | High-impedance band suppression low-pass filter for 5G communication |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
-
2015
- 2015-07-01 CN CN201510379436.0A patent/CN104935256B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
Non-Patent Citations (4)
| Title |
|---|
| JUZHENG HAN ET AL: "Third-order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology", 《IEEE SENSOR JOURNAL》 * |
| ZHAQIANG ZHANG ET AL: "Suspended Thermopile for Microwave Power Sensor Based on Buik MEMS and GaAs MMIC Technology", 《IEEE SENSOR JOURNAL》 * |
| ZHIQIANG ZHANG ET AL: "A Directional Inline-Type Millimeter-Wave MEMS Power Sensor for GaAs MMIC Applicaitons", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
| 廖小平: "0.18um射频SOI LDMOS功率器件的研究", 《微电子学》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790064A (en) * | 2016-01-27 | 2016-07-20 | 深圳市极致兴通科技有限公司 | Low-power consumption EML drive circuit and method |
| CN105790064B (en) * | 2016-01-27 | 2018-11-23 | 深圳市极致兴通科技有限公司 | A kind of low-power consumption EML driving circuit and method |
| CN113315487A (en) * | 2021-05-17 | 2021-08-27 | 无锡豪帮高科股份有限公司 | Preparation and packaging process of high-impedance band-rejection low-pass filter for 5G communication |
| CN113315486A (en) * | 2021-05-17 | 2021-08-27 | 无锡豪帮高科股份有限公司 | High-impedance band suppression low-pass filter for 5G communication |
| CN113315487B (en) * | 2021-05-17 | 2022-04-19 | 无锡豪帮高科股份有限公司 | Preparation and packaging process of high-impedance band-rejection low-pass filter for 5G communication |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104935256B (en) | 2017-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104950172A (en) | GaAs-based low-leakage-current microwave phase detector provided with double clamped-beam switches | |
| JP2021510461A (en) | Group III nitride enhancement type HEMT based on the composite barrier layer structure and its manufacturing method | |
| CN106024914A (en) | GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof | |
| CN104143569B (en) | Semiconductor devices, antenna switch circuit and radio communications set | |
| CN107799590A (en) | The GaN base microwave power device and its manufacture method of a kind of big grid width | |
| CN104935256A (en) | Gallium arsenide base low leakage current double-fixed beam switch double-gate frequency multiplier | |
| CN104993825A (en) | Gallium arsenide-based low-leakage-current double-cantilever-beam-switch double-gate frequency divider | |
| CN105044452B (en) | Based on GaAs base low-leakage current double cantilever beam switching frequency detectors | |
| CN104935335B (en) | The double clamped beam switch double grid phase-locked loop circuits of GaAs base low-leakage current | |
| CN105049038A (en) | GaAs-based low-leakage current double-fixed-fixed beam switch double-gate frequency divider | |
| CN105049033A (en) | NOR gate based on GaAs-based low-leakage current double-cantilever beam switch | |
| CN105162420A (en) | Gallium-arsenide-based low-leakage-current double-cantilever switch double-grid frequency multiplier | |
| CN207611772U (en) | A kind of GaN base microwave power device of big grid width | |
| CN104935330B (en) | GaAs base low-leakage current double cantilever beam switchs double grid phase-locked loop circuit | |
| CN105141288B (en) | Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate | |
| CN104935257B (en) | The double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier | |
| CN105116222B (en) | Double cantilever beam switchs GaAs base low-leakage current microwave phase detector device | |
| CN104935328A (en) | Silicon base low leakage current dual-fixed beam movable gate frequency divider | |
| CN205911315U (en) | GaN base schottky diode who mixes positive pole electrode structure | |
| CN104935255A (en) | Silica-based frequency multiplier of double-cantilever movable gate with low leakage current | |
| CN104935336A (en) | Phase-locked loop circuit of a silica-based double-cantilever beam movable gate with low leakage current | |
| CN104993824B (en) | Silicon substrate low-leakage current double cantilever beam can moving grid frequency divider | |
| JP2017201699A (en) | Semiconductor device, antenna switch circuit, and radio communication device | |
| CN105049001B (en) | Rest-set flip-flop based on the cantilever switch of GaAs base low-leakage current four | |
| CN105044454A (en) | Silicon-based low-leakage current dual-cantilever beam movable gate frequency detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 211134 Jiangsu Nanjing city Jiangning District Tangshan street crane age community cemetery No. 57 Applicant after: Southeast University Address before: 211189 Jiangsu Road, Jiangning District, Southeast University, No. 2, No. Applicant before: Southeast University |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: SOUTHEAST University Address before: 211134 No. 57 Heling Community Cemetery, Tangshan Street, Jiangning District, Nanjing City, Jiangsu Province Patentee before: Southeast University |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171219 |