CN103983085A - Method for controlling temperature of krypton and xenon separation tower - Google Patents
Method for controlling temperature of krypton and xenon separation tower Download PDFInfo
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- CN103983085A CN103983085A CN201410243371.2A CN201410243371A CN103983085A CN 103983085 A CN103983085 A CN 103983085A CN 201410243371 A CN201410243371 A CN 201410243371A CN 103983085 A CN103983085 A CN 103983085A
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Abstract
The invention discloses a method for controlling the temperature of a krypton and xenon separation tower, and relates to the technology of deep cooling separation methods. The method for controlling the temperature of the krypton and xenon separation tower comprises the steps that set time Tn1 is used as a period for detecting key temperature of temperature detection points set inside a rectifying tower set, the power basic value is adjusted according to the relationship between the key temperature value and a safety temperature value, set time Tn2 is used as a period for detecting key temperature of the temperature detection points set inside the rectifying tower set, and the power basic value is adjusted according to the relationship between the key temperature value and a set temperature value. When the key temperature during krypton and xenon separation changes and working conditions cannot be stabilized through automatic adjustment in time, the power basic value is interfered automatically and rapidly so that the purpose of recovering the working conditions rapidly is achieved.
Description
Technical field
The present invention relates to cryogenic separation law technology, relate in particular to a kind of temperature-controlled process of krypton xenon knockout tower.
Background technology
Deep Cooling Method, in the time separating krypton xenon mixture, by controlling the temperature of krypton xenon knockout tower key temperatures point, reaches the object that krypton is separated with xenon.In the time of operation, the variation of this temperature will directly affect krypton xenon separating effect.Excess Temperature, a large amount of xenons is evaporated to knockout tower top, sneaks in krypton, causes the recovery rate of xenon to decline, and can affect the purity of the pure krypton of follow-up rectifying when serious; Temperature is too low, and top krypton and nitrous oxide, fluoride etc. are condensed in the xenon of bottom, causes high-purity krypton recovery rate to reduce, and in xenon, impurity increases, and affects high-purity xenon purity.
Chinese patent (CN103712416A) discloses the method for controlling crude krypton xenon concentration tower reboiler power, be applied in rectifying tower group, comprise the following steps: that S1. records all temperature points of rectifying tower group and is T1, evaporate rapidly the liquid oxygen of rectifier bottoms in the mode of manual adjustments reboiler power; S2. in the time that rectifying tower group middle and lower part temperature is increased to T2 left and right gradually, progressively reduce the output of reboiler power, constantly regulating power output, tends towards stability temperature; S3. between T3～T4, hover and record reboiler performance number now when temperature, as the parameter of power base value, change the power control of reboiler into automatic adjusting, rectifying tower group control point temperature is carried out to temperature control, according to the modifications adjustment factor of power and temperature value, make temperature further stable simultaneously.
This patent is by regulating reboiler power to reach the object of stablizing key point temperature, but in the time that operating mode changes suddenly, need within the utmost point short time, interfere reboiler power, recover rapidly key point temperature, and rely on artificial manually intervention can not ensure that the very first time finds the variation of operating mode, also cannot ensure that operating mode can recover rapidly at short notice.
Summary of the invention
The problems referred to above that exist for the method for existing control crude krypton xenon concentration tower reboiler power, now provide a kind of temperature-controlled process of krypton xenon knockout tower for the feature of reboiler power adjusting, when changing appears in the key temperatures separating at krypton xenon, in automatic adjusting in time when steady working condition, rapidly power base value is intervened automatically, realize the object that operating mode is recovered.
A temperature-controlled process for krypton xenon knockout tower, is applied in rectifying tower group, comprises the steps:
Step 1. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and according to the relation of key temperatures value and safe temperature value, power base value is regulated;
Step 2. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and according to the relation of key temperatures value and set temperature value, power base value is regulated.
Preferably, the detailed process of described step 1 is:
Step 11. detects the key temperatures T1 of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and the corresponding described power base value of described key temperatures T1 is P1;
Step 12. judges whether key temperatures T1 is more than or equal to default safe temperature value Ts, if so, performs step 13, if not, and execution step 14;
It is P1 that step 13. keeps power base value, execution step 11;
Power base value is increased to P1' by step 14., execution step 11.
Preferably, the scope of described power base value P1 is: 0～80.
Preferably, the detailed process that in step 14, power base value is increased to P1' is:
P1'＝P1+Ps；
Wherein, Ps is setting value.
Preferably, the detailed process of described step 2 is:
Step 21. detects the key temperatures T2 of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and the corresponding described power base value of described key temperatures T2 is P2;
Step 22. judges that key temperatures T2 is less than or equal to the set temperature value SV of automatic regulating power, if so, performs step 23, if not, and execution step 24;
It is P2 that step 23. keeps power base value, execution step 23;
Power base value is increased to P2' by step 24., execution step 24.
Preferably, the scope of described power base value P2 is: 0～80.
Preferably, the detailed process that in step 24, power base value is increased to P2' is:
P2'＝P1-Ps；
Wherein, Ps is setting value.
Preferably, described automatic regulating power adopts PID regulative mode.
The beneficial effect of technique scheme:
When having realized the key temperatures separating when krypton xenon and occurring changing,, rapidly power base value is intervened automatically in time when steady working condition in automatic adjusting, reach the object of rapid recovery operating mode.
Brief description of the drawings
Fig. 1 is the method flow diagram of the embodiment of the temperature-controlled process of a kind of krypton xenon of the present invention knockout tower; Figure;
Fig. 2 is the structural representation of rectifying tower group of the present invention;
Fig. 3 is the method flow diagram of the present invention a kind of embodiment that power base value is regulated;
Fig. 4 is the method flow diagram of the present invention another kind of embodiment that power base value is regulated;
Fig. 5 is the schematic diagram of the temperature-controlled process of krypton xenon knockout tower of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the present invention can combine mutually.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
As shown in Figure 1, a kind of temperature-controlled process of krypton xenon knockout tower, is applied in rectifying tower group, comprises the steps:
Step 1. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and according to the relation of key temperatures value and safe temperature value, power base value is regulated;
Step 2. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and according to the relation of key temperatures value and set temperature value, power base value is regulated.
In the present embodiment, by node cycle time setting, key temperatures and safe temperature and set temperature value are compared, thereby regulating power base value, realize in automatic adjusting in time when steady working condition, can automatically intervene power base value rapidly, reach the object of rapid recovery operating mode.
In a preferred embodiment, as shown in Figures 2 and 3, the detailed process of step 1 is:
Step 11. detects the key temperatures T1 of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and the corresponding power base value of key temperatures T1 is P1;
Step 12. judges whether key temperatures T1 is more than or equal to default safe temperature value Ts, if so, performs step 13, if not, and execution step 14;
It is P1 that step 13. keeps power base value, execution step 11;
Power base value is increased to P1' by step 14., execution step 11.
In a preferred embodiment, the scope of power base value P1 is: 0～80, and to avoid reboiler power P cannot return to for a long time in normal range (NR).
Reboiler is positioned at the bottom of rectifying tower group, reboiler power output P=power base value P1+ adjustment factor K (the automatic regulating power P0 of 0.5-),
Wherein, K represents adjustment factor, the step-length changing to limit reboiler power.
The power output of reboiler can ensure the temperature stabilization of rectifying tower group inside, so that krypton is separated with xenon.
In a preferred embodiment, as shown in Figure 5, the detailed process that in step 14, power base value is increased to P1' is:
P1'＝P1+Ps；
Wherein, Ps is setting value.
In a preferred embodiment, as shown in Figure 4, the detailed process of step 2 is:
Step 21. detects the key temperatures T2 of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and the corresponding power base value of key temperatures T2 is P2;
Step 22. judges that key temperatures T2 is less than or equal to the set temperature value SV of automatic regulating power, if so, performs step 23, if not, and execution step 24;
It is P2 that step 23. keeps power base value, execution step 23;
Power base value is increased to P2' by step 24., execution step 24.
In a preferred embodiment, the scope of power base value P2 is: 0～80, and to avoid reboiler power P cannot return to for a long time in normal range (NR).
In a preferred embodiment, as shown in Figure 5, the detailed process that in step 24, power base value is increased to P2' is:
P2'＝P1-Ps；
Wherein, Ps is setting value.
In a preferred embodiment, regulating power adopts PID regulative mode automatically.
The foregoing is only preferred embodiment of the present invention; not thereby limit embodiments of the present invention and protection domain; to those skilled in the art; the scheme that being equal to of should recognizing that all utilizations description of the present invention and diagramatic content done replaces and apparent variation obtains, all should be included in protection scope of the present invention.
Claims (8)
1. a temperature-controlled process for krypton xenon knockout tower, is applied in rectifying tower group, it is characterized in that, comprises the steps:
Step 1. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and according to the relation of key temperatures value and safe temperature value, power base value is regulated;
Step 2. detects the key temperatures of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and according to the relation of key temperatures value and set temperature value, power base value is regulated.
2. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 1, is characterized in that, the detailed process of described step 1 is:
Step 11. detects the key temperatures T1 of rectifying tower group inner setting temperature point as the cycle taking the time T n1 setting, and the corresponding described power base value of described key temperatures T1 is P1;
Step 12. judges whether key temperatures T1 is more than or equal to default safe temperature value Ts, if so, performs step 13, if not, and execution step 14;
It is P1 that step 13. keeps power base value, execution step 11;
Power base value is increased to P1' by step 14., execution step 11.
3. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 2, is characterized in that, the scope of described power base value P1 is: 0～80.
4. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 2, is characterized in that, the detailed process that in step 14, power base value is increased to P1' is:
P1'＝P1+Ps；
Wherein, Ps is setting value.
5. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 1, is characterized in that, the detailed process of described step 2 is:
Step 21. detects the key temperatures T2 of rectifying tower group inner setting temperature point as the cycle taking the time T n2 setting, and the corresponding described power base value of described key temperatures T2 is P2;
Step 22. judges that key temperatures T2 is less than or equal to the set temperature value SV of automatic regulating power, if so, performs step 23, if not, and execution step 24;
It is P2 that step 23. keeps power base value, execution step 23;
Power base value is increased to P2' by step 24., execution step 24.
6. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 5, is characterized in that, the scope of described power base value P2 is: 0～80.
7. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 5, is characterized in that, the detailed process that in step 24, power base value is increased to P2' is:
P2'＝P1-Ps；
Wherein, Ps is setting value.
8. the temperature-controlled process of krypton xenon knockout tower as claimed in claim 1, is characterized in that, described automatic regulating power adopts PID regulative mode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243371.2A CN103983085B (en) | 2014-06-03 | 2014-06-03 | A kind of temprature control method of krypton xenon knockout tower |
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| CN201410243371.2A CN103983085B (en) | 2014-06-03 | 2014-06-03 | A kind of temprature control method of krypton xenon knockout tower |
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| CN103983085A true CN103983085A (en) | 2014-08-13 |
| CN103983085B CN103983085B (en) | 2019-06-04 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010126394A (en) * | 2008-11-27 | 2010-06-10 | Taiyo Nippon Sanso Corp | Xenon rectification apparatus |
| CN102538393A (en) * | 2011-07-26 | 2012-07-04 | 上海启元空分技术发展股份有限公司 | Method for separating concentrated krypton-xenon containing CO2 and methane |
| CN101913580B (en) * | 2010-07-16 | 2012-12-19 | 杭州杭氧股份有限公司 | Method and device for extracting inert gases of krypton and xenon from liquid oxygen |
| CN103759501A (en) * | 2014-01-16 | 2014-04-30 | 上海交通大学 | Low-temperature rectification device for production of ultra-pure xenon |
-
2014
- 2014-06-03 CN CN201410243371.2A patent/CN103983085B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010126394A (en) * | 2008-11-27 | 2010-06-10 | Taiyo Nippon Sanso Corp | Xenon rectification apparatus |
| CN101913580B (en) * | 2010-07-16 | 2012-12-19 | 杭州杭氧股份有限公司 | Method and device for extracting inert gases of krypton and xenon from liquid oxygen |
| CN102538393A (en) * | 2011-07-26 | 2012-07-04 | 上海启元空分技术发展股份有限公司 | Method for separating concentrated krypton-xenon containing CO2 and methane |
| CN103759501A (en) * | 2014-01-16 | 2014-04-30 | 上海交通大学 | Low-temperature rectification device for production of ultra-pure xenon |
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| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: BAOJIN XINCHENG JIANGDU GAS CO., LTD. Effective date: 20141127 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Chen Yunkai Inventor after: Yu Jian Inventor after: Li Youbing Inventor after: Ding Jiacang Inventor after: Lin Wei Inventor after: Chen Zhengqiao Inventor after: Lu Kai Inventor after: Shi Songji Inventor before: Chen Yunkai Inventor before: Yu Jian |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CHEN YUNKAI YU JIAN TO: CHEN YUNKAI YU JIAN LI YOUBING DING JIACANG LIN WEI CHEN ZHENGQIAO LU KAI SHI SONGJI |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20141127 Address after: 201802 No. 150, Yu Lu, Jiading District, Shanghai Applicant after: Shanghai Qiyuan Air Separation Technology Development Co., Ltd. Applicant after: BAOJIN METRO JIANGDU GAS CO., LTD. Address before: 201802 No. 150, Yu Lu, Jiading District, Shanghai Applicant before: Shanghai Qiyuan Air Separation Technology Development Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190604 Termination date: 20210603 |