CN103529581A - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

Info

Publication number
CN103529581A
CN103529581A CN201310491955.7A CN201310491955A CN103529581A CN 103529581 A CN103529581 A CN 103529581A CN 201310491955 A CN201310491955 A CN 201310491955A CN 103529581 A CN103529581 A CN 103529581A
Authority
CN
China
Prior art keywords
solar cell
substrate
display panel
photic zone
array base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310491955.7A
Other languages
English (en)
Inventor
伦建超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201310491955.7A priority Critical patent/CN103529581A/zh
Publication of CN103529581A publication Critical patent/CN103529581A/zh
Priority to PCT/CN2014/077661 priority patent/WO2015055004A1/zh
Priority to US14/429,992 priority patent/US9507190B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324—Circuits comprising solar cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/106—Cd×Se or Cd×Te and alloys
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/108—Materials and properties semiconductor quantum wells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明提供一种显示面板及显示装置，属于液晶显示技术领域，其可解决现有的显示面板中太阳能电池吸收光量有限的问题。本发明的显示面板，包括由子像素构成的透光区，至少在所述显示面板的部分透光区上设置有太阳能电池，用于给显示面板供电；所述太阳能电池的第一电极与第二电极均采用透明导电材料制成，且至少与所述透光区处的子像素颜色相同的光能够透过所述太阳能电池。

Description

显示面板及显示装置
技术领域
本发明属于液晶显示技术领域，具体涉及一种显示面板及显示装置
背景技术
液晶显示装置具有轻薄、功耗小、数字化等优点，目前在市场上越来越受到广泛应用。由于液晶本身不发光，也无法依赖自然光采光，因此必须采用背光源以获得稳定、清晰的显示。一般来说，背光源的电能来源于外接的电池，比如锂电池，而电池的储电量有限，每次使用完后需要充电，给使用者带来不便。
太阳能电池是利用光伏特效应将太阳能转化为光能的一种装置。如图1所述，在常规的太阳能电池中，当N型半导体材料和P型半导体材料接触后，导电粒子会发生扩散和漂移，从而在两种半导体材料的界面处形成由N型指向P型的内建电场。当光照在太阳能电池的表面后，能量大于禁带宽度的光子，可提供能量，使得半导体材料中的电子-空穴对被激发出来。这些被激发出来的少数载流子在内电场的作用下分离，并迅速在太阳能电池的上下两极积累。基于上述原理，将负载与太阳能电池两极相连，即可实现太阳能电池为该负载供电。
由于利用太阳能发电具有环保、安全等优点，因此，在耗电装置例如液晶显示装置中，尽可能有效地利用太阳能电池获取光线并产生能量，将极大的有利于节省资源的消耗以及环境保护。
常规的液晶显示装置，包括：驱动电路，阵列基板，彩膜基板，设置在阵列基板与彩膜基板间的液晶层，以及背光源，其正常的工作过程中，来自背背光源的光透过阵列基板，投射至液晶层，驱动电路通过调整阵列基板与彩膜基板之间的电场分布，控制液晶层中液晶分子发生转动，使得由背光源发出的光部分或全部透过液晶层，并经由彩膜基板透出，从而实现显示。
公开号为公开号为CN101813849A的中国专利申请中，公开了这样一种包含太阳能电池的显示器，所述太阳能电池位于彩膜黑矩阵的位置，相当于把黑矩阵换成了太阳能电池，从而将吸收到背光源的光，将光能转化成电能，给液晶显示装置供电；公开号为CN101995691A的中国专利申请中，公开了一种包含太阳能电池的显示器，所述的太阳能电池位于显示器的非透光部件，同样将吸收到背光源的光，将光能转化成电能，给液晶显示装置供电。这两个专利只是分析液晶显示装置中非透光部件的太阳能电池应用，而对于透光部件没有研究。
发明内容
本发明所要解决的技术问题包括，针对现有的显示面板存在的上述问题，提供一种可以节约功耗的显示面板。
解决本发明技术问题所采用的技术方案是一种显示面板，其包括由子像素构成的透光区，且至少在所述显示面板的部分透光区上设置有太阳能电池，用于给显示面板供电；所述太阳电池的第一电极与第二电极均采用透明导电材料制成，且至少与所述透光区处的子像素颜色相同的光能够透过所述太阳能电池。
本发明的显示面板中的太阳能电池可以透过透光区处的子像素颜色相同的光，同时太阳能电池也吸收了一定量的与子像素颜色不相同的光，将光能转化为电能，可以为显示面板的驱动单元，例如栅极驱动单元、源极驱动单元等提供电能，进而可以节约功耗。而且，显示面板的透光区相对显示面板的遮光区的面积要大得多，当然可以理解的是光照到透光区的量比照到遮光区的量要多得多，本发明的太阳能电池设置在显示面板的透光区，与现有的太阳能电池设于非透光部件处（遮光区）相比较，很明显可以看出设于透光区的太阳能电池能够吸收到的光能要多，经光能转化成电能后，电能也比现有的太阳能电池多，进而本发明的太阳能电池的储能更多。
优选的是，所述太阳能电池还包括第一电极与第二电极之间的活性层，所述活性层由CdSe量子点组成。
进一步优选的是，所述显示面板包括红色子像素、绿色子像素、蓝色子像素，其中，
所述红色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在15-20nm之间，所述绿色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在8-13nm之间，所述蓝色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在2-5nm之间。
优选的是，上述显示面板还包括阵列基板，所述阵列基板包括第一基底、绝缘层和薄膜晶体管，所述太阳能电池设置在第一基底上，绝缘层设置在太阳能电池上方，薄膜晶体管设置在绝缘层上方。
优选的是，上述显示面板还包括阵列基板，所述阵列基板包括第一基底和第二基底，所述第一基底的上表面上设置有薄膜晶体管，所述第二基底的下表面上设置有太阳能电池，其中，所述第一基底下表面与第二基底上表面相贴合。
优选的是，上述显示面板还包括阵列基板，所述阵列基板包括第一基底，所述第一基底的上表面设置有薄膜晶体管，下表面设有太阳能电池。
优选的是，上述显示面板还包括彩膜基板，所述彩膜基板包括第三基底和第四基底，所述第三基底的上表面上设置有彩色滤光层，所述第四基底的下表面上设置有太阳能电池，其中，所述第三基底下表面与第四基底上表面相贴合。
优选的是，上述显示面板还包括彩膜基板，所述彩膜基板包括第三基底，所述第三基底的上表面设置有太阳能电池，下表面设置有彩色滤光层。
优选的是，上述显示面板还包括显示面板的电源模块，所述太阳能电池的两极与所述显示面板的电源模块的两极电连接。
解决本发明技术问题所采用的技术方案是一种显示装置，其包括上述显示面板。
由于本发明的显示装置包括上述显示面板，故其可以节约功耗。
优选的是，上述显示装置还包括：背光源和背光源的电源模块，所述太阳能电池的两极与背光源的电源模块的两极电连接。
附图说明
图1为现有的太阳能电池的结构示意图；
图2、3、4、5、6为本发明的实施例1的显示面板的示意图。
其中附图标记为：101、第一基底；102、太阳能电池；103、绝缘层；104、薄膜晶体管；201、第二基底；301、第三基底；302、第四基底；303、彩色滤光层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
结合图2、3、4、5、6所示，本实施例提供一种显示面板，其包括由子像素构成的透光区，且至少在所述显示面板的部分透光区上设置有太阳能电池102，用于给显示面板供电；其中，太阳能电池的第一电极与第二电极均采用透明导电材料制成，且至少与所述透光区处的子像素颜色相同的光能够透过太阳能电池102。其中，太阳能电池102的第一电极和第二电极的两个电极中，一个电极为阳极，另一电极为阴极，透光区是指显示面板中光能够透过的任何地方。
本实施例中的太阳能电池102可以透过与透光区处的子像素颜色相同的光，同时太阳能电池102也吸收了一定量的与子像素颜色不相同的光，将光能转化为电能，可以为显示面板的驱动单元，例如栅极驱动单元、源极驱动单元等提供电能，进而可以节约功耗。而且显示面板的透光区的面积相对显示面板的遮光区的面积要大得多，当然可以理解的是光照到透光区的量比照到遮光区的量要多得多，本实施例的太阳能电池102设置在显示面板的透光区，与现有的太阳能电池102设于非透光部件处（遮光区）相比较，很明显可以看出设于透光区的太阳能电池102能够吸收到的光量要多，将光能转化成电能后，电能也比现有的太阳能电池102多，进而本实施例的太阳能电池102的储能更多。
优选地，太阳能电池102包括第一电极、第二电极，以及第一电极与第二电极之间的活性层，所述活性层由CdSe量子点组成。本领域技术人员可以理解的是，量子点的吸收特性和透过特性与各种颜色的光的波长是相对应的，并且量子点本身的吸收特性和透过特性也是可以调节的，与量子点本身的粒径相关。当然本实施例的太阳能电池102中的量子点不局限于CdSe量子点一种，也可以包括其他材料的量子点。
进一步优选地，上述显示面板包括红色子像素、绿色子像素、蓝色子像素，其中，所述红色子像素所对应透光区上的太阳能电池102中CdSe量子点的粒径在15-20nm之间，此时太阳能电池102可以吸收除红光以外的其他颜色的光，将光能转化为电能，太阳能电池102只透过红光；所述绿色子像素所对应透光区上的太阳能电池102中CdSe量子点的粒径在8-13nm之间，此时太阳能电池102可以吸收除绿光以外的其他颜色的光，将光能转化为电能，太阳能电池102只透过绿光；所述蓝色子像素所对应透光区上的太阳能电池102中CdSe量子点的粒径在2-5nm之间，此时太阳能电池102可以吸收除蓝光以外的其他颜色的光，将光能转化为电能，太阳能电池102只透过蓝光。也就是说太阳能电池102能透过与透光区处子像素颜色相同的光，其他颜色的光将被太阳能电池102吸收，此时不仅不影响各种颜色子像素的光的透过率，同时用太阳能电池102可以尽可能多的吸收未利用颜色的光（与透光区处子像素颜色不同的光），给显示面板的电源模块等供电还可以节约能源，减少功耗。同理，采用包括其他量子点的太阳能电池102，可根据实际情况而设置不同颜色子像素透光区处量子点的粒径，以便透过与透光区处子像素相同颜色的光。
优选地，本实施例的显示面板包括阵列基板，作为本实施例的一种情况，如图2所示，该阵列基板包括第一基底101、绝缘层103和薄膜晶体管104，所述太阳能电池102设置在第一基底101上，绝缘层103设置在太阳能电池102上方，薄膜晶体管104设置在绝缘层103上方。
该种结构的阵列基板的具体制备方法包括：首先在第一基底101上制备太阳能电池102，在制备好太阳能电池102的第一基底101上形成绝缘层103，然后在完成前述步骤的第一基底101上制备薄膜晶体管104等阵列基板上的其他元件。其中，制备太阳能电池102具体可以包括：在第一基底101上形成太阳能电池102的第一电极，然后通过溅射、蒸镀或者旋涂等方法在第一电极上方形成活性层（即PN结），最后在活性层上形成第二电极。第一电极和第二电极的材料可以采用氧化铟锡（ITO），也可以是其它透明的导电材料。
上述为一种太阳能电池102设置在阵列基板的透光区的情况，此时当有光照射到阵列基板时，太阳能电池102就会吸收一定的光，将光能转化为电能进行储能，进而可以为显示面板的耗能部分供电。
优选地，本实施例的显示面板包括阵列基板，作为本实施例的再一种情况，如图3所示，该阵列基板包括第一基底101，所述第一基底的上表面设置有薄膜晶体管104，下表面设有太阳能电池102。
该种结构的阵列基板的具体制备方法包括：首先在第一基底101的上表面上制备薄膜晶体管104、存储电容等元件；然后在其下表面上制备太阳能电池102。需要说明的是，前述这两个步骤也是可以互换顺序的。其中，太阳能电池102的具体制备方法与上述太阳能电池102的制备方法相同，在此不重复赘述。
上述为另一种太阳能电池102设置在阵列基板的透光区的情况，此时当有光照射到阵列基板时，太阳能电池102就会吸收一定的光，将光能转化为电能进行储能，进而可以为显示面板的耗能部分供电。
优选地，本实施例的显示面板包括阵列基板，作为本实施例的再一种情况，如图4所示，该阵列基板包括第一基底101和第二基底201，第一基底101的上表面上设置有薄膜晶体管104，第二基底201的下表面上设置有太阳能电池102，其中，第一基底101下表面与第二基底201上表面相贴合。
该种结构的阵列基板的具体制备方法包括：首先在第一基底101的上表面上制备薄膜晶体管104、存储电容等其他元件；然后在第二基底201下表面上制备太阳能电池102。需要说明的是，上述两步骤的顺序无先后，是可以互换的。制备太阳能电池的具体步骤与上一种情况相同，在此不重复赘述。最后将制备好的第一基底101的下表面和第二基底201的上表面相贴合。
上述为再一种太阳能电池102设置在阵列基板的透光区的情况，此时当有光照射到阵列基板时，太阳能电池102就会吸收一定的光，将光能转化为电能进行储能，可以为显示面板的耗能部分供电。
优选地，本实施例的显示面板包括彩膜基板，作为本实施例的再一种情况，如图5所示，该彩膜基板包括第三基底301和第四基底302，第三基底301的上表面上设置有彩色滤光层303，第四基底302的下表面上设置有太阳能电池102，其中，第三基底301下表面与第四基底302上表面相贴合。
该种结构的阵列基板的具体制备方法包括：首先在第三基底301的上表面上形成彩色滤光层303；然后在第四基底302的下表面上形成太阳能电池；需要说明的是，上述两步骤的顺序无先后，顺序是可以互换的。制备太阳能电池的具体步骤与上一种情况相同，在此不重复赘述。最后将制备好的第三基底301的下表面和第四基底302的上表面相贴合。
当然还可以在制备好的阵列基板上制备太阳能电池102，也就是在第一基底先制备薄膜晶体管104、存储电容等元器件，然后再制备一层绝缘层103，最后在绝缘层103上方制备太阳能电池。
上述为一种太阳能电池102设置在彩膜基板的透光区的情况，此时当有光照射到太阳能电池102时，太阳能电池102就会吸收一定的光，将光能转化为电能进行储能，可以为显示面板的耗能部分供电。
优选地，本实施例的显示面板包括彩膜基板，作为本实施例的另一种情况，如图6所示，所述彩膜基板包括第三基底301，所述第三基底301的上表面设置有太阳能电池102，下表面设置有彩色滤光层303。
该种结构的具体制备方法包括：首先在第三基底301的下表面上形成彩色滤光层303；然后在上表面上形成太阳能电池；需要说明的是，上述两步骤的顺序无先后，是可以互换的。制备太阳能的具体步骤与上一种情况相同，在此不重复赘述。
上述为另一种太阳能电池102设置在彩膜基板的透光区的情况，此时当有光照射到彩膜基板时，太阳能电池102就会吸收一定的光，而且还可以吸收到外界环境的光，将光能转化为电能进行储能，可以为显示面板的耗能部分供电。
优选地，本实施例的显示面板，其还包括：显示面板的电源模块，所述太阳能电池102的两极与所述显示面板的电源模块的两极电连接。该电源模块可以为显示面板栅极驱动电路、源极驱动电路等驱动电路中的一种电路或多种电路供电，其中，太阳能电池102与显示面板的电源模块电连接，也就是太阳能电池102给显示面板的电源模块充电，此时可以节约能源，减少功耗。
需要说明的是，上述第一、第二、第三、第四基板的上表面与下表面的是相对而言的，且是以附图中所示为基准的。本实施例只是描述了几种结构显示面板，但是不局限于上述几种情况，例如所述显示面板包括阵列基板和彩膜基板，在阵列基板的透光区与彩膜基板的透光区均设有太阳能电池102也是可以的，也可在显示面板的透光区与遮光区均设置有太阳能电池102，其中遮光区可以是彩膜基板上的黑矩阵、阵列基板上的存储电容、像素区域内的薄膜晶体管104等非透光元器件的所在位置处，只要在显示面板的透光区设置有太阳能电池102，均在本发明的保护范围内，在此不一一赘述。
实施例2
本实施例一种显示装置，其包括上述显示面板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例的显示装置中具有实施例1中的显示面板，故其能耗较低。
优选地，本实施例的显示装置还包括：背光源和背光源的电源模块，所述太阳能电池102的两极与背光源的电源模块的两极电连接。太阳能电池102与背光源的电源模块电连接，也就是太阳能电池102给背光源的电源模块充电，此时可以节约能源，减少功耗。
当然，本实施例的显示装置中还可以包括其他常规结构，如显示驱动单元等。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (11)

1.一种显示面板，其包括由子像素构成的透光区，其特征在于，至少在所述显示面板的部分透光区上设置有太阳能电池，用于给显示面板供电；
所述太阳电池的第一电极与第二电极均采用透明导电材料制成，且至少与所述透光区处的子像素颜色相同的光能够透过所述太阳能电池。
2.根据权利要求1所述的显示面板，其特征在于，所述太阳能电池还包括第一电极与第二电极之间的活性层，所述活性层由CdSe量子点组成。
3.根据权利要求2所述的显示面板，其特征在于，所述子像素包括红色子像素、绿色子像素、蓝色子像素，其中，
所述红色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在15-20nm之间，所述绿色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在8-13nm之间，所述蓝色子像素所对应透光区上的太阳能电池中CdSe量子点的粒径在2-5nm之间。
4.根据权利要求1至3中任一项所述的显示面板，其特征在于，其包括阵列基板，
所述阵列基板包括第一基底、绝缘层和薄膜晶体管，所述太阳能电池设置在第一基底上，绝缘层设置在太阳能电池上方，薄膜晶体管设置在绝缘层上方。
5.根据权利要求1至3中任一项所述的显示面板，其特征在于，其包括阵列基板，
所述阵列基板包括第一基底，所述第一基底的上表面设置有薄膜晶体管，下表面设有太阳能电池。
6.根据权利要求1至3中任一项所述的显示面板，其特征在于，其包括阵列基板，
所述阵列基板包括第一基底和第二基底，所述第一基底的上表面上设置有薄膜晶体管，所述第二基底的下表面上设置有太阳能电池，其中，所述第一基底下表面与第二基底上表面相贴合。
7.根据权利要求1至3中任一项所述的显示面板，其特征在于，其包括彩膜基板，
所述彩膜基板包括第三基底和第四基底，所述第三基底的上表面上设置有彩色滤光层，所述第四基底的下表面上设置有太阳能电池，其中，所述第三基底下表面与第四基底上表面相贴合。
8.根据权利要求1至3中任一项所述的显示面板，其特征在于，其包括彩膜基板，
所述彩膜基板包括第三基底，所述第三基底的上表面设置有太阳能电池，下表面设置有彩色滤光层。
9.根据权利要求1至3中任意一项所述的显示面板，其特征在于，还包括显示面板的电源模块，所述太阳能电池的两极与所述显示面板的电源模块的两极电连接。
10.一种显示装置，其特征在于，包括权利要求1至9中任意一项所述的显示面板。
11.根据权利要求10所述的显示装置，其特征在于，还包括背光源和背光源的电源模块，所述太阳能电池的两极与背光源的电源模块的两极电连接。
CN201310491955.7A 2013-10-18 2013-10-18 显示面板及显示装置 Pending CN103529581A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201310491955.7A CN103529581A (zh) 2013-10-18 2013-10-18 显示面板及显示装置
PCT/CN2014/077661 WO2015055004A1 (zh) 2013-10-18 2014-05-16 显示面板及其制造方法和显示装置
US14/429,992 US9507190B2 (en) 2013-10-18 2014-05-16 Display panel and method for manufacturing the same, and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310491955.7A CN103529581A (zh) 2013-10-18 2013-10-18 显示面板及显示装置

Publications (1)

Publication Number Publication Date
CN103529581A true CN103529581A (zh) 2014-01-22

Family

ID=49931710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310491955.7A Pending CN103529581A (zh) 2013-10-18 2013-10-18 显示面板及显示装置

Country Status (3)

Country Link
US (1) US9507190B2 (zh)
CN (1) CN103529581A (zh)
WO (1) WO2015055004A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015055004A1 (zh) * 2013-10-18 2015-04-23 京东方科技集团股份有限公司 显示面板及其制造方法和显示装置
WO2015158089A1 (zh) * 2014-04-16 2015-10-22 京东方科技集团股份有限公司 透明显示装置及其制作方法
CN106597721A (zh) * 2016-12-05 2017-04-26 Tcl集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103955082A (zh) * 2014-03-07 2014-07-30 京东方科技集团股份有限公司 一种液晶面板及其制作方法和显示装置
KR102602739B1 (ko) 2018-09-07 2023-11-16 삼성디스플레이 주식회사 전자 장치
CN114335201B (zh) * 2021-04-01 2023-12-19 友达光电股份有限公司 太阳能板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101930A (zh) * 2007-08-01 2008-01-09 上海芯光科技有限公司 一种高效太阳能电池光波转换纳米复合材料
CN101813849A (zh) * 2009-02-19 2010-08-25 北京京东方光电科技有限公司 彩膜基板及其制造方法和液晶面板
CN101852947A (zh) * 2009-03-31 2010-10-06 英特尔公司 用于显示设备的集成光电池
CN101995691A (zh) * 2009-08-20 2011-03-30 上海天马微电子有限公司 液晶显示装置
CN201984173U (zh) * 2010-11-24 2011-09-21 吉富新能源科技(上海)有限公司 具有透明薄膜太阳能电池的彩色滤光片及其显示装置
CN102540565A (zh) * 2012-03-20 2012-07-04 友达光电（苏州）有限公司 具有太阳能电池功能的彩色滤光基板及显示面板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090079569A (ko) * 2008-01-18 2009-07-22 삼성전자주식회사 박막 트랜지스터 기판과 이의 제조 방법
US20110155233A1 (en) * 2009-12-29 2011-06-30 Honeywell International Inc. Hybrid solar cells
KR101156434B1 (ko) * 2010-01-05 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP4844685B1 (ja) * 2010-06-23 2011-12-28 大日本印刷株式会社 有機薄膜太陽電池モジュール
CN102487042B (zh) * 2010-12-03 2014-06-11 北京京东方光电科技有限公司 阵列基板及其制造方法和检测方法、液晶面板
US8686416B2 (en) * 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
CN103529581A (zh) 2013-10-18 2014-01-22 京东方科技集团股份有限公司 显示面板及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101101930A (zh) * 2007-08-01 2008-01-09 上海芯光科技有限公司 一种高效太阳能电池光波转换纳米复合材料
CN101813849A (zh) * 2009-02-19 2010-08-25 北京京东方光电科技有限公司 彩膜基板及其制造方法和液晶面板
CN101852947A (zh) * 2009-03-31 2010-10-06 英特尔公司 用于显示设备的集成光电池
CN101995691A (zh) * 2009-08-20 2011-03-30 上海天马微电子有限公司 液晶显示装置
CN201984173U (zh) * 2010-11-24 2011-09-21 吉富新能源科技(上海)有限公司 具有透明薄膜太阳能电池的彩色滤光片及其显示装置
CN102540565A (zh) * 2012-03-20 2012-07-04 友达光电（苏州）有限公司 具有太阳能电池功能的彩色滤光基板及显示面板

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015055004A1 (zh) * 2013-10-18 2015-04-23 京东方科技集团股份有限公司 显示面板及其制造方法和显示装置
US9507190B2 (en) 2013-10-18 2016-11-29 Boe Technology Group Co., Ltd. Display panel and method for manufacturing the same, and display device
WO2015158089A1 (zh) * 2014-04-16 2015-10-22 京东方科技集团股份有限公司 透明显示装置及其制作方法
US9502479B2 (en) 2014-04-16 2016-11-22 Boe Technology Group Co., Ltd. Transparent display device and manufacturing method thereof
CN106597721A (zh) * 2016-12-05 2017-04-26 Tcl集团股份有限公司 一种显示面板、显示装置及显示面板的制作方法

Also Published As

Publication number Publication date
US9507190B2 (en) 2016-11-29
WO2015055004A1 (zh) 2015-04-23
US20150338691A1 (en) 2015-11-26

Similar Documents

Publication Publication Date Title
CN101995691B (zh) 液晶显示装置
CN101813849B (zh) 彩膜基板及其制造方法和液晶面板
JP5160662B2 (ja) ディスプレイと光電エレメントとを統合したディスプレイデバイス、およびその製造方法
CN103529581A (zh) 显示面板及显示装置
CN102109701B (zh) 整合太阳能电池模块的液晶显示器
CN101685218B (zh) 液晶显示面板阵列基板及其制造方法
US20150276999A1 (en) Color filter substrate, display device and method for manufacturing a color filter substrate
CN105761629A (zh) 一种自发电节能显示器
TW201217858A (en) Liquid crystal display integrated with solar cell module
CN103728753A (zh) 显示基板和显示装置
CN106094320A (zh) 彩膜基板及液晶显示装置
CN104571698A (zh) 一种触控面板及其制备方法、触控显示装置
US9831826B2 (en) Display substrate and display device
CN110045536A (zh) 彩膜基板和显示面板
CN206249825U (zh) 显示面板及显示装置
US8710359B2 (en) Display module
CN105304654A (zh) 一种阵列基板及其制作方法
CN205751390U (zh) 一种自发电节能显示器
CN102097035B (zh) 显示模块及应用其的太阳电池、电子书及户外广告牌
CN110895374A (zh) 显示面板及显示装置
CN109597257A (zh) 阵列基板及显示装置
WO2012032751A1 (ja) 太陽電池パネル、表示装置、及び太陽電池パネルの制御方法
CN207264710U (zh) 一种显示装置及电子设备
CN110928002A (zh) 显示模组及显示装置
CN102445804A (zh) 显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20140122