CN103441112A - Constant-current tube with low saturation voltage drop - Google Patents
Constant-current tube with low saturation voltage drop Download PDFInfo
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- CN103441112A CN103441112A CN2013103456149A CN201310345614A CN103441112A CN 103441112 A CN103441112 A CN 103441112A CN 2013103456149 A CN2013103456149 A CN 2013103456149A CN 201310345614 A CN201310345614 A CN 201310345614A CN 103441112 A CN103441112 A CN 103441112A
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- current tube
- constant
- voltage drop
- negative electrode
- saturation voltage
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- 238000003466 welding Methods 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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Abstract
The invention discloses a constant-current tube with a low saturation voltage drop. The constant-current tube is formed mainly by integrally welding a chip and a frame, then leading out pins from electrodes of the chip and conducting packaging. The constant-current tube with the low saturation voltage drop is characterized in that a negative electrode window is added to the chip, a negative electrode is led into the negative electrode window and integrally welded with the frame, and the negative electrode is led out of the frame. The constant-current tube with the low saturation voltage drop has the advantages that the distance between the negative electrode and positive electrodes is shortened, the on-resistance is reduced, and therefore the on-state saturation voltage drop of the constant-current tube is reduced.
Description
Technical field
The present invention relates to a kind of constant current tube of electronic applications, after specifically being mainly chip and frame welding and being integrated, draw respectively pin on the electrode of chip, and the constant current tube that forms of encapsulation.
Background technology
LED is a kind of luminescent device that can be directly visible ray and radiant energy by electric energy conversion, has operating voltage low, and power consumption is little, luminous efficiency is high, and emission response time is extremely short, photochromic pure, sound construction, shock resistance, vibration resistance, stable and reliable for performance, the series of characteristics such as lightweight, volume is little, and cost is low, development is advanced by leaps and bounds, and now can manufacture the versicolor high brightness of whole visible spectrum, premium quality product.Domestic red, green, orange, yellow LED output accounts for 12% of world's total amount, the industry goal of Tenth Five-Year Plan Period is to reach the ability of producing 30000000000 per year, realize the large production of LED epitaxial wafer and the chip of super brightness AiGslnP, produce red more than 1,000,000,000, orange, yellow ultra-high brightness LED tube core per year, break through the key technology of GaN material, realize the medium quantity batch processing of blue, green, white LED.It is predicted, by 2005, the market demand of LED was about 2,000 hundred million in the world, and sales volume reaches 80,000,000,000 dollars.
In recent years, the luminous efficiency of LED increases by 100 times, cost descends 10 times, be widely used in the large tracts of land picture and text and show full-color screen, state indication, sign illumination, signal show, the backlight of liquid crystal display, Combined tail lamps of automobile and room light etc. aspect, its development prospect attracts the whole world large producer of illumination all successively to add in LED light source and the market development.What have development and application prospect is white light LEDs, economy as the solid state lighting device is remarkable, and environmental, just progressively replaces traditional incandescent lamp, world's annual growth is more than 20%, and the semiconductor lighting plan has all been released in U.S., day, Europe and tw Taiwan.At present, common white light LEDs luminous efficiency 25lm/W, the expert estimates may surpass 300lm/W in 2005.The heat dissipation characteristics of power-type LED excellence and optical characteristics more can adapt to general lighting field ，Bei academia and industrial circle thinks that LED enters the only way of illumination market.For replace fluorescent lamps, white light LEDs must have the light efficiency of 150-200lm/W, and the price of every Im should be starkly lower than 0.015/Im, and (present price is 0.25 $/Im approximately, red LED is 0.065/Im), realize this goal and still have a lot of technical problems to need research, but overcome, to address these problems not be very remote thing.By the solid luminescence physics principle, the luminous efficiency of LED can be similar to 100%, and therefore, LED is described as the 21 century new light sources, be expected to become after incandescent lamp, fluorescent lamp, high-intensity gas discharge lamp the 4th generation light source.
Therefore, the effect of LED therefore, the performance of driving power improves also urgent demand.And constant current tube is as one of parts of driving power, it can export constant electric current in very wide voltage range, and has very high motional impedance.Due to the crossing current performance good, price is low, easy to use, be widely used in the protective circuit of constant-current source, source of stable pressure, amplifier and electronic instrument.
Constant current tube related to the present invention has following several packing forms: TO-126; TO-92; TO-220; DO-15, DO-41, DO-27, SMA, SMB, SMC.
But current constant current tube has a defect: saturation voltage drop is between 3-5V.
Summary of the invention
Main task of the present invention is to provide a kind of constant current tube of low saturation voltage drop, and specifically a kind of saturation voltage drop can be controlled at the constant current tube of 1.1-3.5V.
In order to solve above technical problem, the constant current tube of a kind of low saturation voltage drop of the present invention, after being mainly chip and frame welding and being integrated, draw respectively pin on the electrode of chip, and the encapsulation formation, it is characterized in that: increase the negative electrode window on described chip, negative electrode is caused in the negative electrode window, with frame welding, be integrated, described negative electrode is drawn from framework.
The invention has the advantages that: shortened the distance between both positive and negative polarity, reduced conducting resistance, thereby reduced the conducting saturation voltage drop of constant current tube.
The accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is end view of the present invention.
The Performance Detection curve chart that Fig. 3 is different conditions of the present invention.
Embodiment
It is 5-10V that voltage is used in constant current tube suggestion of the present invention, and can bear voltage is 70V.
Electric current is that 40mA is following, and packing forms is TO-92, can be also DO-41, DO-15 and SMA, SMB.The product of 40-150 mA be take TO-126, DO-27 and SMC as main.The above product of 150mA mainly encapsulates with TO-220.
The constant current tube of above all different packing forms, its internal structure is identical, all as shown in the figure:
Constant current tube of the present invention encapsulates inner structure: the substrate of chip 1 and framework 6 are welded as a whole.Establish positive pole 2, negative pole 3 on the front of chip 1.Anodal 2 are located on chip 1, with pin 8, draw; Negative pole 3 is located at chip 1 below, after negative pole 3 use wire jumpers 5 are connected as one with framework 6, in framework place welding pin 7, draws.Compare with traditional structure, there is no negative pole 3 on the conventional package chip, also do not have negative pole 3 and substrate to connect together.
The constant current tube of above structure is detected under different voltage, and the curve synoptic diagram of detection as shown in Figure 3, is arranged the result of Fig. 3, obtains result as shown in table 1:
Claims (1)
1. the constant current tube of a low saturation voltage drop, after being mainly chip and frame welding and being integrated, draw respectively pin on the electrode of chip, and encapsulation forms, it is characterized in that: increase the negative electrode window on described chip, negative electrode is caused in the negative electrode window, be integrated with frame welding, described negative electrode is drawn from framework.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345614.9A CN103441112B (en) | 2013-08-09 | 2013-08-09 | A kind of constant current tube of low saturation voltage drop |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310345614.9A CN103441112B (en) | 2013-08-09 | 2013-08-09 | A kind of constant current tube of low saturation voltage drop |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103441112A true CN103441112A (en) | 2013-12-11 |
| CN103441112B CN103441112B (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310345614.9A Active CN103441112B (en) | 2013-08-09 | 2013-08-09 | A kind of constant current tube of low saturation voltage drop |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201066691Y (en) * | 2007-01-15 | 2008-05-28 | 贵州大学 | N channel high-power semiconductor constant current diode |
| CN101924141A (en) * | 2010-09-07 | 2010-12-22 | 如皋市日鑫电子有限公司 | High-power diode suitable for DO-27 and A-201AD package structures |
| CN102487088A (en) * | 2010-12-01 | 2012-06-06 | 贵州煜立电子科技有限公司 | Constant current diode with vertical channels |
-
2013
- 2013-08-09 CN CN201310345614.9A patent/CN103441112B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201066691Y (en) * | 2007-01-15 | 2008-05-28 | 贵州大学 | N channel high-power semiconductor constant current diode |
| CN101924141A (en) * | 2010-09-07 | 2010-12-22 | 如皋市日鑫电子有限公司 | High-power diode suitable for DO-27 and A-201AD package structures |
| CN102487088A (en) * | 2010-12-01 | 2012-06-06 | 贵州煜立电子科技有限公司 | Constant current diode with vertical channels |
Non-Patent Citations (1)
| Title |
|---|
| 汪西川: "《常用新颖电子器件及其应用》", 31 December 2012, article "恒流二极管", pages: 9 * |
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| CN103441112B (en) | 2016-03-02 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wu Yahong Inventor after: Lu Guohua Inventor after: Lu Bingqi Inventor before: Wu Yahong Inventor before: Lu Guohua Inventor before: Zhong Shengming |
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| COR | Change of bibliographic data | ||
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Effective date of registration: 20160125 Address after: Rugao City, Jiangsu province 226500 Nantong city under the original town of Peach Road No. 186 Building 2 Applicant after: Rugao RiXin Electronic Co., Ltd. Address before: 226500, Jiangsu, Nantong City, Rugao City, the original industrial concentration zone Applicant before: Rugao RiXin Electronic Co., Ltd. |
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Effective date of registration: 20191121 Address after: Room 1,020, Nanxun Science and Technology Pioneering Park, No. 666 Chaoyang Road, Nanxun District, Huzhou City, Zhejiang Province, 313000 Patentee after: Huzhou You Yan Intellectual Property Service Co., Ltd. Address before: Rugao City, Jiangsu province 226500 Nantong city under the original town of Peach Road No. 186 Building 2 Patentee before: Rugao Shengtai Electronics Co., Ltd. |
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Effective date of registration: 20211201 Address after: 264200 No. 369-11, Shuangdao Road, Weihai high district, Weihai City, Shandong Province Patentee after: Weihai Regional Innovation Center Co.,Ltd. Address before: 313000 room 1020, science and Technology Pioneer Park, 666 Chaoyang Road, Nanxun Town, Nanxun District, Huzhou, Zhejiang. Patentee before: Huzhou You Yan Intellectual Property Service Co.,Ltd. |