CN201066691Y - N channel high-power semiconductor constant current diode - Google Patents
N channel high-power semiconductor constant current diode Download PDFInfo
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- CN201066691Y CN201066691Y CNU2007202000158U CN200720200015U CN201066691Y CN 201066691 Y CN201066691 Y CN 201066691Y CN U2007202000158 U CNU2007202000158 U CN U2007202000158U CN 200720200015 U CN200720200015 U CN 200720200015U CN 201066691 Y CN201066691 Y CN 201066691Y
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Abstract
The utility model discloses an N-channel high-power semiconductive constant-current diode. The utility model includes an N-type semiconductive underlay (2); an electrode (1) is connected under the N-type semiconductive underlay (2); an N-type channel (4) is arranged between P-type semiconductive regions (6) and (3); the N-type channel (4) is provided with an N<+> conductor (7); the P-type semiconductive region (3), the N<+> conductive region (7) and the P-type semiconductive region (6) are connected by an electrode (8); the P-type semiconductive region (3) is provided with an N<+> conductor (5) and the N<+> conductor (5) is connected with an electrode (9). The utility model is characterized in that the constant-current feature is achieved through the physical process of semiconductive component structure. The utility model has the advantages of the function that the constant-current circuit is achieved through utilizing the semiconductor physical feature, the simple structure, and the direct constant-current drive of the load.
Description
Technical field
The utility model relates to a kind of N channel high power semiconductor constant-current diode that utilizes the physical process realization constant-current characteristic of semiconductor structure, belongs to two end technical field of semiconductor device.
Background technology
In the prior art, constant current supply is a kind of technology commonly used in electronic equipment and the device, generally adopts electronic module or integrated circuit to realize.Constant-current diode is a kind of semiconductor device of realizing constant-current source.International and domestic current regulator diode all is little electric current, low power product (output current: 0.5mA-10mA usually at present; ), the reference current that is mainly used in the electronic circuit is set.Because electric current, power are too small, can not directly drive load.
Summary of the invention
The purpose of this utility model is: provide a kind of N channel high power semiconductor constant-current diode that utilizes the Semiconductor Physics characteristic, can directly drive load, to overcome the deficiencies in the prior art.
N channel high power semiconductor constant-current diode of the present utility model, it comprises N type semiconductor substrate (2), under N type semiconductor substrate (2), be connected with metal electrode (1), on N type semiconductor substrate (2), be provided with P type semiconductor zone (6) and P type semiconductor zone (3), between P type semiconductor zone (6) and P type semiconductor zone (3), be provided with N type raceway groove (4), on N type raceway groove (4), be provided with N
+N-type semiconductor N (7), P type semiconductor zone (3), N
+N-type semiconductor N zone (7) is connected by metal electrode (8) with P type semiconductor zone (6), is provided with N on P type semiconductor zone (3)
+N-type semiconductor N (5), N
+N-type semiconductor N (5) is connected with metal electrode (9).The output current of metal electrode (9) is 20mA-1A.
Characteristics of the present utility model are the physical process realization constant-current characteristicses by semiconductor device structure, are not the technology of integrated circuit and electronic module (assembly).Electronic module assembly is to adopt electronic device (comprising integrated circuit) to press the circuit mode assembling on circuit board to constitute, and volume is bigger.Integrated circuit is electronic devices and components to be produced on the block semiconductor material complex structure of integrated circuit, particularly high-power integrated circuit by circuit mode.Integrated circuit and electronic module (assembly) all are the multiport electronic units, install and use inconvenience.The utility model utilizes technotron JFET as small current constant-current source, provides constant base current to the bipolar transistor of serving as current expansion, amplifies (expansion) through bipolar transistor proportional (linearity) and becomes big constant current.On semi-conducting material, adopt semiconductor device structure to realize its physical function.Compare with electronic module (assembly) technology with existing integrated circuits, the function that the utlity model has and utilize the Semiconductor Physics characteristic, realizes constant-current circuit, and it is simple in structure, adopt the directly advantage of constant-current driving load of current expansion method, find expression in some technical characterictics of existing diode, also can be used as constant-current power supply and directly drive load.
Description of drawings
Accompanying drawing 1 is a structural representation of the present utility model;
Accompanying drawing 2 is an equivalent circuit diagram of the present utility model;
Embodiment
Embodiment of the present utility model: on N type semiconductor substrate (2), diffuse out a P type semiconductor zone (6) and a P type semiconductor zone (3), between P type semiconductor zone (6) and P type semiconductor zone (3), form N type semiconductor (4) as N type channel junction field-effect pipe JFET.On N type semiconductor (4) raceway groove, diffuse out N
+N-type semiconductor N zone (7), by metal electrode (8) with P type semiconductor zone (3), N
+N-type semiconductor N zone (7) and P type semiconductor zone (6) link together, and form small current constant-current source.On P type semiconductor zone (3), diffuse out N
+N-type semiconductor N (5), N
+N-type semiconductor N (5) connection metal electrode (9) and lead are as negative pole.Connect metal electrode (1) and lead positive pole below the N type semiconductor substrate (2) as current regulator diode.Above semi-conducting material, be provided with layer of silicon dioxide (10).
The utility model equivalent electric circuit as shown in Figure 2, I1 is a small current constant-current source, through the current expansion of current amplification unit with I1, forms big electric current constant-current source.The utility model adopts N type semiconductor (2) as collector electrode, N type semiconductor raceway groove (4) is left as N type channel junction field-effect pipe JFET as grid in P type semiconductor zone (6) on the N type semiconductor (2) and P type semiconductor zone (3) between 2 area of grid.N on the P type semiconductor zone (3)
+N-type semiconductor N (5) is as the emitter of bipolar transistor, and P type semiconductor zone (3) are not only as the grid of N type channel junction field-effect pipe JFET but also as the base stage of bipolar transistor, N type semiconductor substrate (2) is as the bipolar transistor collector electrode.Realize high-power constant current output by above-mentioned semiconductor structure.
Device property of the present utility model is equivalent to a high-power constant-current diode (as shown in Figure 3), the output current of metal electrode (9) can reach the output constant current of 20mA-1A, and current common constant-current diode can only be exported the electric current of 0.5mA-10mA.
Claims (2)
1. N channel high power semiconductor constant-current diode, it comprises N type semiconductor substrate (2), it is characterized in that: under N type semiconductor substrate (2), be connected with metal electrode (1), on N type semiconductor substrate (2), be provided with P type semiconductor zone (6) and P type semiconductor zone (3), between P type semiconductor zone (6) and P type semiconductor zone (3), be provided with N type raceway groove (4), on N type raceway groove (4), be provided with N+ N-type semiconductor N (7), P type semiconductor zone (3), N+ N-type semiconductor N zone (7) is connected by metal electrode (8) with P type semiconductor zone (6), be provided with N+ N-type semiconductor N (5) on P type semiconductor zone (3), N+ N-type semiconductor N (5) is connected with metal electrode (9).
2. N channel high power semiconductor constant-current diode as claimed in claim 1 is characterized in that: the output current of metal electrode (9) is 20mA-1A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007202000158U CN201066691Y (en) | 2007-01-15 | 2007-01-15 | N channel high-power semiconductor constant current diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007202000158U CN201066691Y (en) | 2007-01-15 | 2007-01-15 | N channel high-power semiconductor constant current diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201066691Y true CN201066691Y (en) | 2008-05-28 |
Family
ID=39483874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007202000158U Expired - Fee Related CN201066691Y (en) | 2007-01-15 | 2007-01-15 | N channel high-power semiconductor constant current diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201066691Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441112A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | Constant-current tube with low saturation voltage drop |
| CN104638024A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof |
| CN105047724A (en) * | 2015-09-09 | 2015-11-11 | 电子科技大学 | Transverse current regulator diode and manufacturing method thereof |
-
2007
- 2007-01-15 CN CNU2007202000158U patent/CN201066691Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441112A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | Constant-current tube with low saturation voltage drop |
| CN103441112B (en) * | 2013-08-09 | 2016-03-02 | 如皋市晟太电子有限公司 | A kind of constant current tube of low saturation voltage drop |
| CN104638024A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof |
| CN104638024B (en) * | 2015-02-15 | 2018-01-12 | 电子科技大学 | A kind of horizontal current regulator diode and its manufacture method based on SOI |
| CN105047724A (en) * | 2015-09-09 | 2015-11-11 | 电子科技大学 | Transverse current regulator diode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080528 Termination date: 20140115 |