CN103165285B - A kind of manufacture method of film capacitor - Google Patents
A kind of manufacture method of film capacitor Download PDFInfo
- Publication number
- CN103165285B CN103165285B CN201310065920.7A CN201310065920A CN103165285B CN 103165285 B CN103165285 B CN 103165285B CN 201310065920 A CN201310065920 A CN 201310065920A CN 103165285 B CN103165285 B CN 103165285B
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- CN
- China
- Prior art keywords
- weight
- film capacitor
- magnetron sputtering
- manufacture method
- dielectric layer
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- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 18
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910020684 PbZr Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 6
- 239000011888 foil Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052694 Berkelium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PWVKJRSRVJTHTR-UHFFFAOYSA-N berkelium atom Chemical compound [Bk] PWVKJRSRVJTHTR-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
The invention discloses a kind of film capacitor, it has three-decker, is respectively ni substrate, dielectric layer and electrode layer from bottom to top.
Description
Technical field
The present invention relates to a kind of manufacture method of capacitor, particularly relate to a kind of manufacture method of jumbo film capacitor.
Background technology
In existing film capacitor, due to the lower thickness of dielectric layer, therefore for improving the static capacity density of dielectric layer, and material high for dielectric constant is used for dielectric layer.As the material that dielectric constant is high, existing general employing perocskite type oxide.Such as, lead zirconate titanate (PZT), berkelium lanthanium titanate lead (PLZT), lead magnesio-niobate (PMN), barium strontium titanate (BST) etc.This perocskite type oxide obtains by presoma annealing is made its crystallization, its dielectric constant is improved by high temperature annealing, but, in order to improve dielectric constant, sometimes raising anneal temperature, when sometimes extending such change manufacturing conditions such as annealing time, the capacity that there is film capacitor can not improve and the problem of leakage current increase.
Summary of the invention:
The present invention proposes a kind of manufacture method of film capacitor, in turn include the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) by after above-mentioned raw materials melting, be rolled into paillon foil, then this paillon foil annealed, thus made ni substrate 1; The thickness of this ni substrate 1 is 100-300 micron, is preferably 200 microns.
(3) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein x value is: 0<x<1, and preferred x is 0.05≤x≤0.85, and wherein calcining heat is 950 DEG C-1200 DEG C, and calcination time is 2.5-3 hour;
(4) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, in inert gas environment, PZT target as sputter is deposited on described ni substrate 1, thus form PbZr
1-xti
xo
3dielectric layer 2; The thickness of this dielectric layer 2 is 1-5 micron, preferably 2 microns.
(5) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, in inert gas environment by metal material sputtering sedimentation on described dielectric layer 2, thus formed electrode layer 3, the thickness of this electrode layer 3 is 100-200 micron, preferably 120 microns.
Accompanying drawing explanation
The cross-sectional view of the film capacitor obtained by the manufacture method that Fig. 1 proposes for the present invention.
Embodiment:
Below by embodiment, the present invention is described in detail.
See Fig. 1, the manufacture method of the film capacitor that the present invention proposes in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight and the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) by after above-mentioned raw materials melting, be rolled into paillon foil, then this paillon foil annealed, thus made ni substrate 1; The thickness of this ni substrate 1 is 100-300 micron, is preferably 200 microns.
(3) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein calcining heat is 950 DEG C-1200 DEG C, and calcination time is 2.5-3 hour;
(4) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, in inert gas environment, PZT target as sputter is deposited on described ni substrate 1, thus form PbZr
1-xti
xo
3dielectric layer 2, wherein x value is: 0<x<1, and preferred x is 0.05≤x≤0.85; The thickness of this dielectric layer 2 is 1-5 micron, preferably 2 microns.
(5) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, in inert gas environment by metal material sputtering sedimentation on described dielectric layer 2, thus formed electrode layer 3, the thickness of this electrode layer 3 is 100-200 micron, preferably 120 microns.
Wherein, in step (4) and (5), the vacuum degree of rf magnetron sputtering reative cell is all 10-5 Pascal; And in step (4), the radio-frequency power of rf magnetron sputtering is 150-200W, sputtering time is 60 minutes; In step (5), the radio-frequency power 100-150W of rf magnetron sputtering, sputtering time is 120 minutes.
Above execution mode is to invention has been detailed introduction, but above-mentioned execution mode is not intended to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (6)
1. a manufacture method for film capacitor, the method in turn includes the following steps:
(1) raw material of following proportioning is prepared: be more than or equal to the nickel ingot of 99.98 % by weight, the copper of 0.001-0.002 % by weight, the manganese of 0.0005-0.0008 % by weight, the aluminium of 0.005-0.008 % by weight, the chromium of 0.0005-0.001 % by weight, the iron of 0.004-0.006 % by weight, the silicon of 0.0005-0.0012 % by weight, the antimony of 0.001-0.002 % by weight and the tantalum of 0.001-0.002 % by weight;
(2) by after above-mentioned raw materials melting, be rolled into paillon foil, then this paillon foil annealed, thus make ni substrate;
(3) according to Tetragonal lead zirconate titanate PbZr
1-xti
xo
3molar ratio be configured lead oxide PbO, zirconium dioxide ZrO
2with titanium dioxide TiO
2powder is calcined, thus sinters PZT target into, and wherein x value is: 0.05≤x≤0.85;
(4) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, in inert gas environment, PZT target as sputter is deposited on described ni substrate, thus form PbZr
1-xti
xo
3dielectric layer;
(5) in magnetron sputtering reative cell, utilize radio frequency magnetron sputtering method, thus form electrode layer in inert gas environment by metal material sputtering sedimentation on said dielectric layer.
2. the manufacture method of film capacitor as claimed in claim 1, is characterized in that:
The thickness of described ni substrate is 100-300 micron.
3. the manufacture method of film capacitor as claimed in claim 2, is characterized in that:
Wherein in step (3), calcining heat is 950 DEG C-1200 DEG C, and calcination time is 2.5-3 hour.
4. the manufacture method of film capacitor as claimed in claim 1, is characterized in that:
Wherein, the thickness of this dielectric layer is 1-5 micron.
5. the manufacture method of film capacitor as claimed in claim 1, is characterized in that:
The thickness of this electrode layer 3 is 100-200 micron.
6. the manufacture method of film capacitor as claimed in claim 1, is characterized in that:
Wherein, in step (4) and (5), the vacuum degree of rf magnetron sputtering reative cell is all 10
-5pascal; And in step (4), the radio-frequency power of rf magnetron sputtering is 150-200W, and sputtering time is 60 minutes; In step (5), the radio-frequency power 100-150W of rf magnetron sputtering, sputtering time is 120 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065920.7A CN103165285B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of film capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310065920.7A CN103165285B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103165285A CN103165285A (en) | 2013-06-19 |
| CN103165285B true CN103165285B (en) | 2016-01-06 |
Family
ID=48588285
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310065920.7A Expired - Fee Related CN103165285B (en) | 2013-03-01 | 2013-03-01 | A kind of manufacture method of film capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103165285B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103679258B (en) * | 2013-12-31 | 2016-08-17 | 北京豹驰智能科技有限公司 | A kind of RF base card of embedded laminates wire type thin film capacitor |
| CN108470622B (en) * | 2018-04-07 | 2020-02-14 | 汕头市信音电子科技有限公司 | High-frequency voltage-resistant film capacitor |
| CN117059399B (en) * | 2023-10-11 | 2024-01-26 | 北京航空航天大学宁波创新研究院 | Preparation method of dielectric capacitor based on roll-to-roll and dielectric capacitor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
| CN1974118A (en) * | 2005-11-28 | 2007-06-06 | 镇江鼎胜铝业有限公司 | Aluminium strip for capacitor shell |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8414962B2 (en) * | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
-
2013
- 2013-03-01 CN CN201310065920.7A patent/CN103165285B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
| CN1974118A (en) * | 2005-11-28 | 2007-06-06 | 镇江鼎胜铝业有限公司 | Aluminium strip for capacitor shell |
| CN101047067B (en) * | 2006-03-30 | 2012-06-20 | Tdk株式会社 | Thin film capacitor and method of manufacturing the thin film capacitor |
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| Publication number | Publication date |
|---|---|
| CN103165285A (en) | 2013-06-19 |
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Granted publication date: 20160106 |
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