CN103069563B - 用于制造至少一个光电子半导体器件的方法 - Google Patents
用于制造至少一个光电子半导体器件的方法 Download PDFInfo
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Abstract
本发明提出一种用于制造至少一个光电子半导体器件的方法,所述方法具有下述步骤:a)提供载体(1),所述载体具有上侧(12)、与所述载体(1)的所述上侧(12)相对置的下侧(11)、以及在横向方向(L)上并排设置在所述上侧(12)上的多个连接面(13);b)施加多个光电子器件(2),所述光电子器件分别具有背离于所述载体(1)的至少一个接触面(22);c)将保护元件(41、42)施加到所述接触面(22)和所述连接面(13)上;d)将至少一个电绝缘层(3)施加到所述载体(1)的、所述接触面(22)的以及所述保护元件(4)的暴露的位置上;e)移除所述保护元件(41、42),由此在所述电绝缘层(3)中产生开口(51、52);f)将可导电的材料(8)设置在所述电绝缘层(3)上并且至少局部地设置在所述开口(5)中,其中所述可导电的材料(8)分别将接触面(22)和与所述接触面相关联的连接面(13)导电地连接。
Description
技术领域
本发明提出一种用于制造至少一个光电子半导体器件的方法以及一种光电子半导体器件。
背景技术
发明内容
待实现的目的在于,提出一种用于制造光电子半导体器件的方法,所述方法是低成本的。
根据所述方法的至少一个实施方式,在第一步骤中提供有载体,所述载体具有上侧和与载体的上侧相对置的下侧。载体能够是电路板或金属支架(引线框架)。同样可设想的是,载体构造为柔性的,并且例如构造为薄膜。载体能够用例如为金属的导电材料和/或例如为热固性或热塑性材料的电绝缘的材料构成,和/或也能够用陶瓷材料构成。
在上侧和下侧上分别构造有面,所述面由载体外表面的一部分构成。在下侧上的面是载体外表面的在载体的已安装状态下朝向接触载体——接触载体例如是电路板——的一部分。
例如在载体的下侧上的面是安装面,所述安装面能够用于将之后的半导体器件安装在接触载体上。此外,所述载体还具有在横向方向上并排设置在上侧上的多个连接面。在本文中,在“横向方向”上意味着,平行于载体的主延伸方向的方向。“并排”意味着,连接位置在横向方向上彼此间隔开地设置。
根据所述方法的至少一个实施方式,在下一步骤中将在横向方向上彼此间隔开地设置的多个光电子器件施加在载体的上侧上。所述光电子器件分别具有背离于所述载体的至少一个接触面。例如在横向方向上在各个光电子器件之间存在间隙。在载体的俯视图中,间隙由两个分别彼此邻接的光电子器件的侧面和载体的朝向所述器件的安装面所限定。至少一个接触面用于光电子半导体器件的电接触,并且由例如为金属的可导电的材料制成。优选的是,光电子器件的每个接触面与载体的连接面明确地或一一对应地相关联。例如,所述连接面和所述光电子器件在横向方向上并排设置。换句话说,连接面相应地和光电子器件的与所述连接面相关联的接触面相邻。例如,光电子器件借助背离于接触面的外表面被压接、焊接或导电地粘接在载体的接触位置上。光电子器件能够是接收辐射的或发射辐射的半导体芯片。所述半导体芯片例如是荧光二极管芯片(Lumineszenzdiodenchip)。所述荧光二极管芯片能够是发光二极管芯片(Leuchtdiodenchip)或激光二极管芯片。
根据所述方法的至少一个实施方式,在下一步骤中保护元件被施加到接触面和连接面上。也就是说,保护元件至少局部地与连接面和接触面直接接触。在载体的俯视图中,保护元件在垂直方向上至少局部地与接触面和连接面重合。在此,“垂直方向”表示垂直于横向方向的方向。
根据所述方法的至少一个实施方式,在下一步骤中至少一个电绝缘层被施加到载体的、接触面的以及保护元件的暴露的位置上。在电绝缘层和载体的、接触面的以及保护元件的暴露的位置之间优选既不构成缝隙也不构成中断。
根据所述方法的至少一个实施方式,在下一步骤中移除保护元件,由此在电绝缘层中产生开口。所述开口分别在垂直方向上延伸完全穿过电绝缘层。所述开口例如具有至少一个侧面。所述开口的至少一个侧面至少局部地由电绝缘层构成。
根据所述方法的至少一个实施方式,在下一步骤中将可导电的材料设置在电绝缘层上并且至少局部地设置在开口中,其中所述可导电的材料分别将接触面和与所述接触面相关联的连接面导电地连接。也就是说,可导电的材料分别将光电子器件和载体的与所述器件相关联的连接面导电地连接,并且在此,在光电子器件和连接面之间至少局部地在电绝缘层的背离于载体的上侧上延伸。在此,所述可导电的材料能够局部地直接设置在电绝缘层的外表面上。例如,可导电的材料由金属或可导电的粘合剂构成。优选的是,在光电子器件和载体的与所述光电子器件相关联的连接面之间的导电连接部完全由可导电的材料构成。例如,所述开口被可导电的材料完全填满。
根据所述方法的至少一个实施方式,在第一步骤中提供有载体,所述载体具有上侧、与载体的上侧相对置的下侧、以及在横向方向上并排设置在上侧上的多个连接面。在下一步骤中,将在横向方向上彼此间隔开地设置的多个光电子器件设置在载体的上侧上,其中所述光电子器件分别具有背离于载体的至少一个接触面。在下一步骤中将保护元件施加到接触面和连接面上。在另一步骤中,将至少一个电绝缘层施加到载体的、接触面的以及保护元件的暴露的位置上。此外,在下一步骤中将保护元件移除,由此在电绝缘层中产生开口。在下一步骤中将可导电的材料设置在电绝缘层上并且至少局部地设置在开口中,其中可导电的材料分别将接触面和与所述接触面相关联的连接面导电地连接。
在此,这里所说明的用于制造光电子半导体器件的方法还基于以下知识,即穿过电绝缘层接触的光电子半导体器件的制造会是高成本的。为了使例如光电子器件的被电绝缘层覆盖的接触部暴露出来,能够在所述位置上借助于材料去除例如通过钻孔来移除电绝缘层。在移除材料之后,接触面露出,并且能够从外部被电接触。但是,接触面的这样的之后的露出会是高成本的且耗时的。此外通过这类材料去除,光电子器件的接触面会受到损伤。
现在,为了提出一种用于制造至少一个光电子半导体器件的低成本的且耗时少的方法,在这里所说明的方法还采用下述思想,即在将电绝缘层中的一个施加到光电子器件上之前,将保护元件设置在光电子器件的相应的接触部上。换句话说,所述接触部至少局部地被保护元件覆盖。现在,如果在下一步骤中将电绝缘层施加到光电子器件的暴露的位置上,那么接触面与电绝缘层至少局部地不直接接触。因此,在下一步骤中能够将保护元件从接触面移除。在移除保护元件之后,在电绝缘层中引入开口,因此接触面能够至少局部地暴露出来,并且能够通过所述开口从外部被接触。换句话说,保护元件代替了在电绝缘层中在接触面之上的材料去除。这类方法不仅是低成本的和更少耗时的,而且对于接触面而言是特别保护材料的,因为不必再移除电绝缘层以暴露出接触面。在这里所说明的方法同样避免了例如在电绝缘层的开口中的、耗费的再清洁过程。此外,所述方法在生产流程中能够是灵活的,因为例如能够逐步地施加保护元件。有利的是,在本方法中接触面不会被例如高能量的激光损伤。通过避免在接触面上的表面损伤,接触面能够被可靠地接通,因此之后的半导体器件的光学输出功率被提高。
根据至少一个实施方式,电绝缘层是反射辐射的或者吸收辐射的。“反射辐射”尤其意味着,电绝缘层反射至少至80%的,优选最多至90%的射到其上的光。对于外部观察者而言,电绝缘层例如显现出白色。为此,例如在电绝缘层中引入反射辐射的颗粒,所述反射辐射的颗粒例如由材料TiO2、BaSo4、ZnO或AlxOy中的至少一种构成或者包含上述材料中的一种。在吸收辐射的电绝缘层中,对于外部观察者而言,电绝缘层能够显现出黑色或彩色。因此,例如在电绝缘层中引入碳黑颗粒。
根据至少一个实施方式,电绝缘层是通过浇注施加的浇注体。为此,例如电绝缘层借助于浇注和紧接着的硬化而施加到载体的、接触面的以及保护元件的暴露的位置上。
根据至少一个实施方式,保护元件中的至少一个由半导体材料、陶瓷材料、塑料材料中的至少一种制成,或者包含上述材料中的至少一种。
根据至少一个实施方式,借助于喷射、层压、点胶、丝网印刷、喷涂工艺中的至少一种来施加保护元件。例如,在喷射时压印所述电绝缘层。在点胶的情况下可设想的是,例如借助于滴管仪器以滴状物的形式来施加电绝缘层。
根据至少一个实施方式,至少一个保护元件的横向延展部从保护元件背离于载体的侧起沿朝向载体的下侧的方向缩小。“横向延展部”表示相应的保护元件的两个点之间的最大间距,所述两个点在横向方向上位于同一平面中。如果保护元件在俯视图中例如是圆形的,那么横向延展部就是直径。例如,保护元件中的至少一个在侧视图中是锥形的。那么,保护元件中的至少一个从其背离于载体的侧起沿朝向载体的下侧的方向上逐渐变窄。
根据所述方法的至少一个实施方式,在步骤d)之前将保护元件在载体的上侧上沿着分割线施加在载体上。在此,也在移除保护元件之后在分割线的区域中产生其它开口。
根据所述方法的至少一个实施方式,在移除保护元件之后,沿着分割线将载体分割为单独的光电子半导体器件。因为在分割线的区域中移除了电绝缘层,所以必须仅还通过载体分割。因此能够放弃耗费的并且不太保护材料的分离过程。换句话说,能够放弃用于分割的、耗时且耗费的过程。这导致成本节约以及光电子半导体器件的更快的生产。
根据至少一个实施方式,保护元件与电绝缘层在垂直方向上齐平。也就是说,在保护元件和电绝缘层之间在横向方向上既不构成缝隙也不构成中断。例如,保护元件和电绝缘层一起构成连续的并且不间断的平面。优选的是,保护元件是从外部可见的。
根据至少一个实施方式,在步骤d)之前将至少一个转换元件施加到光电子器件的辐射穿透面上。通过辐射穿透面,将例如在光电子器件内产生的电磁辐射从光电子器件耦合输出,或者由光电子器件检测穿过辐射穿透面进入光电子器件中的电磁辐射。转换元件用于将在光电子器件内产生的初级电磁辐射至少部分地转换为其它波长的电磁辐射。例如,将所述转换元件粘贴在辐射穿透面上。
根据所述方法的至少一个实施方式,在步骤d)之前将保护层施加到光电子器件的辐射穿透面上,所述保护层至少局部地覆盖辐射穿透面,其中,在步骤d)之后移除所述保护层,由此在电绝缘层中产生窗口。所述保护层例如被直接施加到光电子器件的辐射穿透面上,并且至少局部地覆盖所述辐射穿透面。在步骤d)之后,在将保护层施加到辐射穿透面上的位置上,电绝缘层不与光电子器件直接接触。换句话说,在所述位置上保护层被设置在辐射穿透面和电绝缘层之间。在施加电绝缘层之后,能够从保护层例如借助于高能量的激光,再次从保护层将所述电绝缘层移除。紧接着也能够从光电子器件的辐射穿透面移除保护层。保护层的移除能够借助于例如使用氢氧化钾(也称作KOH)刻蚀保护层来进行。例如,在移除保护层后所产生的在电绝缘层中的窗口由至少一个侧面、一个底面和一个与所述底面相对置的顶面构成。例如,所述侧面完全由电绝缘层构成,其中所述底面例如能够完全由光电子器件构成。可设想的是,保护层由如保护元件相同的材料制成。在本文中“相同的材料”意味着,保护层的材料和保护元件的材料是一致的。同样,保护层能够通过如施加保护元件的相同的方法来施加。
根据所述方法的至少一个实施方式,在所述窗口中设置有至少一个转换元件和/或另一浇注体,其中所述另一浇注体包含至少一种荧光转换材料。所述荧光转换材料用于将光电子器件内所产生的初级电磁辐射至少部分地转换为其它波长的电磁辐射。
此外,本发明还提出一种光电子半导体器件。
光电子半导体器件例如能够借助于在这里所说明的方法来制造,如其结合上述一个或多个实施方式所说明的。也就是说,为在这里所说明的方法而阐述的特征也为在这里所说明的光电子半导体器件公开,并且反之亦然。
根据至少一个实施方式,光电子半导体器件包括载体,所述载体具有上侧、与所述载体的上侧相对置的下侧、以及设置在上侧上的至少一个连接面。
根据至少一个实施方式,光电子半导体器件包括设置在载体的上侧上的至少一个光电子器件,所述光电子器件具有背离于载体的至少一个接触面。
根据至少一个实施方式,光电子半导体器件包括至少一个电绝缘层,所述电绝缘层施加在载体的和光电子器件的暴露的位置上。例如,所述电绝缘层形状配合地覆盖光电子器件所有的暴露位置。
根据至少一个实施方式,光电子半导体器件包括在连接面和接触面之上的、在横向方向上彼此间隔开地设置的、在电绝缘层中的至少两个开口。也就是说,在垂直方向上连接面和接触面至少局部地与开口重合,并且在所述位置上不具有电绝缘层。
根据至少一个实施方式,光电子半导体器件包括可导电的材料,所述可导电的材料设置在电绝缘层上,并且至少局部地设置在开口中。
根据至少一个实施方式,开口中的至少一个的横向延展部从电绝缘层背离于载体的侧起沿朝向载体的下侧的方向缩小。在侧视图中开口能够是锥形的。尤其不借助于材料去除在电绝缘层中产生开口。例如,开口、接触面和连接面不具有表面机械损伤。开口的侧面,例如附加的还有接触面和连接面的外表面尤其不具有例如呈表面热损伤的形式的材料去除的痕迹。因此也就是说,不借助于高能量的激光处理和/或损伤所述侧面和外表面。换句话说,借助于在这里所说明的、从电绝缘层被移除的保护元件来产生所述开口。
根据至少一个实施方式,可导电的材料分别将接触面与连接面导电地连接。
附图说明
下面根据实施例和相应的附图详细阐述在这里所说明的方法以及在这里所说明的光电子半导体器件。
图1和图2通过在这里所说明的方法示出两个实施例的用于制造的各个生产步骤。
图3示出在这里所说明的光电子半导体器件的一个实施例的示意的侧视图。
在实施例和附图中,相同的或起相同作用的组成部分分别设有相同的附图标记。所示出的元件不视为是按比例的,相反,为了更好的理解,各个元件被夸大地示出。
具体实施方式
图1在部段A中示出步骤a)和b),其中首先提供有载体1,所述载体具有上侧12和与载体1的上侧12相对置的下侧11。此外,载体1具有在横向方向L上并排设置在上侧12上的多个连接面13。光电子器件2设置在载体1上。光电子器件2中的每个具有背离于载体1的接触面22。光电子器件2能够是发射辐射的半导体芯片,所述半导体芯片发射紫外辐射或可见光。
在图1的部段A至H中所示出的是,连接面13分别由贯通接触部14构成。所述贯通接触部14从载体1的上侧12起沿朝向载体1的下侧11的方向延伸完全穿过载体1。贯通接触部14在下侧11上相应地构成另一连接面15。例如,借助这类的另一连接面15,之后的光电子半导体器件100是可表面贴装的。
在图1的部段B中,在步骤c)中所示出的是,如何将保护元件41和42分别施加到连接面13和光电子器件2的接触面22上。当前,借助于喷射来施加所述保护元件41和42。此外,从图1的部段B中可见,沿着分割线S附加地施加保护元件43。在此,能够借助光刻胶和/或热熔胶来构成保护元件41、42和/或43。
在图1的部段C中所示出的是,如何将转换元件9施加到光电子器件2的辐射穿透面21上。当前,所述转换元件9以层的形式构成,并且至少局部地覆盖光电子器件2的辐射穿透面21。例如,所述转换元件9将由光电子器件2发射的蓝光部分地转换为黄光,因此所述黄光能够连同蓝光一起混合成白光。
如在图1的部段D中所示出的,在下一步骤d)中,将电绝缘层3借助于浇注施加到保护元件41、42和43的、光电子器件2的、转换元件9的暴露的位置上以及载体1的暴露的位置上。换句话说,电绝缘层3是通过浇注来施加的浇注体33。当前,保护元件41和42以及转换元件9在垂直方向V上与电绝缘层3齐平。反之,保护元件43在暴露的位置上被电绝缘层3完全地且形状配合地覆盖。在载体1的俯视图中,保护元件41和42是从外部可见的并且是例如可自由接近的。
在图1的部段E中示出了步骤e),其中将保护元件41和42再次移除。当前,保护元件41的横向延展部45从保护元件41和42背离于载体1的侧起沿朝向载体1的下侧11的方向缩小。换句话说,保护元件41和42构造为锥形的。通过保护元件41和42的这类锥形的构造,能够特别简单且低成本地再次移除保护元件41和42。例如,能够将保护元件41和42借助于水剥离移除,也就是说借助于湿法化学刻蚀来移除保护元件41和42。
在图1的部段F中所示出的是,如何在下一步骤f)中将可导电的材料8设置在电绝缘层3上并且设置在通过移除保护元件41和42而在电绝缘层3中产生的开口5中。基于保护元件41和42的锥形的形状,开口5同样是锥形的。因此开口5不借助于材料去除例如钻孔而在电绝缘层中产生。
可导电的材料8完全地设置在开口5中以及在横向方向L上设置在电绝缘层3的背离于载体1的外表面上的两个开口5之间。由于开口5的锥形构造,所述开口5能够特别简单地由可导电的材料8填充。例如,借助于溅射和/或喷射来施加可导电的材料8。例如,可导电的材料8由Ti和/或Cu构成。可导电的材料8与光电子器件2的相应的接触面22直接接触以及与连接面13直接接触。换句话说,当前,光电子器件2中的每个通过可导电的材料8经由连接位置13和贯通接触部14与另一连接位置15导电地接触。
在图1中的部段G中还示出的是,如何将在保护元件43的区域中的在保护元件43之上的电绝缘层3移除。例如,所述移除借助于高能量的激光实现。
此外,在图1的部段H中的下一步骤中所示出的是,如何移除保护元件43,由此在电绝缘层3中产生另一开口55。有利地,在分割为各个光电子半导体器件100期间,不必通过电绝缘层3,而是仅通过载体1沿着分割线S进行分割。
在图2中通过在这里所说明的方法说明了另一个实施例的用于制造的各个生产步骤。
与在图1中所示出的方法不同,在图2所示出的方法中放弃了施加转换元件9。代替于此,在图2的部段B中将保护层44施加到光电子器件2中的每个的辐射穿透面21上。换句话说,保护层44至少局部地覆盖光电子器件2的辐射穿透面21。
在图2的部段C中可见,保护层44在所有暴露的位置上被电绝缘层3完全地且形状配合地覆盖。
在图2的部段D和E中又示出了步骤e),如何通过移除保护元件41和42而产生开口5,以及如在图1的实施形式中所说明的,紧接着将可导电的材料8设置在所述开口5中。
在图2的部段F中所示出的是,如何将电绝缘层3从保护层44移除。换句话说,因此保护层44至少局部地不具有电绝缘层3。在本文中“不具有”意味着,保护层44不再被电绝缘层3覆盖。最大可能的是,由于制造,在保护层44的不具有电绝缘层的位置上仍存在电绝缘层3的材料残余。
在图2的部段G中所示出的下一步骤中,将保护层44从辐射穿透面21移除。通过移除而在电绝缘层3中产生窗口31,当前,所述窗口31具有底面311、与所述底面311相对置的开口313以及侧面312。侧面312完全由电绝缘层3构成,其中窗口31的底面311完全由辐射穿透面21构成。
在图2的段部H中还示出的是,在窗口31中设置有另一浇注体32,所述浇注体32包含荧光转换材料。当前,所述荧光转换材料是引入另一浇注体32的材料中的磷。例如,光电子器件2是RGB发光二极管芯片,所述RGB发光二极管芯片所发射的白光部分地转换为其它波长的光。
在图3中示出一个在这里所说明的光电子器件100的侧视图。光电子器件100具有载体1,载体1具有上侧12以及与上侧12相对置的下侧11。在构造在上侧12上的安装面122上安装有光电子器件2,并且所述光电子器件2与载体1导电地接触。在电绝缘层3中的开口5中设置有可导电的材料8,并且所述可导电的材料完全地填满开口5。此外,可导电的材料8沿着电绝缘层3的上侧35在横向方向L上在两个开口5之间延伸。可导电的材料8在连接面13和接触面22之间构成连续的导电连接部。所述开口尤其不借助于材料去除而在电绝缘层3中产生。也就是说,开口5、接触面22和连接面13不具有由于钻孔而产生的表面损伤。
本发明不被基于所述实施例的说明限制。相反,本发明包括每个新的特征以及特征的每个组合,这尤其包含权利要求中的特征的每个组合,即使所述特征或所述组合本身没有在权利要求或实施例中明确地说明。
本专利申请要求德国专利申请102010034565.2的优先权,所述德国专利申请的公开内容通过参引的方式并入本文。
Claims (10)
1.用于制造至少一个光电子半导体器件(100)的方法,具有下述步骤:
a)提供载体(1),所述载体(1)具有上侧(12)、与所述载体(1)的所述上侧(12)相对置的下侧(11)、以及在横向方向(L)上并排设置在所述上侧(12)上的多个连接面(13),其中横向方向(L)是平行于载体(1)的主延伸方向的方向;
b)将在横向方向(L)上彼此间隔开地设置的多个光电子器件(2)施加到所述载体(1)的上侧(12)上,所述多个光电子器件(2)分别具有背离于所述载体(1)的至少一个接触面(22);
c)将保护元件(41、42)施加到所述接触面(22)和所述连接面(13)上,其中所述保护元件(41、42)中的至少一个由下述材料中的至少一种制成或包含下述材料中的至少一种:半导体材料、陶瓷材料,
并且其中所述保护元件(41、42)中的至少一个的横向延展部(45)从所述保护元件(41、42)的背离于所述载体(1)的侧起沿朝向所述载体(1)的所述下侧(11)的方向缩小;
d)将至少一个电绝缘层(3)施加到所述载体(1)的、所述接触面(22)的以及所述保护元件(41,42)的暴露的位置上;
e)移除所述保护元件(41、42),由此在所述电绝缘层(3)中产生开口(5);
f)将能导电的材料(8)设置在所述电绝缘层(3)上并且至少局部地设置在所述开口(5)中,其中所述能导电的材料(8)分别将接触面(22)和与所述接触面相关联的连接面(13)导电地连接。
2.根据权利要求1所述的方法,其中所述电绝缘层(3)是反射辐射的或吸收辐射的。
3.根据权利要求1或2所述的方法,其中所述电绝缘层(3)是通过浇注来施加的浇注体(33)。
4.根据权利要求1或2所述的方法,其中所述保护元件(41、42)中的至少一个借助于下述工艺中的至少一种来施加:喷射、层压、点胶、丝网印刷、喷涂。
5.根据权利要求1或2所述的方法,其中在步骤d)之前,将另外的保护元件(43)在所述载体(1)的所述上侧(12)上沿着分割线(S)施加在所述载体(1)上。
6.根据权利要求5所述的方法,其中在移除所述另外的保护元件(43)之后,沿着所述分割线(S)将所述载体(1)分割为各个光电子半导体器件(100)。
7.根据权利要求1或2所述的方法,其中所述保护元件(41、42)在垂直方向(V)上与所述电绝缘层(3)齐平。
8.根据权利要求1或2所述的方法,其中在所述步骤d)之前,将至少一个转换元件(9)施加到光电子器件(2)的辐射穿透面(21)上。
9.根据权利要求1或2所述的方法,其中在所述步骤d)之前,将保护层(44)施加到光电子器件(2)的辐射穿透面(21)上,所述保护层至少局部地覆盖所述辐射穿透面(21),其中在所述步骤d)之后将所述保护层(44)移除,由此在所述电绝缘层(3)中产生窗口(31)。
10.根据权利要求9所述的方法,其中在所述窗口(31)中设置有至少一个转换元件(9)和/或另一浇注体(32),其中所述另一浇注体(32)包含至少一种荧光转换材料(51)。
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PCT/EP2011/063987 WO2012022695A1 (de) | 2010-08-17 | 2011-08-12 | Verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements |
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DE102012102420B4 (de) * | 2012-03-21 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102012103198B4 (de) | 2012-04-13 | 2019-02-21 | Vossloh-Schwabe Deutschland Gmbh | Trägereinrichtung für ein Leuchtmodul und Verfahren zu deren Herstellung |
DE102012215524A1 (de) | 2012-08-31 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
DE102013205179A1 (de) * | 2013-03-25 | 2014-09-25 | Osram Gmbh | Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe |
DE102014114188B4 (de) * | 2014-09-30 | 2022-01-20 | Osram Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102014116079A1 (de) * | 2014-11-04 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102015107742A1 (de) | 2015-05-18 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
DE102016118990A1 (de) | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Sensor |
DE102016118996A1 (de) | 2016-10-06 | 2018-04-12 | Osram Opto Semiconductors Gmbh | Herstellung von sensoren |
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