CN101040221B - 含有芳香族磺酸酯化合物和光酸发生剂的形成下层防反射膜的组合物 - Google Patents

含有芳香族磺酸酯化合物和光酸发生剂的形成下层防反射膜的组合物 Download PDF

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Publication number
CN101040221B
CN101040221B CN2005800346117A CN200580034611A CN101040221B CN 101040221 B CN101040221 B CN 101040221B CN 2005800346117 A CN2005800346117 A CN 2005800346117A CN 200580034611 A CN200580034611 A CN 200580034611A CN 101040221 B CN101040221 B CN 101040221B
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China
Prior art keywords
lower layer
compound
preventing film
reflection preventing
layer reflection
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CN2005800346117A
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Chinese (zh)
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CN101040221A (zh
Inventor
畑中真
榎本智之
木村茂雄
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Nissan Chemical Corp
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Nissan Chemical Corp
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
CN2005800346117A 2004-10-14 2005-09-27 含有芳香族磺酸酯化合物和光酸发生剂的形成下层防反射膜的组合物 Active CN101040221B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004299715 2004-10-14
JP299715/2004 2004-10-14
PCT/JP2005/017734 WO2006040922A1 (ja) 2004-10-14 2005-09-27 芳香族スルホン酸エステル化合物及び光酸発生剤を含む下層反射防止膜形成組成物

Publications (2)

Publication Number Publication Date
CN101040221A CN101040221A (zh) 2007-09-19
CN101040221B true CN101040221B (zh) 2010-06-16

Family

ID=36148219

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800346117A Active CN101040221B (zh) 2004-10-14 2005-09-27 含有芳香族磺酸酯化合物和光酸发生剂的形成下层防反射膜的组合物

Country Status (5)

Country Link
JP (1) JP4525940B2 (ko)
KR (1) KR101195468B1 (ko)
CN (1) CN101040221B (ko)
TW (1) TWI375868B (ko)
WO (1) WO2006040922A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101118697B1 (ko) * 2004-09-03 2012-03-12 닛산 가가쿠 고교 가부시키 가이샤 폴리아미드산을 포함하는 하층 반사방지막 형성조성물
KR101195468B1 (ko) * 2004-10-14 2012-10-30 닛산 가가쿠 고교 가부시키 가이샤 방향족 술폰산 에스테르 화합물 및 광산발생제를 포함하는 하층반사방지막 형성조성물
US8445175B2 (en) 2006-06-19 2013-05-21 Nissan Chemical Industries, Ltd. Composition containing hydroxylated condensation resin for forming resist underlayer film
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8039201B2 (en) 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP2013137334A (ja) * 2010-04-21 2013-07-11 Nissan Chem Ind Ltd ポリイミド構造を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
KR102026039B1 (ko) * 2011-07-12 2019-09-26 닛산 가가쿠 가부시키가이샤 조성물, 액정 배향 처리제, 액정 배향막 및 액정 표시 소자
SG10201607603VA (en) 2011-10-10 2016-11-29 Brewer Science Inc Spin-on carbon compositions for lithographic processing
US9910354B2 (en) 2014-04-25 2018-03-06 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition and method for forming resist pattern using the same
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455416B1 (en) * 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
CN1502062A (zh) * 2001-04-10 2004-06-02 日产化学工业株式会社 形成光刻用防反射膜的组合物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0572736A (ja) * 1991-09-18 1993-03-26 Hitachi Chem Co Ltd 含フツ素系ポリイミド樹脂膜パターンの製造法
JP3031214B2 (ja) * 1995-09-11 2000-04-10 信越化学工業株式会社 反射防止膜材料
KR100839393B1 (ko) * 2001-07-26 2008-06-19 닛산 가가쿠 고교 가부시키 가이샤 폴리아믹산 수지 조성물
TWI358612B (en) * 2003-08-28 2012-02-21 Nissan Chemical Ind Ltd Polyamic acid-containing composition for forming a
KR101195468B1 (ko) * 2004-10-14 2012-10-30 닛산 가가쿠 고교 가부시키 가이샤 방향족 술폰산 에스테르 화합물 및 광산발생제를 포함하는 하층반사방지막 형성조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455416B1 (en) * 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
CN1502062A (zh) * 2001-04-10 2004-06-02 日产化学工业株式会社 形成光刻用防反射膜的组合物

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开平5-72736A 1993.03.26
JP特开平9-78031A 1997.03.25

Also Published As

Publication number Publication date
JPWO2006040922A1 (ja) 2008-05-15
TW200622498A (en) 2006-07-01
JP4525940B2 (ja) 2010-08-18
KR101195468B1 (ko) 2012-10-30
KR20070065316A (ko) 2007-06-22
TWI375868B (en) 2012-11-01
WO2006040922A1 (ja) 2006-04-20
CN101040221A (zh) 2007-09-19

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