CN100419397C - Method for correcting zero offset voltage of pressure transducer - Google Patents
Method for correcting zero offset voltage of pressure transducer Download PDFInfo
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- CN100419397C CN100419397C CNB2005100780589A CN200510078058A CN100419397C CN 100419397 C CN100419397 C CN 100419397C CN B2005100780589 A CNB2005100780589 A CN B2005100780589A CN 200510078058 A CN200510078058 A CN 200510078058A CN 100419397 C CN100419397 C CN 100419397C
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Abstract
The present invention discloses a method for correcting zero offset voltage of a piezoresistive pressure transducer, which at least comprises following steps: firstly, at least one test sample of the piezoresistive pressure transducer is provided; the zero offset voltage value of the test sample of the piezoresistive pressure transducer is measured; a corresponding stress offset value is calculated according to the zero offset voltage value. Subsequently, at least one piezoresistive pressure transducer is made under the same condition as the test sample of the piezoresistive pressure transducer. In the process of making the piezoresistive pressure transducer, one stress adjusting film is formed on at least one surface of the piezoresistive pressure transducer according to the stress offset value so as to correct the zero offset voltage of the piezoresistive pressure transducer.
Description
Technical field
The present invention relates to a kind of method of zero migration voltage (zero offset) of calibrating (base measuring) pressure sensor, at least one surface that is particularly related to a kind of sensing barrier film (diaphragm) at pressure transducer forms a stress and adjusts film (stress adjusting thin film), with the zero migration voltage method of calibrating (base measuring) pressure sensor.
Background technology
Pressure transducer (pressure sensor) is one of assembly common in micro electronmechanical (MEMS) product, and the more present pressure transducer of the most widely using of pressure resistance type (piezoresistor) pressure transducer wherein.Please refer to Fig. 1.Fig. 1 is the principle Organization Chart of existing piezoresistive pressure sensor 10.Existing piezoresistive pressure sensor 10 is to be built on a Wheatstone bridge (wheatstone bridge) framework, and utilizes the resistance value of piezoresistance to operate because of the different principles that change of pressurized.As shown in Figure 1, Wheatstone bridge is made of four variable resistor R1, R2, R3 and R4, input voltage (Vin) is electrically connected to variable resistor R1 respectively simultaneously, between the R2 and variable resistor R3, between the R4, output voltage (Vout) then is to be electrically connected to variable resistor R1 respectively on the other hand, between the R3 and variable resistor R2, between the R4.The characteristic of Wheatstone bridge is to have following relation between output voltage and the input voltage:
Vout＝Vin*ΔR/R
Wherein, R is the initial resistivity value of variable resistor R1, R2, R3 and R4, and Δ R is the variable quantity of the resistance value of R1, R2, R3 and R4.The variable resistor of piezoresistive pressure sensor 10 is piezoresistances, and variable resistor R1, and R3 resistance value when pressurized can descend, and variable resistor R2, R4 resistance value when pressurized then can increase.At input voltage is under the situation of constant, and the variable quantity of output voltage is the variable quantity that is proportional to resistance value, so piezoresistive pressure sensor 10 is by measuring the variable quantity that output voltage values can draw pressure.
Please refer to Fig. 2, and in the lump with reference to figure 1.Fig. 2 is the synoptic diagram of existing piezoresistive pressure sensor 10.As shown in Figure 2, existing piezoresistive pressure sensor 10 includes a sensing barrier film 12, a pressure-sensing assembly 14 is located in the sensing barrier film 12, and a pedestal (stand) 16 is located at sensing barrier film 12 times in order to support sensing barrier film 12.Sensing barrier film 12 generally is the semiconductor material, constitute as silicon, and the circuit framework of pressure-sensing assembly 14 inside as shown in Figure 1, its production method then is utilize to mix and diffusion way forms piezoresistance in sensing barrier film 12, the lead that then utilizes technology formation such as deposition and etching to be connected with piezoresistance again.16 of pedestals can be semiconductor material or glass material etc.As previously mentioned, when the surface of piezoresistive pressure sensor 10 is stressed, can makes variable resistor R1, R2, R3 and R4 produce deformation, and then output voltage values is changed, can draw the variable quantity of pressure by this.
Yet piezoresistive pressure sensor 10 is in manufacturing process, easily because factors such as craft precision, technological temperature, stress-retained and material thermal expansion coefficient differences, cause Wheatstone bridge initial conditions deviation, thereby produce excessive zero migration magnitude of voltage (zero offset).The zero migration magnitude of voltage is in a single day excessive, will cause subsequent conditioning circuit design degree of difficulty, influence the performance of piezoresistive pressure sensor 10, increase the cost of correction simultaneously.Please refer to Fig. 3.Fig. 3 is the existing synoptic diagram of piezoresistive pressure sensor 10 under the excessive situation of zero migration voltage.As shown in Figure 3, since aforesaid stresses residual with factor such as material thermal expansion coefficient difference, piezoresistive pressure sensor 10 can produce the deformation of trace, cause promptly being under pressure and the change of the value of having a resistance under variable resistor R1, R2, R3 and R4 in the sensing barrier film 12 and the initial conditions, thereby cause piezoresistive pressure sensor 10 under initial conditions, promptly to have excessive zero migration voltage.At this problem, prior art mainly is to utilize laser reconditioning (laser trimming) technology after piezoresistive pressure sensor 10 completes, and changes the resistance value of variable resistor R1, R2, R3 and R4, with the suppressed zero offset voltage.
Though the laser reconditioning technology can effectively change variable-resistance resistance value,, therefore only be applied on the product of high unit price at present because the cost of laser reconditioning technology is higher.In addition, the laser reconditioning technology needs to repair respectively at single piezoresistive pressure sensor, and can't carry out batch production, is technologic bottleneck therefore.Given this, the applicant proposes a kind of zero migration voltage method of utilizing stress adjustment film calibrating (base measuring) pressure sensor, but it has low-cost characteristic of producing with batch, can solve the expensive and not good shortcoming of efficient of existing method.
Summary of the invention
Therefore, fundamental purpose of the present invention is to provide a kind of zero migration voltage method of calibrating (base measuring) pressure sensor, to solve the difficult problem that prior art can't overcome.
According to the present invention, a kind of zero migration voltage method of calibrating (base measuring) pressure sensor is provided, it includes the following step at least:
At least one pressure transducer test sample book is provided, and measures a zero migration magnitude of voltage of this pressure transducer test sample book;
Calculate a corresponding stress-deviation value according to this zero migration magnitude of voltage; And
Under the process conditions identical, make at least one pressure transducer with this pressure transducer test sample book, and in the process of making this pressure transducer, form a stress according to this stress-deviation value at least one surface of this pressure transducer and adjust film, to proofread and correct the zero migration voltage of this pressure transducer.
Because the zero migration voltage method of calibrating (base measuring) pressure sensor of the present invention is measured the zero migration magnitude of voltage of a pressure transducer test sample book earlier, again when making and above-mentioned pressure transducer test sample book have the pressure transducer of same process condition, form a stress on the surface of the sensing barrier film of pressure transducer according to this zero migration magnitude of voltage and adjust film, with the suppressed zero offset voltage.In other words, the zero migration voltage of calibrating (base measuring) pressure sensor of the present invention is to carry out in the wafer technique stage, so have low-cost and high efficiency advantage.
For a nearlyer step is understood feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet described accompanying drawing only for reference with aid illustration usefulness, be not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 is the principle Organization Chart of existing piezoresistive pressure sensor.
Fig. 2 is the synoptic diagram of existing piezoresistive pressure sensor.
Fig. 3 is the existing synoptic diagram of piezoresistive pressure sensor under the excessive situation of zero migration voltage.
Fig. 4 proofreaies and correct the process flow diagram of the zero migration voltage method of piezoresistive pressure sensor for the present invention.
Fig. 5 and Fig. 6 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of a preferred embodiment of the present invention.
Fig. 7 and Fig. 8 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of another preferred embodiment of the present invention.
Fig. 9 and Figure 10 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of the another preferred embodiment of the present invention.
The reference numeral explanation
10-piezoresistive pressure sensor 12-sensing barrier film
14-pressure-sensing assembly 16-pedestal
30-steps flow chart 32-steps flow chart
34-steps flow chart 50-substrate
52-pressure-sensing assembly 54-stress is adjusted film
56-pedestal 58-piezoresistive pressure sensor
60-substrate 62-pressure-sensing assembly
64-stress is adjusted film 66-pedestal
68-piezoresistive pressure sensor 70-substrate
72-pressure-sensing assembly 74-stress is adjusted film
76-stress is adjusted film 78-pedestal
The 80-piezoresistive pressure sensor
Embodiment
Please refer to Fig. 4.Fig. 4 proofreaies and correct the process flow diagram of the zero migration voltage method of piezoresistive pressure sensor for the present invention.As shown in Figure 4, it is as follows that the present invention proofreaies and correct the process step of zero migration voltage method of piezoresistive pressure sensor:
Step 30: at least one piezoresistive pressure sensor test sample book at first is provided, and measures a zero migration magnitude of voltage of piezoresistive pressure sensor test sample book;
Step 32: then calculate a corresponding stress-deviation value according to above-mentioned zero migration magnitude of voltage;
Step 34: subsequently with above-mentioned piezoresistive pressure sensor test sample book same process condition under make at least one piezoresistive pressure sensor, and in the process of making piezoresistive pressure sensor, form a stress according to above-mentioned stress-deviation value at least one surface of piezoresistive pressure sensor and adjust film, adjusting the stress of piezoresistive pressure sensor, thereby reach the effect of the zero migration voltage of proofreading and correct piezoresistive pressure sensor.
From the above, the zero migration voltage method that the present invention proofreaies and correct piezoresistive pressure sensor is before making piezoresistive pressure sensor, in advance a piezoresistive pressure sensor test sample book is tested to measure a zero migration magnitude of voltage, and calculate corresponding stress-deviation value by this zero migration magnitude of voltage, then with above-mentioned piezoresistive pressure sensor test sample book same process condition under make piezoresistive pressure sensor, in technology, form at least one stress simultaneously and adjust film at least one surface of piezoresistive pressure sensor.Because piezoresistive pressure sensor and piezoresistive pressure sensor test sample book are to make under the same process condition, therefore utilize this correction mechanism can effectively compensate in the piezoresistive pressure sensor technology because the zero migration voltage problem that influence produced of factors such as craft precision, technological temperature, stress-retained and material thermal expansion coefficient difference, promote the performance of piezoresistive pressure sensor by this.
Please refer to Fig. 5 and Fig. 6, and in the lump with reference to figure 4.Fig. 5 and Fig. 6 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of a preferred embodiment of the present invention.As shown in Figure 5, at first provide a substrate 50, semiconductor silicon wafer for example is as the usefulness of sensing barrier film.Then form a plurality of pressure-sensing assemblies 52 in substrate 50, wherein the making of pressure-sensing assembly 52 is to utilize to mix and modes such as diffusion form piezoresistance in substrate 50, simultaneously and cooperate technologies formation leads such as deposition and etching.The characteristics of present embodiment are to form before or after the pressure-sensing assembly 52 simultaneously, form stress adjustment film 54 at the lower surface of substrate 50 in addition according to the stress-deviation value that precomputes, with the zero migration voltage of calibrating (base measuring) pressure sensing component 52.As shown in Figure 6, then the below of stress adjustment film 54 forms the pedestal 56 of a plurality of respectively corresponding each pressure-sensing assembly 52, and after cutting and packaging technology, can form a plurality of piezoresistive pressure sensors 58, wherein the making of pedestal 56 can be with another substrate, for example a silicon wafer or chip glass, be bonded on stress and adjust the surface of film 54, and cooperate etch process to be formed.
From the above, the foregoing description be utilize lower surface in substrate 50 form mode that a stress adjusts film 54 to avoid piezoresistive pressure sensor 58 because the deformation that unequal power distribution was caused, proofread and correct the zero migration voltage of piezoresistive pressure sensor 58 by this.Stress is adjusted the direction of selecting visual stress-deviation value for use of film 54 and is a tension stress film or a compression stress film, for example silicon nitride, monox and silicon oxynitride, or other material that is fit to.Moreover stress is adjusted film 54 and also is not limited to a single layer structure, and visual effect or other are considered and be a lamination layer structure.In addition, provide tension stress or the compression stress except that utilizing material characteristic difference, it is thickness adjusted that the size of stress then can utilize proof stress to adjust film 54.In addition, the piezoresistive pressure sensor 58 of present embodiment also can be produced on one silicon-coated insulated (SOI) substrate, and stress is adjusted the insulation course that film 54 also can be silicon-coated insulated substrate itself under this situation.
Please refer to Fig. 7 and Fig. 8.Fig. 7 and Fig. 8 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of another preferred embodiment of the present invention.As shown in Figure 7, at first provide a substrate 60, semiconductor silicon wafer for example is as the usefulness of sensing barrier film.Then in substrate 60, form a plurality of pressure-sensing assemblies 62.Be that with the previous embodiment difference stress is adjusted the upper surface that film 64 is formed in substrate 60 in the present embodiment, use the zero migration voltage of calibrating (base measuring) pressure sensing component 62.As shown in Figure 8, then below substrate 60, form the pedestal 66 of a plurality of respectively corresponding each pressure-sensing assembly 62, and after cutting and packaging technology, can form a plurality of piezoresistive pressure sensors 68.
Please refer to Fig. 9 and Figure 10.Fig. 9 and Figure 10 are the zero migration voltage method synoptic diagram of the correction piezoresistive pressure sensor of the another preferred embodiment of the present invention.As shown in Figure 9, at first provide a substrate 70, semiconductor silicon wafer for example is as the usefulness of sensing barrier film.Then in substrate 70, form a plurality of pressure-sensing assemblies 72.Be that with aforementioned two embodiment differences present embodiment is to utilize two stress to adjust upper surface and lower surface that film 74 and 76 is respectively formed at substrate 70, uses the zero migration voltage of calibrating (base measuring) pressure sensing component 72.As shown in figure 10, then below stress is adjusted film 76, form the pedestal 78 of a plurality of respectively corresponding each pressure-sensing assembly 72, and after cutting and packaging technology, can form a plurality of piezoresistive pressure sensors 80.
From the above, after characteristics of the present invention are that the sense film of piezoresistive pressure sensor and circuit are finished, form stress on the surface of full wafer wafer and adjust film, in advance zero migration voltage is compensated by this, therefore compared to the existing method of utilizing the laser reconditioning technology, more can reach low-cost advantage of producing with batch.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (9)
1. the zero migration voltage method of a calibrating (base measuring) pressure sensor, it includes;
At least one pressure transducer test sample book is provided, and measures a zero migration magnitude of voltage of this pressure transducer test sample book;
Calculate a corresponding stress-deviation value according to this zero migration magnitude of voltage; And
Under the process conditions identical, make a plurality of pressure transducers with this pressure transducer test sample book, and in the process of making described pressure transducer, form a stress according to this stress-deviation value at least one surface of described pressure transducer and adjust film, to proofread and correct the zero migration voltage of described pressure transducer;
Wherein, described pressure transducer is a piezoresistive pressure sensor.
The method of claim 1, wherein respectively this pressure transducer include a sensing barrier film in addition.
3. method as claimed in claim 2, wherein, this stress is adjusted the upper surface that film is provided in a side of this sensing barrier film.
4. method as claimed in claim 2, wherein, this stress is adjusted the lower surface that film is provided in a side of this sensing barrier film.
5. the method for claim 1, wherein the material of this stress adjustment film is to be selected from silicon nitride, monox and silicon oxynitride.
6. the method for claim 1, wherein this stress adjustment film is to utilize the control different-thickness to adjust the zero migration voltage of described pressure transducer.
7. the method for claim 1, wherein this stress adjustment film is a tension stress film.
8. the method for claim 1, wherein this stress is adjusted a compression stress film of film.
9. the method for claim 1, wherein this stress adjustment film is a lamination layer structure.
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| CNB2005100780589A CN100419397C (en) | 2005-06-14 | 2005-06-14 | Method for correcting zero offset voltage of pressure transducer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20220231647A1 (en) * | 2021-01-21 | 2022-07-21 | Maxim Integrated Products, Inc. | Offset voltage compensation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859109B (en) * | 2009-04-09 | 2012-05-30 | 上海富辉精密电子有限公司 | Control method of equipment containing pressure sensor |
| CN101806602B (en) * | 2009-12-23 | 2011-08-10 | 哈尔滨工业大学 | Piezoresistive sensor circuit capable of automatically correcting zero-bias |
| CN102564689B (en) * | 2011-12-29 | 2014-02-05 | 浙江智慧电装有限公司 | Zero correction method and device of torque sensor |
| CN102890183B (en) * | 2012-10-23 | 2015-02-04 | 四川长虹空调有限公司 | Method and device for automatic voltage correction of zero crossing detection circuit |
| FR3037142B1 (en) * | 2015-06-03 | 2018-11-02 | Safran Electronics & Defense | PRESSURE MEASURING DEVICE WITH IMPROVED RELIABILITY AND ASSOCIATED CALIBRATION METHOD |
| CN113900457B (en) * | 2021-09-29 | 2024-03-19 | 西安北方华创微电子装备有限公司 | Pressure zeroing method and semiconductor process equipment |
| CN115014595A (en) * | 2022-06-21 | 2022-09-06 | 绍兴中芯集成电路制造股份有限公司 | Pressure sensor and preparation method thereof |
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| US6184561B1 (en) * | 1998-05-29 | 2001-02-06 | Denso Corporation | Semiconductor pressure sensor having strain gauges and stress balance film |
| CN1291279A (en) * | 1998-02-16 | 2001-04-11 | 麦卡创尼克新技术公司 | Tensile testing sensor for measuring mechanical jamming deformations on first installation and automatic calibrating based on said jamming |
| US6421188B1 (en) * | 1999-04-06 | 2002-07-16 | Canon Kabushiki Kaisha | Optical element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1291279A (en) * | 1998-02-16 | 2001-04-11 | 麦卡创尼克新技术公司 | Tensile testing sensor for measuring mechanical jamming deformations on first installation and automatic calibrating based on said jamming |
| US6184561B1 (en) * | 1998-05-29 | 2001-02-06 | Denso Corporation | Semiconductor pressure sensor having strain gauges and stress balance film |
| US6421188B1 (en) * | 1999-04-06 | 2002-07-16 | Canon Kabushiki Kaisha | Optical element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20220231647A1 (en) * | 2021-01-21 | 2022-07-21 | Maxim Integrated Products, Inc. | Offset voltage compensation |
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