CH671653A5 - - Google Patents

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Info

Publication number: CH671653A5
Authority: CH; Switzerland
Prior art keywords: metal; metal silicide; silicon body; bonding; sintering
Prior art date: 1986-11-03

Application number

CH433786A

Other languages

German (de)

English (en)

Inventor

Katalin Solt

Original Assignee

Landis & Gyr Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-11-03

Filing date

1986-11-03

Publication date

1989-09-15

1986-11-03 Application filed by Landis & Gyr Ag filed Critical Landis & Gyr Ag

1986-11-03 Priority to CH433786A priority Critical patent/CH671653A5/de

1987-07-02 Priority to DE19873721929 priority patent/DE3721929A1/de

1989-09-15 Publication of CH671653A5 publication Critical patent/CH671653A5/de

Links

229910052751 metal Inorganic materials 0.000 claims description 102
239000002184 metal Substances 0.000 claims description 102
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
229910052710 silicon Inorganic materials 0.000 claims description 64
239000010703 silicon Substances 0.000 claims description 64
229910021332 silicide Inorganic materials 0.000 claims description 63
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 56
238000000034 method Methods 0.000 claims description 32
238000005245 sintering Methods 0.000 claims description 27
239000004065 semiconductor Substances 0.000 claims description 26
239000012212 insulator Substances 0.000 claims description 15
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 12
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
229910021339 platinum silicide Inorganic materials 0.000 claims description 12
239000004020 conductor Substances 0.000 claims description 10
238000004519 manufacturing process Methods 0.000 claims description 7
239000013078 crystal Substances 0.000 claims description 6
238000005530 etching Methods 0.000 claims description 6
229910052697 platinum Inorganic materials 0.000 claims description 6
QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 5
238000010438 heat treatment Methods 0.000 claims description 3
239000003795 chemical substances by application Substances 0.000 claims description 2
230000000717 retained effect Effects 0.000 claims description 2
239000011521 glass Substances 0.000 description 18
238000004377 microelectronic Methods 0.000 description 9
150000002500 ions Chemical class 0.000 description 8
238000004544 sputter deposition Methods 0.000 description 8
229910004298 SiO 2 Inorganic materials 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
238000007740 vapor deposition Methods 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
150000002739 metals Chemical class 0.000 description 3
210000004127 vitreous body Anatomy 0.000 description 3
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
229910017604 nitric acid Inorganic materials 0.000 description 2
238000007639 printing Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
229910016006 MoSi Inorganic materials 0.000 description 1
229910008484 TiSi Inorganic materials 0.000 description 1
230000009471 action Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
239000003518 caustics Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
239000003153 chemical reaction reagent Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009713 electroplating Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
230000002452 interceptive effect Effects 0.000 description 1
229910000765 intermetallic Inorganic materials 0.000 description 1
230000035515 penetration Effects 0.000 description 1
229910021340 platinum monosilicide Inorganic materials 0.000 description 1
-1 pure platinum Chemical compound 0.000 description 1
239000010453 quartz Substances 0.000 description 1
238000007789 sealing Methods 0.000 description 1
238000000926 separation method Methods 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
230000002277 temperature effect Effects 0.000 description 1
238000007651 thermal printing Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Pressure Sensors (AREA)
Electrodes Of Semiconductors (AREA)
Ceramic Products (AREA)

CH433786A 1986-11-03 1986-11-03 CH671653A5 (nl)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
CH433786A CH671653A5 (nl)	1986-11-03	1986-11-03
DE19873721929 DE3721929A1 (de)	1986-11-03	1987-07-02	Verfahren zur herstellung hermetisch dichter elektrischer leiterbahnen in halbleiterelementen

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CH433786A CH671653A5 (nl)	1986-11-03	1986-11-03

Publications (1)

Publication Number	Publication Date
CH671653A5 true CH671653A5 (nl)	1989-09-15

Family

ID=4274212

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH433786A CH671653A5 (nl)	1986-11-03	1986-11-03

Country Status (2)

Country	Link
CH (1)	CH671653A5 (nl)
DE (1)	DE3721929A1 (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19741924C2 (de) *	1997-09-23	2000-03-02	Siemens Ag	Verfahren zum elektrochemischen Verbinden und Verbundteil

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1138401A (en) *	1965-05-06	1969-01-01	Mallory & Co Inc P R	Bonding

1986
- 1986-11-03 CH CH433786A patent/CH671653A5/de not_active IP Right Cessation
1987
- 1987-07-02 DE DE19873721929 patent/DE3721929A1/de active Granted

Also Published As

Publication number	Publication date
DE3721929A1 (de)	1988-05-11
DE3721929C2 (nl)	1990-02-08

Legal Events

Date	Code	Title	Description
1994-07-29	PL	Patent ceased
2024-10-31	PL	Patent ceased

Publication	Publication Date	Title
DE1930669C2 (de)	1986-11-27	Verfahren zur Herstellung einer integrierten Halbleiterschaltung
DE2036139A1 (de)	1971-02-04	Dunnfümmetallisierungsverfahren fur Mikroschaltungen
DE1764951B1 (de)	1972-03-16	Mehrschichtige metallisierung fuer halbleiteranschluesse
DE2440481B2 (de)	1977-12-01	Verfahren zum herstellen von duennschicht-leiterzuegen auf einem elektrisch isolierenden traeger
DE2901697C3 (de)	1982-06-09	Verfahren zur Ausbildung von Leitungsverbindungen auf einem Substrat
DE2422120B2 (de)	1981-07-02	Verfahren zur Herstellung einer Halbleiteranordnung
DE2230171A1 (de)	1973-01-11	Verfahren zum herstellen von streifenleitern fuer halbleiterbauteile
DE2620998A1 (de)	1976-11-25	Verfahren zur herstellung von traegern fuer die verarbeitung von ic-chips
EP0013728B1 (de)	1984-03-21	Verfahren zur Herstellung von elektrischen Verbindungen zwischen Leiterschichten in Halbleiterstrukturen
EP0764334B1 (de)	2002-06-05	Verfahren zur herstellung von bauelementen auf metallfilmbasis
DE2458734A1 (de)	1975-09-11	Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung
DE1639262A1 (de)	1971-02-04	Halbleiterbauelement mit einer Grossflaechen-Elektrode
DE2125643A1 (de)	1971-12-16	Elektrische Leiter und Halbleiterbauelemente sowie Verfahren zu ihrer Herstellung
DE3721929C2 (nl)	1990-02-08
DE3151557A1 (de)	1983-07-21	Elektrooptische anzeigevorrichtung und verfahren zu ihrer herstellung
DE2134291A1 (de)	1972-02-17	Halbleitervorrichtung
EP0967296B1 (de)	2003-12-10	Verfahren zum Beschichten eines Substrats
DE1764937C3 (de)	1984-08-30	Verfahren zur Herstellung von Isolationsschichten zwischen mehrschichtig übereinander angeordneten metallischen Leitungsverbindungen für eine Halbleiteranordnung
DE68907836T2 (de)	1993-12-23	Verfahren zum Testen der Leiterfilmqualität.
DE2018027A1 (de)	1970-10-22	Verfahren zum Einbringen extrem feiner öffnungen
DE1564136A1 (de)	1969-09-25	Verfahren zum Herstellen von Halbleiterbauelementen
DE1803025A1 (de)	1969-09-04	Elektrisches Bauelement und Verfahren zu seiner Herstellung
DE19600782C1 (de)	1997-03-06	Verfahren zum Herstellen von nebeneinanderliegenden Gräben oder Löchern in einem elektrisch nichtisolierenden Substrat, insbesondere einem Halbleitersubstrat
DE1614773C3 (de)	1976-04-08	Verfahren zum Herstellen einer SotarzeWe
DE1614310C3 (de)	1975-05-28	Verfahren zum Anbringen eines elektrischen Anschlusses auf einer Fläche eines elektronischen Bauelementes