CA968468A - Method of making a semiconductor device - Google Patents
Method of making a semiconductor deviceInfo
- Publication number
- CA968468A CA968468A CA142,806A CA142806A CA968468A CA 968468 A CA968468 A CA 968468A CA 142806 A CA142806 A CA 142806A CA 968468 A CA968468 A CA 968468A
- Authority
- CA
- Canada
- Prior art keywords
- making
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15681371A | 1971-06-25 | 1971-06-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA968468A true CA968468A (en) | 1975-05-27 |
Family
ID=22561196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA142,806A Expired CA968468A (en) | 1971-06-25 | 1972-05-23 | Method of making a semiconductor device |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE785397A (en) |
CA (1) | CA968468A (en) |
DE (1) | DE2230172B2 (en) |
FR (1) | FR2143418B1 (en) |
GB (1) | GB1363588A (en) |
IT (1) | IT956761B (en) |
SE (1) | SE383940B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016587A (en) * | 1974-12-03 | 1977-04-05 | International Business Machines Corporation | Raised source and drain IGFET device and method |
US4102733A (en) * | 1977-04-29 | 1978-07-25 | International Business Machines Corporation | Two and three mask process for IGFET fabrication |
FR2417853A1 (en) * | 1978-02-17 | 1979-09-14 | Thomson Csf | PROCESS FOR MAKING A MOS AND TRANSISTOR TYPE TRANSISTOR MADE ACCORDING TO THIS PROCEDURE |
-
1972
- 1972-05-23 CA CA142,806A patent/CA968468A/en not_active Expired
- 1972-06-20 GB GB2882172A patent/GB1363588A/en not_active Expired
- 1972-06-21 IT IT2601072A patent/IT956761B/en active
- 1972-06-21 SE SE821572A patent/SE383940B/en unknown
- 1972-06-21 DE DE19722230172 patent/DE2230172B2/en active Pending
- 1972-06-23 FR FR7222873A patent/FR2143418B1/fr not_active Expired
- 1972-06-23 BE BE785397A patent/BE785397A/en unknown
Also Published As
Publication number | Publication date |
---|---|
FR2143418B1 (en) | 1978-03-03 |
BE785397A (en) | 1972-10-16 |
FR2143418A1 (en) | 1973-02-02 |
SE383940B (en) | 1976-04-05 |
GB1363588A (en) | 1974-08-14 |
DE2230172B2 (en) | 1975-09-25 |
IT956761B (en) | 1973-10-10 |
DE2230172A1 (en) | 1972-12-28 |
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