GB1363588A - Mehtod of making a semiconductor device - Google Patents

Mehtod of making a semiconductor device

Info

Publication number
GB1363588A
GB1363588A GB2882172A GB2882172A GB1363588A GB 1363588 A GB1363588 A GB 1363588A GB 2882172 A GB2882172 A GB 2882172A GB 2882172 A GB2882172 A GB 2882172A GB 1363588 A GB1363588 A GB 1363588A
Authority
GB
United Kingdom
Prior art keywords
semi
source
regions
conductor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2882172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1363588A publication Critical patent/GB1363588A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1363588 Semi-conductor devices RCA CORPORATION 20 June 1972 [25 June 1971] 28821/72 Heading H1K Semi-conductor regions, such as the source and drain regions 16, 18 of an IGFET, are formed by diffusion into unmasked areas of the surface 14 of a semi-conductor body 12, parts of which areas are covered by material 32, 34 which is permeable to the diffusant and which is either conductive initially or is rendered conductive by the presence of the diffusant. Relatively shallow portions 60, 62 of the regions 16, 18 thus occur beneath the material 32, 34. The material 32, 34, which may also extend up on to the masking layer 26 as source and drain electrode layers 28, 30, preferably comprises Si, the gate electrode 24 then also being made of Si. The gate electrode 24 preferably initially covers only part of the masked area between the source and drain windows, self-alignment being obtained by taking away the edges of the masking layer thus exposed before diffusing in the dopant, which may be B or P. The material 32, 34 may alternatively be Ga.
GB2882172A 1971-06-25 1972-06-20 Mehtod of making a semiconductor device Expired GB1363588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15681371A 1971-06-25 1971-06-25

Publications (1)

Publication Number Publication Date
GB1363588A true GB1363588A (en) 1974-08-14

Family

ID=22561196

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2882172A Expired GB1363588A (en) 1971-06-25 1972-06-20 Mehtod of making a semiconductor device

Country Status (7)

Country Link
BE (1) BE785397A (en)
CA (1) CA968468A (en)
DE (1) DE2230172B2 (en)
FR (1) FR2143418B1 (en)
GB (1) GB1363588A (en)
IT (1) IT956761B (en)
SE (1) SE383940B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389233A1 (en) * 1977-04-29 1978-11-24 Ibm METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR WITH INSULATED DOOR USING TWO OR THREE MASKS

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
FR2417853A1 (en) * 1978-02-17 1979-09-14 Thomson Csf PROCESS FOR MAKING A MOS AND TRANSISTOR TYPE TRANSISTOR MADE ACCORDING TO THIS PROCEDURE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2389233A1 (en) * 1977-04-29 1978-11-24 Ibm METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR WITH INSULATED DOOR USING TWO OR THREE MASKS

Also Published As

Publication number Publication date
FR2143418B1 (en) 1978-03-03
BE785397A (en) 1972-10-16
FR2143418A1 (en) 1973-02-02
SE383940B (en) 1976-04-05
CA968468A (en) 1975-05-27
DE2230172B2 (en) 1975-09-25
IT956761B (en) 1973-10-10
DE2230172A1 (en) 1972-12-28

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees