BE636317A - - Google Patents
Info
- Publication number
- BE636317A BE636317A BE636317DA BE636317A BE 636317 A BE636317 A BE 636317A BE 636317D A BE636317D A BE 636317DA BE 636317 A BE636317 A BE 636317A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
- Gripping On Spindles (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US218904A US3226611A (en) | 1962-08-23 | 1962-08-23 | Semiconductor device |
US265649A US3226613A (en) | 1962-08-23 | 1963-03-18 | High voltage semiconductor device |
US265736A US3226612A (en) | 1962-08-23 | 1963-03-18 | Semiconductor device and method |
US321070A US3226614A (en) | 1962-08-23 | 1963-11-04 | High voltage semiconductor device |
US465012A US3309245A (en) | 1962-08-23 | 1965-06-18 | Method for making a semiconductor device |
US504813A US3309246A (en) | 1962-08-23 | 1965-10-24 | Method for making a high voltage semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
BE636317A true BE636317A (de) | 1900-01-01 |
Family
ID=27559106
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE636316D BE636316A (de) | 1962-08-23 | ||
BE636317D BE636317A (de) | 1962-08-23 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE636316D BE636316A (de) | 1962-08-23 |
Country Status (9)
Country | Link |
---|---|
US (6) | US3226611A (de) |
BE (2) | BE636317A (de) |
CH (1) | CH439498A (de) |
DE (3) | DE1295094B (de) |
DK (2) | DK128388B (de) |
GB (2) | GB1059739A (de) |
NL (3) | NL146646B (de) |
NO (2) | NO115810B (de) |
SE (2) | SE315660B (de) |
Families Citing this family (112)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1012519A (en) * | 1962-08-14 | 1965-12-08 | Texas Instruments Inc | Field-effect transistors |
BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
BE637064A (de) * | 1962-09-07 | Rca Corp | ||
BE639315A (de) * | 1962-10-31 | |||
US3199756A (en) * | 1963-04-09 | 1965-08-10 | Coroga Company | Package chain assembly and conveying means |
US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
NL135876C (de) * | 1963-06-11 | |||
US3304594A (en) * | 1963-08-15 | 1967-02-21 | Motorola Inc | Method of making integrated circuit by controlled process |
US3366850A (en) * | 1963-09-10 | 1968-01-30 | Solid State Radiations Inc | P-n junction device with interstitial impurity means to increase the reverse breakdown voltage |
DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
NL136562C (de) * | 1963-10-24 | |||
US3313012A (en) * | 1963-11-13 | 1967-04-11 | Texas Instruments Inc | Method for making a pnpn device by diffusing |
DE1250790B (de) * | 1963-12-13 | 1967-09-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper |
GB1094068A (en) * | 1963-12-26 | 1967-12-06 | Rca Corp | Semiconductive devices and methods of producing them |
US3342650A (en) * | 1964-02-10 | 1967-09-19 | Hitachi Ltd | Method of making semiconductor devices by double masking |
US3860948A (en) * | 1964-02-13 | 1975-01-14 | Hitachi Ltd | Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby |
US3339274A (en) * | 1964-03-16 | 1967-09-05 | Hughes Aircraft Co | Top contact for surface protected semiconductor devices |
US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
DE1210955B (de) * | 1964-06-09 | 1966-02-17 | Ibm Deutschland | Verfahren zum Maskieren von Kristallen und zum Herstellen von Halbleiterbauelementen |
US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
US3401448A (en) * | 1964-06-22 | 1968-09-17 | Globe Union Inc | Process for making photosensitive semiconductor devices |
USB381501I5 (de) * | 1964-07-09 | |||
US3341749A (en) * | 1964-08-10 | 1967-09-12 | Ass Elect Ind | Four layer semiconductor devices with improved high voltage characteristics |
CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
GB1095412A (de) * | 1964-08-26 | |||
US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
DE1496870A1 (de) * | 1964-10-01 | 1970-01-08 | Hitachi Ltd | Verfahren zur Herstellung einer Halbleiteranordnung |
US3345216A (en) * | 1964-10-07 | 1967-10-03 | Motorola Inc | Method of controlling channel formation |
US3341377A (en) * | 1964-10-16 | 1967-09-12 | Fairchild Camera Instr Co | Surface-passivated alloy semiconductor devices and method for producing the same |
US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
DE1439739B2 (de) * | 1964-11-06 | 1973-11-08 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Herstellen einer Halbleiteranordnung |
US3312577A (en) * | 1964-11-24 | 1967-04-04 | Int Standard Electric Corp | Process for passivating planar semiconductor devices |
US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
US3435302A (en) * | 1964-11-26 | 1969-03-25 | Sumitomo Electric Industries | Constant current semiconductor device |
DE1439478A1 (de) * | 1964-12-01 | 1968-10-31 | Siemens Ag | Flaechentransistor zum Betrieb in Regelschaltungen |
USB421061I5 (de) * | 1964-12-24 | |||
US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
BE674294A (de) * | 1964-12-28 | |||
US3338758A (en) * | 1964-12-31 | 1967-08-29 | Fairchild Camera Instr Co | Surface gradient protected high breakdown junctions |
US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
US3491434A (en) * | 1965-01-28 | 1970-01-27 | Texas Instruments Inc | Junction isolation diffusion |
GB1028485A (en) * | 1965-02-01 | 1966-05-04 | Standard Telephones Cables Ltd | Semiconductor devices |
US3268782A (en) * | 1965-02-02 | 1966-08-23 | Int Rectifier Corp | High rate of rise of current-fourlayer device |
US3383568A (en) * | 1965-02-04 | 1968-05-14 | Texas Instruments Inc | Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions |
US3354006A (en) * | 1965-03-01 | 1967-11-21 | Texas Instruments Inc | Method of forming a diode by using a mask and diffusion |
GB1061506A (en) * | 1965-03-31 | 1967-03-15 | Ibm | Method of forming a semiconductor device and device so made |
US3325707A (en) * | 1965-04-26 | 1967-06-13 | Rca Corp | Transistor with low collector capacitance and method of making same |
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
US3411199A (en) * | 1965-05-28 | 1968-11-19 | Rca Corp | Semiconductor device fabrication |
US3365629A (en) * | 1965-06-24 | 1968-01-23 | Sprague Electric Co | Chopper amplifier having high breakdown voltage |
US3434893A (en) * | 1965-06-28 | 1969-03-25 | Honeywell Inc | Semiconductor device with a lateral retrograded pn junction |
US3402081A (en) * | 1965-06-30 | 1968-09-17 | Ibm | Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby |
FR1450654A (fr) * | 1965-07-01 | 1966-06-24 | Radiotechnique | Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes |
US3397449A (en) * | 1965-07-14 | 1968-08-20 | Hughes Aircraft Co | Making p-nu junction under glass |
US3440496A (en) * | 1965-07-20 | 1969-04-22 | Hughes Aircraft Co | Surface-protected semiconductor devices and methods of manufacturing |
US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
US3473093A (en) * | 1965-08-18 | 1969-10-14 | Ibm | Semiconductor device having compensated barrier zones between n-p junctions |
US3418181A (en) * | 1965-10-20 | 1968-12-24 | Motorola Inc | Method of forming a semiconductor by masking and diffusing |
US3426422A (en) * | 1965-10-23 | 1969-02-11 | Fairchild Camera Instr Co | Method of making stable semiconductor devices |
DE1544273A1 (de) * | 1965-12-13 | 1969-09-04 | Siemens Ag | Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall |
US3503813A (en) * | 1965-12-15 | 1970-03-31 | Hitachi Ltd | Method of making a semiconductor device |
US3508125A (en) * | 1966-01-06 | 1970-04-21 | Texas Instruments Inc | Microwave mixer diode comprising a schottky barrier junction |
USB534135I5 (de) * | 1966-03-14 | |||
US3490964A (en) * | 1966-04-29 | 1970-01-20 | Texas Instruments Inc | Process of forming semiconductor devices by masking and diffusion |
US3457125A (en) * | 1966-06-21 | 1969-07-22 | Union Carbide Corp | Passivation of semiconductor devices |
US3476619A (en) * | 1966-09-13 | 1969-11-04 | Motorola Inc | Semiconductor device stabilization |
US3506890A (en) * | 1966-10-31 | 1970-04-14 | Hitachi Ltd | Field effect semiconductor device having channel stopping means |
US3497407A (en) * | 1966-12-28 | 1970-02-24 | Ibm | Etching of semiconductor coatings of sio2 |
GB1140822A (en) * | 1967-01-26 | 1969-01-22 | Westinghouse Brake & Signal | Semi-conductor elements |
US3632433A (en) * | 1967-03-29 | 1972-01-04 | Hitachi Ltd | Method for producing a semiconductor device |
US3510735A (en) * | 1967-04-13 | 1970-05-05 | Scient Data Systems Inc | Transistor with integral pinch resistor |
DE1644003A1 (de) * | 1967-04-20 | 1970-09-24 | Siemens Ag | Verfahren zum Dotieren von Halbleiterkristallen |
US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
US3510728A (en) * | 1967-09-08 | 1970-05-05 | Motorola Inc | Isolation of multiple layer metal circuits with low temperature phosphorus silicates |
US3959810A (en) * | 1967-10-02 | 1976-05-25 | Hitachi, Ltd. | Method for manufacturing a semiconductor device and the same |
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
US3923562A (en) * | 1968-10-07 | 1975-12-02 | Ibm | Process for producing monolithic circuits |
US3617398A (en) * | 1968-10-22 | 1971-11-02 | Ibm | A process for fabricating semiconductor devices having compensated barrier zones between np-junctions |
US3519897A (en) * | 1968-10-31 | 1970-07-07 | Nat Semiconductor Corp | Semiconductor surface inversion protection |
NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
NL165005C (nl) * | 1969-06-26 | 1981-02-16 | Philips Nv | Halfgeleiderinrichting bevattende veldeffecttransistors met geisoleerde stuurelektrode en werkwijze voor het vervaardigen van de halfgeleiderinrichting. |
US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
US3657612A (en) * | 1970-04-20 | 1972-04-18 | Ibm | Inverse transistor with high current gain |
FR2108781B1 (de) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
US3719535A (en) * | 1970-12-21 | 1973-03-06 | Motorola Inc | Hyperfine geometry devices and method for their fabrication |
US3776786A (en) * | 1971-03-18 | 1973-12-04 | Motorola Inc | Method of producing high speed transistors and resistors simultaneously |
US3842490A (en) * | 1971-04-21 | 1974-10-22 | Signetics Corp | Semiconductor structure with sloped side walls and method |
US3772575A (en) * | 1971-04-28 | 1973-11-13 | Rca Corp | High heat dissipation solder-reflow flip chip transistor |
US3677280A (en) * | 1971-06-21 | 1972-07-18 | Fairchild Camera Instr Co | Optimum high gain-bandwidth phototransistor structure |
DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
JPS4974486A (de) * | 1972-11-17 | 1974-07-18 | ||
NL161301C (nl) * | 1972-12-29 | 1980-01-15 | Philips Nv | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
US3895392A (en) * | 1973-04-05 | 1975-07-15 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
CA1025034A (en) * | 1973-06-01 | 1978-01-24 | Herman Statz | Semiconductor devices with isolation between adjacent regions and method of manufacture |
US3986752A (en) * | 1974-04-11 | 1976-10-19 | E. I. Du Pont De Nemours And Company | Resilient center bearing assembly |
GB1499845A (en) * | 1975-03-26 | 1978-02-01 | Mullard Ltd | Thyristors |
JPS5211872A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor device |
US4124863A (en) * | 1977-04-12 | 1978-11-07 | Harris Corporation | Positively biased substrate IC with thermal oxide guard ring |
US4105476A (en) * | 1977-05-02 | 1978-08-08 | Solitron Devices, Inc. | Method of manufacturing semiconductors |
US4225874A (en) * | 1978-03-09 | 1980-09-30 | Rca Corporation | Semiconductor device having integrated diode |
JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
US8324713B2 (en) * | 2005-10-31 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Profile design for lateral-vertical bipolar junction transistor |
TW201330282A (zh) * | 2012-01-09 | 2013-07-16 | Lextar Electronics Corp | 齊納二極體結構及其製造方法 |
FR3049770B1 (fr) * | 2016-03-31 | 2018-07-27 | Stmicroelectronics (Tours) Sas | Composant de puissance vertical |
US10211326B2 (en) * | 2016-03-31 | 2019-02-19 | Stmicroelectronics (Tours) Sas | Vertical power component |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA667423A (en) * | 1963-07-23 | Northern Electric Company Limited | Semiconductor device and method of manufacture | |
US2462218A (en) * | 1945-04-17 | 1949-02-22 | Bell Telephone Labor Inc | Electrical translator and method of making it |
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
US2703296A (en) * | 1950-06-20 | 1955-03-01 | Bell Telephone Labor Inc | Method of producing a semiconductor element |
US2748325A (en) * | 1953-04-16 | 1956-05-29 | Rca Corp | Semi-conductor devices and methods for treating same |
US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
NL189769C (nl) * | 1953-12-30 | Amp Akzo Corp | Werkwijze voor het handhaven van badoplossingen voor het stroomloos afzetten van koper op substraatplaten in inrichtingen uit metaal. | |
US2743200A (en) * | 1954-05-27 | 1956-04-24 | Bell Telephone Labor Inc | Method of forming junctions in silicon |
NL97896C (de) * | 1955-02-18 | |||
NL251064A (de) * | 1955-11-04 | |||
US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
US2819990A (en) * | 1956-04-26 | 1958-01-14 | Bell Telephone Labor Inc | Treatment of semiconductive bodies |
US3024160A (en) * | 1956-08-31 | 1962-03-06 | Process Methods Corp | Paper, particularly printing paper, and method of making same |
US2954307A (en) * | 1957-03-18 | 1960-09-27 | Shockley William | Grain boundary semiconductor device and method |
US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
US2899344A (en) * | 1958-04-30 | 1959-08-11 | Rinse in | |
NL111773C (de) * | 1958-08-07 | |||
AT214485B (de) * | 1958-09-30 | 1961-04-10 | Siemens Ag | Verfahren zur Herstellung von pn-Übergängen in einem Grundkörper aus vorwiegend einkristallinem Halbleitermaterial |
US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
DE1105069B (de) * | 1959-04-25 | 1961-04-20 | Siemens Ag | AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung |
US3140438A (en) * | 1959-05-08 | 1964-07-07 | Clevite Corp | Voltage regulating semiconductor device |
NL251527A (de) * | 1959-05-12 | |||
US2953486A (en) * | 1959-06-01 | 1960-09-20 | Bell Telephone Labor Inc | Junction formation by thermal oxidation of semiconductive material |
DE1414438A1 (de) * | 1959-11-13 | 1970-04-23 | ||
FR1279484A (fr) * | 1959-11-13 | 1961-12-22 | Siemens Ag | Dispositif semi-conducteur à monocristal |
US3114864A (en) * | 1960-02-08 | 1963-12-17 | Fairchild Camera Instr Co | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions |
NL265382A (de) * | 1960-03-08 | |||
US3085033A (en) * | 1960-03-08 | 1963-04-09 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
NL127213C (de) * | 1960-06-10 | |||
US3158788A (en) * | 1960-08-15 | 1964-11-24 | Fairchild Camera Instr Co | Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material |
NL267831A (de) * | 1960-08-17 | |||
US3117229A (en) * | 1960-10-03 | 1964-01-07 | Solid State Radiations Inc | Solid state radiation detector with separate ohmic contacts to reduce leakage current |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
NL125803C (de) * | 1961-01-16 | |||
FR1288168A (fr) * | 1961-02-08 | 1962-03-24 | Perfectionnements aux transistors à charges d'espace mitoyennes | |
DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
FR1337348A (fr) * | 1961-09-08 | 1963-09-13 | Pacific Semiconductors | Transistors de couplage |
US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
BE636316A (de) * | 1962-08-23 | 1900-01-01 |
-
0
- BE BE636316D patent/BE636316A/xx unknown
- BE BE636317D patent/BE636317A/xx unknown
- NL NL302804D patent/NL302804A/xx unknown
- NL NL297002D patent/NL297002A/xx unknown
-
1962
- 1962-08-23 US US218904A patent/US3226611A/en not_active Expired - Lifetime
-
1963
- 1963-03-18 US US265649A patent/US3226613A/en not_active Expired - Lifetime
- 1963-03-18 US US265736A patent/US3226612A/en not_active Expired - Lifetime
- 1963-08-06 GB GB31030/63A patent/GB1059739A/en not_active Expired
- 1963-08-06 GB GB31031/63A patent/GB1060303A/en not_active Expired
- 1963-08-08 NO NO149672A patent/NO115810B/no unknown
- 1963-08-08 NO NO149673A patent/NO119489B/no unknown
- 1963-08-19 SE SE9043/63A patent/SE315660B/xx unknown
- 1963-08-21 DK DK399163AA patent/DK128388B/da unknown
- 1963-08-21 DK DK399263AA patent/DK126811B/da unknown
- 1963-08-22 NL NL63297002A patent/NL146646B/xx not_active IP Right Cessation
- 1963-08-23 DE DEM57928A patent/DE1295094B/de active Pending
- 1963-09-03 SE SE09596/63A patent/SE338619B/xx unknown
- 1963-09-27 DE DEM58355A patent/DE1295093B/de active Pending
- 1963-09-27 DE DE6609659U patent/DE6609659U/de not_active Expired
- 1963-11-04 US US321070A patent/US3226614A/en not_active Expired - Lifetime
-
1964
- 1964-11-03 CH CH1422564A patent/CH439498A/fr unknown
-
1965
- 1965-06-18 US US465012A patent/US3309245A/en not_active Expired - Lifetime
- 1965-10-24 US US504813A patent/US3309246A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
SE338619B (de) | 1971-09-13 |
DK128388B (da) | 1974-04-22 |
GB1060303A (en) | 1967-03-01 |
NO119489B (de) | 1970-05-25 |
US3226611A (en) | 1965-12-28 |
US3226613A (en) | 1965-12-28 |
US3309246A (en) | 1967-03-14 |
CH439498A (fr) | 1967-07-15 |
NL302804A (de) | 1900-01-01 |
NL297002A (de) | 1900-01-01 |
DK126811B (da) | 1973-08-20 |
NL146646B (nl) | 1975-07-15 |
US3309245A (en) | 1967-03-14 |
US3226614A (en) | 1965-12-28 |
SE315660B (de) | 1969-10-06 |
DE1295094B (de) | 1969-05-14 |
DE6609659U (de) | 1972-08-24 |
US3226612A (en) | 1965-12-28 |
NO115810B (de) | 1968-12-09 |
DE1295093B (de) | 1969-05-14 |
GB1059739A (en) | 1967-02-22 |
BE636316A (de) | 1900-01-01 |