Nucleic acid memory

V Zhirnov, RM Zadegan, GS Sandhu, GM Church… - Nature materials, 2016 - nature.com
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Scaling limits of resistive memories

VV Zhirnov, R Meade, RK Cavin, G Sandhu - Nanotechnology, 2011 - iopscience.iop.org
This paper is intended to provide an expository, physics-based, framework for the estimation
of the performance potential and physical scaling limits of resistive memory. The approach …

A monolithically-integrated chip-to-chip optical link in bulk CMOS

C Sun, M Georgas, J Orcutt, B Moss… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Silicon-photonics is an emerging technology that can overcome the tradeoffs faced by
traditional electrical I/O. Due to ballooning development costs for advanced CMOS nodes, …

Emerging memories

L Baldi, R Bez, G Sandhu - Solid-State Electronics, 2014 - Elsevier
Memory is a key component of any data processing system. Following the classical Turing
machine approach, memories hold both the data to be processed and the rules for processing …

Modeling of breakdown-limited endurance in spin-transfer torque magnetic memory under pulsed cycling regime

R Carboni, S Ambrogio, W Chen… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest
as a candidate for storage-class memory, embedded memory, and possible replacement of …

Random number generation by differential read of stochastic switching in spin-transfer torque memory

R Carboni, W Chen, M Siddik, J Harms… - IEEE Electron …, 2018 - ieeexplore.ieee.org
The true random number generator (TRNG) is a key enabling technology for cryptography
and hardware authentication, which are becoming essential features in the era of the Internet …

A physics-based compact model of stochastic switching in spin-transfer torque magnetic memory

R Carboni, E Vernocchi, M Siddik… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Spin-transfer torque random-access memory (STT-RAM) is gaining momentum as a
promising technology for high-density and embedded nonvolatile memory. Owing to random …

Metalorganic chemical vapor deposition of TiN films for advanced metallization

GS Sandhu, SG Meikle, TT Doan - Applied physics letters, 1993 - pubs.aip.org
Titanium nitride (TiN) films are used extensively in advanced metallization schemes for
ultralarge scale integrated applications. In the present experiments, physical properties of thin …

Integration of silicon photonics in bulk CMOS

R Meade, JS Orcutt, K Mehta… - 2014 Symposium on …, 2014 - ieeexplore.ieee.org
The first monolithic process flow integrating silicon photonics on operational bulk CMOS has
been developed. Features include deep-trench isolation, polysilicon waveguides, grating …

Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

SC Pandey, R Meade, GS Sandhu - Journal of Applied Physics, 2015 - pubs.aip.org
We present numerical results from atomistic simulations of Cu in SiO 2 and Al 2 O 3, with an
emphasis on the thermodynamic, kinetic, and electronic properties. The calculated …