Nucleic acid memory
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Scaling limits of resistive memories
VV Zhirnov, R Meade, RK Cavin, G Sandhu - Nanotechnology, 2011 - iopscience.iop.org
This paper is intended to provide an expository, physics-based, framework for the estimation
of the performance potential and physical scaling limits of resistive memory. The approach …
of the performance potential and physical scaling limits of resistive memory. The approach …
A monolithically-integrated chip-to-chip optical link in bulk CMOS
Silicon-photonics is an emerging technology that can overcome the tradeoffs faced by
traditional electrical I/O. Due to ballooning development costs for advanced CMOS nodes, …
traditional electrical I/O. Due to ballooning development costs for advanced CMOS nodes, …
Modeling of breakdown-limited endurance in spin-transfer torque magnetic memory under pulsed cycling regime
Perpendicular spin-transfer torque (p-STT) magnetic memory is gaining increasing interest
as a candidate for storage-class memory, embedded memory, and possible replacement of …
as a candidate for storage-class memory, embedded memory, and possible replacement of …
Random number generation by differential read of stochastic switching in spin-transfer torque memory
The true random number generator (TRNG) is a key enabling technology for cryptography
and hardware authentication, which are becoming essential features in the era of the Internet …
and hardware authentication, which are becoming essential features in the era of the Internet …
A physics-based compact model of stochastic switching in spin-transfer torque magnetic memory
Spin-transfer torque random-access memory (STT-RAM) is gaining momentum as a
promising technology for high-density and embedded nonvolatile memory. Owing to random …
promising technology for high-density and embedded nonvolatile memory. Owing to random …
Metalorganic chemical vapor deposition of TiN films for advanced metallization
GS Sandhu, SG Meikle, TT Doan - Applied physics letters, 1993 - pubs.aip.org
Titanium nitride (TiN) films are used extensively in advanced metallization schemes for
ultralarge scale integrated applications. In the present experiments, physical properties of thin …
ultralarge scale integrated applications. In the present experiments, physical properties of thin …
Integration of silicon photonics in bulk CMOS
The first monolithic process flow integrating silicon photonics on operational bulk CMOS has
been developed. Features include deep-trench isolation, polysilicon waveguides, grating …
been developed. Features include deep-trench isolation, polysilicon waveguides, grating …
Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories
We present numerical results from atomistic simulations of Cu in SiO 2 and Al 2 O 3, with an
emphasis on the thermodynamic, kinetic, and electronic properties. The calculated …
emphasis on the thermodynamic, kinetic, and electronic properties. The calculated …