Xu et al., 2021 - Google Patents

Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2

Xu et al., 2021

Document ID
9847733420671424065
Author
Xu W
Lemaire P
Sharma K
Gasvoda R
Hausmann D
Agarwal S
Publication year
Publication venue
Journal of Vacuum Science & Technology A

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The mechanism for growth initiation on the nongrowth surface during area-selective atomic layer deposition (ALD) processes is not well understood. In this study, we examine the ALD of ZrO 2 on a SiO 2 surface functionalized with alkylated-aminosilane inhibitors delivered …
Continue reading at pubs.aip.org (other versions)

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