Choi et al., 2003 - Google Patents

Densification of∼ 5 nm-thick SiO2 layers by nitric acid

Choi et al., 2003

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Document ID
8985308844035288111
Author
Choi J
Joo S
Park T
Publication year
Publication venue
Chemical Vapor Deposition

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Low-temperature nitric acid (HNO3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of~ 5 nm-thick SiO2/Si layers produced by plasma- enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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