Mouchot et al., 1993 - Google Patents

Magnetoresistive sensors based on Ni/sub 81/Fe/sub 19//Ag multilayers

Mouchot et al., 1993

Document ID
8217767606036589728
Author
Mouchot J
Gerard P
Rodmacq B
Publication year
Publication venue
IEEE transactions on magnetics

External Links

Snippet

Because of their good magnetoresistive properties and thermal stability, sputtered NiFe/Ag multilayers (MLs) produce sensors with attractive characteristics. Thermal treatments up to 280 degrees C are carried out. They lead to improved sensitivity; the magnetoresistance …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/10—Plotting field distribution; Measuring field distribution
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/035—Measuring direction or magnitude of magnetic fields or magnetic flux using superconductive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00 and G01R33/00 - G01R35/00

Similar Documents

Publication Publication Date Title
US7355822B2 (en) Superparamagnetic field sensing device
US6496338B2 (en) Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
JP3949745B2 (en) Magnetic sensor and manufacturing process thereof
US6232777B1 (en) Tunneling magnetoresistive element and magnetic sensor using the same
US6226160B1 (en) Small area magnetic tunnel junction devices with low resistance and high magnetoresistance
CN112082579B (en) Wide-range tunnel magneto-resistance sensor and Wheatstone half-bridge
WO2000041250A1 (en) Spin dependent tunneling sensor
US4476454A (en) New magnetoresistive materials
US6256222B1 (en) Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
Mouchot et al. Magnetoresistive sensors based on Ni/sub 81/Fe/sub 19//Ag multilayers
US5691864A (en) Magnetoresistive head
KR100321956B1 (en) Magnetoresistance effect film and method for making the same
JP3344712B2 (en) Pinning layer for magnetic devices
JPH10500258A (en) Magnetoresistive sensor
Daughton Weakly coupled GMR sandwiches
Gorter et al. Magnetoresistive reading of information
Vas’ kovskii et al. Magnetoresistive Fe19Ni81/Tb-Co medium with an internal magnetic bias
Cross et al. Size and self-field effects in giant magnetoresistive thin-film devices
Lenssen et al. Giant magnetoresistance and its application in recording heads
Mao et al. Spin tunneling heads above 20 Gb/in/sup 2
JP3378549B2 (en) Magnetic head
Mattheis et al. Giant magnetoresistance-stack optimization for current sensor application with low hysteresis and a temperature-independent sensitivity at low current
JP3873375B2 (en) Ferromagnetic metal compound film
Kools et al. Fabrication and characterization of giant magnetoresistive elements with an integrated test coil
Uehara et al. AMR effect in spin-valve structure