Toet et al., 2000 - Google Patents

Uniform, High Performance Poly-Si TFTs Fabricated by Laser-Crystallization of PECVD-Grown a-SI: H

Toet et al., 2000

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Document ID
7674144101173127933
Author
Toet D
Sigmon A
Takehara A
Tsai B
Harshbarger W
Publication year
Publication venue
MRS Online Proceedings Library

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Polycrystalline silicon thin film transistors (TFTs) were fabricated using laser crystallization of thin amorphous Si films grown by plasma-enhanced chemical vapor deposition. The films were exposed to a scanned XeCl excimer laser beam at 350 mJ/cm 2. At this fluence the Si …
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