Wan et al., 2010 - Google Patents

SOI TFETs: Suppression of ambipolar leakage and low-frequency noise behavior

Wan et al., 2010

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Document ID
7495592039013365278
Author
Wan J
Le Royer C
Zaslavsky A
Cristoloveanu S
Publication year
Publication venue
2010 Proceedings of the European Solid State Device Research Conference

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We report on the thin-body tunneling field-effect transistors (TFETs) built on SOI substrates with both SiO 2 and HfO 2 gate dielectrics. The source-drain leakage current is suppressed by the introduction of intrinsic regions adjacent to the drain side, reducing the electric field at …
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