Hoye et al., 2015 - Google Patents

Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition

Hoye et al., 2015

View PDF
Document ID
7025885939827383398
Author
Hoye R
Muñoz-Rojas D
Musselman K
Vaynzof Y
MacManus-Driscoll J
Publication year
Publication venue
ACS Applied Materials & Interfaces

External Links

Snippet

A close-proximity atmospheric pressure chemical vapor deposition (AP-CVD) reactor is developed for synthesizing high quality multicomponent metal oxides for electronics. This combines the advantages of a mechanically controllable substrate-manifold spacing and …
Continue reading at pstorage-acs-6854636.s3.amazonaws.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies

Similar Documents

Publication Publication Date Title
Hoye et al. Synthesis and modeling of uniform complex metal oxides by close-proximity atmospheric pressure chemical vapor deposition
Mattinen et al. Atomic layer deposition of emerging 2D semiconductors, HfS2 and ZrS2, for optoelectronics
Hao et al. Atomic layer deposition of stable 2D materials
Mane et al. Indium oxide thin films by atomic layer deposition using trimethylindium and ozone
Park et al. Exceptionally uniform and scalable multilayer MoS2 phototransistor array based on large-scale MoS2 grown by RF sputtering, electron beam irradiation, and sulfurization
Wang et al. Selective direct growth of atomic layered HfS2 on hexagonal boron nitride for high performance photodetectors
Burbano et al. Sources of conductivity and doping limits in CdO from hybrid density functional theory
Pauporté et al. Low-temperature preparation of Ag-doped ZnO nanowire arrays, DFT study, and application to light-emitting diode
Illiberi et al. Spatial atmospheric atomic layer deposition of In x Ga y Zn z O for thin film transistors
Annadi et al. Hole transport modulations in low dimensional γ-CuI films: Implication for high figure of merit and thin film transistors
Bakke et al. Atomic layer deposition of CdS films
Krausmann et al. Charge transport in low-temperature processed thin-film transistors based on indium oxide/zinc oxide heterostructures
Cao et al. Design principles of p-type transparent conductive materials
Ilhom et al. Low-temperature as-grown crystalline β-Ga2O3 films via plasma-enhanced atomic layer deposition
Müller et al. Chemical vapor deposition growth of zinc oxide on sapphire with methane: initial crystal formation process
Lee et al. van der Waals epitaxy of high-mobility polymorphic structure of Mo6Te6 nanoplates/MoTe2 atomic layers with low Schottky barrier height
Kang et al. Effect of atomic layer deposition temperature on the growth orientation, morphology, and electrical, optical, and band-structural properties of ZnO and fluorine-doped ZnO thin films
Banerjee et al. Thermal atomic layer deposition of polycrystalline gallium nitride
Pintor-Monroy et al. Controlling carrier type and concentration in NiO films to enable in situ PN homojunctions
Balasubramanyam et al. Probing the origin and suppression of vertically oriented nanostructures of 2D WS2 layers
Lin et al. Well-Aligned Ternary Cd1-x Zn x S Nanowire Arrays and Their Composition-Dependent Field Emission Properties
Sibu et al. Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
Sanches de Lima et al. Experimental and theoretical insights into the structural disorder and gas sensing properties of ZnO
Yang et al. Growth mechanisms and morphology engineering of atomic layer-deposited WS2
Ma et al. Composition and properties control growth of high-quality GaO x N y film by one-step plasma-enhanced atomic layer deposition