Kind et al., 2002 - Google Patents

Nanowire ultraviolet photodetectors and optical switches

Kind et al., 2002

View PDF
Document ID
4680703093665665139
Author
Kind H
Yan H
Messer B
Law M
Yang P
Publication year
Publication venue
Advanced materials

External Links

Snippet

Highly sensitive nanowire switches have been created using ZnO nanowires. The light‐ induced conductivity increase, which is extremely sensitive to ultraviolet light, allows the reversibly switching of the nanowires between the “OFF” and “ON” states by an optical …
Continue reading at nanowires.berkeley.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0046Fullerenes, e.g. C60, C70
    • H01L51/0047Fullerenes, e.g. C60, C70 comprising substituents, e.g. PCBM
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048Carbon nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/549Material technologies organic PV cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H01L51/4253Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture comprising bulk hetero-junctions, e.g. interpenetrating networks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details

Similar Documents

Publication Publication Date Title
Kind et al. Nanowire ultraviolet photodetectors and optical switches
US7239769B2 (en) Nanowire optoelectric switching device and method
Tavakoli et al. Surface engineering of TiO2 ETL for highly efficient and hysteresis‐less planar perovskite solar cell (21.4%) with enhanced open‐circuit voltage and stability
Zeng et al. Multilayered PdSe2/perovskite Schottky junction for fast, self‐powered, polarization‐sensitive, broadband photodetectors, and image sensor application
Cai et al. Self‐Powered n‐SnO2/p‐CuZnS Core–Shell Microwire UV Photodetector with Optimized Performance
Szendrei et al. Solution-processable near-IR photodetectors based on electron transfer from PbS nanocrystals to fullerene derivatives
Wang et al. High‐performance organic‐inorganic hybrid photodetectors based on P3HT: CdSe nanowire heterojunctions on rigid and flexible substrates
Rostalski et al. Monochromatic versus solar efficiencies of organic solar cells
Huang et al. Ultraviolet photoconductance of a single hexagonal WO 3 nanowire
Liu et al. Room temperature broadband infrared carbon nanotube photodetector with high detectivity and stability
Liu et al. New UV‐A photodetector based on individual potassium niobate nanowires with high performance
Li et al. Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire
Spina et al. Ultrasensitive 1D field-effect phototransistors: CH 3 NH 3 PbI 3 nanowire sensitized individual carbon nanotubes
Lu et al. Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO 2 nanowires
Liu et al. Tunable hybrid photodetectors with superhigh responsivity
Riedel et al. Polymer solar cells with novel fullerene-based acceptor
Kim et al. Defect Restoration of Low‐Temperature Sol‐Gel‐Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes
Bai et al. A broadband photodetector based on Rhodamine B-sensitized ZnO nanowires film
Chen et al. Ag2S/ZnO core-shell nanoheterojunction for a self-powered solid-state photodetector with wide spectral response
Fu et al. Improvement of ultraviolet photoresponse of bent ZnO microwires by coupling piezoelectric and surface oxygen adsorption/desorption effects
Pang et al. Coplanar asymmetrical reduced graphene oxide–titanium electrodes for polymer photodetectors
Wangyang et al. Solution‐Processable methyl ammonium lead iodide single crystal photodetectors for visible light and X‐ray
Kurt et al. Optical and electrical characterization of a ZnO/coronene-based hybrid heterojunction photodiode
Unal et al. Synthesis and optoelectronic characterization of coronene/CdO self-powered photodiode
Das et al. Fabrication of single Si nanowire metal–semiconductor–metal device for photodetection