Wheeldon et al., 2010 - Google Patents

GaAs, AlGaAs and InGaP tunnel junctions for multi‐junction solar cells under concentration: resistance study

Wheeldon et al., 2010

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Document ID
4122958910275620555
Author
Wheeldon J
Valdivia C
Walker A
Kolhatkar G
Masson D
Riel B
Fafard S
Jaouad A
Turala A
Arès R
Aimez V
Hall T
Hinzer K
Publication year
Publication venue
AIP Conference Proceedings

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The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of< 10− 4 ω⋅ cm 2 and a peak tunneling current suitable for MJ solar cells up to …
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