Kang et al., 2010 - Google Patents
Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputteringKang et al., 2010
View PDF- Document ID
- 3096496858351983152
- Author
- Kang Y
- Kwon S
- Choi J
- Cho Y
- Song P
- Publication year
- Publication venue
- Thin Solid Films
External Links
Snippet
Ce-doped indium tin oxide (ITO: Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO2 contents (CeO2: 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200° C. The crystallinity of …
- 238000001755 magnetron sputter deposition 0 title abstract description 6
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ahn et al. | Characteristics of ITO-resistive touch film deposited on a PET substrate by in-line DC magnetron sputtering | |
Utsumi et al. | Low resistivity ITO film prepared using the ultra high density ITO target | |
Assuncao et al. | Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature | |
El Hajj et al. | Optimization of ZnO/Ag/ZnO multilayer electrodes obtained by Ion Beam Sputtering for optoelectronic devices | |
Kim et al. | Preparation of high quality ITO films on a plastic substrate using RF magnetron sputtering | |
Ding et al. | Transparent conductive ITO/Cu/ITO films prepared on flexible substrates at room temperature | |
Hanada et al. | Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays | |
Kim et al. | Crystallization and electrical properties of ITO: Ce thin films for flat panel display applications | |
Lee et al. | Study on In–Zn–Sn–O and In–Sn–Zn–O films deposited on PET substrate by magnetron co-sputtering system | |
Canhola et al. | Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering | |
Xu et al. | Effect of growth temperature and coating cycles on structural, electrical, optical properties and stability of ITO films deposited by magnetron sputtering | |
Kim et al. | AFM observation of ITO thin films deposited on polycarbonate substrates by sputter type negative metal ion source | |
Park et al. | Influence of nickel thickness on the properties of ITO/Ni/ITO thin films | |
Kim et al. | Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films | |
Goncalves et al. | Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering | |
Lee et al. | Dependence of intermediated noble metals on the optical and electrical properties of ITO/metal/ITO multilayers | |
Lippens et al. | Indium–tin-oxide coatings for applications in photovoltaics and displays deposited using rotary ceramic targets: Recent insights regarding process stability and doping level | |
Gong et al. | Effect of post-deposition annealing on the structural, optical and electrical properties of ZTO/Ag/ZTO tri-layered films | |
Zhou et al. | Effects of sputtering power on the properties of Al-doped ZnO films deposited on amorphous silicon films substrate | |
Lee et al. | Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates | |
Yu et al. | The effect of ITO films thickness on the properties of flexible organic light emitting diode | |
Kang et al. | Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering | |
Huang et al. | Influence of discharge power and annealing temperature on the properties of indium tin oxide thin films prepared by pulsed-DC magnetron sputtering | |
Xia et al. | Microstructure, opotoelectrical and pre-strain dependent electrical properties of AZO films on flexible glass substrates for flexible electronics | |
Jung et al. | Mechanical and structural properties of high temperature a-ITO: Sm films deposited on polyimide substrate by DC magnetron sputtering |