Shepherd, 1968 - Google Patents

Doping of epitaxial silicon films

Shepherd, 1968

Document ID
2878577215737472848
Author
Shepherd W
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

The doping of epitaxial silicon layers deposited by the hydrogen reduction of SIC14 has been studied. The dopants used were phosphorus, arsenic, and antimony introduced as the trichlorides. In each case for fixed dopant to silicon ratios in the gas phase the film resistivity …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements

Similar Documents

Publication Publication Date Title
Tietjen et al. The preparation and properties of vapor‐deposited epitaxial GaAs1− x P x using arsine and phosphine
Shepherd Doping of epitaxial silicon films
Hurle A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide
Newman The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
Hong et al. Self-diffusion in alpha and beta silicon carbide
Parkes et al. The fabrication of p and n type single crystals of CuInSe2
Wieder Intermetallic Semiconducting Films: International Series of Monographs in Semiconductors
Nishizawa et al. Properties of Sn‐doped GaAs
Benchimol et al. Chemical beam epitaxy of indium phosphide
CN107532326A (en) Crystal laminate structure
Black et al. Electrical Measurements and X‐Ray Lattice Parameter Measurements of GaAs Doped with Se, Te, Zn, and Cd and the Stress Effects of These Elements as Diffusants in GaAs
Holmes et al. Contour maps of EL2 deep level in liquid‐encapsulated Czochralski GaAs
KR100720366B1 (en) ENHANCED n-TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
Montgomery et al. Hall‐Effect Measurements of n‐Type Gallium Phosphide
Kim et al. Kinetic modeling of grain growth in polycrystalline silicon films doped with phosphorus or boron
US3348984A (en) Method of growing doped crystalline layers of semiconductor material upon crystalline semiconductor bodies
Moest et al. Preparation of epitaxial GaAs and GaP films by vapor phase reaction
Laugier et al. Ternary phase diagram and liquid phase epitaxy of Pb-Sn-Se and Pb-Sn-Te
US4279670A (en) Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
Capper et al. Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe
Nakayama et al. Kinetics of Thermal Growth of Silicon Dioxide Films in Water Vapor‐Oxygen‐Argon Mixtures
US3206406A (en) Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals
Fyhn et al. Relaxation of strained, epitaxial Si 1− x Sn x
Kalinnikov et al. Physical chemistry of the magnetic semiconductor CdCr 2 Se 4
DE69006823T2 (en) Boron source for molecular beam epitaxy.