De Valicourt et al., 2017 - Google Patents

Integrated ultra-wide band wavelength-tunable hybrid external cavity silicon-based laser

De Valicourt et al., 2017

Document ID
2047565429288562308
Author
De Valicourt G
Verdier A
Brenot R
Chen Y
Dong P
Publication year
Publication venue
2017 Optical Fiber Communications Conference and Exhibition (OFC)

External Links

Snippet

Integrated ultra-wide band wavelength-tunable hybrid external cavity silicon-based laser Page 1 Th5C.6.pdf OFC 2017 © OSA 2017 Integrated ultrawide band wavelengthtunable hybrid external cavity siliconbased laser G. de Valicourt(1), A. Verdier(2), R. Brenot(2), YKChen(1), and …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/05—Construction or shape of optical resonators; Accomodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
    • H01S5/125—Distributed Bragg reflector lasers (DBR-lasers)
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/30—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves using scattering effects, e.g. stimulated Brillouin or Raman effects
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S2301/00—Functional characteristics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/10—Light guides of the optical waveguide type
    • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters

Similar Documents

Publication Publication Date Title
Verdier et al. Ultrawideband wavelength-tunable hybrid external-cavity lasers
JP5059601B2 (en) Coolerless integrated circuit and floating wavelength grid photonic integrated circuit (PIC) for WDM transmission networks
US6433921B1 (en) Multiwavelength pumps for raman amplifier systems
CN111434058B (en) Narrow linewidth multi-wavelength light source
Duan et al. New advances on heterogeneous integration of III–V on silicon
Paul et al. 10-Gb/s direct modulation of widely tunable 1550-nm MEMS VCSEL
Guo et al. Thermally tuned high-performance III-V/Si 3 N 4 external cavity laser
de Valicourt et al. Hybrid-integrated wavelength and reflectivity tunable III–V/silicon transmitter
De Valicourt et al. Integrated ultra-wide band wavelength-tunable hybrid external cavity silicon-based laser
US7228030B2 (en) Method and apparatus providing an output coupler for an optical beam
WO2017131879A1 (en) Silicon-photonic tunable laser
Kobayashi et al. Design and fabrication of wide wavelength range 25.8-Gb/s, 1.3-μm, push-pull-driven DMLs
JP2017175009A (en) External resonator type laser light source
Klein et al. Hybrid InP-Polymer 30 nm tunable DBR Laser for 10 Gbit/s direct Modulation in the C-Band
de Valicourt et al. Dual hybrid silicon-photonic laser with fast wavelength tuning
Yoffe et al. Efficient compact tunable laser for access networks using silicon ring resonators
JP6083644B2 (en) Integrated semiconductor light source
Gao et al. High-performance hybrid-integrated silicon photonic tunable laser
EP4018238B1 (en) Photonic device
de Valicourt et al. Hybrid silicon-based tunable laser with integrated reflectivity-tunable mirror
Jain et al. Directly modulated photonic integrated multi-section laser for next generation TWDM access networks
de Valicourt et al. Integrated 5-channel WDM hybrid III-V/Si transmitter enabling 100Gb/s and beyond
Grillanda et al. 16 wavelengths comb source using large-scale hybrid photonic integration
de Valicourt et al. Hybrid III-V/Silicon integration: Enabling the next generation of advanced photonic transmitters
Matsumoto et al. Demonstration of 1-µm-band Si-Photonics-Based Quantum Dot Heterogeneous Tunable Laser