Du et al., 2012 - Google Patents

One-step synthesis of stoichiometric Cu2ZnSnSe4 as counter electrode for dye-sensitized solar cells

Du et al., 2012

Document ID
18002901777437312971
Author
Du Y
Fan J
Zhou W
Zhou Z
Jiao J
Wu S
Publication year
Publication venue
ACS applied materials & interfaces

External Links

Snippet

Cu2ZnSnSe4 (CZTSe) nanoparticles with diameters of 200–300 nm were synthesized by one-step solvothermal method without surfactants or templates. The structure, composition and morphology of CZTSe nanoparticles were characterized by XRD, XPS, Raman …
Continue reading at pubs.acs.org (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage
    • Y02E60/13—Ultracapacitors, supercapacitors, double-layer capacitors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods

Similar Documents

Publication Publication Date Title
Du et al. One-step synthesis of stoichiometric Cu2ZnSnSe4 as counter electrode for dye-sensitized solar cells
Huang et al. AgBiS2 semiconductor-sensitized solar cells
Cheng et al. Formation of branched ZnO nanowires from solvothermal method and dye-sensitized solar cells applications
Mali et al. Low-cost electrospun highly crystalline kesterite Cu2ZnSnS4 nanofiber counter electrodes for efficient dye-sensitized solar cells
Natu et al. Valence band-edge engineering of nickel oxide nanoparticles via cobalt doping for application in p-type dye-sensitized solar cells
Cao et al. Highly Electrocatalytic Cu2ZnSn (S1–x Se x) 4 Counter Electrodes for Quantum-Dot-Sensitized Solar Cells
Choi et al. Metal selenides as a new class of electrocatalysts for quantum dot-sensitized solar cells: a tale of Cu1. 8Se and PbSe
Li et al. Controlled growth of CuS on electrospun carbon nanofibers as an efficient counter electrode for quantum dot-sensitized solar cells
Sakai et al. Efficiency enhancement of ZnO-based dye-sensitized solar cells by low-temperature TiCl4 treatment and dye optimization
Radich et al. Cu2S reduced graphene oxide composite for high-efficiency quantum dot solar cells. Overcoming the redox limitations of S2–/S n 2–at the counter electrode
Raj et al. Banyan root structured Mg-doped ZnO photoanode dye-sensitized solar cells
Wang et al. One-step electrochemical deposition of hierarchical CuS nanostructures on conductive substrates as robust, high-performance counter electrodes for quantum-dot-sensitized solar cells
Duan et al. Sn-doped TiO2 photoanode for dye-sensitized solar cells
Lana-Villarreal et al. Nanostructured zinc stannate as semiconductor working electrodes for dye-sensitized solar cells
Oekermann et al. Electron transport and back reaction in nanocrystalline TiO2 films prepared by hydrothermal crystallization
Wu et al. Glucose aided preparation of tungsten sulfide/multi-wall carbon nanotube hybrid and use as counter electrode in dye-sensitized solar cells
Zhu et al. One-step synthesis of CdS sensitized TiO2 photoanodes for quantum dot-sensitized solar cells by microwave assisted chemical bath deposition method
Hsiao et al. Electron transport patterns in TiO2 nanocrystalline films of dye-sensitized solar cells
Hu et al. Selective synthesis of FeS and FeS2 nanosheet films on iron substrates as novel photocathodes for tandem dye-sensitized solar cells
Xu et al. Rapid microwave-assisted synthesis of SnO2 quantum dots for efficient planar perovskite solar cells
Zhang et al. CuInS2 nanocrystals/PEDOT: PSS composite counter electrode for dye-sensitized solar cells
Liu et al. Chemical conversion synthesis of ZnS shell on ZnO nanowire arrays: morphology evolution and its effect on dye-sensitized solar cell
Luo et al. F-doping-enhanced carrier transport in the SnO2/perovskite interface for high-performance perovskite solar cells
Murakami et al. Adjustment of conduction band edge of compact TiO2 layer in perovskite solar cells through TiCl4 treatment
Chen et al. Effect of Crystallization of Cu2ZnSnS x Se4–x Counter Electrode on the Performance for Efficient Dye-Sensitized Solar Cells