Gouldey, 2010 - Google Patents

The Effect of Growth Method on GaN Films and Their Interfaces with CdTe and CdS

Gouldey, 2010

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17872806838163205217
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Gouldey D
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This work has analyzed the complex interfaces of GaN and InGaN grown by sputter deposition and GaN grown by metal-organic chemical vapor deposition (MOCVD) with CdTe and CdS. First, the GaN and InGaN films were characterized by AFM and XRD, and it has …
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