Hussain et al., 2023 - Google Patents

Effect of Magnetron Configuration on Plasma Parameters in Sputtering Technique

Hussain et al., 2023

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Document ID
17692980051720185727
Author
Hussain M
Ghafoori A
Habeeb O
Publication year
Publication venue
probe

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In this work, a closed-field unbalanced dual magnetron assembly was designed, constructed and characterized. This assembly can be successfully used in plasma sputtering system to improve the electrical characteristics of the plasma. This improvement was shown by the …
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/34Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
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    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
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    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452Magnet distribution
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
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    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325Electric arc evaporation
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    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering

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