Hussain et al., 2023 - Google Patents
Effect of Magnetron Configuration on Plasma Parameters in Sputtering TechniqueHussain et al., 2023
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- 17692980051720185727
- Author
- Hussain M
- Ghafoori A
- Habeeb O
- Publication year
- Publication venue
- probe
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In this work, a closed-field unbalanced dual magnetron assembly was designed, constructed and characterized. This assembly can be successfully used in plasma sputtering system to improve the electrical characteristics of the plasma. This improvement was shown by the …
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- H01J37/32—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
- H01J37/34—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H01J37/34—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- H01J37/34—Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3435—Applying energy to the substrate during sputtering
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- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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