Howell et al., 2000 - Google Patents

Poly-Si thin-film transistors on steel substrates

Howell et al., 2000

Document ID
16552023890337997480
Author
Howell R
Stewart M
Kamik S
Saha S
Hatalis M
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

We report the successful fabrication of poly-Si thin-film transistors (TFTs) on stainless steel substrates. The TFTs were fabricated on a 500 μm thick polished stainless steel substrate using furnace crystallized amorphous Si deposited by PECVD. These devices typically have …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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