Chatterjee et al., 2018 - Google Patents
Tin (IV) substitution in (CH3NH3) 3Sb2I9: toward low-band-gap defect-ordered hybrid perovskite solar cellsChatterjee et al., 2018
- Document ID
- 16201130387594876011
- Author
- Chatterjee S
- Pal A
- Publication year
- Publication venue
- ACS applied materials & interfaces
External Links
Snippet
The prevailing issue of wide optical gap in defect-ordered hybrid iodide perovskites has been addressed in this effort by heterovalent substitution at the metal site. With the introduction of Sn4+ in the (CH3NH3) 3Sb2I9 structure, we have successfully lowered the …
- 238000006467 substitution reaction 0 title abstract description 42
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/542—Dye sensitized solar cells
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
- H01L51/0077—Coordination compounds, e.g. porphyrin
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nano-rods
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
- H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Chatterjee et al. | Tin (IV) substitution in (CH3NH3) 3Sb2I9: toward low-band-gap defect-ordered hybrid perovskite solar cells | |
Ye et al. | Ambient-air-stable lead-free CsSnI3 solar cells with greater than 7.5% efficiency | |
Prochowicz et al. | Engineering of perovskite materials based on formamidinium and cesium hybridization for high-efficiency solar cells | |
Kayesh et al. | Coadditive engineering with 5-ammonium valeric acid iodide for efficient and stable Sn perovskite solar cells | |
Li et al. | (C6H5CH2NH3) 2CuBr4: a lead-free, highly stable two-dimensional perovskite for solar cell applications | |
Zhen et al. | Strategies for modifying TiO2 based electron transport layers to boost perovskite solar cells | |
Zhu et al. | Recent advancements and challenges for low-toxicity perovskite materials | |
Liu et al. | Solvent engineering improves efficiency of lead-free tin-based hybrid perovskite solar cells beyond 9% | |
Ju et al. | Tunable Band Gap and Long Carrier Recombination Lifetime of Stable Mixed CH3NH3Pb x Sn1–x Br3 Single Crystals | |
Chen et al. | Ag-incorporated organic–inorganic perovskite films and planar heterojunction solar cells | |
Cao et al. | Thin films and solar cells based on semiconducting two-dimensional ruddlesden–popper (CH3 (CH2) 3NH3) 2 (CH3NH3) n− 1Sn n I3 n+ 1 perovskites | |
Hamdeh et al. | Solution-processed BiI3 thin films for photovoltaic applications: improved carrier collection via solvent annealing | |
Wu et al. | Incorporating 4-tert-butylpyridine in an antisolvent: a facile approach to obtain highly efficient and stable perovskite solar cells | |
Zhang et al. | Triiodide-induced band-edge reconstruction of a lead-free perovskite-derivative hybrid for strong light absorption | |
Lee et al. | Evaluating the optoelectronic quality of hybrid perovskites by conductive atomic force microscopy with noise spectroscopy | |
K Al-Mousoi et al. | Comparative study of the correlation between diffusion length of charge carriers and the performance of CsSnGeI3 perovskite solar cells | |
Maiti et al. | Sulfur-vacancy passivation in solution-processed Sb2S3 thin films: influence on photovoltaic interfaces | |
Ueoka et al. | Effects of co-addition of sodium chloride and copper (II) bromide to mixed-cation mixed-halide perovskite photovoltaic devices | |
Wang et al. | Electronic structure and optical properties of vacancy-ordered double perovskites Cs2Pd Br x Cl6–x by first-principles calculation | |
Pellegrino et al. | Texture of MAPbI3 layers assisted by chloride on flat TiO2 substrates | |
Xian et al. | Engineered Electronic Structure and Carrier Dynamics in Emerging Cs2Ag x Na1–x FeCl6 Perovskite Single Crystals | |
van Embden et al. | Ultrathin solar absorber layers of silver bismuth sulfide from molecular precursors | |
Wang et al. | Metal halide semiconductors beyond lead-based perovskites for promising optoelectronic applications | |
Liu et al. | Acetate anion assisted crystal orientation reconstruction in organic–inorganic lead halide perovskite | |
Shao et al. | Enhanced photovoltaic performance and thermal stability of CH3NH3PbI3 perovskite through lattice symmetrization |