Eyer et al., 1987 - Google Patents

Silicon sheets grown from powder layers by a zone melting process

Eyer et al., 1987

Document ID
16127206407899126798
Author
Eyer A
Schillinger N
Schelb S
Räuber A
Grabmaier J
Publication year
Publication venue
Journal of Crystal Growth

External Links

Snippet

The growth of silicon sheets from fine-grained powder by a zone melting process is reported. Incoherent focussed light is used as the heat source. Polycrystalline sheets of 100 mm× 50 mm and a thickness of about 700 μm are grown. Recent modifications of the melting process …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Similar Documents

Publication Publication Date Title
US4027053A (en) Method of producing polycrystalline silicon ribbon
US4382838A (en) Novel silicon crystals and process for their preparation
US4059461A (en) Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4090851A (en) Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets
CA1193521A (en) Methods and apparatus for melt growth of crystalline semiconductor sheets
Geis et al. Zone‐melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography
US4099924A (en) Apparatus improvements for growing single crystalline silicon sheets
JP2001516324A (en) Columnar crystalline granular polycrystalline solar cell substrate and improved manufacturing method
Stultz et al. Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates
US4873063A (en) Apparatus for zone regrowth of crystal ribbons
CA1081586A (en) Method and apparatus for forming silicon crystalline bodies
JPS6466929A (en) Method of forming defect-free single crystal thin layer of semiconductor material
Wallace et al. Thin silicon string ribbon
US4135027A (en) Semiconductor element embodying an optical coating to enhance thermal gradient zone melting processing thereof
Eyer et al. Silicon sheets grown from powder layers by a zone melting process
Celler et al. Seeded recrystallization of thick polysilicon films on oxidized 3‐in. wafers
JPS5946090B2 (en) Processing method for semiconductor wafers
US4332838A (en) Particulate thin film fabrication process
US4775443A (en) Method and apparatus for zone regrowth of crystal ribbons from bulk material
US4035199A (en) Process for thermal gradient zone melting utilizing a guard ring radiation coating
US4120743A (en) Crossed grain growth
US3413098A (en) Process for varying the width of sheets of web material
JP2022159501A (en) Polycrystalline silicon bar, polycrystalline silicon rod and production method of the same
JPS6261771A (en) Melting and directional solidifying method of metal
US4498926A (en) Method for producing eutectics as thin films using a laser device as a heat source