Lee et al., 1999 - Google Patents
Gigantic Crystal Grain by Excimer Laser with a Pulse Duration of 200 ns and Its Application to TFTLee et al., 1999
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- 15787882651083550013
- Author
- Lee K
- Hwang J
- Jung C
- Ihn T
- Yi S
- Jeon H
- Lee W
- Choi D
- Jang J
- Zahorski D
- Lee C
- Publication year
- Publication venue
- JOURNAL-KOREAN PHYSICAL SOCIETY
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Snippet
The large grain growth by excimer laser annealing was observed at multi-shots with a long laser pulse duration of 200 ns. The grain size of the polycrystalline Si increases up to~ 1.5/im with 20 shots at a laser energy density of 650 mJ/cm2, and (111) orientation is …
- 229910021420 polycrystalline silicon 0 abstract description 31
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