Pierantoni et al., 2013 - Google Patents

Analysis of a microwave graphene-based patch antenna

Pierantoni et al., 2013

Document ID
15251101202676516670
Author
Pierantoni L
Dragoman M
Mencarelli D
Publication year
Publication venue
2013 European Microwave Conference

External Links

Snippet

The possibility of using graphene-based antennas is a core point in the development of high speed, multifunctional devices, leading to a new generation of smart nano-systems for wireless applications. In this work, we present a first analysis of the electromagnetic …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q1/00—Details of, or arrangements associated with, aerials
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. supraconductor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/16—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole
    • H01Q9/26—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/16—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction, or polarisation of waves radiated from an aerial, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot aerials; Leaky-waveguide aerials; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot aerials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

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