Xia et al., 2023 - Google Patents

A 6–18 GHz Active Variable Attenuator With Minimized Phase Variation

Xia et al., 2023

Document ID
14791511815290035142
Author
Xia Z
Li Z
Chen B
Wang X
Publication year
Publication venue
2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS)

External Links

Snippet

This paper presents a 6–18 GHz 7-bit digitally controlled active variable attenuator with phase-invariant technique in 40-nm CMOS technology for wideband active phased-array applications. A current-steering structure is implemented in the attenuator for attenuation …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605Distributed amplifiers
    • H03F3/607Distributed amplifiers using FET's
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using semiconductor devices using field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06Receivers
    • H04B1/16Circuits
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03JTUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00Continuous tuning
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01QAERIALS
    • H01Q23/00Aerials with active circuits or circuit elements integrated within them or attached to them

Similar Documents

Publication Publication Date Title
Gharibdoust et al. A Fully Integrated 0.18-$\mu {\hbox {m}} $ CMOS Transceiver Chip for $ X $-Band Phased-Array Systems
Ku et al. 6-bit CMOS digital attenuators with low phase variations for $ X $-band phased-array systems
Wu et al. A 20~ 43 GHz VGA with 21.5 dB gain tuning range and low phase variation for 5G communications in 65-nm CMOS
Min et al. Single-ended and differential Ka-band BiCMOS phased array front-ends
Meghdadi et al. A 6-bit CMOS phase shifter for $ S $-band
Nawaz et al. A Ka/V band-switchable LNA with 2.8/3.4 dB noise figure
US6850753B2 (en) Tunable low noise amplifier and current-reused mixer for a low power RF application
CN106712725A (en) Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit
Zarei et al. Reflective-type phase shifters for multiple-antenna transceivers
CN206195723U (en) Ultra wide band high -gain low -noise amplifier based on monolithic microwave integrated circuit
Kim et al. A Switchless, $ Q $-Band Bidirectional Transceiver in 0.12-$\mu $ m SiGe BiCMOS Technology
Ghazizadeh et al. A 125-ps 8–18-GHz CMOS integrated delay circuit
US6630861B2 (en) Variable gain amplifier
US20020158710A1 (en) Broadband, four-bit, MMIC phase shifter
Zhu et al. A 10.56-GHz broadband transceiver with integrated T/R switching via matching network reuse and 0.3–2.1-GHz baseband in 28-nm CMOS technology
US6828873B2 (en) Integrated high frequency circuit for affecting the amplitude of signals
Ding et al. A fully integrated 27.5-30.5 GHz 8-element phased-array transmit front-end module in 65 nm CMOS
Xia et al. A 6–18 GHz Active Variable Attenuator With Minimized Phase Variation
Kim et al. Ultralow Noise Figure and Broadband CMOS LNA With Three-Winding Transformer and Large Transistor
Meng et al. An MSCL-Based Attenuator With Ultralow Insertion Loss and Intrinsic ESD-Protection for Millimeter-Wave and Terahertz Applications
Meghdadi et al. A reconfigurable highly-linear CMOS transceiver core chip for X-band phased arrays
CN115632645B (en) Radio frequency switch assembly, operational amplification module and radio frequency communication equipment
Li et al. A 23–44-GHz broadband CG-Gilbert gm-boosted PS-VGA for 5G application
JP2659573B2 (en) IC receiver
Shi et al. A compact ku-band 6-bit attenuator in 0.35 um SiGe BiCMOS technology