Witte et al., 2007 - Google Patents

Lamellar crystallization of silicon for 3-dimensional integration

Witte et al., 2007

Document ID
14646385928570287387
Author
Witte D
Crnogorac F
Pickard D
Mehta A
Liu Z
Rajendran B
Pianetta P
Pease R
Publication year
Publication venue
Microelectronic engineering

External Links

Snippet

In order to realize monolithic 3-dimensional integration of semiconductor devices, we must be able to obtain device-quality single-crystalline regions of semiconductor on an amorphous substrate. This must be done without exceeding the thermal budget of …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022—Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
    • H01L21/2026—Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials using a coherent energy beam, e.g. laser or electron beam
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Similar Documents

Publication Publication Date Title
JP3204986B2 (en) Crystallization of semiconductor film region on substrate and device manufactured by this method
US8114217B2 (en) Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
US6635932B2 (en) Thin film crystal growth by laser annealing
JP2004087535A (en) Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device
Köhler et al. Large-grained polycrystalline silicon on glass by copper vapor laser annealing
Mariucci et al. Lateral growth control in excimer laser crystallized polysilicon
Ishihara et al. Advanced excimer-laser crystallization process for single-crystalline thin film transistors
Park et al. Comprehensive analysis of blue diode laser-annealing of amorphous silicon films
Han et al. Ultrafast temporal-spatial dynamics of amorphous-to-crystalline phase transition in Ge2Sb2Te5 thin film triggered by multiple femtosecond laser pulses irradiation
JP2001274088A (en) Crystallization treatment of semiconductor film region on substrate and device being manufactured thereby
Witte et al. Lamellar crystallization of silicon for 3-dimensional integration
Jeon et al. Two-step laser recrystallization of poly-Si for effective control of grain boundaries
Choi et al. Study of phosphorus-doped Si annealed by a multi-wavelength laser
KR100611040B1 (en) Apparutus for thermal treatment using laser
US10629434B2 (en) Laser irradiation induced surface planarization of polycrystalline silicon films
Huang et al. Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films
KR100278128B1 (en) Method for manufacturing polycrystal semiconductor film
Son et al. Experimental and numerical study of Si annealed by laser sources of the visible spectrum (red and blue wavelength)
JPH09162121A (en) Fabrication of semiconductor device
Xu et al. High-performance thin-silicon-film transistors fabricated by double laser crystallization
Burtsev et al. Phase-field modelling of excimer laser lateral crystallization of silicon thin films
JP4328519B2 (en) Method for producing crystalline thin film
Voutsas Laser Crystallization of Silicon Thin Films for Flat Panel Display Applications
Dahlheimer et al. Conductive microcrystalline-Si films produced by laser processing
Andrä et al. Preparation of single crystalline regions in amorphous silicon layers on glass by Ar+ laser irradiation