Katamreddy et al., 2007 - Google Patents

Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal (diethylamino) precursors

Katamreddy et al., 2007

Document ID
13677283980500816771
Author
Katamreddy R
Inman R
Jursich G
Soulet A
Takoudis C
Publication year
Publication venue
Journal of Materials Research

External Links

Snippet

Tetrakis-diethylamino hafnium (TDEAH), tris-diethylamino aluminum (TDEAA), and ozone were used for the atomic layer deposition (ALD) of HfO2, Al2O3, and HfAlOx films. The ALD rates were measured to be 1.1 Å/cycle for HfO2 and 1.3 Å/cycle for Al2O3. The ALD …
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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