Henck, 1992 - Google Patents

In situ real‐time ellipsometry for film thickness measurement and control

Henck, 1992

Document ID
11268594584240076243
Author
Henck S
Publication year
Publication venue
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

External Links

Snippet

A rotating compensator type polarizer‐compensator‐sample‐analyzer ellipsometer is used in situ to provide real‐time thickness measurements and control of process end point during the etching of polysilicon. The ellipsometer can measure the thickness of the polysilicon …
Continue reading at pubs.aip.org (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical means
    • G01B11/02—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

Similar Documents

Publication Publication Date Title
Henck In situ real‐time ellipsometry for film thickness measurement and control
Duncan et al. Insitu spectral ellipsometry for real-time measurement and control
EP0653621B1 (en) A process for fabricating a device using an ellipsometric technique
US5955139A (en) Automatic film deposition control
US5835221A (en) Process for fabricating a device using polarized light to determine film thickness
CA1189767A (en) End-point detection in plasma etching of phosphosilicate glass
US5425839A (en) Method for rapidly etching material on a semiconductor device
Henck et al. In situ spectral ellipsometry for real‐time thickness measurement: Etching multilayer stacks
Kroesen et al. Nonintrusive wafer temperature measurement using in situ ellipsometry
US7787685B2 (en) Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials
Benson et al. Sensor systems for real‐time feedback control of reactive ion etching
Duncan et al. High‐speed spectral ellipsometry for in situ diagnostics and process control
Wang et al. Calibrations of phase modulation amplitude of photoelastic modulator
Henck In-process thin film thickness measurement and control
US6562254B2 (en) Etching method
Mykhaylyk et al. Comparative characterisation by atomic force microscopy and ellipsometry of soft and solid thin films
US7025501B2 (en) Tracking temperature change in birefringent materials
Henck et al. In-situ spectral ellipsometry for real-time thickness measurement and control
Kraszewski et al. Laser reflectance interferometry system with a 405 nm laser diode for in situ measurements of cvd diamond thickness
Henck In situ spectral ellipsometry for real-time thickness measurement and control Steven A. Henck, Walter M. Duncan*, J M. Loewenstein, and John Kuehne
Pickering Spectroscopic ellipsometry for monitoring and control of surfaces, thin layers and interfaces
Duncan et al. RAPID SCAN SPECTRAL ELLIPSOMETRY FOR IN SITU REAL-TIME WAFER STATE MONITORING
Hall et al. Ellipsometry as a real-time deposition monitor
Duncan et al. Real-time diagnostics of II–VI molecular beam epitaxy by spectral ellipsometry
Gibbons et al. Real-time spectroscopic ellipsometry as a characterization tool for oxide molecular beam epitaxy